Class 438/90 - Including storage of electrical charge in substrate

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making a device responsive to electromagnetic
No. of patents: 27
Last issue date: 04/26/2011

Number	Title	Issue Date
7932125	Self-aligned charge storage region formation for semiconductor device Devices and methods for forming self-aligned charge storage regions are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a layer of a nitride film stacked between two oxide films on a semiconductor substrate, and form...	04/26/2011
7419883	Method for fabricating a semiconductor structure having selective dopant regions A method for fabricating a semiconductor structure having selective dopant regions in a semiconductor substrate having trenches formed therein I disclosed. In one embodiment, by a dopant source of an auxiliary structure, parts of the semiconductor structure which li...	09/02/2008
7276727	Electronic devices containing organic semiconductor materials An electronic device includes first and second electrical contacts electrically coupled to a semiconductor polymer film, which includes mono-substituted diphenylhydrazone. ...	10/02/2007
7268646	Temperature controlled MEMS resonator and method for controlling resonator frequency There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a temperature compensated microelectromechanical resonator as well as fabricating, manufacturing, providing and/or controlling microelectromechanical reso...	09/11/2007
7265410	Non-volatile memory cell having a silicon-oxide-nitride-oxide-silicon gate structure and fabrication method of such cell A non-volatile memory cell able to be written in a first direction and read in a second direction is described. The memory cell includes one or two charge trapping regions located near either the source or the drain, or both the source and the drain. During a progra...	09/04/2007
7221018	NROM flash memory with a high-permittivity gate dielectric A high permittivity gate dielectric is used in an NROM memory cell. The gate dielectric has a dielectric constant greater than silicon dioxide and is comprised of an atomic layer deposited and/or evaporated nanolaminate structure. The NROM memory cell has a substrat...	05/22/2007
7211873	Sensor device having thin membrane and method of manufacturing the same A sensor device for use in an automobile as an airflow sensor is composed of a silicon substrate in which a cavity is formed and a base plate bonded to the silicon substrate. An upper end of the cavity is closed with a thin membrane including a sensor element such a...	05/01/2007
7122396	Semiconductor acceleration sensor and process for manufacturing the same The present invention provides a semiconductor acceleration sensor wherein a semiconductor element is prevented from being damaged even when at least part of a weight is disposed in an internal space of a semiconductor sensor element and the mass of a weight is acco...	10/17/2006
7112461	Fabrication process for integrated circuit having photodiode device An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the junction. In a...	09/26/2006
7101739	Method for forming a schottky diode on a silicon carbide substrate A method for manufacturing a vertical Schottky diode with a guard ring on a lightly-doped N-type silicon carbide layer, including forming a P-type epitaxial layer on the N-type layer; implanting N-type dopants in areas of the P-type epitaxial layer to neutralize in ...	09/05/2006
7068125	Temperature controlled MEMS resonator and method for controlling resonator frequency There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a temperature compensated microelectromechanical resonator as well as fabricating, manufacturing, providing and/or controlling microelectromechanical reso...	06/27/2006
7042045	Non-volatile memory cell having a silicon-oxide nitride-oxide-silicon gate structure A non-volatile memory cell able to be written in a first direction and read in a second direction is described. The memory cell includes one or two charge trapping regions located near either the source or the drain, or both the source and the drain. During a progra...	05/09/2006
7029926	Double density MRAM with planar processing The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrate...	04/18/2006
6969883	Non-volatile memory having a reference transistor A non-volatile memory (30) comprises nanocrystal memory cells (50, 51, 53). The program and erase threshold voltage of the memory cell transistors (50, 51, 53) increase as a function of the number of program/erase operations. During a read opera...	11/29/2005
6955967	Non-volatile memory having a reference transistor and method for forming A non-volatile memory (30) comprises nanocrystal memory cells (50, 51, 53). The program and erase threshold voltage of the memory cell transistors (50, 51, 53) increase as a function of the number of program/erase operations. During a read opera...	10/18/2005
6939753	Liquid crystal display device and fabricating method thereof A liquid crystal display device includes an upper plate, a lower plate, and a liquid crystal. A sealant is formed along edges of the upper and lower plates to join the upper plate with the lower plate, and a protrusion separates the sealant from a picture displaying...	09/06/2005
6852583	Method for the production and configuration of organic field-effect transistors (OFET) The invention relates to an economical and precise method for the production and configuration of an organic field-effect transistor (OFET) whereby the solubility of at least one functional polymer of an OFET is utilized to such a degree, that the functional polymer...	02/08/2005
6696314	CMOS imager and method of formation A CMOS imager having an epitaxial layer formed below pixel sensor cells is disclosed. An epitaxial layer is formed between a semiconductor substrate and a photosensitive region to improve the cross-talk between pixel cells. The thickness of the epitaxial ...	02/24/2004
6689950	Paint solar cell and its fabrication A solar cell has an active structure including a paint voltage source having a first paint layer structure comprising p-type pigment particles dispersed in a first-layer binder, and a second paint layer structure comprising n-type pigment particles disper...	02/10/2004
6551853	Sensor having membrane structure and method for manufacturing the same In a sensor having a membrane structure, a sensor chip (silicon substrate) is provided with a through hole that is open on both upper and lower surfaces of the silicon substrate. A sensor element having a membrane structure is formed on the upper surface ...	04/22/2003
6506672	Re-metallized aluminum bond pad, and method for making the same A electroless plating method re-metallizes aluminum bond pads so that the re-metallized bond pads include layers of aluminum, zinc, nickel, and gold. The re-metallized bond pads are wire-bondable and solder wettable, and therefore can be flip-chip bonded....	01/14/2003
6232546	Microcavity apparatus and systems for maintaining a microcavity over a macroscale area A microcavity apparatus and systems for maintaining microcavity spacing over a macroscopic area. An application of this invention is a microscale generator. This microscale generator includes a first element for receiving energy; a second element, opposit...	05/15/2001
6180969	CMOS image sensor with equivalent potential diode A CMOS image sensor according to the present invention has a low-voltage photodiode which is fully depleted at a bias of 1.2-4.5V. The photodiode comprises: a P-epi layer; a field oxide layer dividing the P-epi layer into a field region and an active regi...	01/30/2001
5897331	High efficiency low cost thin film silicon solar cell design and method for making A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer d...	04/27/1999
5466613	Method of manufacturing a camera device A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device i...	11/14/1995
4960436	Radiation or light detecting semiconductor element containing heavily doped p-type stopper region A radiation or light detecting semiconductor element comprises a p-type monocrystalline silicon substrate having a high specific resistance of about 10,000 ohm-cm, a stopper layer formed in a part of a first principal surface of the substrate and diffused...	10/02/1990
4483063	Oxide charge induced high low junction emitter solar cell A method of forming a high-low junction emitter silicon solar cell including the producing of an electron accumulation layer by oxide-charge-induction....	11/20/1984

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Class 438/90 - Including storage of electrical charge in substrate