Did You Know...
...that the inventor of the electric motor was a blacksmith named Thomas Davenport? Described as "a brilliantly unsuccessful inventor", Davenport invented the first rotary electric motor. In 1836 he headed out -- on foot -- from his Vermont home to file a patent application at the Patent Office in Washington, D.C. By the time he got there, he had squandered away his money and couldn't afford the $30 filing fee so he turned around and went home. When he later mailed in his application with money he'd raised, the Patent office was destroyed in a fire. He did finally get credit for his invention on Feb. 5, 1837.
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| Number | Title | Issue Date |
| 4021836 | Inverted heterojunction photodiode An inverted heterojunction photodiode for use as a laser detector sensitive to the 8 - 14 μm portion of the infrared spectrum and operable above 77° K. The diode structure comprises a PbTe substrate, a first buffer layer of a Pb.90 Sn.10... | 05/03/1977 |
| 4021833 | Infrared photodiode An improved lead tin telluride Schottky barrier photodiode includes a lead telluride -- lead tin telluride heterojunction structure to increase zero bias resistance.... | 05/03/1977 |
| 4008106 | Method of fabricating III-V photocathodes A method of fabricating high performance transmission mode negative elect affinity III-V compound photocathodes which eliminates recurrent liquid phase epitaxial growth surface defects and solves the "wipe-off" problem incurred during the termination of ... | 02/15/1977 |
| 4007473 | Target structures for use in photoconductive image pickup tubes and method of manufacturing the same In a target structure for use in a photoconductive image pickup tube, a P-type photoconductive film is deposited on an N-type transparent conductive film which is deposited on a transparent substrate. The P-type photosensitive film comprises first and sec... | 02/08/1977 |
| 4005468 | Semiconductor photoelectric device with plural tin oxide heterojunctions and common electrical connection A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film of electrically insulating material such as silicon dioxide of a substantial thickness on a main surface of a semiconductor s... | 01/25/1977 |
| 3995303 | Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector In an infrared photodetection apparatus a photodetector diode is used which comprises a heterojunction of two epitaxial layers of differing compositions of a ternary III-V semiconductive alloy, such that the outer layer will serve as a radiation-admitting... | 11/30/1976 |
| 3988172 | Annealing solar cells of InP/CdS Solar cells showing improved efficiency, amounting to about 14 percent for overall solar power conversion, are obtained by annealing InP/CdS solar cells in a slightly reducing atmosphere for about 15 minutes in a temperature range preferably from about 55... | 10/26/1976 |
| 3985918 | Method for manufacturing a target for an image pickup tube A target for an image pickup tube having high sensitivity, low dark current and low amount of lag-image is manufactured by forming a hetero-junction by the evaporation process. A first layer of ZnSx Se1.sub.-x or Znu Cd | 10/12/1976 |
| 3975211 | Solar cells and method for making same Solar cell elements are produced in accordance with the present invention in which a Cu2 S thin film is epitaxially formed on a CdS film by vacuum deposition in a heterojunction forming relationship. By a first method a Cu2 S layer o... | 08/17/1976 |
| 3972750 | Electron emitter and method of fabrication Transmission mode negative electron affinity gallium arsenide (GaAs) photthodes and dynodes with a technique for the fabrication thereof, utilizing multilayers of GaAs and gallium aluminum arsenide (GaAlAs) wherein the GaAs layers serve as the emitting l... | 08/03/1976 |
| 3966512 | Method of manufacturing targets of pickup tubes In a method of manufacturing the target of a pickup tube of the class wherein an N-type light transmitting conductive film is formed on a substrate, an N-type photoconductive film consisting of a group II-VI compound is formed on the N-type light transmit... | 06/29/1976 |
| 3959038 | Electron emitter and method of fabrication Transmission mode negative electron affinity gallium arsenide (GaAs) photthodes and dynodes and techniques for the fabrication thereof, utilizing multilayers of GaAs and gallium alluminum arsenide (GaAlAs) wherein the GaAs layer serves as the emitting la... | 05/25/1976 |
| 3959037 | Electron emitter and method of fabrication Transmission mode negative electron affinity gallium arsenide (GaAs) photthodes and dynodes with a technique for the fabrication thereof, utilizing multilayers of GaAs and gallium aluminum arsenide (GaAlAs) wherein the GaAs layers serve as the emitting l... | 05/25/1976 |
| 3941672 | Method of manufacturing light sensitive heterodiode A method of manufacturing a light sensitive heterodiode comprising an n-type transparent conductive layer and a p-type photoconductive layer provided thereon and forming rectifying contact therewith, in which before providing the p-type photoconductive la... | 03/02/1976 |
| 3932883 | Photocathodes A transmission photocathode comprising a crystal substrate transparent to the radiation to be detected, at least one epitaxial crystalline intermediate layer having a lattice constant close to that of the detector layer and transparent to the radiation to... | 01/13/1976 |
