Did You Know...
...that the inventor of the electric motor was a blacksmith named Thomas Davenport? Described as "a brilliantly unsuccessful inventor", Davenport invented the first rotary electric motor. In 1836 he headed out -- on foot -- from his Vermont home to file a patent application at the Patent Office in Washington, D.C. By the time he got there, he had squandered away his money and couldn't afford the $30 filing fee so he turned around and went home. When he later mailed in his application with money he'd raised, the Patent office was destroyed in a fire. He did finally get credit for his invention on Feb. 5, 1837.
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| Number | Title | Issue Date |
| 4132586 | Selective dry etching of substrates Magnesium oxide is deposited on a substrate as a mask with a pattern of openings which exposes a corresponding pattern of a surface of a substrate which is to be subjected to dry etching. In a specific application, the magnesium oxide mask is employed to ... | 01/02/1979 |
| 4114254 | Method for manufacture of a semiconductor device A semiconductor device and method of making the same is disclosed having a surface passivation film of a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms. The polycrystalline silicon layer is locally electrically insulated by ... | 09/19/1978 |
| 4081315 | Cermet etch technique An etching process for patterning cermet thin film resistors includes the provision of a layer of molybdenum over the cermet layer to provide a good adherent surface for a photoresist layer subsequently deposited thereon. After the photoresist and molybde... | 03/28/1978 |
| 4080245 | Process for manufacturing a gallium phosphide electroluminescent device When gallium phosphide is etched with hot phosphoric acid from the surface of a crystal having a (1 1 1) plane, the etched surface becomes a flat and smooth plane inclined at an angle of 45° to 55° to the (1 1 1) plane. Accordingly, when an electrolumin... | 03/21/1978 |
| 4062707 | Utilizing multiple polycrystalline silicon masks for diffusion and passivation A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first ... | 12/13/1977 |
| 4053350 | Methods of defining regions of crystalline material of the group III-V compounds A thin coating of carbon is used as a mask to define regions of a crystalline material of the group III-V compounds. A carbon mask is coated on portions of a surface of a substrate and the masked substrate contacted with the group III-V material to deposi... | 10/11/1977 |
| 4047286 | Process for the production of semiconductor elements A process for the production of semiconductor elements is set forth which includes metallizing a side of a large-area semiconductor wafer, having at least two zones of differing conductivity types, applying a soft-solder plate to the metallized side of sa... | 09/13/1977 |
| 4042726 | Selective oxidation method A method for manufacturing a semiconductor device wherein semiconductor material is selectively removed from a principal surface of a semiconductor substrate having at least one semiconductor layer formed thereon to provide a groove that extends through s... | 08/16/1977 |
| 4037308 | Methods for making transistor structures In one embodiment, an extremely short channel FET is made by forming a metal layer over a wafer, depositing silicon dioxide over part of the metal layer, oxidizing the exposed metal, controllably etching a portion of the silicon dioxide to expose a small ... | 07/26/1977 |
| 4037307 | Methods for making transistor structures In one embodiment, an extremely short channel FET is made by forming a metal layer over a wafer, depositing silicon dioxide over part of the metal layer, oxidizing the exposed metal, controllably etching a portion of the silicon dioxide to expose a small ... | 07/26/1977 |
| 3998675 | Method of doping a semiconductor body A method of doping a semiconductor body comprises applying to a surface of the semiconductor body a layer through which the doping material can diffuse and provide the layer with a reducing agent to reduce the doping material to its elemental form at area... | 12/21/1976 |
| 3988823 | Method for fabrication of multilayer interconnected microelectronic devices having small vias therein Vias or feedthroughs in the order of 0.5 mil diameter or less, for interlayer communication in multilevel interconnected microelectronics, such as large scale integration of active devices and circuits on a wafer, are formed by pyrolytically deposited sil... | 11/02/1976 |
