Class 505/411 - Utilizing plasma etching or sputter etching

Subclass of Class 505 - Superconductor technology: apparatus, material, process
Definition: Process wherein material is removed (a) by chemical action
No. of patents: 26
Last issue date: 09/23/2008

Number	Title	Issue Date
7427519	Method of detecting end point of plasma etching process A method of detecting an end point of a plasma etching process for etching a first layer on a second layer is described, the first layer producing a first etching product and the second layer a second etching product. Time-dependent intensity [Ij=1 to m(t...	09/23/2008
7279823	Piezoelectric actuator and liquid jet head A piezoelectric actuator comprising an optimum layer structure when (100) orientation strontium ruthenate is used as a bottom electrode is provided. This piezoelectric actuator comprises a diaphragm 30 that is constituted by (100) orientation yttria-stabilize...	10/09/2007
7259036	Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduc...	08/21/2007
7037848	Methods of etching insulative materials, of forming electrical devices, and of forming capacitors In one aspect, the invention encompasses a method of etching insulative materials which comprise complexes of metal and oxygen. The insulative materials are exposed to physical etching conditions within a reaction chamber and in the presence of at least one oxygen-c...	05/02/2006
6933065	High temperature superconducting thick films An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride materi...	08/23/2005
6921741	Substrate structure for growth of highly oriented and/or epitaxial layers thereon A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or...	07/26/2005
6809066	Ion texturing methods and articles Ion texturing methods and articles are disclosed. ...	10/26/2004
6753262	Methods of etching insulative materials, of forming electrical devices, and of forming capacitors In one aspect, the invention encompasses a method of etching insulative materials which comprise complexes of metal and oxygen. The insulative materials are exposed to physical etching conditions within a reaction chamber and in the presence of at least one oxygen-c...	06/22/2004
6627555	Method and circuit for minimizing the charging effect during manufacture of semiconductor devices A protection device which is active during the manufacturing process of a semiconductor chip includes a protection transistor and an antenna. The protection transistor is connected between a metal line having devices to be protected electrically connected...	09/30/2003
6358857	Methods of etching insulative materials, of forming electrical devices, and of forming capacitors In one aspect, the invention encompasses a method of etching insulative materials which comprise complexes of metal and oxygen. The insulative materials are exposed to physical etching conditions within a reaction chamber and in the presence of at least o...	03/19/2002
6251835	Surface planarization of high temperature superconductors Planarizing High Temperature Superconductor (HTS) surfaces, especially HTS thin film surfaces is crucial for HTS thin film device processing. Disclosed is a method of surface planarization for HTS film. The method includes first smoothing the HTS surface ...	06/26/2001
6242387	High temperature superconductor/insulator composite thin films with Josephson coupled grains High temperature superconductor composite thin film devices with easily moved Josephson vortices are described having high Tc and good magnetic vortex properties. A preferred composite material was YBCO/CeO2 thin film on a MgO substr...	06/05/2001
6066600	Method of making high-T_c SSNS and SNS Josephson junction A high temperature superconductor junction and a method of forming the junction are disclosed. The junction 40 comprises a first high-Tc superconductive layer (first base electrode layer) 46 on a substrate 42 and a dielectric layer 48 on the fi...	05/23/2000
5567330	Electrical interconnect structures and processes Electrical interconnect structures comprised of high temperature superconducting signal layers on a substrate bonded to one another or optionally to a base substructure containing power and ground planes and processes for their preparation are disclosed....	10/22/1996
5366953	Method of forming grain boundary junctions in high temperature superconductor films A novel method of producing weak-link grain boundary Josephson junctions in high temperature superconducting thin films is disclosed. These junctions are reliably and reproducibly formed on uniform planar substrates (10) by the action of a seed layer (40)...	11/22/1994
5248663	Method of forming oxide superconductor patterns A method of forming a superconductor pattern in which at lest a pair of electrodes is formed on a substrate in spaced, facing relationship nd an oxide superconductor thin film having a unit lattice which assumes a laminar structure then is formed on the s...	09/28/1993
5240905	Method for forming electrode for electrical connections to oxide super-conductor A metal electrode formed on an oxide superconductor for electric connection to the oxide superconductor, includes a first layer of Ag in direct contact with the oxide superconductor, and a second layer formed on the first layer. The second layer is formed...	08/31/1993
5219830	Process for preparing high-Tc superconducting integrated circuits A process for preparing high-Tc superconducting integrated circuits by using a method in which a thin surface layer of non-superconducting tetragonal YBa2 Cu3 Oy wafer is selectively transformed into a superconducting orthorhombic ph...	06/15/1993
5215960	Method for manufacturing oxide superconducting devices In a method of manufacturing a superconducting device which has a first thin film of oxide superconductor material formed on a substrate and a second thin film formed on the first thin film of oxide superconductor material, after the second thin film is d...	06/01/1993
5173474	Silicon substrate having an epitaxial superconducting layer thereon and method of making same An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85° K., a transition width (10-90%) of no more than 1.0° K., a resistivity at 300°...	12/22/1992
5087608	Environmental protection and patterning of superconducting perovskites A method for the passivation of superconductive rare earth cuprates involves depositing thereon a thin film of an amorphous or diamond-like carbon film of a thickness ranging from 100 Å to 10 microns. The cuprate film may be in the as-deposited form, so ...	02/11/1992
5064809	Method of making a Josephson junction with a diamond-like carbon insulating barrier A Josephson junction consisting of high temperature ceramic superconductors layers, separated by an ultra-thin insulating barrier made of an non-oxide substance like diamond-like carbon. An integral part of this disclosure is the technique involving the u...	11/12/1991
5041420	Method for making superconductor films from organometallic precursors A process is disclosed for producing superconductor films on a variety of substrates, and more particularly a patterned superconductor film on a planar substrate. The basic process includes the steps of: 1) depositing a metal film of superconductor precur...	08/20/1991
5015620	High-T_c superconductor contact unit having low interface resistivity, and method of making A high-Tc superconductor contact unit having low interface resistivity is disclosed, as is a method for making the unit. An inert metal is deposited on the surface of the superconductor, which surface is preferably non-degraded, to form a unit ...	05/14/1991
4980338	Method of producing superconducting ceramic patterns by etching Superconducting ceramic patterns are produced by dry etching. A superconducting ceramic film is deposited by plasma CVD on a semiconductor substrate which is covered with a blocking film in advance. The ceramic film is coated with a photomask followed by ...	12/25/1990
4933318	Plasma etch of masked superconductor film A method of manufacturing a thin film of an oxidic superconducting material in accordance with a pattern, in which a pattern is manufactured by means of etching using reactive ions and a mask of aluminium oxide or silicon oxide, said method enabling patte...	06/12/1990

PatentStorm

Bizarre Patents

PatentStorm News

Class 505/411 - Utilizing plasma etching or sputter etching