Did You Know...
...that one person who claimed to be the inventor of the television is Russian emigre Vladimir Zworykin? In 1929 David Sarnoff, founder of RCA, asked Zworykin what it would take to develop TV for commercial use. He said: a year and a half and $100,000. In reality, it took 20 years and $50 million! Before his death in 1982 at the age of 92, Zworykin said of his invention: "The technique is wonderful. It is beyond my expectations. But the programs! I would never let my children even come close to this thing."
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| Number | Title | Issue Date |
| 6849466 | Method for manufacturing MTJ cell of magnetic random access memory A method for fabricating a MTJ cell of a magnetic random access memory (MRAM) using a semiconductor film as a tunnel barrier layer is disclosed. The method comprises the steps of: forming a pinned ferromagnetic layer on a connection layer; forming a tunnel barrier l... | 02/01/2005 |
| 6528430 | Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3 An atomic layer deposition (ALD) method employing Si2 Cl6 and NH3, or Si2 Cl6 and activated NH3 as reactants. In one embodiment, the invention includes the steps of (a) placing a substrate ... | 03/04/2003 |
| 6274429 | Use of Si-rich oxide film as a chemical potential barrier for controlled oxidation An oxidation process for reducing the data retention loss (DRL) in a FAMOS device comprising the steps of (1) low temperature deposition of a silicon-enriched silicon oxide (130) over a FAMOS transistor gate stack (116) and (2) annealing said silicon-enri... | 08/14/2001 |
| 6043141 | Method for in situ growth of p-type doped group II-VI semiconductor films A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material wherein a cation-rich condition is established at a surface of the lattice. The method further... | 03/28/2000 |
| 5933751 | Method for the heat treatment of II-VI semiconductors An object of the invention is to provide a method for the heat treatment of II-VI semiconductors such as ZnS, ZnSx Se1-x, Zny Cd1-y Se, etc. to dope with Group III elements as a donor impurity to reduce its resi... | 08/03/1999 |
| 5599733 | Method using cadmium-rich CdTe for lowering the metal vacancy concentrations of HgCdTe surfaces A hybrid focal plane array has p-n junction photodiodes formed in a substrate (10) of HgCdTe which is passivated by a cap layer (12) of Cd-rich CdTe. The active surface of the HgCdTe substrate is passivated by annealing at a temperature sufficient to supp... | 02/04/1997 |
| 5578503 | Rapid process for producing a chalcopyrite semiconductor on a substrate To produce a polycrystalline, single-phase compound semiconductor layer of the chalcopyrite type ABC2, it is proposed to deposit, on a substrate, a layer structure which comprises a plurality of layers and which contains the components in eleme... | 11/26/1996 |
| 5451552 | Method for improvement of optical quality and reduction of background doping in gainSB/INAS superlattices Post-growth annealing of GaInSb/InAs superlattices at about 400° to 650° C. in an antimony flux followed by cooling results in enhanced optical properties as determined by photoluminescence and in reduced background doping levels as determined by Hall m... | 09/19/1995 |
| 5416030 | Method of reducing leakage current in an integrated circuit A method is provided for reducing leakage current in an integrated circuit (24). A first doped region (18) having a first conductivity type is formed in a semiconductor layer (10) having a second conductivity type, such that a second doped region (20) hav... | 05/16/1995 |
| 5411914 | III-V based integrated circuits having low temperature growth buffer or passivation layers A new III-V buffer or passivation material is described which is produced by low temperature growth (LTG) of III-V compounds. The material has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconduct... | 05/02/1995 |
| 5399503 | Method for growing a HgCdTe epitaxial layer on a semiconductor substrate A method for growing an epitaxial layer of a group II-VI tenary or quaternary compound on a substrate. In particular a HgCdTe semiconductor layer is grown on a substrate such as sapphire which does not interdiffuse with the materials in the semiconductor ... | 03/21/1995 |
| 5378652 | Method of making a through hole in multi-layer insulating films A semiconductor device with an electrode wiring structure comprises at least one diffused region provided in a semiconductor substrate, a silicon oxide layer covering the substrate surface, a silicon nitride layer provided on the silicon oxide layer, a th... | 01/03/1995 |
| 5318666 | Method for via formation and type conversion in group II and group VI materials A method of forming an n-p junction in a body (44, 44a, 44b) formed of Group II and Group VI elements. The body (44, 44a, 44b) initially is of p-type conductivity characteristic, and a dry reactive etching process is employed for forming a via (60, 60a, 6... | 06/07/1994 |
| 5198370 | Method for producing an infrared detector In a method of producing an infrared detector, a first conductivity type semiconductor layer, in which lattice vacancies acting as first conductivity type carriers are formed by evaporation of an element during annealing, is formed on a substrate and dopa... | 03/30/1993 |
| 5137847 | Method of producing GaAs single crystal substrate using three stage annealing and interstage etching A method of producing a GaAs single crystal substrate comprises the steps of conducting a first-stage annealing by vacuum-sealing a GaAs single crystal wafer and arsenic in a heat-resistant vessel and heating the wafer to a temperature of 1050° to 1150°... | 08/11/1992 |
| 5098858 | Junction between metal and zincblende-type III-V compound semiconductor and manufacturing method thereof The method of manufacturing the metal-semiconductor junction in accordance with the present invention includes the step of forming a 2×2 surface superstructure in an ultrahigh vacuum by removing an oxide layer by means of a heat cleaning at temperatures ... | 03/24/1992 |
| 5028296 | Annealing method A three step annealing treatment for Hg1-x Cdx Te includes a high temperature anneal to reduce excess tellurium, followed by an intermediate temperature anneal to reduce the supersaturation of metal vacancies, and lastly a low temper... | 07/02/1991 |
| 5028561 | Method of growing p-type group II-VI material P-type doping of a molecular beam epitaxy (MBE) grown substrate composed of a Group II-VI combination is accomplished by forming a flux from a Group II-V combination, and applying the flux to the substrate at a pressure less than about 10-6 atm... | 07/02/1991 |
| 4917757 | Method of performing solution growth of ZnSe crystals In a method of performing a solution growth of a ZnSe crystal using Se as a solvent and relying on the temperature difference technique, the growth is performed under the conditions that the vapor pressure of Zn which is lower than the vapor pressure of S... | 04/17/1990 |
| 4874438 | Intermetallic compound semiconductor thin film and method of manufacturing same An intermetallic compound semiconductor thin film comprises a single crystalline deposition thin film made of a III-V group intermetallic compound having a stoichiometry composition ratio of 1:1. When forming the III-V group semiconductor thin film by an ... | 10/17/1989 |
| 4846926 | HcCdTe epitaxially grown on crystalline support A layer of HgCdTe (15) epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe s... | 07/11/1989 |
| 4755856 | Znse green light emitting diode A green color light emitting ZnSe diode having a pn junction is fabricated by the use of a ZnSe crystal having a good crystal perfection and being obtained by a solution growth method relying on the temperature difference technique using a solvent contain... | 07/05/1988 |
| 4570328 | Method of producing titanium nitride MOS device gate electrode An MOS device having a gate electrode and interconnect of titanium nitride and especially titanium nitride which is formed by low pressure chemical vapor deposition. In a more specific embodiment the titanium nitride gate electrode and interconnect have a... | 02/18/1986 |
| 4481044 | High-temperature Hg anneal for HgCdTe The dislocation density near the surface of Hg1-x Cdx Te alloys is substantially reduced by annealing the material at around 600° C. in a mercury saturated ambient for periods of four hours or more, prior to post annealing at lower ... | 11/06/1984 |
| 4443930 | Manufacturing method of silicide gates and interconnects for integrated circuits A method of forming on a substrate a layer of silicon-rich metal silicide such as tungsten silicide, WSix where x>2 by cosputtering a tungsten disilicide (WSi2) target and a doped silicon target on to the substrate which is maintaine... | 04/24/1984 |
| 4411732 | Method of manufacturing a detector device In the manufacture of an infrared radiation detector device, a body of p-type cadmium mercury telluride is bombarded with ions to etch away a part of the body. From the etched-away part of the body an excess concentration of mercury is produced which acts... | 10/25/1983 |
| 4389256 | Method of manufacturing pn junction in group II-VI compound semiconductor A method of manufacturing a pn junction in a substantially n-type ZnSe compound semiconductor crystal grown by relying on a liquid growth method using temperature difference technique, by diffusing therein gold which is a p-type impurity or by forming the... | 06/21/1983 |
| 4366009 | Method of manufacturing semiconductor structures by epitaxial growth from the liquid phase In manufacturing a semiconductor device by epitaxial growth from the liquid phase on a substrate of layers of gallium arsenide or gallium aluminum arsenide doped with elements such as germanium, the last growth melt is wiped off and the structure is coole... | 12/28/1982 |
| 4315477 | Semi-open liquid phase epitaxial growth system Disclosed is a semi-open method of growing an epitaxial HgCdTe layer on a CdTe substrate, including the steps of placing the CdTe substrate and a growth solution of Hg, Cd, and Te within a pressure and temperature controlled container, flowing an inert ga... | 02/16/1982 |
| 4281029 | Method of coating with a stoichiometric compound A method of coating which comprises the steps of separately vaporizing a plurality of substances containing the component elements of a desired compound and placed in a plurality of crucibles to form vapors of the substances, mixing the vapors in a heated... | 07/28/1981 |
| 4227962 | Prevention of decomposition of phosphorous containing substrates during an epitaxial growth sequence Loss of phosphorous from a phosphorous containing substrate is eliminated by maintaining a partial pressure of phosphorous in the vicinity of the substrate higher than the inherent partial pressure of phosphorous over the material of the substrate. The hi... | 10/14/1980 |
| 4190486 | Method for obtaining optically clear, high resistivity II-VI, III-V, and IV-VI compounds by heat treatment Desired conductivity type and carrier concentration in the Group II-VI, III-V, and IV-VI compounds in which at least one constituent is volatile is obtained by varying the partial pressure of one of the volatile constituents with respect to the compound s... | 02/26/1980 |
| 4177298 | Method for producing an InSb thin film element A method for producing an InSb thin film element comprising the steps of forming an InSb polycrystalline thin film on a substrate, melting and recrystallizing the InSb polycrystalline thin film at a temperature above the melting point of InSb, and disposi... | 12/04/1979 |
| 4116725 | Heat treatment of cadmium mercury telluride and product A method of improving certain characteristics of cadmium mercury telluride single crystal material by heat treating the single crystal material in the presence of both tellurium and mercury.... | 09/26/1978 |
| 4105477 | Doping of (Hg,Cd)Te with a Group VA element Mercury cadmium telluride having a quantity of an acceptor material selected from Group VA of the Periodic Table, consisting of nitrogen, phosphorus, arsenic and antimony and bismuth dispersed therein, preferably in an amount sufficient to measurably incr... | 08/08/1978 |
| 4105479 | Preparation of halogen doped mercury cadmium telluride Mercury cadmium telluride is disclosed having a quantity of a halogen donor material preferably selected from the group consisting of bromine and iodine dispersed therein in an amount sufficient to measurably increase the donor concentration. Also disclos... | 08/08/1978 |
| 4089714 | Doping mercury cadmium telluride with aluminum or silicon A method of adjusting the donor concentration in a body of mercury cadmium telluride, or in regions of a body, comprising the steps of contacting the donor material region with a donor material of either aluminum or silicon and heating the body at a tempe... | 05/16/1978 |
| 4058430 | Method for producing compound thin films A method is provided for growing highly oriented compound thin films on a substrate by subjecting the substrate to the vapor of a first single element which can react with the surface at a temperature sufficiently high for the reaction to occur which form... | 11/15/1977 |
| 4028145 | Stoichiometric annealing of mercury cadmium telluride The stoichiometry and free-carrier concentration of mercury cadmium telluride is adjusted by annealing the mercury cadmium telluride in the presence of cadmium vapor.... | 06/07/1977 |
| 4026741 | Technique for preparation of stoichiometric III-V compound semiconductor surfaces A technique for preparing stoichiometric group III-V compound semiconductor surfaces involves a repetitive anodizing and etching sequence in an aqueous solution of appropriate pH and a basic solution, respectively. Surfaces treated in the described manner... | 05/31/1977 |
