Bizarre Patents
Pizza Pie With Concentric Rings of Crust
A pizza mold for forming a plurality of concentric raised ridges of dough (i.e., crust) on the surface of a pizza pie.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7443027 | Electronic device having coalesced metal nanoparticles An apparatus composed of: (a) a substrate; and (b) a deposited composition comprising a liquid and a plurality of metal nanoparticles with a covalently bonded stabilizer. ... | 10/28/2008 |
| 7436033 | Tri-gated molecular field effect transistor and method of fabricating the same A tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region... | 10/14/2008 |
| 7411235 | Spin transistor, programmable logic circuit, and magnetic memory A spin transistor includes a first conductive layer that is made of a ferromagnetic material magnetized in a first direction, and functions as one of a source and a drain; a second conductive layer that is made of a ferromagnetic material magnetized in one of the fi... | 08/12/2008 |
| 7394118 | Chemical sensor using semiconducting metal oxide nanowires Indium oxide nanowires are used for determining information about different chemicals or Biologics. Chemicals are absorbed to the surface of the nanowires, and cause the semiconducting characteristics of the Nanowires to change. These changed characteristics are sen... | 07/01/2008 |
| 7382017 | Nano-enabled memory devices and anisotropic charge carrying arrays Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is de... | 06/03/2008 |
| 7365395 | Artificial dielectrics using nanostructures Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric m... | 04/29/2008 |
| 7336523 | Memory device using nanotube cells A memory device using a nanotube cell comprises a plurality of nanotube sub-cell arrays each having a hierarchical bit line structure including a main bit line and a sub-bit line. In the memory device, a nanotube cell array comprising a capacitor and a PNPN nanotube... | 02/26/2008 |
| 7323730 | Optically-configurable nanotube or nanowire semiconductor device The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region th... | 01/29/2008 |
| 7312155 | Forming self-aligned nano-electrodes A nano-electrode or nano-wire may be etched centrally to form a gap between nano-electrode portions. The portions may ultimately constitute a single electron transistor. The source and drain formed from the electrode portions are self-aligned with one another. Using... | 12/25/2007 |
| 7301199 | Nanoscale wires and related devices The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be singl... | 11/27/2007 |
| 7300860 | Integrated circuit with metal layer having carbon nanotubes and methods of making same A method of fabricating an integrated circuit comprises forming or providing a solution containing carbon nanotubes and forming a metal layer utilizing the solution. ... | 11/27/2007 |
| 7298013 | Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric l... | 11/20/2007 |
| 7245520 | Random access memory including nanotube switching elements A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a nanotube channel element having at least one electrically conductive ... | 07/17/2007 |
| 7211464 | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bu... | 05/01/2007 |
| 7176505 | Electromechanical three-trace junction devices Three trace electromechanical circuits and methods of using same. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. An insulative layer is disposed on one of the f... | 02/13/2007 |
| 6670631 | Low-forward-voltage molecular rectifier A single molecular species having a low-forward-voltage rectifying property is provided. The molecular species is represented by the formula: where A is a "conducting" moiety (with a relatively narrow HOMO-LUMO gap), IL and IR are each an "insulating" moiety (... | 12/30/2003 |
| 6653700 | Transistor structure and method of fabrication A novel transistor structure and its method of fabrication. According to the present invention, the transistor includes an intrinsic silicon body having a first surface. A gate dielectric is formed on the first surface of the intrinsic silicon body. A gat... | 11/25/2003 |
| 4866488 | Ballistic transport filter and device An energy filter for carriers in semiconductor devices and devices with such filters are disclosed. The filter is a superlattice and the filtering action arises from the subbands and gaps in the conduction and valence bands of the superlattice. A heteroju... | 09/12/1989 |
| 4829016 | Bipolar transistor by selective and lateral epitaxial overgrowth Silicon epitaxial lateral overgrowth (ELO) techniques are employed to fabricate bipolar transistors. ELO bipolar devices have may advantages in reducing parasitic values. Because the heavily doped buried layer (or sub-collector) is eliminated in ELO struc... | 05/09/1989 |
| 4721601 | Molecule-based microelectronic devices Several types of new microelectronic devices including diodes, transistors, sensors, surface energy storage elements, and light-emitting devices are disclosed. The properties of these devices can be controlled by molecular-level changes in electroactive p... | 01/26/1988 |
| 4613541 | Electronic device using electron transport proteins An electronic device comprises a substrate (16) of glass, a plurality of elongated electrodes (17) which are provided in parallel with each other on the glass substrate, a first electron transport protein film (18) prepared by cytochrome c formed on the e... | 09/23/1986 |
