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| Number | Title | Issue Date |
| 7432218 | Method for producing porous body A process of a porous body comprises the steps of disposing a first material in which pores are formed by anodization on a substrate to form a first layer, disposing on the first layer a second material which has a hardness lower than that of the first material and ... | 10/07/2008 |
| 7335575 | Semiconductor constructions and semiconductor device fabrication methods A method of fabricating a semiconductor device includes etching a substrate to form a recess, the substrate being formed on a backside of a semiconductor wafer, forming pores in the substrate in an area of the recess, and forming in the recess a material having a th... | 02/26/2008 |
| 7309620 | Use of sacrificial layers in the manufacture of high performance systems on tailored substrates The invention relates to methods for preparing a removable system on a mother substrate. The method deposits a high surface to volume sacrificial layer on a mother substrate and stabilizes the sacrificial layer by a) removing volatile chemical species in and on the ... | 12/18/2007 |
| 7300854 | Method for producing a semiconductor component having a movable mass in particular, and semiconductor component produced according to this method A method of producing a semiconductor component, e.g., a multilayer semiconductor component, and a semiconductor component produced by this method, where the semiconductor component has, e.g., a mobile mass, i.e., an oscillator structure. A method easily and ... | 11/27/2007 |
| 7279404 | Process for fabricating strained layers of silicon or of a silicon/germanium alloy A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, includes: a) the formation of a layer (2) of silicon or of a silicon/germanium alloy on a layer (1) of a material having a modifiable lattice parameter; and | 10/09/2007 |
| 7265064 | Semiconductor device with porous interlayer insulating film In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including... | 09/04/2007 |
| 7112615 | Porous material formation by chemical vapor deposition onto colloidal crystal templates Methods and systems are disclosed for fabricating ultra-low dielectric constant porous materials. In one aspect of the invention, a method for making porous low-k films is disclosed. The method uses polymer based porogens as sacrificial templates around which a chem... | 09/26/2006 |
| 7091108 | Methods and apparatuses for manufacturing ultra thin device layers for integrated circuit devices Embodiments of the invention use silicon on porous silicon wafers to produce a reduced-thickness IC device wafers. After device manufacturing, a temporary support is bonded to the device layer. The uppermost silicon layer is then separated from the silicon substrate... | 08/15/2006 |
| 7060587 | Method for forming macropores in a layer and products obtained thereof A method for forming macropores in a substrate is disclosed. On a substrate a pattern of submicron features is formed. This pattern is covered with a layer, which is preferably selectively removable with respect to the substrate and the submicron features. This cove... | 06/13/2006 |
| 7052976 | Method and apparatus for cutting devices from conductive substrates secured during cutting by vacuum pressure A method and system for cutting a wafer comprising a conductive substrate attached to an array of integrated devices includes placing the wafer on a stage such as a movable X-Y stage including a vacuum chuck having a porous mounting surface, and securing the wafer d... | 05/30/2006 |
| 7005380 | Simultaneous formation of device and backside contacts on wafers having a buried insulator layer A semiconductor device manufacturing method is provided where a device structure is formed on top of a wafer that comprises a backside semiconductor substrate, a buried insulator layer and a top semiconductor layer. Then, an etch stop layer is formed upon the wafer ... | 02/28/2006 |
| 6982224 | Method for forming metal wires in semiconductor device The present invention provides a method that can prevent an anti-diffusion film from being formed defectively on a porous dielectric film due to pores in method for forming metal wires in a semiconductor device in which the porous dielectric film is used as an insul... | 01/03/2006 |
| 6962855 | Method of forming a porous material layer in a semiconductor device A material layer containing impurities that react with water molecules is formed on a substrate. The material layer is then heated under a pressure exceeding one atmosphere and in the presence of water vapor to generate pores in the material layer. The material laye... | 11/08/2005 |
| 6939782 | Method for producing thin layers on a specific support and an application thereof The invention relates to a method for producing a thin layer (8) containing at least one component (6, 6A, 6B) comprising:—a preparation step, wherein an added layer (2, 3, 4) is created on a support (1), at least one part (2 | 09/06/2005 |
| 6939728 | Method of fabricating silicon emitter with a low porosity heavily doped contact layer A high emission electron emitter and a method of fabricating a high emission electron emitter are disclosed. A high emission electron emitter includes an electron injection layer, an active layer of high porosity porous silicon material in contact with the electron ... | 09/06/2005 |
| 6896955 | Ionic additives for extreme low dielectric constant chemical formulations A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an a... | 05/24/2005 |
| 6881644 | Smoothing method for cleaved films made using a release layer A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which had a porous silicon layer thereon. The substrate may have a distribution of hydrogen bearing ... | 04/19/2005 |
| 6878611 | Patterned strained silicon for high performance circuits In the preferred embodiment of this invention a method is described to convert patterned SOI regions into patterned SGOI (silicon-germanium on oxide) by the SiGe/SOI thermal mixing process to further enhance performance of the logic circuit in an embedded DRAM. The ... | 04/12/2005 |
| 6875633 | Process for production of SOI substrate and process for production of semiconductor device A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the sing... | 04/05/2005 |
| 6852648 | Semiconductor device having a low dielectric constant dielectric material and process for its manufacture A process for fabricating an integrated semiconductor device with a low dielectric constant material and an integrated semiconductor device with the low dielectric constant material interposed between two conductors is disclosed. The low dielectric constant material... | 02/08/2005 |
| 6828253 | Enhancement, stabilization and metallization of porous silicon A post-etch treatment for enhancing and stabilizing the photoluminescence (PL) from a porous silicon (PS) substrate is outlined. The method includes treating the PS substrate with an aqueous hydrochloric acid solution and then treating the PS substrate with an alcoh... | 12/07/2004 |
| 6812163 | Semiconductor device with porous interlayer insulating film In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate includin... | 11/02/2004 |
| 6806171 | Method of producing a thin layer of crystalline material A technique for forming a film of crystalline material, preferably silicon. The technique creates a sandwich structure with a weakened region at a selected depth underneath the surface. The weakened region is a layer of porous silicon with high porosity. The high po... | 10/19/2004 |
| 6806161 | Process for preparing insulating material having low dielectric constant The present invention relates to low dielectric materials essential for a semiconductor having high density and high performance of the next generation, particularly to a process for preparing a porous interlayer insulating film having low dielectric constant contai... | 10/19/2004 |
| 6746932 | Method of reducing the thickness of a silicon substrate A method of reducing the thickness of a silicon substrate made superficially porous in particular in certain areas on one side. A back of the silicon substrate facing a porous front is made porous over the entire area and the produced porous material is subsequently... | 06/08/2004 |
| 6693024 | Semiconductor component with a semiconductor body having a multiplicity of pores and method for fabricating The semiconductor component is fabricated on the basis of a semiconductor body with a first and a second surface. A multiplicity of pores are formed in the semiconductor body. The pores extend into the semiconductor body proceeding from the first surface ... | 02/17/2004 |
| 6689633 | Optical detector with a filter layer made of porous silicon and method for the production thereof An optical silicon-based detector with a porous filter layer that has a laterally modifiable filter effect, comprising a plurality of integrated photosensitive cells. The invention also relates to a method for the production of an optical detector by crea... | 02/10/2004 |
| 6682990 | Separation method of semiconductor layer and production method of solar cell The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opp... | 01/27/2004 |
| 6649485 | Method for the formation and lift-off of porous silicon layers A method for the manufacture, formation, and removal of porous layers in a semiconductor substrate having at least a surface acting as a cathode. The method comprises applying a solution comprising negative Fluorine (F-) ions between the surfac... | 11/18/2003 |
| 6632699 | Process for making a color selective Si detector array A multiplicity of components form a photodiode array on a substrate. Each of the components consists of a transistor of the p-n-p type with the outermost p-doped layer being transformed into an optical filter by control of the anodic etching operation uti... | 10/14/2003 |
| 6617191 | Method for anodizing silicon substrates for surface type acceleration sensors An epitaxial growth layer, an oxide film, and a passivation film are formed on a silicon substrate. Except for an opening formed on a part of the passivation film, the upper surface of the passivation film is covered with a metal protective film made of t... | 09/09/2003 |
| 6605518 | Method of separating composite member and process for producing thin film To cause a crack at a fixed position in a separation layer, a method of separating a composite member includes the steps of forming a separation layer inside a composite member, forming inside the separation layer a stress riser layer in which an in-plane... | 08/12/2003 |
| 6602761 | Process for production of SOI substrate and process for production of semiconductor device A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen in... | 08/05/2003 |
| 6602804 | Porous materials Porous dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous dielectric materials. Also disclosed are methods of forming integrated circuits containing such... | 08/05/2003 |
| 6589883 | Enhancement, stabilization and metallization of porous silicon A post-etch treatment for enhancing and stabilizing the photoluminescence (PL) from a porous silicon (PS) substrate is outlined. The method includes treating the PS substrate with an aqueous hydrochloric acid solution and then treating the PS substrate wi... | 07/08/2003 |
| 6548107 | Methods of forming an insulating material proximate a substrate, and methods of forming an insulating material between components of an integrated circuit In one aspect, the invention encompasses a method of forming an insulating material around a conductive component. A first material is chemical vapor deposited over and around a conductive component. Cavities are formed within the first material. After th... | 04/15/2003 |
| 6534380 | Semiconductor substrate and method of manufacturing the same Before a semiconductor substrate and a base substrate is directly bonded to one another, in a protective film removing step, a contamination protective film formed on the semiconductor substrate to protect it from contamination during an ion implanting st... | 03/18/2003 |
| 6524972 | Method for forming an interlayer insulating film, and semiconductor device A method for forming an interlayer insulating film is disclosed. This method comprises the steps of: forming an underlying insulating film on an object to be formed; and forming a porous SiO2 film on said underlying insulating film by a Chemica... | 02/25/2003 |
| 6495479 | Simplified method to produce nanoporous silicon-based films A nanoporous dielectric film useful for the production of semiconductor devices, integrated circuits and the like, is provided, together with processes for producing these improved films. The films are produced by a process that includes (a) preparing a s... | 12/17/2002 |
| 6489217 | Method of forming an integrated circuit on a low loss substrate A method for manufacturing an integrated circuit structure is disclosed. The method includes providing a layer of porous silicon, and epitaxially growing a high resistivity layer on the layer of porous silicon. Devices are then formed on the high resistiv... | 12/03/2002 |
