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| Number | Title | Issue Date |
| 7981817 | Method for manufacturing semiconductor device using multiple ion implantation masks A production method for a semiconductor device includes providing a semiconductor substrate having semiconductor layer of a first conductivity type formed on a surface thereof; forming a first mask so as to cover a predetermined region of the semiconductor layer; (c... | 07/19/2011 |
| 7439187 | Grayscale reticle for precise control of photoresist exposure A method of fabricating a grayscale reticule includes preparing a quartz substrate; depositing a layer of silicon-rich oxide on the quartz substrate; depositing a layer of silicon nitride as an oxidation barrier layer on the silicon-rich oxide layer; depositing and ... | 10/21/2008 |
| 7425508 | Liquid crystal display device and fabricating method thereof, and thin film patterning method applied thereto A liquid crystal display device, including: a gate line on a substrate; a data line crossing the gate line with a gate insulating film therebetween to define a pixel area; a thin film transistor connected to the gate line and the data line; a semiconductor pattern w... | 09/16/2008 |
| 7407890 | Patterning sub-lithographic features with variable widths A method of processing a substrate of a device comprises the as following steps. Form a cap layer over the substrate. Form a dummy layer over the cap layer, the cap layer having a top surface. Etch the dummy layer forming patterned dummy elements of variable widths ... | 08/05/2008 |
| 7407824 | Guard ring for improved matching A semiconductor manufacturing method comprises forming a leveling guard ring defining an interior area into which are fabricated one or more devices. In certain embodiments two or more matched devices, such as in a common centroid layout, are fabricated in the inter... | 08/05/2008 |
| 7384874 | Method of forming hardmask pattern of semiconductor device A method of forming a hardmask pattern over a semiconductor device semiconductor device includes forming a first hardmask layer over a semiconductor substrate. First and second structures are formed over the first hardmask layer, the first and second structures form... | 06/10/2008 |
| 7381663 | Method of fabricating a surface shape recognition sensor A structure (113b) which includes an overhang and a support portion supporting substantially the center of the overhang, and in which the area of the support portion is smaller than the area of the overhang in the two-dimensional direction of an upper ... | 06/03/2008 |
| 7381654 | Method for fabricating right-angle holes in a substrate A method is disclosed for forming right-angle contact/via holes for semiconductor devices. A device is provided on a substrate and covered with a first dielectric layer. A second dielectric layer having an etch rate different from that of the first layer is provided... | 06/03/2008 |
| 7381644 | Pulsed PECVD method for modulating hydrogen content in hard mask A method for forming a PECVD deposited ashable hardmask (AHM) with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks having the property of high selectivity of the hard mask film to the underlying... | 06/03/2008 |
| 7375018 | Method of manufacturing semiconductor device Etching is performed on an insulating layer 23 and a conductive layer 32 with a photoresist 41 as the mask, to form an opening 51 in the conductive layer 32. After removing the photoresist 41, another insulating layer 24 | 05/20/2008 |
| 7368362 | Methods for increasing photo alignment margins Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines at the periphery of the memory device are formed at an angle and are ... | 05/06/2008 |
| 7368392 | Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode A method of etching metals and/or metal-containing compounds using a plasma comprising a bromine-containing gas. In one embodiment, the method is used during fabrication of a gate structure of a field effect transistor having a titanium nitride gate electrode, an ul... | 05/06/2008 |
| 7365022 | Additive printed mask process and structures produced thereby A digital lithographic process first deposits a mask layer comprised of print patterned mask features. The print patterned mask features define gaps into which a target material may be deposited, preferably through a digital lithographic process. The target material... | 04/29/2008 |
| 7361569 | Methods for increasing photo-alignment margins Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines at the periphery of the memory device are formed at an angle and are ... | 04/22/2008 |
| 7354523 | Methods for sidewall etching and etching during filling of a trench A method for sidewall etching includes providing a substrate having a trench defined therein, with the trench having fill material disposed over a bottom thereof, along a sidewall thereof, and at the trench opening. The fill material along the sidewall of the trench... | 04/08/2008 |
| 7354846 | Submount substrate for mounting light emitting device and method of fabricating the same A submount substrate for mounting a light emitting device and a method of fabricating the same, wherein since a submount substrate for mouthing a light emitting device in which a Zener diode device is integrated can be fabricated by means of a silicon bulk micromach... | 04/08/2008 |
| 7354808 | Resist composition and method for manufacturing semiconductor device using the same An object of the invention is to provide a resist composition which is possible to form a film by using a drawing means and which functions as a protective film used at the time of etching, adding impurities, or the like. In addition, an object is also to provide a ... | 04/08/2008 |
| 7348280 | Method for fabricating and BEOL interconnect structures with simultaneous formation of high-k and low-k dielectric regions A method for fabricating and back-end-of-line (BEOL) metalization structures includes simultaneous high-k and low-k dielectric regions. An interconnect structure includes a first inter-level dielectric (ILD) layer and a second ILD layer with the first ILD layer unde... | 03/25/2008 |
| 7341893 | Structure and method for thin film device Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel sp... | 03/11/2008 |
| 7335524 | Method of manufacturing a thin film transistor array panel A method for manufacturing a flexible display, includes forming a gate line including a plurality of gate electrodes with a first interval on a substrate having a coefficient of thermal expansion, sequentially depositing both a gate insulating layer covering the gat... | 02/26/2008 |
| 7329936 | Mask for sequential lateral solidification and crystallization method using thereof A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from ea... | 02/12/2008 |
| 7312138 | Semiconductor device and method of manufacture thereof A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate electrode and containing a dopant and arranged such that the gate electrode i... | 12/25/2007 |
| 7288476 | Controlled dry etch of a film The controlled etch into a substrate or thick homogeneous film is accomplished by introducing a sacrificial film to gauge the depth to which the substrate/thick film has been etched. Optical endpointing the etch of the sacrificial film on the etch stop layer allows ... | 10/30/2007 |
| 7282403 | Temperature stable metal nitride gate electrode An integrated circuit is provided including an FET gate structure formed on a substrate. This structure includes a gate dielectric on the substrate, and a metal nitride layer overlying the gate dielectric and in contact therewith. This metal nitride layer is charact... | 10/16/2007 |
| 7282461 | Phase-shifting mask and semiconductor device Disclosed is a phase-shifting mask having a pattern comprising a plurality of substantially transparent regions and a plurality of substantially opaque regions wherein the mask pattern phase-shifts at least a portion of incident radiation and wherein the phases are ... | 10/16/2007 |
| 7253114 | Self-aligned method for defining a semiconductor gate oxide in high voltage device area A method is provided for forming at least three devices with different gate oxide thicknesses and different associated operating voltages, in the same integrated circuit device. The method includes forming a plurality of gate oxides with different thicknesses in hig... | 08/07/2007 |
| 7253012 | Guard ring for improved matching A semiconductor manufacturing method comprises forming a leveling guard ring defining an interior area into which are fabricated one or more devices. In certain aspects, two or more matched devices, such as in a common centroid layout, are fabricated in the interior... | 08/07/2007 |
| 7247247 | Selective etching method A selective etching method with lateral protection function is provided. The steps includes: (a) providing a substrate; (b) forming a plurality of tunnels; (c) forming a lateral strengthening structure at a peripheral wall of the tunnels; (d) removing a bottom porti... | 07/24/2007 |
| 7241683 | Stabilized photoresist structure for etching process A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with w... | 07/10/2007 |
| 7220660 | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser (110) for generating a plur... | 05/22/2007 |
| 7214573 | Method of manufacturing a semiconductor device that includes patterning sub-islands A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The su... | 05/08/2007 |
| 7214324 | Technique for manufacturing micro-electro mechanical structures A technique for manufacturing a micro-electro mechanical structure includes a number of steps. Initially, a cavity is formed into a first side of a handling wafer, with a sidewall of the cavity forming a first angle greater than about 54.7 degrees with respect to a ... | 05/08/2007 |
| 7214629 | Strain-silicon CMOS with dual-stressed film A semiconductor device has an NMOS portion and a PMOS portion. A first stress layer overlies a first channel to provide a first stress type to the channel and a first modified stress layer is formed from a portion of the first stress layer overlying a second channel... | 05/08/2007 |
| 7205241 | Method for manufacturing semiconductor device with contact body extended in direction of bit line Methods for manufacturing semiconductor devices with contact bodies extended in a direction of a bit line to increase the contact area between a contact body and a storage electrode is provided. In one aspect a method includes forming gate lines on a semiconductor s... | 04/17/2007 |
| 7195974 | Method of manufacturing ferroelectric film capacitor A method of manufacturing a ferroelectric film capacitor includes forming a platinum film used as an electrode material over a whole surface of a silicon substrate, batch-etching the platinum film to form opposite electrodes that serve as a pair of capacitor electro... | 03/27/2007 |
| 7166498 | Thin film transistor array substrate and manufacturing method of the same A thin film transistor array substrate has a gate electrode of the thin film transistor, a gate line connected to the gate electrode, and a gate pad connected to the gate line; a source/drain pattern including a source electrode and a drain electrode of the thin fil... | 01/23/2007 |
| 7153778 | Methods of forming openings, and methods of forming container capacitors A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking lay... | 12/26/2006 |
| 7148090 | Method of fabricating a TFT device formed by printing A thin-film transistor for an active matrix display is fabricated using printing means, such as a gravure offset printer. First and second pattern layers (251, 252; 30) are formed on a layer structure (4) wherein at ... | 12/12/2006 |
| 7144791 | Lamination through a mask The present invention is a process for transfer of a pattern of material from a donor substrate to a receiver substrate by lamination. The pattern of the transferred material is defined by an aperture in a mask interposed between the donor and receiver during lamina... | 12/05/2006 |
| 7122455 | Patterning with rigid organic under-layer For patterning an IC (integrated circuit) material, a rigid organic under-layer is formed over the IC material, and the rigid organic under-layer is patterned to form a rigid organic mask structure. In addition, the rigid organic mask structure is trimmed to lower a... | 10/17/2006 |
