Did You Know...
...that the Slinky toy was the result of a failed attempt by engineer Richard James to produce an antivibration device for ship instruments? His goal was to develop a spring that would instantaneously counterbalance the wave motion that rocks a ship at sea. Instead, he developed the Slinky.
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| Number | Title | Issue Date |
| 7432177 | Post-ion implant cleaning for silicon on insulator substrate preparation A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of th... | 10/07/2008 |
| 7368380 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device is disclosed in which a metallic deposit is stably formed on the anode side with small variation in film thickness, and plating is prevented on the cathode side without carrying out any additional processing on the ca... | 05/06/2008 |
| 7364987 | Method for manufacturing semiconductor device In a method of forming a semiconductor device, a copper diffusion-prevention layer is formed underneath a substrate. Impurity regions are formed on the surface of the substrate. A copper wiring is electrically connected to the impurity regions. The copper diffusion-... | 04/29/2008 |
| 7348249 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device reduces or prevents copper contamination. The method includes forming a gate electrode on a substrate; forming a first oxide layer on a front surface of the substrate including the gate electrode; depositing a nitrid... | 03/25/2008 |
| 7335575 | Semiconductor constructions and semiconductor device fabrication methods A method of fabricating a semiconductor device includes etching a substrate to form a recess, the substrate being formed on a backside of a semiconductor wafer, forming pores in the substrate in an area of the recess, and forming in the recess a material having a th... | 02/26/2008 |
| 7329152 | Universal serial bus hub and method of manufacturing same A universal serial bus hub (100, 900) includes a housing (110), a power port (210), a first universal serial bus port (120), and a second universal serial bus port (220). The housing includes a middle portion (112), a top po... | 02/12/2008 |
| 7273824 | Semiconductor structure and fabrication therefor A semiconductor structure and a method of fabrication there-for are provided. The semiconductor structure comprises a substrate, a dielectric layer disposed over the substrate, a hydrophilic material layer disposed over the dielectric layer, and a hardmask layer dis... | 09/25/2007 |
| 7268081 | Wafer-level transfer of membranes with gas-phase etching and wet etching methods Techniques for transferring a membrane from one wafer to another wafer to form integrated semiconductor devices. In one implementation, a carrier wafer is fabricated to include a membrane on one side of the carrier wafer. The membrane on the carrier wafer is then bo... | 09/11/2007 |
| 7253091 | Process for assembling three-dimensional systems on a chip and structure thus obtained A method for assembling an electronic system with a plurality of layers. Recesses in formed in one or more dielectric layers and electronic components are positioned within the recesses. One or more layers containing the components are placed on a host substrate con... | 08/07/2007 |
| 7250368 | Semiconductor wafer manufacturing method and wafer The present invention provides a method for manufacturing a semiconductor wafer capable of manufacturing a wafer without ring-like sag in an outer peripheral portion thereof when polishing an alkali etched wafer, and a wafer without the ring-like sag in an outer per... | 07/31/2007 |
| 7238591 | Heat removal in SOI devices using a buried oxide layer/conductive layer combination A method of forming a silicon-on-insulator substrate is disclosed, including providing a silicon substrate; depositing a first insulation layer over the silicon substrate; forming a conductive layer over the first insulation layer to a first structure; providing a s... | 07/03/2007 |
| 7235185 | Method of protecting wafer front pattern and method of performing double-sided process A wafer comprising a front surface and a back surface is provided. The wafer further includes a front pattern on the front surface, the front pattern having a plurality of holes. A low-viscosity fluid is formed on the front surface and filled into the holes. Followi... | 06/26/2007 |
| 7214574 | Heating treatment device, heating treatment method and fabrication method of semiconductor device To provide a method and a device for subjecting a film to be treated to a heating treatment effectively by a lamp annealing process, ultraviolet light is irradiated from the upper face side of a substrate where the film to be treated is formed and infrared light is ... | 05/08/2007 |
| 7189631 | Semiconductor device and manufacturing method thereof It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Fur... | 03/13/2007 |
| 7179738 | Semiconductor assembly having substrate with electroplated contact pads An apparatus comprising an insulating substrate (101) having first and second surfaces (101a, 101b) and a plurality of metal-filled vias (102) extending from the first to the second surface. The first and second surfaces hav... | 02/20/2007 |
| 7151026 | Semiconductor processing methods Semiconductor processing methods are described which can be used to reduce the chances of an inadvertent contamination during processing. In one implementation, a semiconductor wafer backside is mechanically scrubbed to remove an undesired material prior to forming ... | 12/19/2006 |
| 7144751 | Back-contact solar cells and methods for fabrication Methods for fabrication of emitter wrap through (EWT) back-contact solar cells and cells made by such methods. Certain methods provide for higher concentration of dopant in conductive vias compared to the average dopant concentration on front or rear surfaces, and p... | 12/05/2006 |
| 7141462 | Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof There are provided a substrate of a semiconductor device and a fabrication method thereof which suppress impurity from turning around from a glass or quartz substrate in fabrication steps of a TFT. An insulating film is deposited so as to surround the glass substrat... | 11/28/2006 |
| 7129138 | Methods of implementing and enhanced silicon-on-insulator (SOI) box structures Enhanced silicon-on-insulator (SOI) buried oxide (BOX) structures and methods are provided for implementing enhanced SOI BOX structures. An oxygen implant step is performed from a backside into a thinned silicon substrate layer. An anneal step forms thick buried oxi... | 10/31/2006 |
| 7118930 | Method for manufacturing a light emitting device A method for manufacturing a light emitting device includes (a) preparing a semiconductor element formed with a crystalline substrate, and a temporary element, the temporary element including a laser-transmissive substrate and a laser-dissociable layer formed on the... | 10/10/2006 |
| 7105451 | Method for manufacturing semiconductor device A resist pattern formed so as to expose a wafer edge region is used to expose an edge surface region of an Si support substrate by dry etching. Next, a conductive layer constituted as wirings by subsequent patterning is formed by sputtering. ... | 09/12/2006 |
| 7101792 | Methods of plating via interconnects Methods for filling high aspect ratio vias with conductive material. At least one high aspect ratio via is formed in the backside of a semiconductor substrate. The at least one via is closed at one end by a conductive element forming a conductive structure of the se... | 09/05/2006 |
| 7063992 | Semiconductor substrate surface preparation using high temperature convection heating A method of processing a semiconductor wafer includes utilizing a heated gas to heat at least one part of a semiconductor wafer by convection whereupon at least one contaminant is desorbed therefrom. A stream of cooling gas is caused to pass over the one part of the... | 06/20/2006 |
| 7041578 | Method for reducing stress concentrations on a semiconductor wafer by surface laser treatment including the backside A method for treating an area of a semiconductor wafer surface with a laser for reducing stress concentrations is disclosed. The wafer treatment method discloses treating an area of a wafer surface with a laser beam, wherein the treated area is ablated or melted by ... | 05/09/2006 |
| 7026223 | Hermetic electric component package An electric component package having a base and a lid, the base and lid defining a hermetically sealed cavity therebetween for accommodating an electric component. The base includes at least one conductive via extending therethrough, allowing control and/or input/ou... | 04/11/2006 |
| 7008820 | Chip scale package with open substrate A method for manufacturing an integrated circuit package comprises forming a substrate by forming a core layer with a through opening and vias. A first conductive layer is formed on the core layer covering the through opening and a second conductive layer is formed ... | 03/07/2006 |
| 7005304 | Micro-moving device and its manufacturing method A micro-transfer device for fine positioning is employed typically in recording and playback apparatus for recording disks. Voltage is stably supplied to an expandable element which displaces the position of a recording head by applying voltage. An end different fro... | 02/28/2006 |
| 6998282 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a ... | 02/14/2006 |
| 6972227 | Semiconductor processing methods, and methods of forming a dynamic random access memory (DRAM) storage capacitor Semiconductor processing methods are described which can be used to reduce the chances of an inadvertent contamination during processing. In one implementation, a semiconductor wafer backside is mechanically scrubbed to remove an undesired material prior to forming ... | 12/06/2005 |
| 6967145 | Method of maintaining photolithographic precision alignment after wafer bonding process A method of maintaining photolithographic precision alignment for a wafer after being bonded, wherein two cavities are formed at the rear surface of a top wafer at the position corresponding to alignment marks made on a bottom wafer. The depth of both cavities is de... | 11/22/2005 |
| 6963692 | Heat-treating methods and systems A method involves increasing a temperature of a workpiece over a first time period to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, the heating commencing within less time foll... | 11/08/2005 |
| 6949434 | Method of manufacturing a vertical semiconductor device A method of manufacturing a vertical semiconductor device includes preparing a semiconductor wafer which has a heavily doped semiconductor substrate and a lightly doped semiconductor layer disposed over the semiconductor substrate, forming a semiconductor element at... | 09/27/2005 |
| 6939785 | Process for manufacturing a semiconductor chip A process for manufacturing a semiconductor chip by dividing a semiconductor wafer having a plurality of streets formed in a lattice-like form on the front surface into individual semiconductor chips, and affixing an adhesive film for die bonding to the back surface... | 09/06/2005 |
| 6930023 | Semiconductor wafer thinning method, and thin semiconductor wafer In a method for thinning a semiconductor wafer by grinding a back surface of the semiconductor wafer in which semiconductor devices 2 are formed on its surface, the surface of the semiconductor wafer 1 is adhered to a support 4 via an adhesive l... | 08/16/2005 |
| 6924209 | Method for fabricating an integrated semiconductor component A method for the fabrication of an integrated semiconductor component, in which at least one isolation trench is formed, a first layer of a nonconductive material is applied by a nonconformal deposition method, and a second layer of a nonconductive material is appli... | 08/02/2005 |
| 6903012 | Sloped via contacts A sloped via contact is used to connect a contact on the front side of a wafer to a contact on the back side of the wafer. The walls of a small (less than 50-80 microns wide) via have typically been difficult to coat with metal. The present invention forms a small v... | 06/07/2005 |
| 6887775 | Process and apparatus for epitaxially coating a semiconductor wafer and epitaxially coated semiconductor wafer A process for epitaxially coating the front surface of a semiconductor wafer in a CVD reactor, the front surface of the semiconductor wafer being exposed to a process gas which contains a source gas and a carrier gas, and the back surface of the semiconductor wafer ... | 05/03/2005 |
| 6875672 | Method of manufacturing a semiconductor device with penetration electrodes that protrude from a rear side of a substrate formed by thinning the substrate A method for manufacturing a semiconductor device can prevent defective products resulting from a plating liquid when surfaces of protruded portions of penetration electrodes are subjected to plating. An organic insulation film (14) is formed on one surface o... | 04/05/2005 |
| 6849831 | Pulsed processing semiconductor heating methods using combinations of heating sources Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Hea... | 02/01/2005 |
| 6831000 | Semiconductor device manufacturing method The present invention comprises the steps of forming a bump metal film as a pattern having an opening portion on an area of a seed metal film that corresponds to a connecting pad of a semiconductor substrate, forming a through hole by etching the seed metal film, th... | 12/14/2004 |
