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Wearable Device For Feeding and Observing Birds and Other Flying Animals
A device for feeding and observing flying animals comprising a hat, a support mounted on the hat and extending outward from the hat, and a feeder mounted on the support.
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| Number | Title | Issue Date |
| 7431855 | Apparatus and method for removing photoresist from a substrate An apparatus and method for removing photoresist from a substrate, which includes treating the photoresist with a first reactant to cause swelling, cracking or delamination of the photoresist, treating the photoresist with a second reactant to chemically alter the p... | 10/07/2008 |
| 7432177 | Post-ion implant cleaning for silicon on insulator substrate preparation A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of th... | 10/07/2008 |
| 7432186 | Method of surface treating substrates and method of manufacturing III-V compound semiconductors Affords methods of surface treating a substrate and of manufacturing Group III-V compound semiconductors, in which a substrate made of a Group III-V semiconductor compound is rendered stoichiometric, and microscopic roughness on the surface following epitaxial growt... | 10/07/2008 |
| 7412982 | Cleaning probe and megasonic cleaning apparatus having the same A cleaning probe capable of providing uniform cleaning to an entire wafer while not damaging the edge portion of the wafer, and a megasonic cleaning apparatus having the cleaning probe are provided. The cleaning probe comprises a front portion located near the cente... | 08/19/2008 |
| 7402258 | Methods of removing metal contaminants from a component for a plasma processing apparatus Methods of removing metal contaminants from a component for a plasma processing apparatus are provided. The method includes cleaning a surface of the component with a cleaning liquid that includes at least one acid selected from oxalic acid, formic acid, acetic acid... | 07/22/2008 |
| 7368383 | Hillock reduction in copper films A method for treating a copper surface of a semiconductor device provides exposing the copper surface to a citric acid solution after the surface is formed using CMP (chemical mechanical polishing) or other methods. The citric acid treatment may take place during a ... | 05/06/2008 |
| 7361598 | Method for fabricating semiconductor device capable of preventing scratch Disclosed is a method for fabricating a semiconductor device capable of preventing scratches. The method includes the steps of: forming a substrate divided into a peripheral region and a cell region where a capacitor including a metal plate electrode on which partic... | 04/22/2008 |
| 7344975 | Method to reduce charge buildup during high aspect ratio contact etch A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopant... | 03/18/2008 |
| 7320942 | Method for removal of metallic residue after plasma etching of a metal layer A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution. ... | 01/22/2008 |
| 7306681 | Method of cleaning a semiconductor substrate A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cle... | 12/11/2007 |
| 7303637 | Method of cleaning semiconductor surfaces Devices and methods of cleaning are described. The methods, and devices formed by the methods have a number of advantages. Embodiments are shown that include cleaning using a supercritical fluid. Advantages include a combination of both chemical and mechanical remov... | 12/04/2007 |
| 7284558 | Enhanced megasonic based clean using an alternative cleaning chemistry The present invention relates to the use of a C1 to C5 alcohol during the cleaning step. With the use of said alcohol, the surface tension of the solution is reduced which allows the application of reduced megasonic power with increased cleanin... | 10/23/2007 |
| 7282099 | Dense phase processing fluids for microelectronic component manufacture Method for processing an article by contacting the article with a dense fluid. The article is introduced into a sealable processing chamber and the processing chamber is sealed. A dense fluid is prepared by introducing a subcritical fluid into a pressurization vesse... | 10/16/2007 |
| 7282098 | Processing-subject cleaning method and apparatus, and device manufacturing method and device A method for reducing energy consumption, and amounts of cleaning liquids and rinse liquids used. A cleaning head has a plurality of cleaning units and a drying unit. The organic, and inorganic, substance cleaning portions of each cleaning head, blows a first, and a... | 10/16/2007 |
| 7264680 | Process and apparatus for treating a workpiece using ozone A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the processing chamber. The ozone oxidi... | 09/04/2007 |
| 7262141 | Methods for cleaning a semiconductor substrate having a recess channel region A method for cleaning a semiconductor substrate forming device isolation layers in a predetermined region of a semiconductor substrate to define active regions; etching predetermined areas of the active regions to form a recess channel region and such that sidewalls... | 08/28/2007 |
| 7259024 | Method of treating a substrate in manufacturing a magnetoresistive memory cell A method of treating a substrate in manufacturing a magnetoresistive memory cell includes performing a cleaning operation on the substrate using a mask layer as a protection layer for etching of a peripheral via. Further, an etch stop layer can used as a protection ... | 08/21/2007 |
| 7255749 | Substrate cleaning method and substrate cleaning apparatus In a cleaning treatment of a substrate using an aqueous solution of ammonium fluoride or a mixture of an aqueous solution of ammonium fluoride and hydrofluoric acid as a cleaning liquid, the cleaning liquid is replenished by at least one liquid selected from the gro... | 08/14/2007 |
| 7235141 | Lift-off method and chemical liquid tank A lift-off procedure is provided which enables prevention of damage to a wiring pattern caused by contact of a metal being peeled off from a wafer with a wiring pattern at a time of lift-off procedure. A wafer having a surface on which a pattern is formed which cont... | 06/26/2007 |
| 7229863 | Method for fabricating thin film transistors A method for fabricating a thin film transistor is provided. First, a gate is formed on a substrate. A gate-insulating layer is formed to cover the gate. A patterned semiconductor layer is formed on the gate-insulating layer. A first and a second conductive layer ar... | 06/12/2007 |
| 7226513 | Silicon wafer cleaning method This invention provides a cleaning method of silicon wafer for obtaining a silicon wafer in which micro roughness thereof under spatial frequency of 20/μm is 0.3 to 1.5 nm3 in terms of power spectrum density, by passing a process of oxidizing the silicon... | 06/05/2007 |
| 7205231 | Method for in-situ uniformity optimization in a rapid thermal processing system The present invention is directed to a method for thermally processing a substrate in a thermal processing system. The method provides an amount of heat to the substrate and obtains information associated with the substrate when the amount of heat is provided. For e... | 04/17/2007 |
| 7192489 | Method for polymer residue removal following metal etching A method for removing polymer containing residues from a semiconductor wafer including metal containing features including providing a semiconductor wafer having a process surface including metal containing features said process surface at least partially covered wi... | 03/20/2007 |
| 7192878 | Method for removing post-etch residue from wafer surface A low-k dielectric film is deposited on the wafer. A metal layer is then deposited over the low-k dielectric film. A resist pattern is formed over the metal layer. The resist pattern is then transferred to the underlying metal layer to form a metal pattern. The resi... | 03/20/2007 |
| 7186657 | Method for patterning HfO2-containing dielectric A wafer has a trench, a STI layer formed in the trench, an HfO2-containing gate dielectric covering the wafer and the STI layer, a gate electrode formed on the HfO2-containing gate dielectric, and at least a spacer formed beside the gate electrode. The wafer is preh... | 03/06/2007 |
| 7182821 | Substrate processing method and substrate processing apparatus Disclosed is a substrate processing method including a substrate rotating step for rotating a substrate with the substrate held almost horizontally within a chamber; a peripheral edge processing step for discharging a processing liquid to a lower surface of the subs... | 02/27/2007 |
| 7169704 | Method of cleaning a surface of a water in connection with forming a barrier layer of a semiconductor device A method of cleaning a surface of a silicon wafer includes subjecting the surface of the silicon wafer to a hydrogen (H2) gas plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen (H2 | 01/30/2007 |
| 7166505 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method includes forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so that it will b... | 01/23/2007 |
| 7160396 | Washing method A washing method has a nonaqueous washing process of washing an object to be washed using a nonaqueous solution, an intermediate washing process of washing the object to be washed using a solution having solubility relative to both an aqueous solution and the nonaqu... | 01/09/2007 |
| 7156927 | Transition flow treatment process and apparatus A method is provided for treating an object. In this method, a treating chemical is introduced to a bath under conditions effective to at least partially envelop the object to be treated in eddy currents of the bath liquid, followed by introducing non-treating liqui... | 01/02/2007 |
| 7156111 | Megasonic cleaning using supersaturated cleaning solution A method and system for the megasonic cleaning of one or more substrates that reduces damage to the substrate(s) resulting from the megasonic energy. The substrates are supported in a process chamber and contacted with a cleaning solution comprising a cleaning liqui... | 01/02/2007 |
| 7151026 | Semiconductor processing methods Semiconductor processing methods are described which can be used to reduce the chances of an inadvertent contamination during processing. In one implementation, a semiconductor wafer backside is mechanically scrubbed to remove an undesired material prior to forming ... | 12/19/2006 |
| 7132372 | Method for preparing a semiconductor substrate surface for semiconductor device fabrication A method for preparing a semiconductor substrate surface (28) for semiconductor device fabrication, includes providing a semiconductor substrate (20) having a pure Ge surface layer (28) or a Ge-containing surface layer (12), such as SiGe.... | 11/07/2006 |
| 7129185 | Substrate processing method and a computer readable storage medium storing a program for controlling same A substrate processing method includes the steps of removing carbon from a surface of a silicon substrate by irradiating an ultraviolet light on the surface in an essentially ultraviolet nonreactive gas atmosphere and forming an oxide film or an oxynitride film on t... | 10/31/2006 |
| 7130038 | Method and apparatus for optical film measurements in a controlled environment An optical probe (and method) for measuring a surface in an environment containing a first substance, includes a light source for transmitting a light onto an area of the surface to obtain a measurement, a source of the first substance including one of a fluid and a... | 10/31/2006 |
| 7125783 | Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean A method for preventing the formation of watermark defects includes the steps of forming a pad oxide, a silicon nitride layer and a silicon oxynitride layer over a semiconductor substrate. A photoresist mask is formed over the resulting structure, with the silicon o... | 10/24/2006 |
| 7125784 | Method of forming isolation film in semiconductor device The present invention relates to a method for forming an isolation film in a semiconductor device. After a trench for isolation is formed, a polymer film is stripped by a post cleaning process using BFN. A pre-treatment cleaning process using only SC-1 is performed ... | 10/24/2006 |
| 7119052 | Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for c... | 10/10/2006 |
| 7111629 | Method for cleaning substrate surface There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. A mixture of H2 and N2 | 09/26/2006 |
| 7104268 | Megasonic cleaning system with buffered cavitation method A wafer cleaning method and system including a combined high frequency signal, a low frequency signal, and in one embodiment a biased voltage signal, allows cleaning particles and impurities off of fine-structured wafers, through application of an acoustic field to ... | 09/12/2006 |
