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| Number | Title | Issue Date |
| 7414297 | Capacitor constructions The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is form... | 08/19/2008 |
| 7338855 | Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided, wherein a large MIM capacitor including an uneven surface if formed to increase capacitance. The method includes forming a polysilicon layer on a lower metal layer by plasma-enhanced chemical vapor deposit... | 03/04/2008 |
| 7274059 | Capacitor constructions The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is form... | 09/25/2007 |
| 7253104 | Methods of forming particle-containing materials The invention includes methods of forming particle-containing materials, and also includes semiconductor constructions comprising particle-containing materials. One aspect of the invention includes a method in which a first monolayer is formed across at least a port... | 08/07/2007 |
| 7169620 | Method of reducing the surface roughness of spin coated polymer films According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer ... | 01/30/2007 |
| 7160744 | Fabrication method of light emitting diode incorporating substrate surface treatment by laser and light emitting diode fabricated thereby The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to a... | 01/09/2007 |
| 7112503 | Enhanced surface area capacitor fabrication methods A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode a... | 09/26/2006 |
| 7081384 | Method of forming a silicon dioxide layer The present invention refers to a method of forming a silicon dioxide layer by thermally oxidizing at least one monocrystalline silicon surface region on a semiconductor substrate. The silicon surface region has a curved surface. The method can include providing a s... | 07/25/2006 |
| 7071508 | Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped ... | 07/04/2006 |
| 7071129 | Enhancing adhesion of silicon nitride films to carbon-containing oxide films Adhesion between silicon nitride etch-stop layers and carbon doped oxide films may be improved by using plasma argon densification treatments of the carbon doped oxide films. The resulting surface layer of the carbon doped oxide films may be carbon-depleted and may ... | 07/04/2006 |
| 7060615 | Methods of forming roughened layers of platinum A method of forming a roughened layer of platinum, including: a) providing a substrate within a reaction chamber; b) forming an adhesion layer over the substrate; c) flowing an oxidizing gas into the reaction chamber; d) flowing a platinum precursor into the reactio... | 06/13/2006 |
| 6949427 | Methods of forming a capacitor structure The invention includes a method of forming a capacitor electrode. A sacrificial material sidewall is provided to extend at least partially around an opening. A first silicon-containing material is formed within the opening to partially fill the opening, and is doped... | 09/27/2005 |
| 6943089 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus A hemispherical grain (HSG) formation process for enlarging the surface area of a capacitor electrode, wherein stable, defect-free HSG, having outstanding selectivity, is formed. An amorphous silicon layer, which constitutes a capacitor electrode, is formed on an Si... | 09/13/2005 |
| 6916723 | Methods of forming rugged semiconductor-containing surfaces The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is ... | 07/12/2005 |
| 6905984 | MEMS based contact conductivity electrostatic chuck The present invention is directed to a method for clamping and processing a semiconductor substrate using a semiconductor processing apparatus. According to one aspect of the present invention, a multi-polar electrostatic chuck and associated method is disclosed whi... | 06/14/2005 |
| 6887755 | Methods of forming rugged silicon-containing surfaces The invention encompasses a method of forming a rugged silicone-containing surface. A layer comprising amorphous silicon is provided within a reaction chamber at a first temperature. The temperature is increased to a second temperature at least 40° C. higher than t... | 05/03/2005 |
| 6884691 | Method of forming a substrate having a surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms The invention includes methods of forming a substrate having a surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms. In one implementation, a substrate is provided which has a first substrate surface comprising at least o... | 04/26/2005 |
| 6864138 | Methods of forming capacitor structures and DRAM arrays The invention encompasses DRAM constructions, capacitor constructions, integrated circuitry, and methods of forming DRAM constructions, integrated circuitry and capacitor constructions. The invention encompasses a method of forming a capacitor wherein: a) a first la... | 03/08/2005 |
| 6855596 | Method for manufacturing a trench capacitor having an isolation trench A method for manufacturing a trench capacitor includes the step of etching a shallow isolation trench in a two-step process flow. During a first etching step, an etch chemistry based on chlorine or bromine performs a highly selective etch for silicon. During a secon... | 02/15/2005 |
| 6815309 | Support-integrated donor wafers for repeated thin donor layer separation Processes that may be used in producing electronic, opotoelectronic, or optical components may be provided. The processes may involve preparing a reusable donor wafer for donating a thin layer of semiconductor material by assembling a donor layer of a semiconductor ... | 11/09/2004 |
| 6808983 | Silicon nanocrystal capacitor and process for forming same A storage capacitor plate for a semiconductor assembly comprising a substantially continuous porous conductive storage plate comprising silicon nanocrystals residing along a surface of a conductive material and along a surface of a coplanar insulative material adjac... | 10/26/2004 |
| 6790779 | Anisotropic dry etching technique for deep bulk silicon etching A method for creating deep features in a Si-containing substrate for use in fabricating MEMS type devices is provided. The method includes first forming a thin Ni hardmask on a surface of a Si-containing substrate. The Ni hardmask is patterned using conventional pho... | 09/14/2004 |
| 6774040 | Apparatus and method for surface finishing a silicon film A method of treating a silicon surface of a substrate that includes heating the substrate in a process chamber to a temperature, exposing a first area adjacent to the silicon surface to a first gas mixture comprising an etchant, a silicon source gas, and a carrier, ... | 08/10/2004 |
| 6756267 | Method of manufacturing a semiconductor device including a capacitor with a roughened-surface electrode A method of manufacturing a semiconductor device is provided. A polysilicon film and a rough-surfaced polysilicon film are formed on inter-layer insulating film including side and bottom surfaces of openings formed in inter-layer insulating film. A photoresist is fo... | 06/29/2004 |
| 6709947 | Method of area enhancement in capacitor plates A method and structure for increasing the area and capacitance of both trench and planar integrated circuit capacitors uses Si nodules deposited on a thin dielectric seeding layer that is absorbed during subsequent thermal processing, thereby avoiding a high resista... | 03/23/2004 |
| 6699752 | Formation of conductive rugged silicon The present invention provides methods of forming in situ doped rugged silicon and semiconductor devices incorporating conductive rugged silicon. In one aspect, the methods involve forming a layer of amorphous silicon on a substrate at a substantially con... | 03/02/2004 |
| 6699745 | Capacitor and memory structure and method A rugged polysilicon electrode for a capacitor has high surface area enhancement with a thin layer by high nucleation density plus gas phase doping which also enhances grain shape and oxygen-free dielectric formation.... | 03/02/2004 |
| 6686225 | Method of separating semiconductor dies from a wafer Methods are disclosed for manufacturing semiconductor device dies and for separating dies from a semiconductor wafer, wherein one or more channels are etched in the top of the wafer between individual die areas. Material is then removed from the bottom si... | 02/03/2004 |
| 6673673 | Method for manufacturing a semiconductor device having hemispherical grains An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being differen... | 01/06/2004 |
| 6649478 | Semiconductor device and method of manufacturing same A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconduc... | 11/18/2003 |
| 6649440 | Aluminum indium gallium nitride-based LED having thick epitaxial layer for improved light extraction A light-emitting diode (LED) and a method of making the device utilize a thick multi-layered epitaxial structure that increases the light extraction efficiency of the device. The LED is an aluminum-gallium-indium-nitride (AlGaInN)-based LED. The thick ... | 11/18/2003 |
| 6624069 | Methods of forming integrated circuit capacitors having doped HSG electrodes Methods of forming integrated circuit capacitors include the steps of forming a lower electrode of a capacitor by forming a conductive layer pattern (e.g., silicon layer) on a semiconductor substrate and then forming a hemispherical grain (HSG) silicon su... | 09/23/2003 |
| 6620675 | Increased capacitance trench capacitor Disclosed is a method of increasing the capacitance of a trench capacitor by increasing sidewall area, comprising: forming a trench in a silicon substrate, the trench having a sidewall; forming islands on the sidewall of the trench; and etching pits into ... | 09/16/2003 |
| 6608343 | Rough (high surface area) electrode from Ti and TiN, capacitors and semiconductor devices including same A technique for forming a high surface area electrode or storage node for a capacitor and devices formed thereby, including depositing a first layer of conductive material on a substrate, such that a discontinuous layer is formed. A second conductive mate... | 08/19/2003 |
| 6605520 | Method of forming silicon-germanium film A method of forming a silicon-germanium (SiGe) film for a gate electrode. In a metal gate manufacture process, as the content of germanium (Ge) is increased, the surface roughness of the silicon-germanium (SiGe) film is increased, which makes difficult to... | 08/12/2003 |
| 6602762 | System and method of laser sintering dies and dies sintered by laser sintering A laser sintering system is provided for sintering a die having a serrate edge. The laser sintering system comprises a laser generator for generating a laser beam and a movable carriage for carrying said die. The laser beam sinters the serrate edge of sai... | 08/05/2003 |
| 6583022 | Methods of forming roughened layers of platinum and methods of forming capacitors In one aspect, the invention includes a method of forming a roughened layer of platinum, comprising: a) providing a substrate within a reaction chamber; b) flowing an oxidizing gas into the reaction chamber; c) flowing a platinum precursor into the reacti... | 06/24/2003 |
| 6562684 | Methods of forming dielectric materials The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion of a dielectric material. After the nitrogen-comprising la... | 05/13/2003 |
| 6559002 | Rough oxide hard mask for DT surface area enhancement for DT DRAM In a process for making a DT DRAM structure, the improvement of providing a surface area enhanced DT below the collar region and node capacitance that does not shrink with decreasing groundrule/cell size, comprising: a) providing a semiconductor substrate havi... | 05/06/2003 |
| 6555430 | Process flow for capacitance enhancement in a DRAM trench Methods forming a trench region of a trench capacitor structure having increase surface area are provided. One method includes the steps of forming a discontinuous polysilicon layer on exposed walls of a lower trench region, the discontinuous polysilicon ... | 04/29/2003 |
