Bizarre Patents
Pet Toilet-Like Water Disk and Food Storage
One pet-friendly inventor patented "a device for watering pets, e.g., a dog or cat." The device, he helpfully noted, "has the general shape of a toilet."
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| Number | Title | Issue Date |
| 5914180 | Magnetic recording medium A magnetic recording medium having a thin magnetic metal film formed by vapor deposition under an atmosphere of an introduced oxygen gas. The thickness of the surface oxide film having the degree of oxidation of 50% or higher is maintained so as to be not... | 06/22/1999 |
| 5418181 | Method of fabricating diode using grid recess Method of fabricating semiconductor devices includes forming an operation layer for forming elements on a first principal plane of a semiconductor substrate; forming a grid recess for separating the elements on the operation layer; forming a support layer... | 05/23/1995 |
| 5374589 | Process of making a bistable photoconductive component Semi-insulating gallium arsenide wafers manufactured with varying silicon nsity shallow donors are copper compensated by heating to temperature of at least 550° C. to thermally diffuse the copper into the wafers and thereby provide deep copper acceptors ... | 12/20/1994 |
| 5360981 | Amorphous silicon memory An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact exerts a significant... | 11/01/1994 |
| 5151384 | Amorphous silicon switch with forming current controlled by contact region A method of making an electrical device comprising two electrodes and a body of a switching material formed by reacting amorphous silicon or silicon compound with a passivating agent to remove or reduce the number of unpaired electrons occuring therein. T... | 09/29/1992 |
| 5145809 | Fabrication of gunn diode semiconductor devices An improved method for manufacturing a semiconductor device is described. In the preferred embodiment, a Gunn diode is manufactured from InP active and buffer layers. The buffer layer is deposited on a GaAs substrate using an epitaxial deposition process ... | 09/08/1992 |
| 5057022 | Method of making a silicon integrated circuit waveguide A method for forming a semiconductor waveguide includes forming a layer of expitaxial silicon (12) over a substrate (10). The impurity concentration of the layer (12) is higher than that of the substrate (10). A second layer (14) of epitaxial silicon is d... | 10/15/1991 |
| 4818717 | Method for making electronic matrix arrays A method of making an electronic matrix array including the steps of: providing at least one layer of discrete portions of a phase changeable material having a substantially non-conductive state and a comparatively highly conductive state, said discrete p... | 04/04/1989 |
| 4677742 | Electronic matrix arrays and method for making the same A method of making an electronic matrix array atop a non-conductive surface is disclosed. The method includes forming a first set of address lines on the non-conductive surface, depositing continuous layers of semiconductor materials atop the non-conducti... | 07/07/1987 |
| 4371883 | Current controlled bistable electrical organic thin film switching device A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between metallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or ... | 02/01/1983 |
| 4366614 | Method for constructing devices with a storage action and having amorphous semiconductors Method for the production of devices having a memory action with amorphous semiconductors, comprising in sequence a substrate on which is deposited a lower electrode, an active area produced by means of an amorphous semiconductor compound and an upper ele... | 01/04/1983 |
| 4272562 | Method of fabricating amorphous memory devices of reduced first fire threshold voltage The first fire voltage of amorphous memory devices are reduced by forming the storage element of two layers, the first being in the crystalline state and the second being the amorphous state. The process deposits a first layer of switchable material and r... | 06/09/1981 |
| 4167806 | Method of fabrication of an amorphous semiconductor device on a substrate An active zone between a lower electrode deposited on a substrate and an upper electrode constitutes a portion of an amorphous semiconducting layer and is defined either by the dimensions of the upper electrode or by a window formed in an insulating layer... | 09/18/1979 |
| 3981073 | Lateral semiconductive device and method of making same A lateral semiconductive device, such as a Gunn device or Impatt diode, is fabricated by depositing a barrier layer of beryllia over an epitaxial grown layer of N- type semiconductive material on an N+ type semiconductive wafer. The wafer is then thinned ... | 09/21/1976 |
| 3980505 | Process of making a filament-type memory semiconductor device An improved memory device to be used in a D.C. circuit which device includes a pair of spaced electrodes between which extends a body of a generally amorphous high resistance memory semiconductor material made of a composition of at least two elements and... | 09/14/1976 |
| 3956042 | Selective etchants for thin film devices A method of making thin film devices with selective etchants. Specifically, a fabrication process in accordance with the invention provides for the manufacture of amorphous chalcogenide sandwich structures. Such structures consist of a glass substrate, a ... | 05/11/1976 |
