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A method of swing on a swing is disclosed, in which a user positioned on a standard swing suspended by two chains from a substantially horizontal tree branch induces side to side motion by pulling alternately on one chain and then the other.
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| Number | Title | Issue Date |
| 6969670 | Selective growth method, and semiconductor light emitting device and fabrication method thereof At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growt... | 11/29/2005 |
| 6900069 | Method of fabricating surface-emission type light-emitting device, surface-emitting semiconductor laser, method of fabricating the same, optical module and optical transmission device A method of fabricating a surface-emission type light-emitting device which emits light in a direction perpendicular to a semiconductor substrate, includes the following steps (a) to (e). (a) A step of forming a column-shaped section by etching at least a part of a ... | 05/31/2005 |
| 6764888 | Method of producing nitride-based heterostructure devices A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges ... | 07/20/2004 |
| 6734033 | Ultraviolet light emitting diode A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of ... | 05/11/2004 |
| 6667187 | Semiconductor laser and method of manufacturing the same A semiconductor laser of present invention is constructed by an aluminium oxide (Al2 O3) film on an end surface opposed to a beam emission surface of the semiconductor laser, a silicon nitride (SiNx, or Si3 N | 12/23/2003 |
| 6617235 | Method of manufacturing Group III-V compound semiconductor The present invention provides for a method of manufacturing a Group III-V compound semiconductor, which grows a nitrogen-contained Group III-V compound semiconductor of the p-type conductivity, without performing any particular post-processing after grow... | 09/09/2003 |
| 6566162 | Method of producing Cu (In, Ga) (Se, S) 2 semiconductor film A method of producing a semiconductor film of Cu(MIII)(MVI)2 wherein MIII represents In1-x Gax where x is between 0 and 1 and MVI represents Sey S1-y where y is ... | 05/20/2003 |
| 6541297 | Method for fabricating semiconductor device and semiconductor device The method for fabricating a semiconductor device of this invention includes the step of: forming a first compound semiconductor layer by crystal growth on a surface of a semiconductor substrate which includes a plurality of crystal planes having differen... | 04/01/2003 |
| 6518086 | Processing approach towards the formation of thin-film Cu(In,Ga)Se2 A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains a... | 02/11/2003 |
| 6506618 | Method of forming a GaInNAs layer An undoped GaAs layer is formed on a GaAs substrate. Thallium is adhered to the undoped GaAs layer to a thickness of at least one atomic layer. After adhesion of thallium, GaInNAs is epitaxially grown on the undoped GaAs layer by chemical vapor deposition... | 01/14/2003 |
| 6482672 | Using a critical composition grading technique to deposit InGaAs epitaxial layers on InP substrates A method for growing Inx Ga1-x As epitaxial layer on a lattice mismatched InP substrate calls for depositing by organo-metallic vapor phase epitaxy, or other epitaxial layer growth technique, a plurality of discreet layers of InAs | 11/19/2002 |
| 6429103 | MOCVD-grown emode HIGFET buffer A method of fabricating an Emode HIGFET semiconductor device, and the device, is disclosed including epitaxially growing by metal-organic chemical vapor deposition an epitaxial buffer. The buffer includes a layer of short-lifetime gallium arsenide on a ga... | 08/06/2002 |
| 6348703 | Epitaxial wafer for infrared light-emitting device and light-emitting device using the same The present invention provides an epitaxial wafer comprising, on a p-type GaAs single-crystal substrate, a first p-type layer; a p-type cladding layer; a p-type active layer; and an n-type cladding layer, wherein the n-type cladding layer has a carrier co... | 02/19/2002 |
| 6303485 | Method of producing gallium nitride-based III-V Group compound semiconductor device The present invention proposes a method of producing a gallium nitride-based III-V Group compound semiconductor device. First, beryllium ions are diffused into the p-type layer of gallium nitride to increase hole mobility. Contacts are then added in subse... | 10/16/2001 |
| 6258617 | Method of manufacturing blue light emitting element A gallium-nitride-based blue light emitting element that is manufacturable through a small number of processes and a method of manufacturing the same are disclosed. A first gallium-nitride-based semiconductor layer containing impurities of a first conduct... | 07/10/2001 |
| 6235615 | Generation of low work function, stable compound thin films by laser ablation Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen envi... | 05/22/2001 |
| 6069020 | Method of manufacturing semiconductor light-emitting device In a method of manufacturing a semiconductor light-emitting device composed of a II-VI compound semiconductor in which at least more than one kind of elements of Zn, Be, Mg, Cd or Hg are used as a II-group element and at least more than one kind of elemen... | 05/30/2000 |
| 6046068 | Forming contacts on semiconductor substrates radiation detectors and imaging devices A method, suitable for forming metal contacts on a semiconductor substrate at positions for defining radiation detector cells, includes the steps of forming one or more layers of material on a surface of the substrate with openings to the substrate surfac... | 04/04/2000 |
| 5998304 | Liquid phase deposition method for growing silicon dioxide film on III-V semiconductor substrate treated with ammonium hydroxide A liquid phase deposition method involves the use of a supersaturated hydrofluosilicic acid aqueous solution for growing a silicon dioxide film at low temperature (30° C.-50° C.) on a III-V semiconductor, such as a gallium arsenide substrate. The silico... | 12/07/1999 |
| 5935324 | Apparatus and method for forming I-III-VI2 thin-film layers An apparatus for forming I-III-VI2 thin-film layers has a reaction chamber made of a carbon material in which a precursor for forming a I-III-VI2 thin-film layer and a vapor source of an element of group VI of the periodic table are ... | 08/10/1999 |
| 5930656 | Method of fabricating a compound semiconductor device A substrate for forming a compound semiconductor device is placed in a reaction chamber. An MOCVD method or a GS-MBE method is used to grow compound semiconductor layers on the substrate. The grown layers include, for example, a GaN buffer layer, an n-GaN... | 07/27/1999 |
| 5780322 | Method for growing a II-VI compound semiconductor layer containing cadmium and method for fabricating a semiconductor laser A method for growing a II-VI compound semiconductor layer containing Cd, such as Zn1-x Cdx Se, by a molecular beam epitaxy method is disclosed. During the growth, the ratio of the intensity of molecular beams of a group VI element to... | 07/14/1998 |
| 5730852 | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and sel... | 03/24/1998 |
| 5731031 | Production of films and powders for semiconductor device applications A process for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cux Sen, wherein x=1-2 and n=1-3; (2) Cu | 03/24/1998 |
| 5728231 | Precursor for semiconductor thin films and method for producing semiconductor thin films A precursor for manufacturing a semiconductor thin film in which an oxide thin film comprising at least one element as a dopant, selected from a group which consists of Groups IA, IIA, IIB, VA, and VB elements, and Groups IB and IIIA elements which are ma... | 03/17/1998 |
| 5695627 | Process for producing copper-indium-sulfur-selenium thin film and process for producing copper-indium-sulfur-selenium chalcopyrite crystal A process for producing a copper-indium-sulfur-selenium thin film which comprises subjecting an electro-conductive substrate to an electrodeposition treatment in the presence of copper sulfate, indium sulfate, selenium dioxide, and thiourea. A process for... | 12/09/1997 |
| 5674555 | Process for preparing group Ib-IIIa-VIa semiconducting films Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under... | 10/07/1997 |
| 5523022 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al Ga, Tl and mixtures the... | 06/04/1996 |
| 5490953 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures th... | 02/13/1996 |
| 5489372 | Process for producing light absorption layer of solar cell A process for producing a light absorption layer of a solar cell is disclosed, in which prior to heat-treatment, at least two of the following steps are performed in combination: (1) electrodeposition of a copper layer including selenium particles, (2) el... | 02/06/1996 |
| 5445847 | Method for preparing chalcopyrite-type compound A chalcopyrite-type compound, for instance, CuInS2 or CuGaS2, is prepared by subjecting a Group I-III oxide composition, containing at least one of the Group Ib element, for instance copper (Cu), and at least one of the Group IIIb el... | 08/29/1995 |
| 5433170 | Metal-organic chemical vapor-phase deposition process for fabricating light-emitting devices A metal-organic chemical vapor-phase deposition process for fabricating a layer of a Group II-VI compound semiconductor using an organometallic compound based on bis(cyclopentadienyl)magnesium having a vapor pressure in the range of from 1.3×10 Pa to 1.3... | 07/18/1995 |
| 5427716 | Compound semiconductors and semiconductor light-emitting devices using the same Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures thereof... | 06/27/1995 |
| 5421910 | Intermetallic compound semiconductor thin film An intermetallic compound semiconductor thin film comprises thin film made of the III-V group intermetallic compound InTlSb. Preferably, the thin film is grown by a vapor phase MOCVD method.... | 06/06/1995 |
| 5422304 | Method for producing a thin film, and a semiconductor device having the thin film Chalcopyrite compound semiconductor thin films represented by I-III-VI2-x Vx or I-III-VI2-x VIIx, and semiconductor devices having a I-III-VI2 /I-III-VI2-x Vx or I-III-VI2 | 06/06/1995 |
| 5413942 | Monolithic electronic structures The invention relates to a monolithic two- or three-dimensional multi-element electronic structure made of a ternary or multinary chalogenide and pnictide semiconductor. The invention further relates to a method for the production of monolithic electronic... | 05/09/1995 |
| 5399206 | Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates Ternary II-VI semiconductor films (16) are formed on a silicon substrate (12) by first depositing a monolayer of arsenic (14) or other Group V metal on a cleaned surface of the substrate. The ternary II-VI semiconductor film is then formed over the arseni... | 03/21/1995 |
| 5396862 | Method of manufacturing a compound semiconductor A compound semiconductor thin film is grown on a compound semiconductor surface, which is cleaned by irradiating the surface with gas containing at least hydrogen molecules and by efficiently removing contaminant on the surface at low temperature. A beam ... | 03/14/1995 |
| 5389572 | Process of making chalcopyrite structure semiconductor film A I-III-VI2 chalcopyrite semiconductor film containing a Group VII element as a dopant, and methods to produce such a chalcopyrite film are provided. The chalcopyrite film of the present invention has stoichiometric composition, and electrical ... | 02/14/1995 |
| 5356839 | Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization Enhanced quality thin films of Cuw (In,Gay)Sez for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cux Se on a substrate to ... | 10/18/1994 |
