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| Number | Title | Issue Date |
| 8178482 | Cleaning compositions for microelectronic substrates A stripping and cleaning composition for cleaning microelectronics substrates, the composition comprising: at least one organic stripping solvent, at least one nucleophilic amine, at least one non-nitrogen containing weak acid in an amount sufficient to neutralize f... | 05/15/2012 |
| 8173584 | Composition and method for treating semiconductor substrate surface The present invention is directed to compositions and method of use for treating semiconductor substrate comprising a sulfonium compound and a nucleophilic amine in the fabrication of electronic devices. Optionally, the said composition further comprises a chelating... | 05/08/2012 |
| 8168577 | Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion A microelectronic cleaning compositions of: a) from about 80% to about 99% by weight of the composition of at least one organic sulfone; b) from about 0.5% to about 19% by weight of the composition of water; and c) from about 0.5% to about 10% by weight of the compo... | 05/01/2012 |
| 8158569 | Cleaning solvent and cleaning method for metallic compound Disclosed are cleaning solvents and cleaning methods for metallic compounds deposited on the equipment that supplies organometallic compounds to the manufacturing tool in the photovoltaic industry or the semiconductor industry. The cleaning solvents and the cleaning... | 04/17/2012 |
| 8158568 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith It is disclosed a cleaning liquid used in a process for forming a dual damascene structure comprising steps of etching a low dielectric layer (low-k layer) accumulated on a substrate having thereon a metallic layer to form a first etched-space; charging a sacrifice ... | 04/17/2012 |
| 8148310 | Composition and method for cleaning semiconductor substrates comprising an alkyl diphosphonic acid The compositions and methods herein relate to the method for the removal of residues and contaminants from metal or dielectric surfaces. Particularly, a composition and method of cleaning residues after chemical mechanical polishing of a copper or aluminum surface o... | 04/03/2012 |
| 8148311 | Composition and method for cleaning semiconductor substrates comprising an alkyl diphosphonic acid The compositions and methods for the removal of residues and contaminants from metal or dielectric surfaces comprises at least one alkyl diphosphonic acid, at least one second acidic substance at a mole ratio of about 1:1 to about 10:1 in water, and pH is adjusted t... | 04/03/2012 |
| 8143203 | Method for washing device substrate The present invention provides a washing method for a device substrate, capable of sufficiently removing a resist attached to a device substrate, particularly a resist attached to fine pore portions of a pattern having a large aspect ratio. A method for washi... | 03/27/2012 |
| 8129322 | Photosensitive-resin remover composition and method of fabricating semiconductor device using the same A photosensitive-resin remover composition includes an amine compound and de-ionized water, an amount of the de-ionized water being about 45% to about 99% by weight based on a total weight of the composition. ... | 03/06/2012 |
| 8114825 | Photoresist stripping solution Disclosed is a photoresist stripping solution consisting essentially of (a) a quaternary ammonium hydroxide (e.g., tetramethylammonium hydroxide), (b) at least one water-soluble organic solvent selected from glycols and glycol ethers (e.g., propylene glycol, ethylen... | 02/14/2012 |
| 8110534 | Cleaning solution for substrate for semiconductor device and process for producing substrate for semiconductor device To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whe... | 02/07/2012 |
| 8105997 | Composition and application of a two-phase contaminant removal medium The embodiments provide substrate cleaning techniques to remove contaminants from the substrate surface to improve device yield. The substrate cleaning techniques utilize a cleaning material with solid components and polymers with a large molecular weight dispersed ... | 01/31/2012 |
| 8105998 | Liquid composition for removing photoresist residue and polymer residue Provided is a liquid composition for, at a low temperature in a short time, removing a photoresist residue and a polymer residue generated in a semiconductor circuit element manufacturing process A residue removing method using such composition is also provided. The... | 01/31/2012 |
| 8101561 | Composition and method for treating semiconductor substrate surface The present invention is directed to compositions and method of use for treating semiconductor substrate comprising a sulfonium compound and a nucleophilic amine in the fabrication of electronic devices. Optionally, the said composition further comprises a chelating... | 01/24/2012 |
| 8097575 | Composition and method for cleaning and neutralizing a surface A method and new use of an aqueous composition including a surfactant and a buffering agent, wherein the new use and method include the steps of applying the composition to a surface with an acidic finish, etching the surface, and removing the aqueous composition. T... | 01/17/2012 |
| 8080505 | Slurry composition and method for chemical mechanical polishing of copper integrated with tungsten based barrier metals The present invention is related to a slurry composition for polishing copper integrated with tungsten containing barrier layers and its use in a CMP method. The present invention is also related to a method for polishing copper integrated with tungsten containing b... | 12/20/2011 |
| 8067352 | Aqueous cleaning composition for semiconductor copper processing The invention relates to an aqueous cleaning composition for use in a cleaning process during or after a chemical mechanical planarization for a copper integrated circuit processing, comprising 0.05 to 20 wt % of a nitrogen-containing heterocyclic organic base, 0.05... | 11/29/2011 |
| 8063006 | Aqueous cleaning composition for semiconductor copper processing The invention relates to an aqueous cleaning composition for wafers with copper wires that have been treated by chemical mechanical planarization in an integrated circuit processing, comprising 0.1 to 15 wt % of a nitrogen-containing heterocyclic organic base, 0.1 t... | 11/22/2011 |
| 8063007 | Removing agent composition and removing/cleaning method using same The present invention relates to a removal cleaning method for a semiconductor substrate or a semiconductor device with metal wirings by using a remover composition, wherein the remover composition contains a dissolution agent having an alumina dissolution amount as... | 11/22/2011 |
| 8058219 | Metals compatible post-etch photoresist remover and/or sacrificial antireflective coating etchant A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least ... | 11/15/2011 |
| 8058220 | Cleaning liquid for lithography and a cleaning method using it for photoexposure devices Problem: To provide a cleaning liquid for lithography and a cleaning method using it for photoexposure devices. In a process of liquid immersion lithography, the cleaning liquid may efficiently clean the photoexposure device site (especially optical lens member) con... | 11/15/2011 |
| 8058221 | Composition for removing a photoresist and method of manufacturing semiconductor device using the composition Provided are a composition for removing a photoresist and a method of manufacturing a semiconductor device using the composition. The composition includes about 60-90 wt % of dimethyl sulfoxide, about 10-30 wt % of a polar organic solvent, about 0.5-1.5 wt % of hydr... | 11/15/2011 |
| 8044009 | Compositions for cleaning ion implanted photoresist in front end of line applications A front end of the line (FEOL) stripping and cleaning composition for cleaning unashed ion-implanted photoresist from a wafer substrate comprises: a) at least one organic stripping solvent, b) fluoride ions from at least one of ammonium fluoride, ammonium bifluoride... | 10/25/2011 |
| 8030263 | Composition for stripping and cleaning and use thereof A composition comprising one or more water soluble organic solvents comprising a glycol ether; water; a fluoride containing compound provided that if the fluoride containing compound is ammonium fluoride than no additional fluoride containing compound is added to th... | 10/04/2011 |
| 8026200 | Low pH mixtures for the removal of high density implanted resist A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively ... | 09/27/2011 |
| 8017568 | Cleaning residues from semiconductor structures Supercritical carbon dioxide may be utilized to remove resistant residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The supercritical carbon dioxide may include an oxidizer in one embodiment. ... | 09/13/2011 |
| 8012921 | Composition for stripping photoresist and method for manufacturing thin transistor array panel using the same The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent. ... | 09/06/2011 |
| 8003587 | Semiconductor process residue removal composition and process A composition that includes 2-(2-aminoethylamino)-ethanol, at least one of a chelating agent and a corrosion inhibitor, and water. The composition is capable of removing organic, organometallic and metal oxide residues from semiconductor substrates. The invention al... | 08/23/2011 |
| 7998914 | Cleaning solution for semiconductor device or display device, and cleaning method A cleaning solution for semiconductor devices or display devices containing a polyamine of a specified structure having two or more amino groups in adjacent positions of a carbon chain or a salt thereof and a cleaning method of semiconductor devices or display devic... | 08/16/2011 |
| 7994108 | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one al... | 08/09/2011 |
| 7985723 | Fluorinated sulfonamide surfactants for aqueous cleaning solutions Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-con... | 07/26/2011 |
| 7977292 | Cleaning composition and process for producing semiconductor device A cleaning composition of a semiconductor device for laminating an organosiloxane-based thin film and a photoresist layer in this order on a substrate having a low dielectric interlayer insulation film and a copper wiring or a copper alloy wiring, then applying sele... | 07/12/2011 |
| 7968506 | Wet cleaning stripping of etch residue after trench and via opening formation in dual damascene process After trench line pattern openings and via pattern openings are formed in a inter-metal dielectric insulation layer of a semiconductor wafer using trench-first dual damascene process, the wafer is wet cleaned in a single step wet clean process using a novel wet clea... | 06/28/2011 |
| 7968507 | Composition for stripping and stripping method The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or... | 06/28/2011 |
| 7960328 | Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achiev... | 06/14/2011 |
| 7951765 | Photoresist stripper composition for semiconductor manufacturing The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compo... | 05/31/2011 |
| 7951764 | Non-aqueous, non-corrosive microelectronic cleaning compositions Back end photoresist strippers and cleaning compositions of this invention are provided by amino acid-free, non-aqueous cleaning compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise at least one polar organic solvent, a... | 05/31/2011 |
| 7947638 | Composition for cleaning semiconductor device A sulfur-containing detergent composition for cleaning a semiconductor device having an aluminum wire, wherein the sulfur-containing detergent composition is capable of forming a protective film containing a sulfur atom on a surface of an aluminum film in a protecti... | 05/24/2011 |
| 7947637 | Cleaning formulation for removing residues on surfaces The present disclosure provides a non-corrosive cleaning composition that is useful for removing residues from a semiconductor substrate. The composition can comprise water, at least one hydrazinocarboxylic acid ester, at least one water soluble carboxylic acid, opt... | 05/24/2011 |
| 7943562 | Semiconductor substrate cleaning methods, and methods of manufacture using same In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weig... | 05/17/2011 |
