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| Number | Title | Issue Date |
| 7366575 | Wafer polishing control Methods of controlling polishing of wafers are disclosed. In one aspect, a method may include measuring one or more pre-polish thicknesses of one or more layers of a wafer. The one or more layers may then be polished. Then a post-polish thickness of a layer of the w... | 04/29/2008 |
| 7338882 | Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same A method of fabricating a nano silicon on insulator (SOI) wafer having an excellent thickness evenness without performing a chemical mechanical polishing (CMP) and a wafer fabricated by the same are provided. The provided method includes preparing a bond wafer and a... | 03/04/2008 |
| 7314823 | Chemical mechanical polishing composition and process A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adj... | 01/01/2008 |
| 7300876 | Method for cleaning slurry particles from a surface polished by chemical mechanical polishing A method is provided to clean slurry particles from a surface in which tungsten and dielectric are coexposed after a dielectric CMP step. Such a surface is formed when tungsten features are patterned and etched, the tungsten features are covered with dielectric, and... | 11/27/2007 |
| 7259097 | Control system for multi-layer chemical mechanical polishing process and control method for the same A method for controlling an apparatus to perform a multi-layer chemical mechanical polishing (CMP) process with a polishing rate for a plurality of process runs. For each process run, a multilayered structure with a first thickness formed on a wafer is polished and ... | 08/21/2007 |
| 7186654 | Chemical mechanical polishing slurry and method of manufacturing semiconductor device by using the same A chemical mechanical polishing slurry contains an alumina powder including α-alumina particles and at least one other alumina particles having a crystal structure different from that of α-alumina, and resin particles. ... | 03/06/2007 |
| 7125776 | Multi-step chemical mechanical polishing of a gate area in a FinFET A method of manufacturing a MOSFET type semiconductor device includes planarizing a gate material layer that is deposited over a channel. The planarization is performed in a multi-step process that includes an initial “rough” planarization and then a “fine” ... | 10/24/2006 |
| 7078312 | Method for controlling etch process repeatability Plasma etch processes incorporating etch chemistries which include hydrogen. In particular, high density plasma chemical vapor deposition-etch-deposition processes incorporating etch chemistries which include hydrogen that can effectively fill high aspect ratio (typ... | 07/18/2006 |
| 7052996 | Electrochemically polishing conductive films on semiconductor wafers An electropolish process may remove a conductive film from a semiconductor wafer. An electropolish apparatus having a pad over a platen may make surface-to-surface electrical contact with the conductive film of the wafer across the entire surface of the pad and the ... | 05/30/2006 |
| 7052969 | Method for semiconductor wafer planarization by isolation material growth A method of manufacturing a planarized semiconductor wafer in which a semiconductor wafer is provided with a chemical-mechanical polishing stop layer deposited thereon. A photoresist layer is processed and used to form a patterned chemical-mechanical polishing stop ... | 05/30/2006 |
| 7029937 | Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument A depression is formed from a first surface of a semiconductor substrate. An insulating layer is provided on the bottom surface and an inner wall surface of the depression. A conductive portion is provided inside the insulating layer. A second surface of the semicon... | 04/18/2006 |
| 7005383 | Apparatus and methods of chemical mechanical polishing Disclosed are apparatus and methods of chemical mechanical polishing a semiconductor wafer to minimize formation of scratches on a surface of a wafer. According to one example, a method of planarizing a pattern of a wafer by rotating the wafer that is fixed to a car... | 02/28/2006 |
| 7003148 | Detection of an end point of polishing a substrate A two-dimensional image of a substrate surface targeted for polishing is periodically picked up, and the image is analyzed to obtain an entropy H1, H2 of the two-dimensional image. An end point of polishing is then determined according to the entropy H... | 02/21/2006 |
| 7001845 | Methods of treating surfaces of substrates In one aspect, the invention includes a method of treating a surface of a substrate. A mixture which comprises at least a frozen first material and liquid second material is provided on the surface and moved relative to the substrate. In another aspect, the inventio... | 02/21/2006 |
| 6958272 | Pocket implant for complementary bit disturb improvement and charging improvement of SONOS memory cell A technique for forming at least part of an array of a dual bit memory core is disclosed. Initially, a portion of a charge trapping dielectric layer is formed over a substrate and a resist is formed over the portion of the charge trapping dielectric layer. The resis... | 10/25/2005 |
| 6955971 | Semiconductor structure and methods for fabricating same A semiconductor structure and methods for fabricating are disclosed. In an implementation, a method of fabricating a semiconductor structure includes forming a first semiconductor material substrate with a first dielectric area having a first thickness and a second ... | 10/18/2005 |
| 6943114 | Integration scheme for metal gap fill, with fixed abrasive CMP In a method of planarizing a semiconductor wafer, the improvement comprising polishing above metal interconnect lines to uniformly polish the topography of the wafer to a predetermined endpoint on the wafer sufficiently close above the metal interconnect lines, yet ... | 09/13/2005 |
| 6930037 | Process for forming a metal interconnect This invention relates to a process for forming a metal interconnect comprising the steps of forming a concave in an insulating film formed on a substrate, forming a barrier metal film on the insulating film, forming an interconnect metal film over the whole surface... | 08/16/2005 |
| 6930023 | Semiconductor wafer thinning method, and thin semiconductor wafer In a method for thinning a semiconductor wafer by grinding a back surface of the semiconductor wafer in which semiconductor devices 2 are formed on its surface, the surface of the semiconductor wafer 1 is adhered to a support 4 via an adhesive l... | 08/16/2005 |
| 6927160 | Fabrication of copper-containing region such as electrical interconnect A copper-containing layer suitable for an electrical interconnect in a device such as an integrated circuit is created by a procedure in which a trench (104) is formed through a dielectric layer (102) down to a substrate (100). A diffusion barri... | 08/09/2005 |
| 6909935 | Methods with resolution enhancement feature for improving accuracy of conversion of required chemical mechanical polishing pressure to force to be applied by polishing head to wafer CMP methods in which a polishing pad is moved relative to a wafer and a retainer ring implement instructions for applying required pressure to the wafer for CMP operations. Accuracy of computations of the pressures, and of conversion of the pressure to force, is imp... | 06/21/2005 |
| 6893977 | Method of manufacturing a semiconductor device A method of fabricating a semiconductor device is disclosed. An example method sequentially forms a gate insulation film and a sacrificial film on a semiconductor substrate. In addition, the example method forms a bowing hollow by selectively etching the sacrificial... | 05/17/2005 |
| 6890866 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device having a semiconductor substrate with a contact hole filled by an aluminum-containing thin film. This manufacturing method includes a step of forming a silicon-containing thin film so as to fill the contact hole on t... | 05/10/2005 |
| 6872662 | Method for detecting the endpoint of a chemical mechanical polishing (CMP) process A method for detecting the endpoint of a chemical mechanical polishing (CMP) process uses the slope variation of temperature difference of polishing pad. The method combines temperature measurement at polishing pad and atmosphere, and numerical analysis to figure ou... | 03/29/2005 |
| 6855607 | Multi-step chemical mechanical polishing of a gate area in a FinFET A method of manufacturing a MOSFET type semiconductor device includes planarizing a gate material layer that is deposited over a channel. The planarization is performed in a multi-step process that includes an initial “rough” planarization and then a “fine” ... | 02/15/2005 |
| 6852633 | Method for operating chemical mechanical polishing (“CMP”) tool for the manufacture of semiconductor devices A method for processing integrated circuit devices including a water recycling process. The method includes operating a chemical mechanical planarization process, which includes a discharge for process water. The process water is used to process one or more semicond... | 02/08/2005 |
| 6797624 | Solution for ruthenium chemical mechanical planarization A solution for ruthenium chemical mechanical planarization containing a nitric acid and an oxidizer is disclosed. A method of forming ruthenium pattern using a polished ruthenium layer is also disclosed. The disclosed solution improves the polishing speed of rutheni... | 09/28/2004 |
| 6794263 | Method of manufacturing a semiconductor device including alignment mark A method of inhibiting pit occurrence on a semiconductor substrate during manufacture of a semiconductor device includes forming an isolation using a shallow trench isolation (STI) method in a semiconductor substrate, forming an insulation layer on an entire surface... | 09/21/2004 |
| 6787470 | Sacrificial feature for corrosion prevention during CMP A sacrificial semiconductor feature for preventing corrosion that can result during chemical-mechanical planarization (CMP) is disclosed. A semiconductor device of the invention is fabricated at least in part by performing CMP. The device includes a desired semicond... | 09/07/2004 |
| 6759322 | Method for forming wiring structure After a plurality of grooves are formed in an insulating film and in an anti-reflection film on the insulating film, a barrier metal film and a conductive film are deposited on the anti-reflection film such that each of the wiring grooves is filled therewith. Subseq... | 07/06/2004 |
| 6740169 | Method of reworking a conditioning disk A conditioning disk and a conditioner for a chemical mechanical polishing (CMP) pad, and a method of fabricating, reworking, and cleaning the conditioning disk, are utilized to improve conditioning efficiency, and to reduce production expenses. The conditioning disk... | 05/25/2004 |
| 6740589 | Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer, including an aqueous solvent and at least one amino acid having two or more nitrogen atoms. ... | 05/25/2004 |
| 6725120 | Apparatus and methods with resolution enhancement feature for improving accuracy of conversion of required chemical mechanical polishing pressure to force to be applied by polishing head to wafer CMP systems and methods in which a polishing pad is moved relative to a wafer and a retainer ring implement instructions for applying required pressure to the wafer for CMP operations. Accuracy of computations of the pressures, and of conversion of the pressure to f... | 04/20/2004 |
| 6723655 | Methods for fabricating a semiconductor device The present invention discloses methods for fabricating a semiconductor device. In one embodiment, a conductive interconnection is formed on a semiconductor substrate to overlap with a mask insulating film pattern. An insulating film spacer is formed at side walls o... | 04/20/2004 |
| 6713842 | Mask for and method of forming a character on a substrate A mask for and method of forming a character on a substrate of a semiconductor device that can be clearly observed even if positioned over complex and random patterns formed on the substrate. The mask includes a transparent medium that includes one or more plurality... | 03/30/2004 |
| 6709918 | Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology A method for making concurrently metal-insulator-metal (MIM) capacitors and a metal resistors in a Cu damascene back-end-of-line process is achieved. The method forms a Cu capacitor bottom metal plate using a dual-damascene process. A Si3N4 or ... | 03/23/2004 |
| 6709981 | Method and apparatus for processing a semiconductor wafer using novel final polishing method A method of manufacturing a semiconductor wafer includes providing an ingot of semiconductor material, slicing the wafer from the ingot, and processing the wafer to increase parallelism of the front surface and the back surface. A final polishing operation on at lea... | 03/23/2004 |
| 6596087 | Method of cleaning conditioning disk A conditioning disk and a conditioner for a chemical mechanical polishing (CMP) pad, and a method of fabricating, reworking, and cleaning the conditioning disk, are utilized to improve conditioning efficiency, and to reduce production expenses. The condit... | 07/22/2003 |
| 6594542 | Method and system for controlling chemical mechanical polishing thickness removal An improved method and apparatus for controlling the depth of removal by chemical mechanical polishing of a selected material on a supporting semiconductor underlayer where it is desired to terminate removal of the selected material, such as silicon oxide... | 07/15/2003 |
| 6566261 | Semiconductor device and method of manufacturing the same There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C--H bon... | 05/20/2003 |
