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| Number | Title | Issue Date |
| 8187914 | Methods of forming a phase change memory device Provided are methods of forming a phase change memory device. A semiconductor device having a lower electrode and an interlayer insulating layer may be prepared. The lower electrode may be surrounded by the interlayer insulating layer. Source gases, a reaction gas a... | 05/29/2012 |
| 8178385 | Phase change memory that switches between crystalline phases A phase change memory may transition between two crystalline states. In one embodiment, the phase change material is a chalcogenide which transitions between face centered cubic and hexagonal states. Because these states are more stable, they are less prone to drift... | 05/15/2012 |
| 8173482 | Devices and methods of protecting a cadmium sulfide for further processing Methods for protecting a cadmium sulfide layer on a substrate are provided. The method can include sputtering a cadmium sulfide layer onto a substrate from a cadmium sulfide target at a sputtering pressure (e.g., about 10 mTorr to about 150 mTorr), and sputtering a ... | 05/08/2012 |
| 8168468 | Method of making a semiconductor device including a bridgeable material A method for making a semiconductor device (10) includes providing an interconnect layer (14) over an underlying layer (12), forming a first insulating layer (16) over the interconnect layer, and forming an opening (18) through the... | 05/01/2012 |
| 8163593 | Method of making a nonvolatile phase change memory cell having a reduced contact area A method is described to form a nonvolatile memory cell having a contact area between a phase-change material such as a chalcogenide and a heat source which is smaller than photolithographic limits. A conductive or semiconductor pillar is exposed at a dielectric sur... | 04/24/2012 |
| 8148193 | Semiconductor device and method of fabricating the same A semiconductor device such as a phase change memory device includes a semiconductor substrate including an active region, a conductive pattern disposed to expose the active region, an interlayer dielectric pattern provided on the conductive pattern and including an... | 04/03/2012 |
| 8143089 | Self-align planerized bottom electrode phase change memory and manufacturing method A method is described for self-aligning a bottom electrode in a phase change random access memory PCRAM device where a top electrode serves as a mask for self-aligning etching of the bottom electrode. The bottom electrode has a top surface that is planarized by chem... | 03/27/2012 |
| 8129214 | Phase change memory devices having dual lower electrodes and methods of fabricating the same A semiconductor device includes a semiconductor substrate and a lower interlayer insulating layer disposed on the substrate. An opening passing through the lower interlayer insulating layer and exposing the substrate is included. A buried insulating pattern is dispo... | 03/06/2012 |
| 8124441 | Programmable resistive memory cell with filament placement structure Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion con... | 02/28/2012 |
| 8110428 | Thin-film photovoltaic devices A method is provided for producing a thin-film photovoltaic device. The method includes forming on a substrate a first thin-film absorber layer using a first deposition process. A second thin-film absorber layer is formed on the first thin-film absorber layer using ... | 02/07/2012 |
| 8110429 | Bridge resistance random access memory device and method with a singular contact structure A resistance random access memory in a bridge structure is disclosed that comprises a contact structure where first and second electrodes are located within the contact structure. The first electrode has a circumferential extending shape, such as an annular shape, s... | 02/07/2012 |
| 8110430 | Vacuum jacket for phase change memory element A memory device including a phase change element and a vacuum jacket. The device includes a first electrode element; a phase change element in contact with the first electrode element; an upper electrode element in contact with the phase change element; a bit line e... | 02/07/2012 |
| 8105867 | Self-aligned three-dimensional non-volatile memory fabrication A self-aligned fabrication process for three-dimensional non-volatile memory is disclosed. A double etch process forms conductors at a given level in self-alignment with memory pillars both underlying and overlying the conductors. Forming the conductors in this mann... | 01/31/2012 |
| 8101456 | Method to reduce a via area in a phase change memory cell A memory cell structure and method to form such structure. The method partially comprised of forming a via within an oxidizing layer, over the center of a bottom electrode. The method includes depositing a via spacer along the sidewalls of the via and oxidizing the ... | 01/24/2012 |
| 8097487 | Method for making a phase change memory device with vacuum cell thermal isolation A memory device with improved thermal isolation. The memory cell includes a first electrode element, having an upper surface; an insulator stack formed on the first electrode element, including first, second and third insulating members, all generally planar in form... | 01/17/2012 |
| 8080439 | Method of making a vertical phase change memory (PCM) and a PCM device A method of making a phase change random access memory (PCM) device comprises forming a PCM stack that includes a heater layer, phase change material layer, and a top electrode layer. A top protection layer is formed overlying the PCM stack. The top protection layer... | 12/20/2011 |
| 8080440 | Resistor random access memory cell with L-shaped electrode A phase change random access memory PCRAM device is described suitable for use in large-scale integrated circuits. An exemplary memory device has a pipe-shaped first electrode formed from a first electrode layer on a sidewall of a sidewall support structure. A sidew... | 12/20/2011 |
| 8076174 | Method of forming a sputtering target A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium seleni... | 12/13/2011 |
| 8071419 | Thin-film devices formed from solid particles Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at ... | 12/06/2011 |
| 8067262 | Polymeric precursors for CAIGS silver-containing photovoltaics This invention relates to compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositi... | 11/29/2011 |
| 8062923 | Thin film fuse phase change cell with thermal isolation pad and manufacturing method A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the... | 11/22/2011 |
| 8062922 | Buffer layer deposition for thin-film solar cells Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer or layers may be dispensed separately to the substrate web, rather than being mixed prior to their applicat... | 11/22/2011 |
| 8062921 | Phase change memories with improved programming characteristics A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achiev... | 11/22/2011 |
| 8058095 | Encapsulated phase change cell structures and methods Methods and devices associated with phase change cell structures are described herein. In one or more embodiments, a method of forming a phase change cell structure includes forming a substrate protrusion that includes a bottom electrode, forming a phase change mate... | 11/15/2011 |
| 8026124 | Method for fabricating copper/indium/gallium/selenium solar cell by wet process under non-vacuum condition A method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition is provided. In the method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition, a substrate having a ... | 09/27/2011 |
| 8026123 | Integrated circuit including a memory apparatus and production method The memory apparatus according to the invention and having a cell 14 has a high electrical resistance in a first state and a low electrical resistance in a second state. The cell 14 has an edge area 16 and a core area 15, in which the ele... | 09/27/2011 |
| 8021914 | Manufacture of cadmium mercury telluride A method of manufacture of cadmium mercury telluride (CMT) is disclosed. The method involves growing one or more buffer layers on a substrate by molecular beam epitaxy (MBE). Subsequently at least one layer of cadmium mercury telluride, Hg1-xCdxTe where x is between... | 09/20/2011 |
| 8017430 | Structured silicon anode A battery can be fabricated from a substrate including silicon. This allows the battery to be produced as an integrated unit. The battery includes an anode formed from an array of spaced elongated structures, such as pillars, which include silicon and which can be f... | 09/13/2011 |
| 8012789 | Nonvolatile memory device and method of manufacturing the same A nonvolatile memory device, including a lower electrode on a semiconductor substrate, a phase change material pattern on the lower electrode, an adhesion pattern on the phase change material pattern and an upper electrode on the adhesion pattern, wherein the adhesi... | 09/06/2011 |
| 8012790 | Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell A method for fabricating a phase change memory pore cell that includes forming a bottom electrode, forming a first dielectric layer on the bottom electrode, forming a sacrificial layer on the first dielectric layer, forming an isolation layer on the sacrificial laye... | 09/06/2011 |
| 8008113 | Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication The present invention advantageously provides for, in different embodiments, low-cost deposition techniques to form high-quality, dense, well-adhering Group IBIIIAVIA compound thin films with macro-scale as well as micro-scale compositional uniformities. It also pro... | 08/30/2011 |
| 8008114 | Phase change memory device and manufacturing method A phase change memory device comprises a photolithographically formed phase change memory cell having first and second electrodes and a phase change element positioned between and electrically coupling the opposed contact elements of the electrodes to one another. T... | 08/30/2011 |
| 7989256 | Method for manufacturing CIS-based thin film solar cell In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer (2) is formed on a subst... | 08/02/2011 |
| 7985616 | Methods to form wide heater trenches and to form memory cells to engage heaters Embodiments of the present invention provide a method that includes providing a wafer including multiple cells, each cell including at least one emitter, and performing a lithographic operation on the wafer. The lithographic operation comprises forming heater trench... | 07/26/2011 |
| 7977147 | Strained silicon with elastic edge relaxation A thin blanket epitaxial layer of SiGe is grown on a silicon substrate to have a biaxial compressive stress in the growth plane. A thin epitaxial layer of silicon is deposited on the SiGe layer, with the SiGe layer having a thickness less than its critical thickness... | 07/12/2011 |
| 7972893 | Memory device manufacturing method A method for making a memory device includes providing a dielectric material, having first and second upwardly and inwardly tapering surfaces and a surface segment connecting the first and second surfaces. First and second electrodes are formed over the first and se... | 07/05/2011 |
| 7964437 | Memory device having wide area phase change element and small electrode contact area A memory cell device of the type that includes a memory material switchable between electrical property states by application of energy, situated between first and second (“bottom” and “top”) electrodes has a top electrode including a larger body portion and... | 06/21/2011 |
| 7960205 | Tellurium precursors for GST films in an ALD or CVD process The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium fo... | 06/14/2011 |
| 7939364 | Optimized lid attach process for thermal management and multi-surface compliant heat removal A multi-surface compliant heat removal process includes: identifying one or more components to share a heat rejecting device, applying non-adhesive film to the one or more components, identifying a primary component of the one or more components, and applying phase ... | 05/10/2011 |
| 7927912 | Method of forming a sputtering target A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium seleni... | 04/19/2011 |
