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| Number | Title | Issue Date |
| 8110427 | Stacked-layered thin film solar cell and manufacturing method thereof A stacked-layered thin film solar cell and a manufacturing method thereof are provided. The stacked-layered thin film solar cell includes a front electrode layer, a stacked-layered light-absorbing structure, and a back electrode layer. The stacked-layered light-abso... | 02/07/2012 |
| 8105866 | Method of making PIN-type photo detecting element with a controlled thickness of window semiconductor layer A semiconductor photo detecting element includes a PIN-type photo detecting element and window semiconductor layer. The PIN-type photo detecting element has a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and a third semiconducto... | 01/31/2012 |
| 8093096 | Method of successive high-resistance buffer layer/window layer (transparent conductive film) formation for CIS based thin-film solar cell and apparatus for successive film formation for practicing the method of successive film formation A high-resistance buffer layer and a window layer (transparent conductive film) are successively formed by the MOCVD method to obtain the same output characteristics as in conventional film deposition by the solution deposition method and to simplify a film depositi... | 01/10/2012 |
| 8053271 | Device and method for managing radiation A device and method for managing terahertz and/or microwave radiation are provided. The device can comprise one or more field effect transistors (FETs) that each include at least one channel contact to a central region of the device channel of the FET. The frequency... | 11/08/2011 |
| 8012788 | Multi-stage formation of thin-films for photovoltaic devices A method is provided for producing a film of compound material. The method includes providing a substrate and depositing a film on the substrate. The deposited film has a first chemical composition that includes at least one first chemical element and at least one s... | 09/06/2011 |
| 7943416 | Local heterostructure contacts Disclosed is a novel method for creating local contacts in solar cells. In the method, a surface passivation that has been applied to a semiconductor substrate is locally etched away using a plasma process with the help of a thin stretched, elastic foil. If necessar... | 05/17/2011 |
| 7910396 | Three-stage formation of thin-films for photovoltaic devices A method for producing a film of compound semiconductor includes providing a substrate and a compound bulk material having a first chemical composition that includes at least one first chemical element and a second chemical element. A film is deposited on the substr... | 03/22/2011 |
| 7901975 | Continuous deposition process and apparatus for manufacturing cadmium telluride photovoltaic devices A continuous deposition process and apparatus for depositing semiconductor layers containing cadmium, tellurium or sulfur as a principal constituent on transparent substrates to form photovoltaic devices as the substrates are continuously conveyed through the deposi... | 03/08/2011 |
| 7892879 | Manufacture of cadmium mercury telluride on patterned silicon This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the sili... | 02/22/2011 |
| 7892880 | Method of manufacturing a photo-detector array device with ROIC monolithically integrated for laser-radar image signal A method of manufacturing a photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal. A detector array device, a photodiode and control devices for selecting and outputting a laser-rada... | 02/22/2011 |
| 7749800 | Photoelectric conversion device, image sensor, and method of manufacturing a photoelectric conversion device Provided is a photoelectric conversion device including: a semiconductor substrate (3) of a first conductivity type; a photoelectric conversion region (7) of a second conductivity type which is located in the semiconductor substrate (3), the sec... | 07/06/2010 |
| 7709287 | Method of forming a multijunction solar cell structure with a GaAs/AIGaAs tunnel diode A method of forming a multijunction solar cell includes providing a substrate, forming a first subcell by depositing a nucleation layer over the substrate and a buffer layer including gallium arsenide (GaAs) over the nucleation layer, forming a middle second subcell... | 05/04/2010 |
| 7709288 | Method for manufacturing multi-junction solar cell The present invention provides a method for manufacturing a multi-junction solar cell which makes it possible to implement a 4-junction solar cell and to increase the area of a device. A nucleus generation site is disposed on a substrate 2 made of a first sem... | 05/04/2010 |
| 7659137 | Structure capable of use for generation or detection of electromagnetic radiation, optical semiconductor device, and fabrication method of the structure A fabrication method of fabricating a structure capable of being used for generation or detection of electromagnetic radiation includes a forming step of forming a layer containing a compound semiconductor on a substrate at a substrate temperature below about 300° ... | 02/09/2010 |
| 7622322 | Method of forming an AlN coated heterojunction field effect transistor A passivation layer of AlN is deposited on a GaN channel HFET using molecular beam epitaxy (MBE). Using MBE, many other surfaces may also be coated with AlN, including silicon devices, nitride devices, GaN based LEDs and lasers as well as other semiconductor systems... | 11/24/2009 |
| 7615400 | Method for producing multijunction solar cell There is provided a method for producing a multijunction solar cell having four-junctions, the method allowing the area of a device to be increased. On a nucleation site formed on a substrate 2, is grown a semiconductor 2a comprising the same ma... | 11/10/2009 |
| 7553691 | Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell A method and a multijunction solar device having a high band gap heterojunction middle solar cell are disclosed. In one embodiment, a triple-junction solar device includes bottom, middle, and top cells. The bottom cell has a germanium (Ge) substrate and a buffer lay... | 06/30/2009 |
| 7528002 | Formation of nanowhiskers on a substrate of dissimilar material A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is esse... | 05/05/2009 |
| 7510904 | Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector The invention addresses the problem of creating a high-speed, high-efficiency photodetector that is compatible with Si CMOS technology. The structure consists of a Ge absorbing layer on a thin SOI substrate, and utilizes isolation regions, alternating n- and p-type ... | 03/31/2009 |
| 7420207 | Photo-detecting device and related method of formation A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epit... | 09/02/2008 |
| 7416909 | Methods for preserving strained semiconductor substrate layers during CMOS processing Oxidation methods, which avoid consuming undesirably large amounts of surface material in Si/SiGe heterostructure-based wafers, replace various intermediate CMOS thermal oxidation steps. First, by using oxide deposition methods, arbitrarily thick oxides may be forme... | 08/26/2008 |
| 7407831 | Method for producing organic solar cells or photo detectors A method for the production of organic solar cells or photodetectors, particularly based on organic polymers, comprising the following steps:—a first organic n- or p-conductive semiconductor layer is applied to an electrode, to the solid first organic semiconducto... | 08/05/2008 |
| 7345297 | Nitride semiconductor device A semiconductor device includes an active layer, an n-side contact layer, and a p-side contact layer. The nitride semiconductor device includes at least a first n-side layer, a second n-side layer, a third n-side layer and a fourth n-side layer formed in this order ... | 03/18/2008 |
| 7338826 | Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN b... | 03/04/2008 |
| 7320898 | Semiconductor laser device and method for fabricating the same A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of a first conductivity type; a multilayer film formed on the first semi... | 01/22/2008 |
| 7297589 | Transistor device and method A method for making a heterojunction bipolar transistor includes the following steps: forming a heterojunction bipolar transistor by depositing, on a substrate, subcollector, collector, base, and emitter regions of semiconductor material; the step of depositing the ... | 11/20/2007 |
| 7288430 | Method of fabricating heteroepitaxial microstructures An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microst... | 10/30/2007 |
| 7281334 | Mechanical scribing apparatus with controlling force of a scribing cutter A mechanical scribing apparatus with controlling force of a scribing cutter for adaptively separating each unit of thin film solar cells formed on a single substrate, which is always capable of performing a predetermined minute scribing of a work in accordance with ... | 10/16/2007 |
| 7279729 | Photodetector array A photodetector array made in monolithic form, in which transistors are formed in a semiconductor substrate coated with several metallization levels and photodiodes are formed above a last metallization level, each photodiode having an upper region of a first conduc... | 10/09/2007 |
| 7279698 | System and method for an optical modulator having a quantum well The optical modulator may include a strained layer of SiGe to confine carriers in a quantum well. The strained layer of SiGe may be doped with arsenic to provide electrons. The optical modulator may receive an optical signal and modulate the received signal by alter... | 10/09/2007 |
| 7250320 | Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire ... | 07/31/2007 |
| 7244630 | A1InGaP LED having reduced temperature dependence To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately eq... | 07/17/2007 |
| 7228865 | FRAM capacitor stack clean An embodiment of the invention is a method of cleaning a material stack 2 that has a hard mask top layer 8. The method involves cleaning the material stack 2 with a fluorine-based plasma etch. The method further involves rinsing the material sta... | 06/12/2007 |
| 7227173 | Semiconductor devices and methods A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between adjacent layers of the device;... | 06/05/2007 |
| 7220661 | Method of manufacturing a Schottky barrier rectifier A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 05/22/2007 |
| 7208338 | Method of manufacturing semiconductor light emitting device A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding... | 04/24/2007 |
| 7202542 | Semiconductor structure with metal migration semiconductor barrier layers and method of forming the same A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded... | 04/10/2007 |
| 7199391 | Device with quantum dot layer spaced from delta doped layer A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a layer of quantum dots disposed between adjacent layers of th... | 04/03/2007 |
| 7179677 | ZnO/Cu(InGa)Sesolar cells prepared by vapor phase Zn doping A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(I... | 02/20/2007 |
| 7148463 | Increased responsivity photodetector A photodetector includes a high-indium-concentration (H-I-C) absorption layer having a Group III sublattice indium concentration greater than 53%. The H-I-C absorption layer improves responsivity without decreasing bandwidth. The photoconversion structure that inclu... | 12/12/2006 |
