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"I hate what they've done to my child...I would never let my own children watch it. "
Vladimir Zworykin, television pioneer ; Talking about an invention in which he played a critical role.
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| Number | Title | Issue Date |
| 7329567 | Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage Vertical field effect transistors having a channel region defined by at least one semiconducting nanotube and methods for fabricating such vertical field effect transistors by chemical vapor deposition using a spacer-defined channel. Each nanotube is grown by chemic... | 02/12/2008 |
| 7271434 | Capacitor with insulating nanostructure The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper con... | 09/18/2007 |
| 7258745 | Method for fabricating hafnia films The present invention comprises a method for fabricating hafnia film comprising the steps of providing a substrate having a surface that allows formation of a self-assembled monolayer thereon via covalent bonding; providing an aqueous solution that provides homogene... | 08/21/2007 |
| 7235184 | Solid state membrane channel device for the measurement and characterization of atomic and molecular sized samples A solid state device is formed through thin film deposition techniques which results in a self-supporting thin film layer that can have a precisely defined channel bored therethrough. The device is useful in the chacterization of polymer molecules by measuring chang... | 06/26/2007 |
| 7214611 | Imprinting-damascene process for metal interconnection The present invention first obtains a nano-metal line by an e-beam lithography and an electroless plating, and imprints the line into a material with low-K to obtain a damascene metal line with low cost and high throughput, as a future solution for a metallization p... | 05/08/2007 |
| 7208094 | Methods of bridging lateral nanowires and device using same A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated ... | 04/24/2007 |
| 7199305 | Protosubstrates The invention provides a nanolithographic protosubstrate adapted for nanolithographic formation of nanostructures on the protosubstrate comprising: a substrate having a top surface exposed for nanolithographic formation of nanostructures, wherein the top surface com... | 04/03/2007 |
| 7189378 | Miniature reaction chamber template structure for fabrication of nanoscale molecular systems and devices A unique, micro-miniature reaction chamber template structure is disclosed for the fabrication of nanoscale molecular systems and devices. The structure is composed of multiple layers of silicon (either doped or intrinsic), Pyrex and various metals. The silicon may ... | 03/13/2007 |
| 7112525 | Method for the assembly of nanowire interconnects The present invention provides a method for the synthesis of nanowires in a silicon nanoporous template by electrodeposition and a novel technique for the integration of nanowires to transduction surfaces. In accordance with the present invention, a method for the f... | 09/26/2006 |
| 6674121 | Method and system for molecular charge storage field effect transistor A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules between a gate and channel of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard pra... | 01/06/2004 |
| 6653700 | Transistor structure and method of fabrication A novel transistor structure and its method of fabrication. According to the present invention, the transistor includes an intrinsic silicon body having a first surface. A gate dielectric is formed on the first surface of the intrinsic silicon body. A gat... | 11/25/2003 |
| 6648711 | Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter A field emitter having a high current density even at a low voltage using a carbon nanotube film, a method of manufacturing the same, and a field emission display device having the field emitter, are provided, The field emitter includes an insulating subs... | 11/18/2003 |
| 6638823 | Ultra small size vertical MOSFET device and method for the manufacture thereof The present invention relates to an ultra small size vertical MOSFET device having a vertical channel and a source/drain structure and a method for the manufacture thereof by using a silicon on insulator (SOI) substrate. To begin with, a first silicon con... | 10/28/2003 |
| 4829016 | Bipolar transistor by selective and lateral epitaxial overgrowth Silicon epitaxial lateral overgrowth (ELO) techniques are employed to fabricate bipolar transistors. ELO bipolar devices have may advantages in reducing parasitic values. Because the heavily doped buried layer (or sub-collector) is eliminated in ELO struc... | 05/09/1989 |
