Class 438/916 - Autodoping control or utilization

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Art collection under 914 involving the regulation of self-induced
No. of patents: 35
Last issue date: 05/08/2007

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Number	Title	Issue Date
7214592	Method and apparatus for forming a semiconductor substrate with a layer structure of activated dopants Methods of forming semiconductor devices with a layered structure of thin and well defined layer of activated dopants, are disclosed. In a preferred method, a region in a semiconductor substrate is amorphized, after which the region is implanted with a first dopant ...	05/08/2007
6947012	Low cost electrical cable connector housings and cable heads manufactured from conductive loaded resin-based materials Electrical connector housings are formed of a conductive loaded resin-based material which provides superior protection from EMI and RFI by absorbing such interfering signals. The conductive loaded resin-based material comprises micron conductive powder(s), conducti...	09/20/2005
6838359	Suppression of n-type autodoping in low-temperature Si and SiGe epitaxy A method of manufacturing a semiconductor device, which method comprises the step of epitaxially growing a stack comprising an n-type doped layer of a semiconductor material followed by at least one further layer of a semiconductor material, the stack being grown in...	01/04/2005
6635556	Method of preventing autodoping A method of making a silicon-based electronic device is provided. The method includes, for example, the steps of forming a doped silicon layer on a surface of a substrate material and forming an undoped silicon capping layer on the doped silicon layer. Th...	10/21/2003
6599772	Solid-state pickup element and method for producing the same A solid-state pickup element achieves both improvement in sensitivity and reduction of pixel size and a method thereof, includes a first conductive type semiconductor area, which is formed at least so as to include the inside of the semiconductor substrat...	07/29/2003
6465333	Method of manufacturing a circuit When the temperature of a silicon substrate is increased, a first annealing gas which is mainly composed of argon or the like that does not react with said silicon substrate with a trace of oxygen added thereto, is supplied to the position of the silicon ...	10/15/2002
6232172	Method to prevent auto-doping induced threshold voltage shift A method to prevent threshold shifts in MOS transistors due to auto-doping from heavily doped polysilicon layers. Isolation regions are provided in a semiconductor substrate separating active areas. A gate oxide layer is formed over the surface of the sem...	05/15/2001
6162708	Method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer There is disclosed a method for producing an epitaxial silicon single crystal wafer comprising the steps of growing a silicon single crystal ingot wherein nitrogen is doped by Czochralski method, slicing the silicon single crystal ingot to provide a silic...	12/19/2000
6007624	Process for controlling autodoping during epitaxial silicon deposition A method for controlling the autodoping during epitaxial silicon deposition. First, the substrate (10) is cleaned to remove any native oxide. After being cleaned, the substrate (10) is transferred to the deposition chamber in an inert or vacuum atmosphere...	12/28/1999
5863832	Capping layer in interconnect system and method for bonding the capping layer onto the interconnect system The present invention provides an interconnect system. The interconnect system includes a substrate, a first dielectric layer deposited upon the substrate. The interconnect system further includes at least two electrically conductive interconnect lines fo...	01/26/1999
5811345	Planarization of shallow- trench- isolation without chemical mechanical polishing A new method for planarization of shallow trench isolation is disclosed by the wet etching and plasma etching, due to the surface sensitivity of SACVD O3 -TEOS that depends on substrate. The method described herein includes a pad oxide layer, a...	09/22/1998
5731626	Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby Diffusion of ion-implanted dopant is controlled by incorporating electrically inactive impurity in a semiconductor layer by at least one crystal growth technique....	03/24/1998
5648282	Autodoping prevention and oxide layer formation apparatus To form a MOS transistor with a LDD structure, the transistor is formed in a well region. There is formed a gate oxide layer on a silicon substrate and an N+ type poly-silicon layer serving as a gate electrode is formed on the gate oxide layer...	07/15/1997
5461002	Method of making diffused doped areas for semiconductor components Doped areas on semiconductor components are made by applying to a portion of the surface of a semiconductor substrate an oxide forming mask layer which contains dopant, said semiconductor substrate with the mask layer being heated to a temperature suffici...	10/24/1995
5318666	Method for via formation and type conversion in group II and group VI materials A method of forming an n-p junction in a body (44, 44a, 44b) formed of Group II and Group VI elements. The body (44, 44a, 44b) initially is of p-type conductivity characteristic, and a dry reactive etching process is employed for forming a via (60, 60a, 6...	06/07/1994
5256594	Masking technique for depositing gallium arsenide on silicon A process for forming GaAs on a silicon substrate with very low levels of unintended silicon doping. First, a dielectric layer of silicon dioxide, silicon nitride, or both is grown or deposited on the substrate. Next, a window is opened in the dielectric ...	10/26/1993
5225235	Semiconductor wafer and manufacturing method therefor A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a blocking film for preventing jumping out of impurities the...	07/06/1993
5047365	Method for manufacturing a heterostructure transistor having a germanium layer on gallium arsenide using molecular beam epitaxial growth A heterostructure bipolar transistor is formed by a process of steps of holding an N-type gallium arsenide body using as an emitter region in a high vacuum of 10-9 torr to 10-13 torr at a first temperature of 400° C. to 1,000° C. w...	09/10/1991
4925809	Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a blocking film for preventing jumping out of impurities the...	05/15/1990
4883769	Method of making a multidimensional quantum-well array Multidimensional quantum-well arrays are made by electron-beam lithographic atterning, followed by solid-state diffusion....	11/28/1989
4855250	Method of manufacturing a semiconductor laser with autodoping control A method of manufacturing a semiconductor light emitting device by forming a compound semiconductor structure with homo- or heterojunction therein having a first p-type compound semiconductor crystal layer at the top of the structure, growing a second p-t...	08/08/1989
4696701	Epitaxial front seal for a wafer A thin high resistivity epitaxial layer is provided over the entire surface of a semiconductor wafer in order to minimize autodoping while growing a desired epitaxial layer over the entire semiconductor wafer. The thin low resistivity epitaxial layer acts...	09/29/1987
4687682	Back sealing of silicon wafers Sealing the backside of a semiconductor wafer prevents evaporation of the dopant (typically boron) when an epitaxial layer is grown on the front (active) side, thereby preventing autodoping of the epitaxial layer with excess dopant. The present technique ...	08/18/1987
4662956	Method for prevention of autodoping of epitaxial layers A method for the prevention of dopant diffusion from the back side of a doped semiconductor substrate during epitaxial layer growth. The entire surface of the substrate is first covered with a cleanly etchable material. Around the entire first layer is fo...	05/05/1987
4571275	Method for minimizing autodoping during epitaxial deposition utilizing a graded pattern subcollector The method suggests the replacement of all or part of the solid or blanket buried region, typically a subcollector region of a bipolar transistor, by a mesh or stripe shaped subcollector. During subsequent thermal processing involving growth of the epitax...	02/18/1986
4504330	Optimum reduced pressure epitaxial growth process to prevent autodoping A reduced pressure epitaxial deposition method is disclosed to maximize performance and leakage limited yield of devices formed in the epitaxial layer. The method includes specified prebake and deposition conditions designed to minimize arsenic (buried su...	03/12/1985
4484332	Multiple double heterojunction buried laser device A multiple double heterojunction buried laser device is formed of a bulk structure, a plurality of double heterojunction buried lasers and electrical means. The bulk structure includes, in order, an InP:Sn substrate, an InP:Te first layer, an InP:Zn secon...	11/20/1984
4479222	Diffusion barrier for long wavelength laser diodes A diffusion barrier is created in a n-type heterojunction layer adjacent to the active region of a semiconductor laser by doping the n-type layer with a periodic table group VI element. The diffusion barrier in the n-type layer prevents the migration of a...	10/23/1984
4379005	Semiconductor device fabrication Semiconductor devices can be fabricated using as an intermediate manufacturing structure a substrate of one semiconductor with a thin epitaxial surface layer of a different semiconductor with properties such that the semiconductors each have different sol...	04/05/1983
4371967	Semiconductor laser In a semiconductor laser which has epitaxial layers including an active layer on a semiconductor substrate, a buffer layer is formed neighboring the active layer, in order to prevent undesirable diffusion of a highly diffusing dopant (Zn) into the active ...	02/01/1983
4236947	Fabrication of grown-in p-n junctions using liquid phase epitaxial growth of silicon High quality p-n junctions are formed in silicon grown epitaxially onto a silicon substrate of one conductivity type from a melt undersaturated with silicon and containing opposite conductivity type determining impurities. Lowering the substrate into the ...	12/02/1980
4170501	Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition A semiconductor integrated circuit device includes circuit elements having relatively different performance characteristics in which buried regions having different chemical elements are used to autodope an epitaxial layer to different degrees....	10/09/1979
4153486	Silicon tetrachloride epitaxial process for producing very sharp autodoping profiles and very low defect densities on substrates with high concentration buried impurity layers utilizing a preheating in hydrogen A method is described for depositing silicon epitaxy with very low defect levels and sharp dopant profiles which are suitable for fabricating high performance, shallow device structures. The epitaxial layer envisioned is less than about 2 microns in thick...	05/08/1979
3982974	Compensation of autodoping in the manufacture of integrated circuits A method of making an integrated circuit wherein a subcollector diffusion mask is formed on a semiconductor wafer. A principal impurity of a predetermined conductivity type is then diffused through windows in the mask and into the wafer to form subcollect...	09/28/1976
3956037	Method of forming semiconductor layers by vapor growth A method of forming a second semiconductor layer on a first semiconductor layer by vapor growth is disclosed. The two semiconductor layers are of the same conduction type but have different impurity concentrations. In the forming process, a doping gas is ...	05/11/1976

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Class 438/916 - Autodoping control or utilization