Did You Know...
...that the x-ray was discovered purely by accident? When German physicist Wilhelm Konrad von Roentgen was experimenting with cathode rays in 1895, he put an activated Crookes tube in a book and went out to lunch. When he returned, he discovered that a key that had also been placed in the book showed up as an image on the developed film!
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| Number | Title | Issue Date |
| 7426939 | Rotatable valve A rotatable valve allows the flow of a fluid to be switched between at least two different paths by rotating an element within the valve. Advantageously, both the housing of the valve and the rotatable element within the housing are formed of glass, making the valve... | 09/23/2008 |
| 7354874 | Variable exhaust static pressure management apparatus The present invention is directed to a semiconductor apparatus that enables in situ wet processing of semiconductor wafers, and prevents creation of a static pressure within the in situ wet processing system. The apparatus comprises multiple exhaust receptacles. Eac... | 04/08/2008 |
| 7253032 | Method of flattening a crystallized semiconductor film surface by using a plate First laser light is irradiated (energy density of 400 to 500 mj/cm2) to a semiconductor film 102 in an atmosphere containing oxygen in order to obtain a semiconductor film 102b having large depressions and projections on the surface.... | 08/07/2007 |
| 7200498 | System for remediating cross contamination in semiconductor manufacturing processes The present invention defines a system (100) for detecting copper contamination within a semiconductor manufacturing process. According to the present invention, a semiconductor wafer (102) is transferred (108) from a semiconductor manufacturing... | 04/03/2007 |
| 7135418 | Optimal operation of conformal silica deposition reactors Methods of forming conformal films that reduce the amount of metal-containing precursor and/or silicon containing precursor materials required are described. The methods increase the amount of film grown following each dose of metal-containing and/or silicon-contain... | 11/14/2006 |
| 7086410 | Substrate processing apparatus and substrate processing method A common solvent vapor supply source 41 and a common processing gas supply source 42 supply ozone gas and steam to a plurality of processing vessels 30A, 30B. Pressures in the processing vessels are regulated by adjusting the openings of ... | 08/08/2006 |
| 7026183 | Long-wavelength semiconductor light emitting device and its manufacturing method For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interr... | 04/11/2006 |
| 7018728 | Boron phosphide-based semiconductor device and production method thereof A boron phosphide-based semiconductor device includes a single crystal substrate having formed thereon a boron-phosphide (BP)-based semiconductor layer containing boron and phosphorus as constituent elements, where phosphorus (P) occupying the vacant lattice point (... | 03/28/2006 |
| 7008880 | Method for fabricating semiconductor integrated circuit device A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vic... | 03/07/2006 |
| 6949450 | Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber A system and sequential method for integrated, in-situ modification of a substrate and subsequent atomic layer deposition of a thin film onto the substrate in an evacuated chamber includes introducing at least one feed gas into the chamber; generating a plasma from ... | 09/27/2005 |
| 6921707 | Low temperature metal oxide coating formation A process for forming metal oxides, including mixed metal oxides, in a dilute vapor phase at a temperature below approximately 350 degrees Fahrenheit. The resulting novel oxides can be formed as dense films or coatings with very high strain-to-crack values, or as na... | 07/26/2005 |
| 6905963 | Fabrication of B-doped silicon film by LPCVD method using BCI3 and SiH4 gases A semiconductor device fabricating method for forming a boron doped silicon film includes the step of forming the boron doped silicon film on a substrate at an inner temperature of the reaction furnace ranging from about 460 to 600° C. or at an average velocity of ... | 06/14/2005 |
| 6867152 | Properties of a silica thin film produced by a rapid vapor deposition (RVD) process A rapid vapor deposition (RVD) method conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant, low wet etch rate, low film shrinkage and low stress hysteresis, appropriate for v... | 03/15/2005 |
| 6858508 | SOI annealing method A method for annealing an SOI in which two annealing steps are followed by a cooling step. During the second annealing step, the annealing temperature is from 993° C. to the melting point of silicon. During the cooling step, the cooling rate is not less than 0.12°... | 02/22/2005 |
| 6844260 | Insitu post atomic layer deposition destruction of active species Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolaye... | 01/18/2005 |
| 6809015 | Method for heat treatment of silicon wafers and silicon wafer According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperatu... | 10/26/2004 |
| 6806211 | Device and method for processing substrate A substrate processing apparatus consists of: a processing container; a first processing gas supply unit and a second processing gas supply unit, countering each other, prepared on both sides of a substrate-to-be-processed to the processing container; and a first sl... | 10/19/2004 |
| 6787377 | Determining method of thermal processing condition The invention is a method of determining a set temperature profile for a method of controlling respective substrate temperatures of a plurality of groups in accordance with respective corresponding set temperature profiles, in a method of heat processing a plurality... | 09/07/2004 |
| 6720274 | Method for fabricating a semiconductor device and a substrate processing apparatus A semiconductor device fabricating method includes the steps of loading one or more substrates into a boat disposed in a waiting room positioned next to a reaction furnace; vacuum-evacuating the waiting room to a vacuum state at a base pressure; loading the boat int... | 04/13/2004 |
| 6716287 | Processing chamber with flow-restricting ring A processing chamber with a flow-restricting ring is generally provided. In one embodiment, a processing chamber includes a chamber body, a lid assembly, a substrate support and a flow-restricting ring. The chamber body has sidewalls and a bottom. The lid assembly i... | 04/06/2004 |
| 6706585 | Chemical vapor deposition process for fabricating layered superlattice materials A first reactant gas is flowed into a CVD reaction chamber containing a heated integrated circuit substrate. The first reactant gas contains a first precursor compound or a plurality of first precursor compounds, and the first precursor compound or compounds decompo... | 03/16/2004 |
| 6689677 | CMOS circuit of GaAs/Ge on Si substrate A GaAs/Ge on Si CMOS integrated circuit is formed to improve transistor switching (propagation) delay by taking advantage of the high electron mobility for GaAs in the N-channel device and the high hole mobility for Ge in the P-channel device. A semi-insu... | 02/10/2004 |
| 6686281 | Method for fabricating a semiconductor device and a substrate processing apparatus A substrate processing apparatus for forming a boron doped silicon-germanium film on one or more substrates in a reaction furnace of a low pressure CVD apparatus uses a mixture gas of GeH4 and SiH4 as a reaction gas, and BCl3 | 02/03/2004 |
| 6645879 | Method of forming a silicon oxide layer of a semiconductor device and method of forming a wiring having the same Disclosed are methods for forming a silicon oxide layer of a semiconductor device capable of insulating between fine conductive patterns without causing a process failure, and for forming a wiring having the silicon oxide layer. After forming conductive p... | 11/11/2003 |
| 6596650 | Method for fabricating semiconductor integrated circuit device A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or... | 07/22/2003 |
| 6596641 | Chemical vapor deposition methods A chemical vapor deposition method includes providing a semiconductor substrate within a chemical vapor deposition chamber. At least one liquid deposition precursor is vaporized with a vaporizer to form a flowing vaporized precursor stream. The flowing va... | 07/22/2003 |
| 6573184 | Apparatus and method for depositing thin film on wafer using atomic layer deposition An atomic layer deposition (ALD) thin film deposition apparatus including a reactor in which a wafer is mounted and a thin film is deposited on the wafer, a first reaction gas supply portion for supplying a first reaction gas to the reactor, a second reac... | 06/03/2003 |
| 6569780 | Method for fabricating semiconductor integrated circuit device A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or... | 05/27/2003 |
| 6553332 | Method for evaluating process chambers used for semiconductor manufacturing A process chamber (12) is used for plasma etching of a wafer (21) disposed therein. A gas mixture supplied to the chamber eventually passes through openings (28) in a baffle plate (27). After the chamber has been cleaned, several test wafers are etched un... | 04/22/2003 |
| 6518202 | Method for fabricating semiconductor integrated circuit device A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or... | 02/11/2003 |
| 6422264 | Parallel divided flow-type fluid supply apparatus, and fluid-switchable pressure-type flow control method and fluid-switchable pressure-type flow control system for the same fluid supply apparatus A fluid supply apparatus with a plurality of flow lines branching out from one pressure regulator with the flow lines arranged in parallel and constructed so that opening or closing one flow passage will have no transient effect on the steady flow of the ... | 07/23/2002 |
| 6337224 | Method of producing silicon thin-film photoelectric transducer and plasma CVD apparatus used for the method In a method of manufacturing a silicon-based thin film photoelectric converter, a crystalline photoelectric conversion layer included in the photoelectric converter is deposited by plasma CVD under the following conditions: the temperature of the underlyi... | 01/08/2002 |
| 6333272 | Gas distribution apparatus for semiconductor processing A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to differ... | 12/25/2001 |
| 6303403 | Method for preparing gallium nitride phosphor A method for preparing a gallium nitride phosphor which is capable of emitting light at luminance increased to a degree sufficient to permit the phosphor to be practically used. A dopant compound containing elements reacted with H2 and gasified... | 10/16/2001 |
| 6296709 | Temperature ramp for vertical diffusion furnace An improved vertical diffusion furnace for semiconductor manufacturing processes is provided. Temperature and flow rate management enables more uniform temperature distribution across the wafer during ramp up and ramp down, thereby preventing wafer warp.... | 10/02/2001 |
| 6287989 | Method of treating a semiconductor wafer in a chamber using hydrogen peroxide and silicon containing gas or vapor A semiconductor wafer is treated in a chamber by introducing into the chamber a silicon-containing gas or vapor and hydrogen peroxide in vapor form. The silicon-containing gas or vapor is reacted with the hydrogen peroxide to form a short chain, inorganic... | 09/11/2001 |
| 6239041 | Method for fabricating semiconductor integrated circuit device A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or... | 05/29/2001 |
| 6162716 | Amorphous silicon gate with mismatched grain-boundary microstructure A method of forming an amorphous-Si (-Si) gate with two or more -Si layers with mismatched grains. The first embodiment involves forming two or more amorphous silicon layers over the gate dielectric. The amorphous silicon layers are formed i... | 12/19/2000 |
| 6140215 | Method and apparatus for low temperature deposition of CVD and PECVD films Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing appara... | 10/31/2000 |
| 6127271 | Process for dry etching and vacuum treatment reactor A process for dry etching a surface within a vacuum treatment reactor includes evacuating the reactor, generating a glow discharge within said reactor, feeding a reactive etching gas into said reactor and reacting said etching gas within said reactor, rem... | 10/03/2000 |
