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| Number | Title | Issue Date |
| 7476787 | Addressable field enhancement microscopy Systems and methods for addressable field enhancement microscopy are provided. In an embodiment, a nanoscale array of islands may be illuminated with an electromagnetic signal and addressed to differentiate signals from different islands of the nanoscale array. The ... | 01/13/2009 |
| 7285431 | Method for manufacturing a GaN based LED of a black hole structure This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate m... | 10/23/2007 |
| 7265374 | Light emitting semiconductor device A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current ther... | 09/04/2007 |
| 7180066 | Infrared detector composed of group III-V nitrides A quantum-well infrared photodetector (QWIP) is presented. The photodetector includes a substrate, a buffer layer, a first conductive layer, a multiple quantum well, an optional blocking layer, and a second conductive layer. Substrate is composed of a monocrystal wh... | 02/20/2007 |
| 7102173 | Nitride semiconductor device and method of manufacturing the same Provided are a nitride semiconductor device and method of manufacturing the same. In the method, semiconductor nanorods are vertically grown on a substrate, and then a nitride semiconductor thin film is deposited on the substrate having the semiconductor nanorods. A... | 09/05/2006 |
| 7098112 | Preparation of field emission array comprising nanostructures A field emission array which does not contain any organic material is manufactured by separately preparing nanostructures whose one ends were coated and then adhering the coated ends of the nanostructures to a metal electrode layer formed on a substrate. ... | 08/29/2006 |
| 6674091 | Multi-quantum-well detector for low-background applications Device designs and techniques for reducing the dark current in quantum-well detectors.... | 01/06/2004 |
| 6664561 | Light-receiving device with quantum-wave interference layers A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C1 to C... | 12/16/2003 |
| 6642537 | Dual band QWIP focal plane array A quantum well infrared photodetector (QWIP) that provides two-color image sensing. Two different quantum wells are configured to absorb two different wavelengths. The QWIPs are arrayed in a focal plane array (FPA). The two-color QWIPs are selected for re... | 11/04/2003 |
