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| Number | Title | Issue Date |
| 7846852 | Method for manufacturing capacitor embedded in interposer As for electrode pads for a semiconductor integrated circuit element, some of electrode pads for signal transmission are coupled to Ti films. Others of the electrode pads for signal transmission are coupled to electrode pads through wiring routed in multilayer wirin... | 12/07/2010 |
| 7829476 | Method of manufacturing semiconductor device and semiconductor device A method of manufacturing a semiconductor device has forming a capacitor having electrodes and a ferroelectric film provided therebetween above a substrate, forming a pad electrode electrically connected to one of the electrodes of the capacitor above the substrate,... | 11/09/2010 |
| 7442626 | Rectangular contact used as a low voltage fuse element A repair fuse element and method of construction are disclosed that eliminate or substantially reduce the disadvantages and problems associated with prior fuse elements. In one embodiment, the fuse element is constructed with a rectangular-shaped contact. The contac... | 10/28/2008 |
| 7439199 | Capacitive element, method of manufacture of the same, and semiconductor device A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers ... | 10/21/2008 |
| 7407897 | Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same In a capacitor of an analog semiconductor device having a multi-layer dielectric film and a method of manufacturing the same, the multi-layer dielectric film can be readily manufactured, has weak reactivity with corresponding electrodes and offers excellent leakage ... | 08/05/2008 |
| 7378719 | Low leakage MIM capacitor Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures ... | 05/27/2008 |
| 7332439 | Metal gate transistors with epitaxial source and drain regions An MOS transistor formed on a heavily doped substrate is described. Metal gates are used in low temperature processing to prevent doping from the substrate from diffusing into the channel region of the transistor. ... | 02/19/2008 |
| 7332401 | Method of fabricating an electrode structure for use in an integrated circuit An electrode structure includes a first layer of conductive material and a dielectric layer formed on a surface of the first layer. An opening is formed in the dielectric layer to expose a portion of the surface of the first layer. A binding layer is formed on the d... | 02/19/2008 |
| 7329955 | Metal-insulator-metal (MIM) capacitor A metal-insulator-metal (MIM) capacitor is made according to a copper dual-damascene process. A first copper or copper alloy metal layer if formed on a substrate. A portion of the first metal layer is utilized as the lower plate of the MIM capacitor. An etch stop di... | 02/12/2008 |
| 7321495 | Capacitor and method for manufacturing the same A multilayer ceramic capacitor (10) having reduced inductance which is separated into a first layer body (11) and a second layer body (12). The first layer body (11) and the second layer body (12) are formed by alternately layering... | 01/22/2008 |
| 7317221 | High density MIM capacitor structure and fabrication process A stacked integrated circuit (IC) MIM capacitor structure and method for forming the same the MIM capacitor structure including a first MIM capacitor structure formed in a first IMD layer comprising an first upper and first lower electrode portions; at least a secon... | 01/08/2008 |
| 7312514 | High-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, and production method of thin film capacity element A dielectric thin film 8, comprising a first bismuth layer-structured compound layer 8a expressed by a composition formula of (Bi2O2)2+(Am−1 Bm O3m+1)2− or Bi2... | 12/25/2007 |
| 7279382 | Methods of manufacturing semiconductor devices having capacitors An example method of manufacturing a semiconductor device having a capacitor includes sequentially depositing a lower metal layer, an insulating layer and an upper metal layer on a semiconductor substrate, removing a first photoresist pattern by using O2/... | 10/09/2007 |
| 7244656 | Thin film circuit board device and method for manufacturing the same The present invention relates to a thin film circuit board device having passive elements in wiring layers. The thin film circuit board device includes a base board (2) and a circuit part (3) including insulating layers (11) and (16) and ... | 07/17/2007 |
| 7232736 | Semiconductor devices with capacitors of metal/insulator/metal structure and methods for forming the same Semiconductor devices with copper interconnections and MIM capacitors and methods of fabricating the same are provided. The device includes a lower electrode composed of a first copper layer. A first insulation layer covers a lower electrode. A window is formed in t... | 06/19/2007 |
| 7205634 | MIM structure and fabrication process with improved capacitance reliability An MIM structure and method for forming the same the method including forming a bottom conductive electrode overlying a semiconducting substrate; forming a first protection layer on the conductive electrode; forming a dielectric layer on the first protection layer; ... | 04/17/2007 |
| 7183649 | Methods and procedures for engineering of composite conductive films by atomic layer deposition A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer b... | 02/27/2007 |
| 7176052 | Capacitor, circuit board, method of formation of capacitor, and method of production of circuit board A method of formation of a capacitor forming part of an electric circuit when producing a circuit board, consisting of forming a valve metal bottom electrode layer and a valve metal oxide dielectric layer on the same, then integrally forming a solid electrolyte laye... | 02/13/2007 |
| 7176064 | Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide A memory cell is formed of a semiconductor junction diode in series with an antifuse. The cell is programmed by rupture of the antifuse. The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide. The suicide apparently p... | 02/13/2007 |
| 7169653 | Fabrication method for liquid crystal display A method of fabricating a liquid crystal display panel is provided, which comprises the steps of providing a substrate; forming a mask layer over the substrate, wherein the mask layer has a reverse-tapered opening exposing a predetermined conductive line area; depos... | 01/30/2007 |
| 7151036 | Precision high-frequency capacitor formed on semiconductor substrate A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A s... | 12/19/2006 |
| 7135758 | Surface mount solder method and apparatus for decoupling capacitance and process of making A system to package high performance microelectronic devices, such as processors, responds to component transients. In one embodiment, the system includes a decoupling capacitor that is disposed between a Vcc electrical bump and a Vss electrical bump. The decoupling... | 11/14/2006 |
| 7098083 | High impedance antifuse A programmable element that has a first diode having an electrode and a first insulator disposed between the substrate and said electrode of said first device, said first insulator having a first value of a given characteristic, and an FET having an electrode and a ... | 08/29/2006 |
| 7081659 | Semiconductor apparatus having a built-in electric coil and a method of making the semiconductor apparatus A semiconductor apparatus includes lower conductive film strips, an inter-layer insulating layer, implanted conductive members, and upper conductive film strips. The lower conductive film strips are formed in a pattern closely adjacent in a line width orientation, e... | 07/25/2006 |
| 7060556 | Drain extended MOS transistors with multiple capacitors and methods of fabrication Multi-capacitor drain extended transistor devices and methods are provided. A first capacitor structure comprises a first dielectric layer (14) and a first gate layer (16) and first and second lateral sides. The first capacitor structure overlies a cha... | 06/13/2006 |
| 7005377 | Bimetal layer manufacturing method A bimetal layer manufacturing method includes the procedure of: forming a first dielectric layer on the surface of a semiconductor substrate which has a first metal layer (conductive layer) of a selected pattern formed thereon; forming a SOG layer on the surface of ... | 02/28/2006 |
| 6995071 | Methods of forming MIM type capacitor structures using low temperature plasma processing Methods of forming metal-insulator-metal type capacitors in integrated circuit memory devices can include crystallizing an HfO2 dielectric layer on a lower electrode of a capacitor structure in a low temperature plasma treatment at a temperature in range ... | 02/07/2006 |
| 6967115 | Device transfer techniques for thin film optoelectronic devices A method for fabricating optoelectronic devices is disclosed. A sacrificial layer is deposited, formed or attached to a target substrate having a plurality of through holes. One or more device layers are formed on the sacrificial layer and the sacrificial layer is e... | 11/22/2005 |
| 6964908 | Metal-insulator-metal capacitor and method of fabricating same A metal-insulator-metal (MIM) capacitor including a metal layer, an insulating layer formed on the metal layer, at least a first opening and at least a second opening formed in the first insulating layer, a dielectric layer formed in the first opening, a conductive ... | 11/15/2005 |
| 6933205 | Integrated circuit device and method of manufacturing the same The present invention provides an integrated circuit, comprising a semiconductor substrate, an active element formed on the side of one main surface of the semiconductor substrate, an insulating region formed on the side of the main surface of the semiconductor subs... | 08/23/2005 |
| 6927474 | Method of programming an antifuse A metal-to-metal capacitor in a semiconductor integrated circuit is converted to a conductive structure by connecting the first metal plate of the capacitor to ground and the second metal plate of the capacitor to a programming voltage, thus causing the insulator ma... | 08/09/2005 |
| 6911363 | Semiconductor device and manufacturing method thereof A semiconductor device of the present invention includes capacitors made up of a lower electrode, a capacitive insulation film made from metal oxide material, provided on one surface of a semiconductor substrate. An ozone TEOS film is provided on these capacitors, a... | 06/28/2005 |
| 6897105 | Method of forming metal oxide gate structures and capacitor electrodes An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step ... | 05/24/2005 |
| 6887716 | Process for producing high quality PZT films for ferroelectric memory integrated circuits A method for fabrication of ferroelectric capacitor elements of an integrated circuit includes steps of deposition of an electrically conductive bottom electrode layer, preferably made of a noble metal. The bottom electrode is covered with a layer of ferroelectric d... | 05/03/2005 |
| 6882028 | Low leakage MIM capacitor Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures ... | 04/19/2005 |
| 6818498 | Capacitance element and method of manufacturing the same On a substrate, there are provided a lower electrode, a capacitance insulating film, a passivation insulating film, and a first partial film of an upper electrode to be filled in a second aperture (capacitance determining aperture) formed in the passivation insulati... | 11/16/2004 |
| 6809398 | Metal-to-metal antifuse structure and fabrication method A metal-to-metal antifuse according to the present invention is compatible with a Cu dual damascene process and is formed over a lower Cu metal layer planarized with the top surface of a lower insulating layer. A lower barrier layer is disposed over the lower Cu met... | 10/26/2004 |
| 6800920 | RF passive circuit and RF amplifier with via-holes An input matching parallel inductor 114 which utilizes a spiral inductor, and an input matching parallel capacitor 115 which utilizes an MIM capacitor, both being constituting elements of an input matching circuit portion 125, form an input matc... | 10/05/2004 |
| 6787412 | Dielectric element and method for fabricating the same It is disclosed a dielectric element comprising a lower electrode, a dielectric layer, and an upper electrode which are provided on a substrate, in which at least one of the electrodes is a Pt layer, a Ru layer is used as a base layer for the Pt layer. In the fabric... | 09/07/2004 |
| 6777270 | Resistive memory for data storage devices An exemplar method for making a resistive memory element generally includes providing a generally plateau-shaped insulating structure, the insulating structure having a first side wall, a second side wall and a central region disposed between the side walls, deposit... | 08/17/2004 |
