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| Number | Title | Issue Date |
| 7384810 | Image display device and method for manufacturing the same Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-cr... | 06/10/2008 |
| 7335542 | Semiconductor device with mushroom electrode and manufacture method thereof A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed ... | 02/26/2008 |
| 7329883 | Electron beam lithography device and drawing method using electron beams In an electron beam lithography apparatus, when a plotting pattern is an isolated fine pattern, an exposure energy upon plotting lacks. In the prior art set forth above, dimension dependent exposure energy correction is performed as a measure, however, a problem is ... | 02/12/2008 |
| 7316958 | Masks for fabricating semiconductor devices and methods of forming mask patterns Masks for fabricating a semiconductor device and methods of forming mask patterns are provided which are capable of enhancing the breakdown voltage of the fabricated semiconductor device by accurately correcting a line width pattern error of a semiconductor substrat... | 01/08/2008 |
| RE39913 | Method to control gate CD The invention is a process for reducing variations in CD from wafer to wafer. It begins by increasing all line widths in the original pattern data file by a fixed amount that is sufficient to ensure that all lines will be wider than the lowest acceptable CD value. U... | 11/06/2007 |
| 7238624 | System and method for manufacturing semiconductor devices using a vacuum chamber The present disclosure relates generally to the manufacturing of semiconductor devices, and more particularly to semiconductor manufacturing using a vacuum chamber. In one example, a method for semiconductor manufacturing includes: providing a photoresist layer for ... | 07/03/2007 |
| 7223643 | Method of manufacturing a semiconductor device Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation process... | 05/29/2007 |
| 7223645 | Semiconductor device with mushroom electrode and manufacture method thereof A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed ... | 05/29/2007 |
| 7223696 | Methods for maskless lithography General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ... | 05/29/2007 |
| 7157319 | Method of patterning a thin film transistor that includes simultaneously forming a gate electrode and a pixel electrode A high-precision patterning is conducted with a half-tone resist thickness being prevented from varying due to the presence/absence of a base film. A transmitting portion and two kinds of semi-transmitting portions, providing different quantities of transmitted ligh... | 01/02/2007 |
| 7125757 | Method of manufacturing an array substrate for a liquid crystal display device An advantage of the present invention is to provide a method of manufacturing an array substrate for a liquid crystal display device in which a mask that has double slits in it is used in the photolithographic masking process for the pixel electrode to reduce the di... | 10/24/2006 |
| 7037791 | Application of single exposure alternating aperture phase shift mask to form sub 0.18 micron polysilicon gates In accordance with the objects of this invention, a new method of fabricating a polysilicon gate transistor is achieved. An alternating aperture phase shift mask (AAPSM) is used to pattern polysilicon gates in a single exposure without a trim mask. A semiconductor s... | 05/02/2006 |
| 7005363 | Method of forming a semi-insulating region A semiconductor substrate is provided, and at least one first mask is formed above the semiconductor substrate. The first mask has a plurality of thicknesses and blocks at least one semi-insulating region. A second mask is thereafter formed on a surface of the semic... | 02/28/2006 |
| 6998316 | Method for fabricating read only memory including a first and second exposures to a photoresist layer A fabrication method for a read only memory provides a substrate having a memory cell region and a periphery circuit region. A memory cell region has a memory cell array and the periphery circuit region has transistors. A precise layer having a plurality of first op... | 02/14/2006 |
| 6992015 | Pattern formation method After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that... | 01/31/2006 |
| RE38901 | Manufacturing methods of liquid crystal displays An ITO (indium tin oxide) layer and a negative photoresist are deposited sequentially on the substrate 100 having a gate wire, a storage wire, a data wire and a storage electrode. The negative photoresist is developed through front exposure and the ITO layer is etch... | 11/29/2005 |
| 6946668 | Electron beam lithography device and drawing method using electron beams In an electron beam lithography apparatus, when a plotting pattern is an isolated fine pattern, an exposure energy upon plotting lacks. In the prior art set forth above, dimension dependent exposure energy correction is performed as a measure, however, a problem is ... | 09/20/2005 |
| 6946666 | Position detection device, apparatus using the same, exposure apparatus, and device manufacturing method using the same An exposure apparatus for irradiating exposure light onto a surface of an object to be exposed applied with a resist to form a pattern on the surface, wherein near-field light is used as the exposure light. The apparatus includes an alignment system for performing a... | 09/20/2005 |
| 6933247 | Method for forming a minute pattern and method for manufacturing a semiconductor device using the same A method for forming a minute pattern includes forming a mask layer on an object being patterned. The mask layer is patterned to form a first mask pattern having a first width larger than a predetermined width. The first mask pattern is thermally treated to form a s... | 08/23/2005 |
| 6913989 | Method of exposing a semiconductor integrated circuit including device regions and global routing region In a semiconductor integrated circuit device including a plurality of semiconductor devices formed on a substrate, the principal plane of the substrate is partitioned into a plurality of device regions and into a plurality of routing regions each crossing a boundary... | 07/05/2005 |
| 6908854 | Method of forming a dual-layer resist and application thereof A method of forming a dual-layer resist and application thereof. With respect to the method of forming a dual-layer resist, first, a patterned first resist layer is formed on a substrate. Next, the first resist layer is cured so that the first resist layer does not ... | 06/21/2005 |
| 6900069 | Method of fabricating surface-emission type light-emitting device, surface-emitting semiconductor laser, method of fabricating the same, optical module and optical transmission device A method of fabricating a surface-emission type light-emitting device which emits light in a direction perpendicular to a semiconductor substrate, includes the following steps (a) to (e). (a) A step of forming a column-shaped section by etching at least a part of a ... | 05/31/2005 |
| 6900141 | Method of forming a resist pattern and fabricating tapered features A resist pattern for fabricating a microelectronic device is irradiated with an energy beam, raising the glass transition temperature of the upper parts of the resist pattern, then baked, causing a transition to a glassy state in lower parts of the resist pattern, w... | 05/31/2005 |
| 6869899 | Lateral-only photoresist trimming for sub-80 nm gate stack The invention relates generally to lithographic patterning of very small features. In particular, the invention relates generally to patterning of semiconductor circuit features smaller than lithographically defined using either conventional optical lithography or n... | 03/22/2005 |
| 6841399 | Method of manufacturing mask and method of manufacturing semiconductor integrated circuit device The manufacturing time of a mask is shortened. In a defect inspection of a mask having a light-shielding portion composed of a resist film, the presence or absence of defects, such as burr and film loss of a resist pattern on the mask, and foreign matters, etc. is i... | 01/11/2005 |
| 6841488 | Pattern formation method A resist film is formed from a chemically amplified resist material including a base polymer having a protecting group released by a function of an acid, an acrylic compound and an acid generator that generates an acid when irradiated with light. The resist film is ... | 01/11/2005 |
| 6841465 | Method of forming dual damascene pattern in semiconductor device Disclosed is a method of forming the dual damascene pattern in the semiconductor device. After forming the trench, a photoresist pattern in which a via hole region is defined is formed by exposure and development processes in a state that a photoresist is thinly coa... | 01/11/2005 |
| 6828167 | Method for manufacturing a thin film transistor for a liquid crystal display Disclosed is a thin film transistor (TFT) for a liquid crystal display (LCD) and a method for manufacturing the same that allows the number of photomasks used in a photolithography process to be decreased as compared to conventional methods. A passivation film is fo... | 12/07/2004 |
| 6815347 | Method of forming a reflective electrode The present invention provides a method of forming a TFT and a reflective electrode having recesses or projections with reduced manufacturing cost and a reduced number of manufacturing steps, and provides a liquid crystal display device to which the method is applie... | 11/09/2004 |
| 6800551 | Chemical amplification type photoresist composition, method for producing a semiconductor device using the composition, and semiconductor substrate To provide a chemical amplification type positive photoresist composition suited to resist patterning of a substrate presenting surface step differences, a method for manufacturing the semiconductor device employing this composition, and a semiconductor substrate. I... | 10/05/2004 |
| 6780781 | Method for manufacturing an electronic device A method for manufacturing an electronic device is provided. In one example of the method, the method prevents deformation of a resist mask caused by the irradiation of exposure light. The resist mask has a resist as an opaque element, and can afford mask patterns u... | 08/24/2004 |
| 6767773 | Method of Production of a thin film type semiconductor device having a heat-retaining layer An operating semiconductor layer is formed in such a manner that amorphous silicon layer is formed to be shaped so that it has a wide region and a narrow region and the narrow region is connected to the wide region at a position asymmetric to the wide region, and th... | 07/27/2004 |
| 6767799 | Laser beam irradiation method A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is fo... | 07/27/2004 |
| 6764964 | Method for forming patterns of a semiconductor device A method for forming patterns of a semiconductor device is disclosed which inhibits collapse of photoresist patterns in photoresist pattern-forming processes of the semiconductor device by forming micro-bends in an anti-reflective film to increase the contact area b... | 07/20/2004 |
| 6759351 | Method for eliminating development related defects in photoresist masks Polymer blobs that are development related defects are substantially eliminated in patterned photoresist masks by a heat treatment of the wafer performed at a development step in two different manners according to the present invention. In the first method, after th... | 07/06/2004 |
| 6746904 | Electronic devices comprising thin film transistors The invention provides a method of manufacturing an electronic device including a vertical thin film transistor. A layer (8) of semiconductor material is provided over an insulated gate electrode (2). A negative resist (14) is used to define sou... | 06/08/2004 |
| 6737338 | Pattern forming method for a display device A pattern forming method of the present invention for forming a predetermined pattern on a photosensitive resin film by (i) layering the photosensitive resin film on an inorganic thin film with which a plastic substrate is coated and (ii) exposing the photosensitive... | 05/18/2004 |
| 6716741 | Method of patterning dielectric layer with low dielectric constant The invention relates to a method for directly patterning a low-k dielectric layer by a high energy flow without using any photoresist layer, so that the exposed portion of the low-k dielectric layer is cured and becomes insoluble to the developing solution. The une... | 04/06/2004 |
| RE38466 | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device A method of manufacturing an active matrix substrate is provided that uses a technique of transferring a thin film device. In forming thin film transistors and pixel electrodes on an original substrate before transfer, an insulator film such as an interlayer insulat... | 03/16/2004 |
| 6664194 | Photoexposure method for facilitating photoresist stripping There is first provided a substrate 10 and a target layer 12. There is then formed upon the target layer a patterned positive photoresist layer 14. There is then processed the target layer while employing the patterned positive photoresist layer as a mask... | 12/16/2003 |
