Quotables
"Inventing is a combination of brains and materials. The more brains you use, the less material you need."
Charles Kettering
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7417016 | Composition for the removing of sidewall residues The present invention relates to a composition for the removal of so-called “sidewall residues” from metal surfaces, in particular from aluminium or aluminium-containing surfaces, in particular from aluminium or aluminium-containing surfaces, during the producti... | 08/26/2008 |
| 7347951 | Method of manufacturing electronic device A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist... | 03/25/2008 |
| 7332449 | Method for forming dual damascenes with supercritical fluid treatments A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprisin... | 02/19/2008 |
| 7323402 | Trench Schottky barrier diode with differential oxide thickness A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination... | 01/29/2008 |
| 7276452 | Method for removing mottled etch in semiconductor fabricating process A method for removing mottled etch in a semiconductor fabricating process, prevents mottled etch from being generated after etching, by performing ashing using an oxide plasma, prior to performing wet etching using a photoresist pattern. The method for removing the ... | 10/02/2007 |
| 7273824 | Semiconductor structure and fabrication therefor A semiconductor structure and a method of fabrication there-for are provided. The semiconductor structure comprises a substrate, a dielectric layer disposed over the substrate, a hydrophilic material layer disposed over the dielectric layer, and a hardmask layer dis... | 09/25/2007 |
| 7256134 | Selective etching of carbon-doped low-k dielectrics The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-c... | 08/14/2007 |
| 7235489 | Device and method to eliminate shorting induced by via to metal misalignment The present invention provides an interconnect that can be employed in an integrated circuit. The interconnect includes a metal line located over a substrate, a dielectric layer located over the metal line, and an interconnect located in the dielectric layer, includ... | 06/26/2007 |
| 7208424 | Method of forming a semiconductor device having a metal layer A metal layer is formed over a metal oxide, where the metal oxide is formed over a semiconductor substrate. A predetermined critical dimension of the metal layer is determined. A first etch is performed to etch the metal layer down to the metal oxide and form footin... | 04/24/2007 |
| 7192878 | Method for removing post-etch residue from wafer surface A low-k dielectric film is deposited on the wafer. A metal layer is then deposited over the low-k dielectric film. A resist pattern is formed over the metal layer. The resist pattern is then transferred to the underlying metal layer to form a metal pattern. The resi... | 03/20/2007 |
| 7022537 | Liquid crystal display device and fabricating method thereof, and reworking method of alignment film using the same A liquid crystal display device includes a substrate, an organic insulating film formed on the substrate, an alignment film having a first etch rate formed on the organic insulating film, and a silicon nitride layer having a second etch rate formed between the align... | 04/04/2006 |
| 7018552 | Method of manufacturing electronic device A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist... | 03/28/2006 |
| 6989228 | Method and apparatus for processing samples Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment,... | 01/24/2006 |
| 6855593 | Trench Schottky barrier diode A fabrication process for a Schottky barrier structure includes forming a nitride layer directly on a surface of an epitaxial (“epi”) layer and subsequently forming a plurality of trenches in the epi layer. The interior walls of the trenches are then deposited w... | 02/15/2005 |
| 6838369 | Method for forming contact hole of semiconductor device A method for forming a contact hole of a semiconductor device, wherein a polymer residual on a bottom surface of the contact hole is treated with plasma of mixture gas containing oxygen to convert the polymer residual into a pure silicon oxide film free of carbon an... | 01/04/2005 |
| 6812120 | Method of forming floating gate of memory device A method of forming a floating gate of a memory cell is provided. A substrate having at least a trench is provided. Next, a tunnel oxide layer is formed on a surface of the trench. Next, a conductive layer is filled in the trench. Next, two-step etching process is c... | 11/02/2004 |
| 6812128 | Method of manufacturing multilayer structured semiconductor device A step for forming a wiring on a semiconductor substrate, a step for forming a first silicon oxide film on the semiconductor substrate having the wiring, and a step for forming an interlayer insulating film composed of a material bearing a low specific inductive cap... | 11/02/2004 |
| 6797618 | Method for forming silicide film of a semiconductor device A conductive pattern having a surface including silicon is formed on a substrate of a semiconductor device and a conduction region having a surface including silicon is formed in the substrate. A radio frequency etching process is performed ex-situ to remove impurit... | 09/28/2004 |
| 6773947 | Method of manufacturing semiconductor device including an opening formed by a laser According to the present invention, of the resist film applied to the entire surface of the silicon substrate, the part on the electrode pattern is removed and an opening shaped like a dish in which the diameter of the upper part is larger than that of the lower par... | 08/10/2004 |
| 6734120 | Method of photoresist ash residue removal A method of enabling the removal of fluorine containing residue from a semiconductor substrate comprising applying a gas and/or vapor to which the residue is reactive to the residue while the temperature of the substrate is at an elevated level with respect to ambie... | 05/11/2004 |
| 6734121 | Methods of treating surfaces of substrates In one aspect, the invention includes a method of treating a surface of a substrate. A mixture which comprises at least a frozen first material and liquid second material is provided on the surface and moved relative to the substrate. In another aspect, the inventio... | 05/11/2004 |
| 6723626 | Method of manufacturing semiconductor device In a method of manufacturing a semiconductor device, an insulating film is formed on a semiconductor substrate, and a wiring line groove is formed in the insulating film. Then, a conductive film is formed to fill the wiring line groove and to cover the insulating fi... | 04/20/2004 |
| 6713376 | Method of manufacturing a contract element and a multi-layered wiring substrate, and wafer batch contact board In a method of manufacturing a contact element, provision is made of a laminated body which has an insulating film, an electrically conductive layer stacked on the insulating film, and bump holes opened. A treatment is carried out so as to remove organic materials a... | 03/30/2004 |
| 6673721 | PROCESS FOR REMOVAL OF PHOTORESIST MASK USED FOR MAKING VIAS IN LOW K CARBON-DOPED SILICON OXIDE DIELECTRIC MATERIAL, AND FOR REMOVAL OF ETCH RESIDUES FROM FORMATION OF VIAS AND REMOVAL OF PHOTORESIST MASK A process for removal of a photoresist mask used to etch openings in low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and for removing etch residues remaining from either the etching of the openings or removal of th... | 01/06/2004 |
| 6638875 | Oxygen free plasma stripping process A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free ga... | 10/28/2003 |
| 6596637 | Chemically preventing Cu dendrite formation and growth by immersion The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines... | 07/22/2003 |
| 6573181 | Method of forming contact structures using nitrogen trifluoride preclean etch process and a titanium chemical vapor deposition step A method of forming a contact in an integrated circuit including forming a dielectric layer over a silicon substrate, etching a contact hole through the dielectric layer, exposing the etched contact hole to a plasma formed from a preclean gas comprising n... | 06/03/2003 |
| 6465358 | Post etch clean sequence for making a semiconductor device An improved method of forming a semiconductor device is described. The method comprises forming a dielectric layer on a substrate, forming a photoresist layer on the dielectric layer, then patterning the photoresist layer to define a region to be etched. ... | 10/15/2002 |
| 6457477 | Method of cleaning a copper/porous low-k dual damascene etch A method of cleaning a low-k material etched opening, comprising the following steps. A semiconductor structure having an exposed device therein is provided. An etch stop layer is formed over the semiconductor structure and the exposed device. A layer of ... | 10/01/2002 |
| 6454956 | Structuring method A method for structuring at least one layer to be structured. First, a mask is applied to the layer and the layer is structured using the mask. After the structuring step, the mask is then removed, while leaving behind redepositions of the material of the... | 09/24/2002 |
| 6440874 | High throughput plasma resist strip process for temperature sensitive applications The invention relates to the field of manufacturing semiconductor devices, particularly processes directed to resist removal. In the method of the invention, the wafer temperature is maintained below approximately 210° C. to 220° C. to prevent residue f... | 08/27/2002 |
| 6432806 | Method of forming bumps and template used for forming bumps A method of manufacturing a template having through-holes for attracting and supporting electrically conductive balls by vacuum suction is disclosed. The through-holes are formed by etching and the side walls of the through-holes are smoothed by irradiati... | 08/13/2002 |
| 6429142 | In-situ photoresist removal by an attachable chamber with light source A method of fabricating integrated circuit wafers, in accordance with this invention comprises the following steps. Provide an integrated circuit wafer having devices formed therein covered with a metal layer and a photoresist layer over the metal layer w... | 08/06/2002 |
| 6426275 | Method for manufacturing semiconductor chips using protecting pricing and separating sheets The reverse of a wafer is processed after adhering a protecting sheet and a reinforcing plate to the obverse of a wafer. The wafer is mounted on a frame for dicing via a dicing sheet and diced. Then, the protecting sheet is separated from the wafer after ... | 07/30/2002 |
| 6417112 | Post etch cleaning composition and process for dual damascene system A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying in... | 07/09/2002 |
| 6413436 | Selective treatment of the surface of a microelectronic workpiece In a process for treating a workpiece such as a semiconductor wafer, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides of the workpiece. Exclusion and/or application of the pro... | 07/02/2002 |
| 6406991 | Method of manufacturing a contact element and a multi-layered wiring substrate, and wafer batch contact board In a method of manufacturing a contact element, provision is made of a laminated body which has an insulating film, an electrically conductive layer stacked on the insulating film, and bump holes opened. A treatment is carried out so as to removen organic... | 06/18/2002 |
| 6376384 | Multiple etch contact etching method incorporating post contact etch etching A method for forming a via through a silicon oxide layer. There is first provided a substrate. There is then formed over the substrate a patterned silicon nitride layer which defines a contact region beneath the patterned silicon nitride layer. There is t... | 04/23/2002 |
| 6355576 | Method for cleaning integrated circuit bonding pads A method for cleaning bonding pads on a semiconductor device, as disclosed herein, includes treating the bonding pads with a CF4 and water vapor combination. In the process, the water vapor breaks up and the hydrogen from the water vapor couple... | 03/12/2002 |
| 6291360 | Method of etching a layer The present invention relates to a method of etching a layer on a fabricated thin film transistor in liquid crystal display, which prevents failure of patterns by removing the residues generated from organic material in the air or the remainders of photor... | 09/18/2001 |
