Celebrity Inventors
Glam girl Heddy Lamar may have used her good looks to good effect on the silver screen, but she put her smarts to better use as an inventor. During World War II, she co-patented a frequency-switching system for torpedo guidance that was considered years ahead of its time.
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| Number | Title | Issue Date |
| 6413923 | Non-corrosive cleaning composition for removing plasma etching residues A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting of amines and qua... | 07/02/2002 |
| 6403544 | Composition and method for removing photoresist materials from electronic components The invention is a combination of at least one dense phase fluid and at least one dense phase fluid modifier which can be used to contact substrates for electronic parts such as semiconductor wafers or chips to remove photoresist materials which are appli... | 06/11/2002 |
| 6399551 | Alkanolamine semiconductor process residue removal process A two carbon atom linkage alkanolamine compound composition comprises the two carbon atom linkage alkanolamine compound, gallic acid or catechol, and optionally, an aqueous hydroxylamine solution. The balance of the composition is made up of water, prefer... | 06/04/2002 |
| 6398874 | Use of alkoxy N-hydroxyalkyl alkanamide as resist removing agent, composition for removing resist, method for preparing the same and resist removing method using the same A resist removing agent and a resist removing composition, having an excellent capability for removing a resist and polymer and which does not attack underlying layers, a method for preparing the same and a resist removing method using the same. The resis... | 06/04/2002 |
| 6394106 | Cleaning solutions and methods for semiconductor wafers A mixture for cleaning slurries left on the surface of a semiconductor wafer, after a polishing step, includes a caustic, an anionic surfactant, a non-ionic surfactant, and water. The caustic provides an etch rate on the surface to be cleaned in the range... | 05/28/2002 |
| 6395693 | Cleaning solution for semiconductor surfaces following chemical-mechanical polishing A composition and method are provided for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been chemically-mechanically polished. The cleaning composition comprises a carboxylic acid, an amine-containing compound, a phos... | 05/28/2002 |
| 6395699 | Method of removing grease, oil or flux from an article A solvent composition comprising (a) dichloropentafluoropropane, (b) trans-1,2-dichloroethylene and (c) methanol, wherein the proportions of (a), (b) and (c) in the total amount of (a), (b) and (c) are from 57 to 75 wt %, from 20 to 35 wt % and from 5 to ... | 05/28/2002 |
| 6387859 | Method and cleaner composition for stripping copper containing residue layers A cleaner composition for removing from within a microelectronic fabrication a copper containing residue layer in the presence of a copper containing conductor layer, and a method for stripping from within a microelectronic fabrication the copper containi... | 05/14/2002 |
| 6379875 | Stripper pretreatment Disclosed are compositions useful for the pretreatment of polymeric material to be removed from substrates, such as electronic devices. The compositions of the present invention are particularly suitable for pretreating polymer residues from plasma etch p... | 04/30/2002 |
| 6372410 | Resist stripping composition A resist stripping composition contains 0.001 to 0.5% by weight of a fluorine compound, 50 to 99% by weight of an ether solvent and the balance being substantially water. With such a specific content range of the ether solvent, the resist stripping compos... | 04/16/2002 |
| 6372050 | Non-corrosive stripping and cleaning composition A non-corrosive photoresist stripping and cleaning composition, comprising: (a) about 5% to about 50% of a solvent; (b) about 10% to about 90% of an alkanolamine; (c) about 0.1 to 10% of a carboxylic acid; and (d) about 1.0% to 40% of water.... | 04/16/2002 |
| 6368421 | Composition for stripping photoresist and organic materials from substrate surfaces The invention relates to the field of microelectronics, such as integrated circuits, and more particularly to compositions and methods of removing photoresists or other organic materials from the surfaces of substrates used in the fabrication of integrate... | 04/09/2002 |
| 6367486 | Ethylenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal process An ethylenediaminetetraacetic acid or a mono-, di-, tri- or tetraammonium salt thereof residue cleaning composition removes photoresist and other residue from integrated circuit substrates. The balance of the composition is desirably made up of water, pre... | 04/09/2002 |
| 6361712 | Composition for selective etching of oxides over metals A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.... | 03/26/2002 |
| 6358899 | Cleaning compositions and use thereof containing ammonium hydroxide and fluorosurfactant An aqueous composition comprising ammonium hydroxide in an amount of about 1 to about 30% by weight calculated as NH3 and a surface active agent represented by the formula XF2 C(CFY)n SO3 A wherein X=F, OH or SO... | 03/19/2002 |
| 6340395 | Salsa clean process A wet spray cleaning process for removing thick organic layers including hardened photoresist from the surface of silicon wafers yields low residual particle counts for photoresist thicknesses up to 3 microns, and maintains low residual particle density f... | 01/22/2002 |
| 6340559 | Semiconductor developing agent Provided herein are developer solutions useful in producing semiconductor-based circuit elements or precursors thereof, which contain tris-(2-hydroxyethyl)methylammonium hydroxide. Developers according to the invention are either aqueous or alcoholic solu... | 01/22/2002 |
| 6340253 | Resist peeling system and control method of a resist peeling solution A resist peeling system includes a peeling solution tank for storing a resist peeling solution; an electric conductivity monitor for monitoring the electric conductivity of a resist peeling solution; and a additive components tank for estimating the compo... | 01/22/2002 |
| 6338976 | Method for forming optoelectronic microelectronic fabrication with attenuated bond pad corrosion Within a method for fabricating an microelectronic fabrication there is first provided a substrate employed within an optoelectronic microelectronic fabrication, where the substrate comprises an optoelectronic microelectronic device which is in electrical... | 01/15/2002 |
| 6323169 | Resist stripping composition and process for stripping resist An aqueous resist stripping composition contains (a) an oxidizing agent, (b) a chelating agent, (c) a water-soluble fluorine compound, and optionally (d) an organic solvent. Also provided is a process of stripping resist films and resist residues remainin... | 11/27/2001 |
| 6319885 | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The ... | 11/20/2001 |
| 6319884 | Method for removal of cured polyimide and other polymers Non-aqueous cleaning compositions capable of removing cured polyimides and other polymers from a metal circuitry containing substrate such as a semiconductor device for rework and other purposes without any significant adverse affect on the circuitry are ... | 11/20/2001 |
| 6313078 | Cleaning composition for removing resist and method of removing resist A cleaning composition which includes a surfactant containing a phenyl group, a sulfonated aromatic compound, and water is prepared. The cleaning composition is especially useful for effectively removing deposited contaminants adhered mainly to a resist d... | 11/06/2001 |
| 6313048 | Dilute cleaning composition and method for using same A cleaning method in a semiconductor fabrication process includes providing a dilute composition consisting essentially of phosphoric acid and acetic acid and exposing a surface, e.g., aluminum, to the dilute composition. For example, the dilute compositi... | 11/06/2001 |
| 6310019 | Cleaning agent for a semi-conductor substrate This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. The said cleaning agent and the method have made it pos... | 10/30/2001 |
| 6310020 | Stripping composition for resist A stripping composition for a resist comprising a polycarboxylic acid and/or a salt thereof, and water, wherein a pH of the stripping composition is less than 8; and a stripping composition for a resist comprising 0.01 to 90% by weight of an organic acid ... | 10/30/2001 |
| 6306807 | Boric acid containing compositions for stripping residues from semiconductor substrates The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): | 10/23/2001 |
| 6303482 | Method for cleaning the surface of a semiconductor wafer A method for cleaning the surface of a semiconductor wafer is disclosed. A plasma ashing process is performed on the surface of the semiconductor wafer. The plasma ashing process is performed in a chamber that contains oxygen and carbon tetrafluoride (CF | 10/16/2001 |
| 6303554 | Plastic surface cleaning using a KOH/alcohol solution A method for pretreating a plastic surface in a coating process. The plastic surface is immersed in a solution containing iso-propanol, or another light alcohol, and potassium hydroxide (KOH). The method and the solution according to the present invention... | 10/16/2001 |
| 6303551 | Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper film A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by we... | 10/16/2001 |
| 6294027 | Methods and apparatus for cleaning semiconductor substrates after polishing of copper film A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and ... | 09/25/2001 |
| 6291142 | Photoresist stripping liquid compositions and a method of stripping photoresists using the same The present invention relates to photoresist stripping liquid compositions comprising (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 25-40 wt % of at least one member selected from monoethanolamine and diethanolamine, (d) 20-32 wt % of dime... | 09/18/2001 |
| 6291410 | Compositions for the stripping of photoresists in the fabrication of integrated circuits For the stripping of photoresists, the invention proposes to use a mixture of dimethyl sulphoxide DMSO) or N-methylpyrrolidone (NMP) and 3-methoxypropylamine (MOPA). Advantageously, a little water and a corrosion inhibitor, such as sodium tolyltriazolate,... | 09/18/2001 |
| 6276372 | Process using hydroxylamine-gallic acid composition A hydroxylamine-gallic compound composition comprises a hydroxylamine compound, at least one alcohol amine compound which is miscible with the hydroxylamine compound and a gallic compound. A process for removing photoresist or other polymeric material or ... | 08/21/2001 |
| 6277799 | Aqueous cleaning of paste residue This invention relates to an aqueous cleaning method for removal of metal-organic composite paste residue from the surface of components, such as, screening masks, associated paste screening equipment, substrates, to name a few. The invention is particula... | 08/21/2001 |
| 6274537 | Use of alkoxy N-hydroxyalkyl alkanamide as resist removing agent, composition for removing resist, method for preparing the same and resist removing method using the same A resist removing agent and a resist removing composition, having an excellent capability for removing a resist and polymer and which does not attack underlying layers, a method for preparing the same and a resist removing method using the same. The resis... | 08/14/2001 |
| 6273959 | Method of cleaning semiconductor device There is disclosed a semiconductor device cleaning method involving placing a cleaning solution containing 24 wt. % sulfuric acid, 5 wt. % hydrogen peroxide, 0.02 wt. % hydrogen fluoride, 0.075 wt. % n-dodecylbenzenesulfonic acid, and water into a quartz ... | 08/14/2001 |
| 6268323 | Non-corrosive stripping and cleaning composition A non-corrosive photoresist stripping and cleaning composition, comprising: (a) about 5% to about 50% of a solvent; (b) about 10% to about 90% of an alkanolamine; (c) about 0.1 to 10 % of a carboxylic acid; and (d) about 1.0% to 40% of water.... | 07/31/2001 |
| 6268115 | Use of alkylated polyamines in photoresist developers This invention provides water-based photoresist developer/electronics cleaning compositions manifesting reduced equilibrium and dynamic surface tension by the incorporation as surfactant of an effective amount of certain dialkyl polyamine compounds of str... | 07/31/2001 |
| 6265309 | Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same A cleaning agent for use in producing semiconductor devices. The cleaning agent is an aqueous solution containing (A) a fluorine-containing compound, (B) a salt of boric acid, (C) a water-soluble organic solvent, and optionally, (D) a specific quaternary ... | 07/24/2001 |
