Class 977/938 - Field Effect transistors (FETs) with nanowire- or nanotube-channel region

Subclass of Class 977 - Nanotechnology
Definition: Subject matter wherein the nanostructure such as a nanowire
No. of patents: 34
Last issue date: 10/21/2008

Number	Title	Issue Date
7439562	Process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I) wherein R1, R2 and R3 are chosen in...	10/21/2008
7436033	Tri-gated molecular field effect transistor and method of fabricating the same A tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region...	10/14/2008
7423285	Wire cross-point fet structure The difficulty of miniaturization of large-scale integrated circuits in electric devices based on the conventional techniques involving three-dimensional device structures or the introduction of novel materials is solved. Wires 2 and 3 are disposed to ...	09/09/2008
7411241	Vertical type nanotube semiconductor device A vertical type nanotube semiconductor device including a nanotube bit line, disposed on a substrate and in parallel with the substrate and composed of a nanotube with a conductive property, and a nanotube pole connected to the bit line vertically to the substrate a...	08/12/2008
7410853	Method of forming a nanowire and method of manufacturing a semiconductor device using the same In a method of forming a nanowire in a semiconductor device, a trench is formed by partially etching a bulk semiconductor substrate. An insulation layer pattern is formed on the substrate to fill up the trench. The insulation layer pattern covers a first region of t...	08/12/2008
7405129	Device comprising doped nano-component and method of forming the device A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative exa...	07/29/2008
7402506	Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film...	07/22/2008
7394118	Chemical sensor using semiconducting metal oxide nanowires Indium oxide nanowires are used for determining information about different chemicals or Biologics. Chemicals are absorbed to the surface of the nanowires, and cause the semiconducting characteristics of the Nanowires to change. These changed characteristics are sen...	07/01/2008
7390947	Forming field effect transistors from conductors A nanotube transistor, such as a carbon nanotube transistor, may be formed with a top gate electrode and a spaced source and drain. Conduction along the transistor from source to drain is controlled by the gate electrode. Underlying the gate electrode are at least t...	06/24/2008
7385231	Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element A method of producing a porous thin-film-deposition substrate, which has the steps of: placing onto a substrate that has an electrostatic charge on its surface, fine particles with a surface electrostatic charge opposite to the electrostatic charge of the substrate ...	06/10/2008
7359888	Molecular-junction-nanowire-crossbar-based neural network A method for configuring nanoscale neural network circuits using molecular-junction-nanowire crossbars, and nanoscale neural networks produced by this method. Summing of weighted inputs within a neural-network node is implemented using variable-resistance resistors ...	04/15/2008
7339184	Systems and methods for harvesting and integrating nanowires The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nano...	03/04/2008
7330709	Receiver circuit using nanotube-based switches and logic Receiver circuits using nanotube based switches and logic. Preferably, the circuits are dual-rail (differential). A receiver circuit includes a differential input having a first and second input link, and a differential output having a first and second output link. ...	02/12/2008
7323730	Optically-configurable nanotube or nanowire semiconductor device The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region th...	01/29/2008
7307448	Interconnectable nanoscale computational stages Embodiments of the present invention implement computing circuits comprising a number of interconnectable nanoscale computational stages. Each nanoscale computational stage includes: (1) a nanoscale logic array; and (2) a number of nanoscale latch arrays interconnec...	12/11/2007
7307271	Nanowire interconnection and nano-scale device applications A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to another horizontal surface of another layer to connect the layers. The nan...	12/11/2007
7301199	Nanoscale wires and related devices The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be singl...	11/27/2007
7297615	Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing t...	11/20/2007
7294519	Semiconductor light-emitting device and method of manufacturing the same Provided are a semiconductor light-emitting device having nano-needles and a method of manufacturing the same. The provided semiconductor light-emitting device improves the extraction efficiency of photons, and includes a gallium nitride (GaN) group multi-layer and ...	11/13/2007
7276424	Fabrication of aligned nanowire lattices Methodologies associated with fabricating aligned nanowire lattices are described. One exemplary method embodiment includes providing a twist wafer bonded thin single crystal semiconductor film and a bulk single crystal substrate of the same material. Periodic non-u...	10/02/2007
7257022	Nanocrystal write once read only memory for archival storage Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor (MOSFET) in a substrate. The MOSFET has a first source/drain region, a se...	08/14/2007
7253431	Method and apparatus for solution processed doping of carbon nanotube A method is provided for doping a carbon nanotube. The method comprises exposing the nanotube to a one-electron oxidant in a solution phase. A method is also provided for forming a carbon nanotube FET device. ...	08/07/2007
7253065	Self-aligned nanotube field effect transistor and method of fabricating same A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a...	08/07/2007
7245520	Random access memory including nanotube switching elements A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a nanotube channel element having at least one electrically conductive ...	07/17/2007
7187201	Programmable logic device suitable for implementation in molecular electronics Pullup and pulldown structures can be formed using nanoscale programmable junctions. These devices can be integrated into nanoscale circuit designs and can be programmably configured, e.g., desired resistance values set. Additionally, the pullup and pulldown devices...	03/06/2007
7180107	Method of fabricating a tunneling nanotube field effect transistor A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the transistor. Electrical contacts are provided for the doped regions and ...	02/20/2007
7161168	Superlattice nanopatterning of wires and complex patterns Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the wires at the desired dimensions and transferring them to a planar sub...	01/09/2007
7154778	Nanocrystal write once read only memory for archival storage Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor (MOSFET) in a substrate. The MOSFET has a first source/drain region, a se...	12/26/2006
7115916	System and method for molecular optical emission A light emitting device comprises a gate electrode, a channel comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the gate electrode, a source coupled to a first end of the channel injecti...	10/03/2006
7112816	Carbon nanotube sensor and method of producing the same A carbon nanotube sensor and a method of producing the carbon nanotube sensor are disclosed. The sensor detects small particles and molecules. The sensor includes a gate, a source and a drain positioned on the gate, and a carbon nanotube grown from a catalytic mater...	09/26/2006
7105874	Single electron transistor having memory function A single electron transistor having a memory function and a fabrication method thereof are disclosed. In the single electron transistor, a first substrate and an insulation film are sequentially stacked, a second substrate is stacked on the insulation film and inclu...	09/12/2006
7102157	Nanotube-based vacuum devices New, hybrid vacuum electronic devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown normally to the cathode plane. Arrays of the nanotubes are also cons...	09/05/2006
7087920	Nanowire, circuit incorporating nanowire, and methods of selecting conductance of the nanowire and configuring the circuit A nanowire includes a single crystalline semiconductor material having an exterior surface and an interior region and at least one dopant atom. At least a portion of the nanowire thermally switches between two conductance states; a high conductance state, where a hi...	08/08/2006

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Class 977/938 - Field Effect transistors (FETs) with nanowire- or nanotube-channel region