Celebrity Inventors
Comic actor Danny Kaye received patent D166,807 for the co-design of "Blowout Toy or the Like". It's similar to one of those toys that unravels when you blow into at a birthday party except Kaye's has three blowouts going in different directions, not just one.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8158538 | Single electron transistor operating at room temperature and manufacturing method for same The present invention relates to a single-electron transistor (SET) operating at room temperature and a method of manufacturing the same, and to be specific, to a single-electron transistor operating at room temperature and a method of manufacturing the same, which ... | 04/17/2012 |
| 7618905 | Heterostructure self-assembled quantum dot A method and device for a heterostructure self-assembled quantum dot based on inherent strain present in underlying self-assembled quantum dots for the purpose of modification and control of the properties of the self assembled quantum dots structures formed on semi... | 11/17/2009 |
| 7435637 | Quantum wire gate device and method of making same The present invention relates to a method of forming a quantum wire gate device. The method includes patterning a first oxide upon a substrate. Preferably the first oxide pattern is precisely and uniformly spaced to maximize quantum wire numbers per unit area. The m... | 10/14/2008 |
| 7432175 | Quantum dots nucleation layer of lattice mismatched epitaxy Lattice mismatched epitaxy and methods for lattice mismatched epitaxy are provided. The method includes providing a growth substrate and forming a plurality of quantum dots, such as, for example, AlSb quantum dots, on the growth substrate. The method further include... | 10/07/2008 |
| 7419849 | Method for producing single electron semiconductor element The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby the product yield is significantly improved, leading to excellent pr... | 09/02/2008 |
| 7419888 | Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same In a method of forming a silicon-rich nanocrystalline structure by an ALD process, a first gas including a first silicon compound is provided onto an object to form a silicon-rich chemisorption layer on the object. A second gas including oxygen is provided onto the ... | 09/02/2008 |
| 7396696 | Method for manufacturing super bright light emitting diode of nanorod array having InGaN quantum well An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting ... | 07/08/2008 |
| 7364923 | Dressed qubits A quantum computing method comprising constructing a dressing transformation V between a physical Hamiltonian H and an ideal Hamiltonian HID. The physical Hamiltonian H describes a physical quantum computer that comprises a plurality of qubits, including ... | 04/29/2008 |
| 7364969 | Semiconductor fabrication process for integrating formation of embedded nonvolatile storage device with formation of multiple transistor device types A semiconductor fabrication process includes forming polysilicon nanocrystals on a tunnel oxide overlying a first region of a substrate. A second dielectric is deposited overlying the first region and a second region. Without providing any protective layer overlying... | 04/29/2008 |
| 7358101 | Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots The present invention relates to a method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots, it adopts high temperature processing and atmospheric-pressure chemical vapor deposition (APCVD), and directly deposit to form a silicon n... | 04/15/2008 |
| 7338858 | Methods of fabricating nonvolatile memory using a quantum dot A method of fabricating a nonvolatile memory using quantum dots is disclosed. An example method sequentially forms a first insulation layer and a second insulation layer on a substrate where a predetermined device is formed. The example method also forms a hard mask... | 03/04/2008 |
| 7335594 | Method for manufacturing a memory device having a nanocrystal charge storage region A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. An absorption layer is formed on the first layer of dielectric material. The a... | 02/26/2008 |
| 7309875 | Nanocrystal protective layer for crossbar molecular electronic devices A molecular device is provided. The molecular device comprises a junction formed by a pair of crossed electrodes where a first electrode is crossed by a second electrode at a non-zero angle and at least one connector species including at least one switchable moiety ... | 12/18/2007 |
| 7309650 | Memory device having a nanocrystal charge storage region and method A memory device having a metal nanocrystal charge storage structure and a method for its manufacture. The memory device may be manufactured by forming a first oxide layer on the semiconductor substrate, then disposing a porous dielectric layer on the oxide layer and... | 12/18/2007 |
| 7307030 | Method for forming quantum dot, and quantum semiconductor device and method for fabricating the same The method for forming a quantum dot according to the present invention comprises the step of forming an oxide in a dot-shape on the surface of a semiconductor substrate 10, the step of removing the oxide to form a concavity 16 in the position from whi... | 12/11/2007 |
| 7288468 | Luminescent efficiency of semiconductor nanocrystals by surface treatment A method for improving the luminescent efficiency of semiconductor nanocrystals by surface treatment with a reducing agent to produce an improvement in luminescent efficiency and quantum efficiency without creating changes in the luminescent characteristics of the n... | 10/30/2007 |
| 7253104 | Methods of forming particle-containing materials The invention includes methods of forming particle-containing materials, and also includes semiconductor constructions comprising particle-containing materials. One aspect of the invention includes a method in which a first monolayer is formed across at least a port... | 08/07/2007 |
| 7223993 | Optical semiconductor device In the semiconductor laser or electro-absorption optical modulator that includes strained quantum well layers as active layers, making laser characteristics or modulator characteristics adequate has seen the respective limits since band structures, especially, ΔEc ... | 05/29/2007 |
| 7217620 | Methods of forming silicon quantum dots and methods of fabricating semiconductor memory device using the same The disclosure provides methods of forming a silicon quantum dots for application in a semiconductor memory device. One example method includes sequentially forming a pad oxide film and a sacrificial insulation film on a silicon substrate; forming a wall layer by se... | 05/15/2007 |
| 7211464 | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bu... | 05/01/2007 |
| 7183159 | Method of forming an integrated circuit having nanocluster devices and non-nanocluster devices An integrated circuit is formed by identifying multiple regions, each having transistors that have a gate oxide thickness that differs between the multiple regions. One of the regions includes transistors having a nanocluster layer and another of the regions include... | 02/27/2007 |
| 7163902 | Infra-red light-emitting device and method for preparing the same The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive l... | 01/16/2007 |
| 7160822 | Method of forming quantum dots for extended wavelength operation A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots c... | 01/09/2007 |
| 7151047 | Stable, water-soluble quantum dot, method of preparation and conjugates thereof A method for manufacturing powdered quantum dots comprising the steps of: a) reacting quantum dots comprising a core, a cap and a first ligand associated with the outer surfaces thereof with a second ligand, the second ligand displacing the first ligand and attachin... | 12/19/2006 |
| 7109121 | Stress control of semiconductor microstructures for thin film growth A method of forming a suspended semiconductor film is provided comprising providing a semiconductor structure including a layer of semiconductor film over a sacrificial layer, the semiconductor film secured to a substrate; depositing a film of material over the semi... | 09/19/2006 |
| 7105428 | Systems and methods for nanowire growth and harvesting The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In... | 09/12/2006 |
| 7091089 | Method of forming a nanocluster charge storage device In one embodiment, a method of forming a nanocluster charge storage device is provided. A first region of a semiconductor device is identified for locating one or more non-charge storage devices. A second region of the semiconductor device is identified for locating... | 08/15/2006 |
| 7087523 | Method for producing a structure using nanoparticles For forming a fine structure of a desired material, nanoparticles of the same material are prepared in a suspension. A layer of the suspension is applied by a drop-on-demand printing system to a substrate. At least part of the layer is exposed to laser light for mel... | 08/08/2006 |
| 7045811 | Signal amplification using architectures of nanodots and connecting channels Particle localization by geometrical nanostructures allows for the fabrication of artificial atoms and molecules suitable for use as building blocks for molecular electronic devices. Artificial lattices made from the artificial atoms and molecules can be used to cre... | 05/16/2006 |
| 7041530 | Method of production of nano particle dispersed composite material A method of the production of a nanoparticle dispersed composite material capable of controlling a particle size and a three dimensional arrangement of the nanoparticles is provided. The method of the production of a nanoparticle dispersed composite material of the ... | 05/09/2006 |
| 7041539 | Method for making an island of material confined between electrodes, and application to transistors A method produces a microstructure comprising an island of material confined between two electrodes forming barriers, the island (30) of material having lateral flanks running parallel to and lateral flanks running perpendicular to the barriers, wherein the l... | 05/09/2006 |
| 7022628 | Method for forming quantum dots using metal thin film or metal powder Disclosed herein is a method for forming quantum dots, comprising the steps of (a) depositing a metal thin layer onto a substrate, (b) coating a dielectric precursor onto the metal thin layer, and (c) stepwisely heating the resultant substrate; or a method for formi... | 04/04/2006 |
| 7018852 | Methods for single qubit gate teleportation A method for performing a single-qubit gate on an arbitrary quantum state. An ancillary qubit is set to an initial state |I>. The data qubit is coupled to an ancillary qubit. The state of the ancillary qubit is measured, and the data qubit and the ancillary qubit ar... | 03/28/2006 |
| 7015139 | Two-dimensionally arrayed quantum device A quantum device is constituted from a two-dimensional array of quantum dots formed from metal atom aggregates contained in a metalloprotein complex. The metalloprotein is arranged on the surface of a substrate having an insulation layer with a pitch of the size of ... | 03/21/2006 |
| 7015498 | Quantum optical semiconductor device A quantum semiconductor device including quantum dots formed by S-K growth process taking place in a heteroepitaxial system wherein the relationship between the energy level of light holes and the energy level of heavy holes in the valence band is changed by optimiz... | 03/21/2006 |
| 7012025 | Tantalum removal during chemical mechanical polishing The invention relates generally to a composition and a method for selective removal of a barrier layer in chemical mechanical polishing. In one aspect, the composition for selective removal of a barrier layer includes at least one reducing agent, ions from at least ... | 03/14/2006 |
| 6998333 | Method for making nanoscale wires and gaps for switches and transistors A method for forming first and second linear structures of a first composition that meet at right angles, there being a gap at the point at which the structures meet. The linear structures are constructed on an etchable crystalline layer having the first composition... | 02/14/2006 |
| 6998310 | Processes for making a single election transistor with a vertical channel This invention relates to a process for a manufacturing a Coulomb blockade transistor. The process comprises the following steps in sequence: deposition on an insulating substrate of a source layer, a tunnel-insulating layer and an alternating stack of at least one ... | 02/14/2006 |
| 6998634 | Memory device utilizing vertical nanotubes A memory device using vertical nanotubes includes an array of first electrodes arranged in strips in a first direction, a dielectric layer deposited on the array of first electrodes, the dielectric layer having a plurality of holes arranged therein, an array of nano... | 02/14/2006 |
| 6984560 | Methods of forming quantum dots in semiconductor devices Methods of forming quantum dots in semiconductor devices are disclosed. One example method includes adsorbing metal clusters on a silicon substrate by controlling density thereof, growing silicon by heating the substrate on which the metal clusters are adsorbed, and... | 01/10/2006 |
