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| Number | Title | Issue Date |
| 7348226 | Method of forming lattice-matched structure on silicon and structure formed thereby A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an amorphous semiconductor layer on the oxide by one of evaporation and chemical vapor deposition (CVD). ... | 03/25/2008 |
| 7294536 | Process for manufacturing an SOI wafer by annealing and oxidation of buried channels A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.... | 11/13/2007 |
| 7265029 | Fabrication of substrates with a useful layer of monocrystalline semiconductor material Methods for fabricating a semiconductor substrate. In an embodiment, the technique includes providing an intermediate support, providing a nucleation layer, and providing at least one bonding layer between the intermediate support and the nucleation layer to improve... | 09/04/2007 |
| 7253524 | Copper interconnects A semiconductor substrate has a first copper layer, on which an etch stop layer and a dielectric layer are successively formed. A second copper layer penetrates the dielectric layer and the etch stop layer to electrically connect to the first metal layer. The etch s... | 08/07/2007 |
| 7253081 | Surface finishing of SOI substrates using an EPI process A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has a distribu... | 08/07/2007 |
| 7185417 | Method for shaping an air bearing surface of a magnetic head slider A method for shaping an ABS of a magnetic head slider including a step of holding at least one row bar with a plurality of aligned thin-film magnetic head elements by adhering a first surface of the at least one row bar to an adhesive or UV tape capable of passing a... | 03/06/2007 |
| 7172930 | Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer A cost efficient and manufacturable method of fabricating strained semiconductor-on-insulator (SSOI) substrates is provided that avoids wafer bonding. The method includes growing various epitaxial semiconductor layers on a substrate, wherein at least one of the semi... | 02/06/2007 |
| 7109130 | Zeolite films for low k applications A method is provided for making an integrated circuit dielectric. A structure-directing agent (SDA) is provided. Preferably this structure-directing agent is a salt of a polycyclic organic compound. By use of the structure-directing agent, a film of a zeolite having... | 09/19/2006 |
| 7067400 | Method for preventing sidewall consumption during oxidation of SGOI islands A method of forming a substantially relaxed SiGe-on-insulator substrate in which the consumption of the sidewalls of SiGe-containing island structures during a high temperature relaxation annealing is substantially prevented or eliminated is provided. The method ser... | 06/27/2006 |
| 7018912 | Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into... | 03/28/2006 |
| 6946369 | Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric material The invention concerns a method for forming nanostructures of semi-conductor material on a substrate of dielectric material by chemical vapour deposition (CVD). Said method comprises the following steps: a step of forming on the su... | 09/20/2005 |
| 6911376 | Selective heating using flash anneal A process, which includes implanting hydrogen ions into a silicon substrate, overlaying the silicon substrate on to a support substrate, and applying a flash anneal heat treatment to the silicon and support substrates to cause the silicon substrates to separate at a... | 06/28/2005 |
| 6865798 | Method for shaping air bearing surface of magnetic head slider A method for shaping an ABS of a magnetic head slider including a step of holding at least one row bar with a plurality of aligned thin-film magnetic head elements by adhering a first surface of the at least one row bar to an adhesive or UV tape capable of passing a... | 03/15/2005 |
| 6743651 | Method of forming a SiGe-on-insulator substrate using separation by implantation of oxygen A method of fabricating high-quality, substantially relaxed SiGe-on-insulator substrate is provided by implanting oxygen into a Si/SiGe multilayer heterostructure which comprises alternating Si and SiGe layers. Specifically, the high quality, relaxed SiGe-on-insulat... | 06/01/2004 |
| 6558994 | Dual silicon-on-insulator device wafer die A silicon-on-insulator semiconductor device and manufacturing method therefor is provided in which a single wafer die contains a transistor over an insulator layer to form a fully depleted silicon-on-insulator device and a transistor formed in a semicondu... | 05/06/2003 |
| 6498371 | Body-tied-to-body SOI CMOS inverter circuit An SOI CMOS inverter circuit in which a silicide layer in combination with body tie regions tie a p-type body region and an n-type body region together. At the same time, however, the body regions remain floating electrically so that the benefits of SOI a... | 12/24/2002 |
| 6429099 | Implementing contacts for bodies of semiconductor-on-insulator transistors A method and semiconductor structure are provided for implementing body contacts for semiconductor-on-insulator transistors. A bulk semiconductor substrate is provided. A mask is applied to the bulk semiconductor substrate to block an insulating implant l... | 08/06/2002 |
| 6417075 | Method for producing thin substrate layers The present invention relates to a method of producing very thin substrate layers, particularly thin semiconductor areas, which may comprise integrated circuits. In the method two substrates (1, 2) are bonded by their faces via one or several intermediate... | 07/09/2002 |
| 6403447 | Reduced substrate capacitance high performance SOI process A method for forming a semiconductor substrate is provided including the general sequential steps of: providing a handle wafer and a device wafer; implanting at least a first impurity region in a first surface of the device wafer; bonding the first surfac... | 06/11/2002 |
| 6403388 | Nanomachining method for integrated circuits A system and method provides for effective analysis of an integrated circuit having silicon on insulator (SOI) structure. According to one example embodiment of the present invention, the system includes a system (e.g., a nanomachining arrangement) adapte... | 06/11/2002 |
| 6383924 | Method of forming buried conductor patterns by surface transformation of empty spaces in solid state materials A plurality of buried conductors and/or buried plate patterns formed within a monocrystalline substrate is disclosed. A plurality of empty-spaced buried patterns are formed by drilling holes in the monocrystalline substrate and annealing the monocrystalli... | 05/07/2002 |
| 6287941 | Surface finishing of SOI substrates using an EPI process A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has... | 09/11/2001 |
| 6235611 | Method for making silicon-on-sapphire transducers An improved method for making silicon-on-sapphire transducers including the steps of: forming a first silicon layer on a first side of a first sapphire wafer; bonding a second sapphire wafer to the first side of the first sapphire wafer such that the firs... | 05/22/2001 |
| 6150197 | Method of fabricating heterolithic microwave integrated circuits A process for fabricating heterolithic microwave integrated circuits. According to one exemplary embodiment, a glass substrate is fused to a silicon wafer, and the silicon wafer is etched to effect silicon pedestals. A glass layer is fused onto and about ... | 11/21/2000 |
| 6136666 | Method for fabricating silicon-on-insulator wafer Disclosed is a method for fabricating a silicon-on-insulator wafer, particularly to a cost reductive method.... | 10/24/2000 |
| 6127244 | Method of manufacturing semiconductor device A method of fabricating a SOI wafer using an isolation film as a polishing stopper, comprising the steps of: preparing a first and a second silicon substrates; implanting impurities into selected active regions of the first silicon substrate to a desired ... | 10/03/2000 |
| 6100106 | Fabrication of nitride semiconductor light-emitting device A process for producing a semiconductor light-emitting device, which comprises forming, on a substrate by crystal growth, a gallium nitride type compound semiconductor layer having a crystal face (0,0,0,1) which can be utilized as the end surface of an op... | 08/08/2000 |
| 6033490 | Growth of GaN layers on quartz substrates In a method of manufacturing a semiconductor device which includes a quartz substrate having a z-cut plane of (0001) plane on a surface, a GaN film is first deposited on the surface. Finally, the quartz substrate is removed from the GaN film. The removed ... | 03/07/2000 |
| 5985687 | Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials Optically flat cleaved facet mirrors are fabricated in GaN epitaxial films grown on sapphire by wafer fusing a GaN film with a sapphire substrate to a cubic substrate such as an InP or GaAs substrate. The sapphire substrate may then partially or entirely ... | 11/16/1999 |
| 5985728 | Silicon on insulator process with recovery of a device layer from an etch stop layer A silicon on insulator (SOI) process is disclosed which includes the steps of forming an etch stop layer in a starting wafer, forming an insulating layer on the etch stop layer, bonding this wafer to a handle wafer, thinning the start wafer down to the et... | 11/16/1999 |
| 5932048 | Method of fabricating direct-bonded semiconductor wafers A method of direct-bonding semiconductor wafers limits the time interval between a bonding step and a bonding anneal step or performs a baking step between the bonding and bonding anneal steps at a predetermined temperature for a predetermined time interv... | 08/03/1999 |
| 5879960 | Manufacturing method of thin film diode for liquid crystal display device A thin film diode (8) between a data line (12) and a drive electrode (13), which is free from breakage in an upper layer film (4), is formed on one inner surface of a glass substrate (1) sealing a liquid crystal of a liquid crystal display device. To form... | 03/09/1999 |
| 5879970 | Process of growing polycrystalline silicon-germanium alloy having large silicon content Polycrystalline silicon-germanium alloy is grown on a glass substrate through a chemical vapor deposition under the conditions where the substrate temperature ranges from 350 degrees to 450 degrees in centigrade, the ratio between gas flow rate of Si... | 03/09/1999 |
| 5840593 | Membrane dielectric isolation IC fabrication General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a sem... | 11/24/1998 |
| 5776803 | Manufacture of electronic devices comprising thin-film circuitry on a polymer substrate A method of manufacturing a large-area electronic device such as a flat panel display, which method includes subjecting a semiconductor film on a polymer substrate to an energy beam treatment, e.g., for crystal growth or to anneal an ion implant, and mask... | 07/07/1998 |
| 5741724 | Method of growing gallium nitride on a spinel substrate A method of growing gallium nitride on a spinel substrate by providing a supporting substrate having a surface, and disposing a plurality of buffer layers on the surface of the supporting substrate. The plurality of buffer layers including a first buffer ... | 04/21/1998 |
| 5736439 | Method for forming a semiconductor device in which the insulating layer is heated to contract after crystallization of the semiconductor layer A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor... | 04/07/1998 |
| 5733641 | Buffered substrate for semiconductor devices The invention provides a buffered substrate that includes a substrate, a buffer layer and a silicon layer. The buffer layer is disposed between the substrate and the silicon layer. The buffer layer has a melting point higher than a melting point of the su... | 03/31/1998 |
| 5686320 | Method for forming semiconductor layer of thin film transistor by using temperature difference The present invention relates to a method for manufacturing a thin film transistor which can improve the yield, characteristics and reliability of the thin film transistor by selectively forming a semiconductor layer on a desired portion of a substrate us... | 11/11/1997 |
| 5686350 | Method for fabricating defect-free compound semiconductor thin film on dielectric thin film A method for fabricating a defect-free compound semiconductor thin film on a dielectric thin film which oxidizes multi-semiconductor layers consisting of a hetero compound semiconductor thin film made of one of GaAs, InGaAs or InAs over a thin film contai... | 11/11/1997 |
