Did You Know...
...that two musicians were responsible for the invention of color print film? Fascinated by photography, Leopold Godowsky and Leopold Mannes worked together to produce an easy-to-use, practical color film. They worked full time as music teachers and gave concerts while experimenting during their off hours in Mannes' kitchen. Their success earned them full-time, well-paying jobs at Kodak and their efforts resulted in Kodachrome film, which was introduced in 1935.
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| Number | Title | Issue Date |
| 8168466 | Schottky diode and method therefor In one embodiment, a Schottky diode is formed on a semiconductor substrate with other semiconductor devices and is also formed with a high breakdown voltage and a low forward resistance. ... | 05/01/2012 |
| 8093094 | Blocking contacts for N-type cadmium zinc telluride A process for applying blocking contacts on an n-type CdZnTe specimen includes cleaning the CdZnTe specimen; etching the CdZnTe specimen; chemically surface treating the CdZnTe specimen; and depositing blocking metal on at least one of a cathode surface and an anode... | 01/10/2012 |
| 7985615 | Method of forming a carbon nanotube/nanowire thermo-photovoltaic cell The present invention relates to embodiments of TPV cell structures based on carbon nanotube and nanowire materials. One embodiment according to the present invention is a p-n junction carbon nanotube/nanowire TPV cell, which is formed by p-n junction wires. A secon... | 07/26/2011 |
| 7820473 | Schottky diode and method of manufacture A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends ... | 10/26/2010 |
| 7588958 | Schottky barrier diode and manufacturing method thereof To reduce a reverse leakage current in a Schottky barrier diode with achieving a lower forward voltage Vf and a smaller capacitance than in the related art, a Schottky barrier diode includes a semiconductor layer of a first conductivity type, a first electrode which... | 09/15/2009 |
| 7355260 | Schottky device and method of forming A conductive layer includes a first portion that forms a Schottky region with an underlying first region having a first conductivity type. A second region of a second conductivity type underlies the first region, where the second conductivity type is opposite the fi... | 04/08/2008 |
| 7300516 | Laser irradiation method and laser irradiation apparatus, and method for fabricating semiconductor device When a laser beam is radiated on a semiconductor film under appropriate conditions, the semiconductor film can be crystallized into single crystal-like grains connected in a scanning direction of the laser beam (laser annealing). The most efficient laser annealing c... | 11/27/2007 |
| 7291524 | Schottky-barrier mosfet manufacturing method using isotropic etch process A method of fabricating a transistor device for regulating the flow of electric current is provided wherein the device has Schottky-barrier metal source-drain contacts. The method, in one embodiment, utilizes an isotropic etch process prior to the formation of the m... | 11/06/2007 |
| 7282386 | Schottky device and method of forming A Schottky device having a plurality of unit cells, each having a Schottky contact portion, surrounded by a termination structure that causes depletion regions to form in a vertical and horizontal direction, relative to a surface of the device, during a reverse bias... | 10/16/2007 |
| 7259034 | Self-alignment manufacturing method of the microlens and the aperture using in optical devices The present invention discloses a self-alignment manufacturing method of a microlens and an aperture using in an optical device. The method manufactures the aperture and the circular opening in the opaque film on a transparent substrate, and utilizes the self-alignm... | 08/21/2007 |
| 7250666 | Schottky barrier diode and method of forming a Schottky barrier diode Disclosed is a silicon-on-insulator-based Schottky barrier diode with a low forward voltage that can be manufactured according to standard SOI process flow. An active silicon island is formed using an SOI wafer. One area of the island is heavily-doped with an n-type... | 07/31/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7220661 | Method of manufacturing a Schottky barrier rectifier A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 05/22/2007 |
| 7217953 | Technique for suppression of edge current in semiconductor devices A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted regi... | 05/15/2007 |
| 7217641 | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby More specifically, gallium nitride semiconductor layers may be fabricated by etching an underlying gallium nitride layer on a sapphire substrate, to define at least one post in the underlying gallium nitride layer and at least one trench in the underlying gallium ni... | 05/15/2007 |
| 7205569 | Thin film transistor with microlens structures A thin film transistor with a microlens. A metal gate is formed on a substrate. A gate dielectric covers the metal gate. A semiconductor layer is formed on the gate dielectric. Source/drain metal layers respectively overlap ends of the top surface of the semiconduct... | 04/17/2007 |
| 7199442 | Schottky diode structure to reduce capacitance and switching losses and method of making same A SiC Schottky barrier diode (SBD) is provided having a substrate and two or more epitaxial layers, including at least a thin, lightly doped N-type top epitaxial layer, and an N-type epitaxial layer on which the topmost epitaxial layer is disposed. Multiple epitaxia... | 04/03/2007 |
| 7195993 | Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocati... | 03/27/2007 |
| 7179726 | Laser processing apparatus and laser processing process A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. | 02/20/2007 |
| 7169634 | Design and fabrication of rugged FRED An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the re... | 01/30/2007 |
| 7101739 | Method for forming a schottky diode on a silicon carbide substrate A method for manufacturing a vertical Schottky diode with a guard ring on a lightly-doped N-type silicon carbide layer, including forming a P-type epitaxial layer on the N-type layer; implanting N-type dopants in areas of the P-type epitaxial layer to neutralize in ... | 09/05/2006 |
| 7095062 | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the no... | 08/22/2006 |
| 7091572 | Fast recovery diode with a single large area p/n junction A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periph... | 08/15/2006 |
| 7084475 | Lateral conduction Schottky diode with plural mesas A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the ... | 08/01/2006 |
| 7052945 | Short-channel Schottky-barrier MOSFET device and manufacturing method A MOSFET device and method of fabricating are disclosed. The present invention utilizes Schottky barrier contacts for source and/or drain contact fabrication within the context of a MOSFET device structure to eliminate the requirement for halo/pocket implants and sh... | 05/30/2006 |
| 7049630 | Electrode patterning in OLED devices An OLED device having pillars with a cross section that is wider on the top. The pillars structure a conductive layer during deposition into distinct portions located between the pillars and on the top of the pillars. In one embodiment, the grooves between the pilla... | 05/23/2006 |
| 7026701 | Schottky barrier photodetectors A Schottky barrier photodetector comprises a waveguide structure formed by a thin strip of material having a relatively high free charge carrier density, for example a conductor or certain classes of highly-doped semiconductor, surrounded by material having a relati... | 04/11/2006 |
| 7005356 | Schottky barrier transistor and method of manufacturing the same A schottky barrier transistor and a method of manufacturing the same are provided. The method includes forming a gate insulating layer and a gate on a substrate, forming a spacer on a sidewall of the gate, and growing a polycrystalline silicon layer and a monocrysta... | 02/28/2006 |
| 7002187 | Integrated schottky diode using buried power buss structure and method for making same An integrated Schottky diode and method of manufacture of such a diode is disclosed. In a first aspect, a Schottky diode comprises a semiconductor substrate. The semiconductor substrate includes an epitaxial layer (EPI) on the substrate region. The diode includes a ... | 02/21/2006 |
| 6949401 | Semiconductor component and method for producing the same A method for producing a semiconductor component with adjacent Schottky (5) and pn (9) junctions positions in a drift area (2, 10) of a semiconductor material. According to the method, a silicon carbide substrate doped with a first doping materi... | 09/27/2005 |
| 6927103 | Method and apparatus of terminating a high voltage solid state device Termination of a high voltage device is achieved by a plurality of discrete deposits of charge that are deposited in varying volumes and/or spacing laterally along a termination region. The manner in which the volumes and/or spacing varies also varies between differ... | 08/09/2005 |
| 6924218 | Sulfide encapsulation passivation technique A method for passivating a III-V material Schottky layer of a field effect transistor. The transistor has a gate electrode in Schottky contact with a gate electrode contact region of the Schottky layer. The gate electrode is adapted to control a flow of carriers bet... | 08/02/2005 |
| 6897133 | Method for producing a schottky diode in silicon carbide The invention concerns a method for making a vertical Schottky diode on a highly doped N-type silicon carbide substrate (1), comprising steps which consist in forming an N-type lightly doped epitaxial layer (2); etching out a peripheral trench at the a... | 05/24/2005 |
| 6838744 | Semiconductor device and manufacturing method thereof A semiconductor device and a manufacturing method therefor are provided, the semiconductor device having a good reverse recovery characteristic, and having no reduction in breakdown voltage because no defect occurs in the upper main surface of a Si substrate even wh... | 01/04/2005 |
| 6818468 | Method and apparatus for incorporating a low contrast interface and a high contrast interface into an optical device Methods and apparatuses for incorporating low contrast and high contrast interfaces in optical devices. In one embodiment an insulator is disposed proximate to a plurality of regions of a semiconductor including regions through which an optical beam is directed. Hig... | 11/16/2004 |
| 6770548 | Trench schottky rectifier A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift region of ... | 08/03/2004 |
| 6746971 | Method of forming copper sulfide for memory cell An organic memory cell made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer and passive layer. The controllably conductive media changes its imp... | 06/08/2004 |
| 6744105 | Memory array having shallow bit line with silicide contact portion and method of formation A core memory array having a plurality of charge trapping dielectric memory devices. The core memory array can include a substrate having a first semiconductor bit line and a second semiconductor bit line formed therein and a body region interposed between the first... | 06/01/2004 |
| 6710419 | Method of manufacturing a schottky device An improved Schottky device, having a low resistivity layer of semiconductor material, a high resistivity layer of semiconductor material and a buried dopant region positioned in the high resistivity layer utilized to reduce reverse leakage current. The low resistiv... | 03/23/2004 |
| 6613973 | Photovoltaic element, producing method therefor, and solar cell modules A photoelectric conversion layer 13, a transparent electrode layer 14, an insulating layer 15, and a back electrode layer 16 are successively formed in this order on a conductive substrate 11 having a through-hole 17 formed therein, and the transparent el... | 09/02/2003 |
