Apparatus for Simulating a High Five
A self-righting hand-arm configuration which is adapted to pivot when struck by a user, thereby simulating a "high five."
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7435353 | Patterning by energetically-stimulated local removal of solid-condensed-gas layers and solid state chemical reactions produced with such layers The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energ... | 10/14/2008 |
| 7410901 | Submicron device fabrication A method for fabricating substrate material to include trenches and unreleased beams with submicron dimensions includes etching a first oxide layer on the substrate to define a first set of voids in the first oxide layer to expose the substrate. A second oxide layer... | 08/12/2008 |
| 7374731 | Reaction apparatus for producing vapor-grown carbon fibers and continuous production system thereof A reaction apparatus for producing vapor-grown carbon fibers (VGCF) and a continuous production system for producing VGCF are disclosed. The VGCF reaction apparatus is featured in installing a plurality of holes on the upper portion of inner tubes; and filling therm... | 05/20/2008 |
| 7371677 | Laterally grown nanotubes and method of formation A semiconductor device has lateral conductors or traces that are formed of nanotubes such as carbon. A sacrificial layer is formed overlying the substrate. A dielectric layer is formed overlying the sacrificial layer. A lateral opening is formed by removing a portio... | 05/13/2008 |
| 7323218 | Synthesis of composite nanofibers for applications in lithium batteries Methods of fabricating one-dimensional composite nanofiber on a template membrane with porous array by chemical or physical process are disclosed. The whole procedures are established under a base concept of “secondary template”. First of all, tubular first nano... | 01/29/2008 |
| 7258807 | Controlled growth of gallium nitride nanostructures A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of GaN nanostructures, such as single wall nanotub... | 08/21/2007 |
| 7214361 | Method for synthesis of carbon nanotubes Carbon nanotubes are formed by chemical vapor deposition using metal nanoparticles as a growth substrate. Control over the size and properties of the carbon nanotubes is achieved by controlling the size of the metal nanoparticles in the growth substrate. The metal n... | 05/08/2007 |
| 7169673 | Atomic layer deposited nanolaminates of HfO/ZrOfilms as gate dielectrics A dielectric film containing HfO2/ZrO2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is ... | 01/30/2007 |
| 6692324 | Single self-aligned carbon containing tips Systems and methods are described for a single self-aligned carbon nanofiber emitters within a dielectric well. A method, includes: providing a substrate; defining lithographically a catalyst particle, the catalyst particle coupled to the substrate; depos... | 02/17/2004 |
| 6673392 | Method of vertically aligning carbon nanotubes on substrates at low pressure using thermal chemical vapor deposition with DC bias A method of vertically aligning pure carbon nanotubes on a large glass or silicon substrate at a low temperature using a low pressure DC thermal chemical vapor deposition method is provided. In this method, catalytic decomposition with respect to hydro-ca... | 01/06/2004 |
| 6660660 | Methods for making a dielectric stack in an integrated circuit An ultrathin aluminum oxide and lanthanide layers, particularly formed by an atomic layer deposition (ALD) type process, serve as interface layers between two or more materials. The interface layers can prevent oxidation of a substrate and can prevent dif... | 12/09/2003 |
| 6641767 | Methods for replication, replicated articles, and replication tools A method of replicating a structured surface that includes providing a tool having a structured surface having a surface morphology of a crystallized vapor deposited material; and replicating the structured surface of the tool to form a replicated article... | 11/04/2003 |
| 6638818 | Method of fabricating a dynamic random access memory with increased capacitance A method for forming a dynamic random access memory with increased capacitance includes preparing (36) ultra-fine particles in a microemulsion. The particles are deposited (38) on the lower electrode layer of the memory cell. A micro-villus pattern is the... | 10/28/2003 |
| 6630395 | Methods for fabricating electrical connections to semiconductor structures incorporating low-k dielectric materials Low-k dieclectric materials have desirable insulating characteristics for use in insulating sub micron conductors in semiconductor devices. However, certain physical and material characteristics of the low-k dielectric materials make them difficult to wor... | 10/07/2003 |
| 6629869 | Method of making flat panel displays having diamond thin film cathode A field emission cathode is provided which includes a substrate and a conductive layer desposed adjacent the substrate. An electrically resistive pillar is disposed adjacent the conductive layer, the resistive pillar having a substantially flat surface sp... | 10/07/2003 |
| 6613301 | Method for producing nanometer-sized ultrafine titanium dioxide A method for producing nano-sized titanium dioxide (TiO2) ultrafine powder from titanium tetrachloride (TiCl4) in the vapor phase by the gas phase oxidation reaction using flames, in which the method comprises: simultaneously introdu... | 09/02/2003 |