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| Number | Title | Issue Date |
| 7439208 | Growth of in-situ thin films by reactive evaporation A method of forming MgB2 films in-situ on a substrate includes the steps of (a) depositing boron onto a surface of the substrate in a deposition zone; (b) moving the substrate into a reaction zone containing pressurized, gaseous magnesium; (c) moving the ... | 10/21/2008 |
| 7338683 | Superconductor fabrication processes A method of forming a superconductive device is provided, including providing a substrate having a dimension ratio of not less than about 102, depositing a buffer film to overlie the substrate by ion beam assisted deposition utilizing and ion beam, monito... | 03/04/2008 |
| 7335283 | Production method for composite oxide thin film and device therefor and composite oxide film produced thereby A method and an apparatus which permits making a composite oxide thin film excellent in crystallinity easily and at a low temperature, with the capability of controlling the basic unit cell structure as desired, and without the need for a post annealing, as well as ... | 02/26/2008 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7235854 | Lanthanide doped TiOdielectric films A dielectric film containing lanthamide doped TiOx and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric film is formed by ion... | 06/26/2007 |
| 7208804 | Crystalline or amorphous medium-K gate oxides, Y0and Gd0 A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Also shown is a gate oxide with a conduction band offset of 2 eV or greater. Gate oxi... | 04/24/2007 |
| 7205620 | Highly reliable amorphous high-k gate dielectric ZrON A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate dielectrics formed from metals such as zirconium are thermodynamically... | 04/17/2007 |
| 7205218 | Method including forming gate dielectrics having multiple lanthanide oxide layers A dielectric film having a layer of a lanthanide oxide and a layer of another lanthanide oxide, and a method of fabricating such a dielectric film produce a reliable gate dielectric with a equivalent oxide thickness thinner than attainable using SiO2. A g... | 04/17/2007 |
| 7199023 | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The HfSiON layer thickness is contro... | 04/03/2007 |
| 7193893 | Write once read only memory employing floating gates Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic random access memory (DRAM) fabrication process. The floating gate tra... | 03/20/2007 |
| 7135421 | Atomic layer-deposited hafnium aluminum oxide A dielectric film containing HfAlO3 and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer depos... | 11/14/2006 |
| 7101813 | Atomic layer deposited Zr-Sn-Ti-O films A dielectric film containing atomic layer deposited Zr—Sn—Ti—O and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and ox... | 09/05/2006 |
| 7087113 | Textured substrate tape and devices thereof A method for forming a sharply biaxially textured substrate, such as a single crystal substrate, includes the steps of providing a deformed metal substrate, followed by heating above the secondary recrystallization temperature of the deformed substrate, and controll... | 08/08/2006 |
| 7074744 | Apparatus for consecutive deposition of high-temperature superconducting (HTS) buffer layers A method of coating a substrate for a high temperature superconductor material is disclosed, including loading a substrate into a first deposition chamber, routing the substrate in the first deposition chamber such that the substrate forms a helical winding in the f... | 07/11/2006 |
| 6993823 | Method of manufacturing oxide superconducting wire The inventive method of manufacturing an oxide superconducting wire comprises a step (S1, S2) of preparing a wire formed by covering raw material powder of an oxide superconductor with a metal and a step (S4, S6) of heat-treating the wire... | 02/07/2006 |
| 6967154 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 11/22/2005 |
| 6958302 | Atomic layer deposited Zr-Sn-Ti-O films using TiI4 A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4 precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable usin... | 10/25/2005 |
| 6953730 | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from alloys such as cobalt-titanium are thermodynamically stable s... | 10/11/2005 |
| 6930346 | Evaporation of Y-Si-O films for medium-K dielectrics A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from yttrium, silicon, and oxygen are thermodynamically stable suc... | 08/16/2005 |
| 6921702 | Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics A dielectric film containing HfO2/ZrO2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is ... | 07/26/2005 |
| 6906008 | Apparatus for consecutive deposition of high-temperature superconducting (HTS) buffer layers The present invention is a deposition system for the production of coated substrates that provides a first deposition process that subsequently feeds a second deposition process and where the two deposition processes are occurring concurrently. The consecutive depos... | 06/14/2005 |
| 6835696 | Method of forming a superconductor film The present invention provides methods forming the superconductor of as-grown film of MgB2 which is made with magnesium and boron ejected from a magnesium target and a boron target, respectively, each in simultaneously sputtering process. The as-grown fil... | 12/28/2004 |
| 6809066 | Ion texturing methods and articles Ion texturing methods and articles are disclosed. ... | 10/26/2004 |
| 6690957 | High temperature superconductor film, method for forming the same and superconductor element A high temperature superconductor film which is Y--Ba--Cu--O-based and formed on a dielectric substrate 10, and has a Cu composition ratio to the Ba near the upper surface of the film which is higher than a Cu composition ratio to the Ba inside the film. ... | 02/10/2004 |
| 6632539 | Polycrystalline thin film and method for preparing thereof, and superconducting oxide and method for preparation thereof The polycrystalline thin film is made of a composite oxide of a cubic crystal system which has a pyrochlore type crystalline structure of a composition represented as either AZrO or AHfO (A in the formula represents a rare earth element selected from amon... | 10/14/2003 |
| 6280580 | Method for manufacturing a double-sided high-temperature superconducting oxide thin film having large area A method of manufacturing a double-sided high-temperature superconducting oxide thin film comprises the steps of placing two sintered material targets in a thin film deposition chamber; attaching a single crystal oxide substrate to a substrate supporter p... | 08/28/2001 |
| 6218341 | Process for the preparation of a high temperature superconductor A process for preparing a superconductor which is a low anisotropy, high temperature superconductor, includes providing a target in molded form comprised of one of the superconductor or constituent elements of the superconductor, the superconductor having... | 04/17/2001 |
| 6214772 | Process for preparing polycrystalline thin film, process for preparing oxide superconductor, and apparatus therefor A method is presented for making a polycrystalline thin film (B) by depositing particles emitted from a target (36) on a substrate base (A) to form the film (B) constituted by the target material while concurrently irradiating the depositing particles wit... | 04/10/2001 |
| 6174783 | Semiconductor device having a improved trench structure manufacturing method thereof, and semiconductor device manufacturing apparatus The front surface of a semiconductor substrate is formed with a trench. An insulating film is formed on the front surface of the semiconductor substrate including the trench while the bottom of the trench is kept at a higher temperature than the surface o... | 01/16/2001 |
| 6172009 | Controlled conversion of metal oxyfluorides into superconducting oxides An oxide superconductor article is provided having an oxide superconductor film having a thickness of greater than 0.5 microns disposed on a substrate, said article having a transport critical current density (Jc) of greater than or equal to ab... | 01/09/2001 |
| 6156707 | Method of manufacturing superconducting microwave component substrate A substrate for a superconducting microwave component is composed of a pair of oxide superconductor thin films formed on opposite surfaces of a dielectric substrate, respectively. After Tl-type oxide superconducting thin films are deposited the opposite s... | 12/05/2000 |
| 6106615 | Method of forming biaxially textured alloy substrates and devices thereon Specific alloys, in particular Ni-based alloys, that can be biaxially textured, with a well-developed, single component texture are disclosed. These alloys have a significantly reduced Curie point, which is very desirable from the point of view of superco... | 08/22/2000 |
| 6060433 | Method of making a microwave device having a polycrystalline ferrite substrate The invention provides a structure comprising a high temperature superconducting layer deposited on a ceramic polycrystalline ferrite plate suitable for making commercial microwave devices. In one embodiment, the high temperature superconductor is yttrium... | 05/09/2000 |
| 6057271 | Method of making a superconducting microwave component by off-axis sputtering A microwave component includes a single dielectric layer, and one pair of conductor layers formed on opposite surfaces of the dielectric layer, respectively, one of the pair of conductor layers forming a ground conductor, and the other of the pair of cond... | 05/02/2000 |
| 6037313 | Method and apparatus for depositing superconducting layer onto the substrate surface via off-axis laser ablation The method for forming superconducting films of complex oxide compounds in a process chamber according to the present invention includes the steps of: (a) placing a substrate near a target in a chamber so that the substrate is positioned to be generally p... | 03/14/2000 |
| 5939361 | Method of fabricating Tl or Hg-containing oxide superconductor film A substrate is set in a reaction chamber, to heat the substrate to a predetermined temperature. Tl, Ba, Ca, Cu and O are supplied to the substrate by a Tl evaporation source and a target, to cause a TlBaCaCuO film to grow on the substrate. The TlBaCaCuO f... | 08/17/1999 |
| 5922651 | Method for forming high tc superconductive thin films Herein disclosed is a superconductive thin film formation method of forming a superconductive thin film having a high critical temperature and a low surface resistance. The method comprises a first step of depositing a superconductive thin film layer on a... | 07/13/1999 |
| 5900391 | High temperature superconducting thin film deposition method Herein disclosed is a method for depositing a high Tc superconducting thin film. The superconducting thin film is deposited on one surface of a substrate. The substrate is exposed to an electromagnetic wave to heat the substrate during the process for dep... | 05/04/1999 |
| 5885939 | Process for forming a-axis-on-c-axis double-layer oxide superconductor films A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for J... | 03/23/1999 |
| 5811375 | Superconducting multilayer interconnection formed of oxide superconductor material and method for manufacturing the same A superconducting multilayer interconnection comprises a substrate having a principal surface, a first superconducting current path of a c-axis orientated oxide superconductor thin film formed on the principal surface of the substrate, an insulating layer... | 09/22/1998 |
