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| Number | Title | Issue Date |
| 7435608 | III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer A III-V group nitride system semiconductor self-standing substrate is made of III-V group nitride system semiconductor single crystal with a hexagonal crystal system crystalline structure. The substrate is provided with a surface that is off-oriented 0.09 degrees or... | 10/14/2008 |
| 7410841 | Building fully-depleted and partially-depleted transistors on same chip A method (10) of forming fully-depleted silicon-on-insulator (FD-SOI) transistors (150) and partially-depleted silicon-on-insulator (FD-SOI) transistors (152) on a semiconductor substrate (104) as part of an integrated circuit fabrication... | 08/12/2008 |
| 7410813 | Method of parallel lapping a semiconductor die In a lapping process for lapping away layers from a semiconductor device, where the region of interest is located near an edge or corner of the device, the method includes adding additional semiconductor material adjacent the region of interest. ... | 08/12/2008 |
| 7410840 | Building fully-depleted and bulk transistors on same chip A method (10) of forming fully-depleted silicon-on-insulator (FD-SOI) transistors (150) and bulk transistors (152) on a semiconductor substrate (104) as part of an integrated circuit fabrication process is disclosed. ... | 08/12/2008 |
| 7387912 | Packaging of electronic chips with air-bridge structures A circuit assembly for fabricating an air bridge structure and a method of fabricating an integrated circuit package capable of supporting a circuit assembly including an air bridge structure. A circuit assembly comprises an electronic chip and a conductive structur... | 06/17/2008 |
| 7368310 | Light generating semiconductor device and method of making the same In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor f... | 05/06/2008 |
| 7361519 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a ... | 04/22/2008 |
| 7358593 | Microfabricated miniature grids A grid structure and method for manufacturing the same. The grid is used for gating a stream of charged particles in certain types of particle measurement instruments, such as ion mobility spectrometers and the like. The methods include various microfabrication tech... | 04/15/2008 |
| 7354798 | Three-dimensional device fabrication method A method is described for fabricating a three-dimensional integrated device including a plurality of vertically stacked and interconnected wafers. Wafers (1, 2, 3) are bonded together using bonding layers (26, 36) of thermoplastic material such as poly... | 04/08/2008 |
| 7351300 | Peeling method and method of manufacturing semiconductor device There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for... | 04/01/2008 |
| 7348261 | Wafer scale thin film package A chip module having a chip with a flexible multilayer redistribution thin film attached thereto for connection to a substrate. The thin film acts as both a redistribution medium with multiple layers of redistribution metallurgy for chip power and signals and as a c... | 03/25/2008 |
| 7344936 | Semiconductor wafer with a wiring structure, a semiconductor component, and methods for their production A semiconductor wafer is provided with a wiring structure, and semiconductor chip positions arranged in rows and columns. The semiconductor wafer has at least one coating (6) as a self-supporting dimensionally stable substrate layer (4), and/or as a wi... | 03/18/2008 |
| 7335575 | Semiconductor constructions and semiconductor device fabrication methods A method of fabricating a semiconductor device includes etching a substrate to form a recess, the substrate being formed on a backside of a semiconductor wafer, forming pores in the substrate in an area of the recess, and forming in the recess a material having a th... | 02/26/2008 |
| 7335578 | Method for manufacturing semiconductor chip A semiconductor wafer (W) where circuits are formed in the area divided by streets is split into semiconductor chips having individual circuits. By interposing an adhesive sheet, whose adhesive force is lowered by stimulation, between the semiconductor wafer (W) and... | 02/26/2008 |
| 7332413 | Semiconductor wafers including one or more reinforcement structures and methods of forming the same Methods of forming semiconductor devices include thinning a region of a semiconductor wafer and forming at least one semiconductor die laterally within a thinned region of the wafer. One or more reinforcement structures may be defined on the wafer. Semiconductor waf... | 02/19/2008 |
| 7314767 | Method for local wafer thinning and reinforcement A method is provided for preparing a semiconductor wafer for testing. The method includes selecting a die to be tested; measuring a diagonal of the die; thinning an area over the die extending beyond the scribe lines, the thinned area may be a circular area having a... | 01/01/2008 |
| 7309620 | Use of sacrificial layers in the manufacture of high performance systems on tailored substrates The invention relates to methods for preparing a removable system on a mother substrate. The method deposits a high surface to volume sacrificial layer on a mother substrate and stabilizes the sacrificial layer by a) removing volatile chemical species in and on the ... | 12/18/2007 |
| 7300823 | Apparatus for housing a micromechanical structure and method for producing the same Apparatus for housing a micromechanical structure, and a method for producing the housing. The apparatus has a substrate having a main side on which the micromechanical structure is formed, a photo-resist material structure surrounding the micromechanical structure ... | 11/27/2007 |
| 7288471 | Bumping electronic components using transfer substrates A method for forming solder bumps on an electronic component. Providing a transfer substrate having a plurality of solder balls, disposing the transfer substrate on the surface of the electronic component, heating to reflow the solder balls onto the electronic compo... | 10/30/2007 |
| 7285471 | Process for transfer of a thin layer formed in a substrate with vacancy clusters Processes for forming semiconductor structure comprising a transfer layer transferred from a donor substrate are provided in which the resulting structure has improved quality with respect to defects and resulting structures therefrom. For example, a semiconductor o... | 10/23/2007 |
| 7279402 | Method for fabricating a semiconductor device A method of fabricating a semiconductor device includes the steps of, after sawing a semiconductor substrate into individual semiconductor chips in a state that the semiconductor substrate is covered by an adhesive tape, applying a dry gas to the adhesive tape in a ... | 10/09/2007 |
| 7279400 | Method of fabricating single-layer and multi-layer single crystalline silicon and silicon devices on plastic using sacrificial glass A method of fabricating a silicon-on-plastic layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; depositing a layer of silicon; implanting splitting hydrogen ions into the silicon substrate; bonding a glass substrate to the silicon l... | 10/09/2007 |
| 7279751 | Semiconductor laser device and manufacturing method thereof It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate... | 10/09/2007 |
| 7265030 | Method of fabricating silicon on glass via layer transfer A method of fabricating a silicon-on-glass layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; relaxing the SiGe layer; depositing a layer of silicon on the relaxed SiGe layer; implanting hydrogen ions in a second hydrogen implantati... | 09/04/2007 |
| 7253083 | Method of thinning a semiconductor structure First and second semiconductor wafers are bonded together, with at least one of the wafers having a first layer of silicon, an intermediate oxide layer and a second layer of silicon. The first silicon layer is initially mechanically reduced by around 80% to 90% of i... | 08/07/2007 |
| 7250325 | Image sensor with deep well region and method of fabricating the image sensor An imager, an image sensor included in the imager and a method of fabricating the image sensor are provided. The image sensor having a substrate with front and back sides to produce image data, includes a transparent conductive coating arranged on the back side of t... | 07/31/2007 |
| 7244663 | Wafer reinforcement structure and methods of fabrication A method of fabricating a thinned, reinforced semiconductor wafer is disclosed. Particularly, a semiconductor wafer may be provided and a plurality of separate semiconductor dice may be formed upon a surface thereof. At least one region of the semiconductor wafer ma... | 07/17/2007 |
| 7205211 | Method for handling semiconductor layers in such a way as to thin same This invention relates to a method for making a thin layer starting from a wafer comprising a front face with a given relief, and a back face, comprising steps consisting of: a) obtaining a support handle with a face acting as a bo... | 04/17/2007 |
| 7195988 | Semiconductor wafer and method of manufacturing a semiconductor device using a separation portion on a peripheral area of the semiconductor wafer A conveyance system for a semiconductor wafer can be used without any change before and after a support plate is adhered to the wafer. Also, the finish accuracy of the wafer and the positioning accuracy between the wafer and the support plate can be relaxed, thus im... | 03/27/2007 |
| 7189599 | Lead frame, semiconductor device using the same and method of producing the semiconductor device A lead frame of the present invention includes a pair of base portions having a substantially flat bottom each. An island portion and electrode portions are partly connected to the tops of the base portions. The lead frame needs a minimum of production cost and prom... | 03/13/2007 |
| 7176554 | Methods for producing a semiconductor entity A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor substrate includes a bonding interface. A receiver substrate is also ... | 02/13/2007 |
| 7176102 | Method for producing SOI wafer and SOI wafer A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the m... | 02/13/2007 |
| 7169684 | Device having inductors and capacitors and a fabrication method thereof An LC device having a substrate, a support layer having upper and lower sides formed on the substrate, inductors formed on either the upper or lower side of the support layer, and capacitors formed in the opposite side of the support layer. The support layer may be ... | 01/30/2007 |
| 7163895 | Polishing method The present invention is relates to a polishing method for polishing a semiconductor wafer (W) by pressing the semiconductor wafer (W) against a polishing surface (10) with use of a top ring (23) for holding the semiconductor wafer (W). A pressure cham... | 01/16/2007 |
| 7160808 | Chuck for supporting wafers with a fluid A method of relieving surface stress on a thin wafer by removing a small portion of the wafer substrate, the substrate being removed by applying a warm solution of KOH to the backside of the wafer while the wafer spins. The wafer may be supported on a rotatable plat... | 01/09/2007 |
| 7129172 | Bonded wafer processing method According to one embodiment a method is disclosed. The method includes applying a photoresist layer to a first wafer, etching the first wafer, bonding the first wafer to a second wafer and thinning the first wafer; wherein an unsupported bevel portion of the first w... | 10/31/2006 |
| 7118930 | Method for manufacturing a light emitting device A method for manufacturing a light emitting device includes (a) preparing a semiconductor element formed with a crystalline substrate, and a temporary element, the temporary element including a laser-transmissive substrate and a laser-dissociable layer formed on the... | 10/10/2006 |
| 7115481 | Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate A method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate. The method includes providing an initial structure that includes a useful layer having a front face on a support substrate. At... | 10/03/2006 |
| 7112514 | SOI substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the SOI substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus An SOI (Silicon On Insulator) substrate is provided with: a support substrate (201); a single crystal silicon layer (202) disposed above one surface of the support substrate; an insulation portion (205) disposed between the support substrate and... | 09/26/2006 |
| 7098143 | Etching method using an at least semi-solid media An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove meta... | 08/29/2006 |
