Class 438/9 - Plasma etching

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process wherein the chemical etching step utilizes an ionized
No. of patents: 360
Last issue date: 03/08/2011

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Number	Title	Issue Date
5348614	Process for dynamic control of the concentration of one or more reactants in a plasma-enhanced process for formation of integrated circuit structures A process for dynamically adjusting the concentration of one or more reactants in a plasma assisted process, such as a plasma etch process or a plasma deposition process, is described. The concentration of one or more reactants, as well as the concentrati...	09/20/1994
5346582	Dry etching apparatus Plasma light beams emitted from a plurality of monitoring areas on a wafer are introduced via windows and optical fibers, respectively, and detected by a detector. The detector determines etching end times of the respective monitoring areas. A calculating...	09/13/1994
5332464	Semiconductor device manfuacturing apparatus In a semiconductor device manufacturing apparatus for performing an etching operation with a reaction gas, in which three electrodes, namely, upper, intermediate and lower electrodes, are arranged parallel to one another, and the intermediate electrode is...	07/26/1994
5328556	Wafer fabrication Method and apparatus are set forth for providing a reactive radical species at a substrate surface. A wall structure defines an interior chamber. A substrate is mounted in the chamber at a target position therein with a surface region of the substrate ori...	07/12/1994
5322590	Plasma-process system with improved end-point detecting scheme In one aspect of the invention, CHF3 gas and CF4 gas (i.e., reactant gases), and argon gas (i.e., plasma-stabilizing gas) are introduced into a vacuum chamber. RF power is then applied between the electrodes within the chamber, there...	06/21/1994
5320704	Plasma etching apparatus A magnetron plasma etching apparatus comprises a chamber and a mount for supporting a substrate. A high-potential electrode connected to an RF power source is connected to the mount, and a low-potential electrode which is grounded is connected to the cham...	06/14/1994
5282921	Apparatus and method for optimally scanning a two-dimensional surface of one or more objects A method for optimally scanning, for example, a surface of one or more silicon-on-insulator (SOI) semiconductor wafers 10 consists of a spiral type scan technique. The spiral type scan can maintain a path pattern 30 that encompasses the surface diameter o...	02/01/1994
5271800	Method for anisotropic etching in the manufacture of semiconductor devices Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species o...	12/21/1993
5261998	Method for detecting an end point of etching in semiconductor manufacture using the emission spectrum of helium For dry-etching a material such as an aluminum alloy layer, a helium gas is added to an etching gas to detect an end point of etching in the material. When the dry-etching of the material has been completed, an emission spectrum intensity of helium having...	11/16/1993
5242532	Dual mode plasma etching system and method of plasma endpoint detection A dual mode plasma etching system and method for plasma etching endpoint detection etches a designated layer of a specified material on a substrate without exposing the substrate surface to a high-energy etching plasma. The substrate is prepared for etchi...	09/07/1993
5232537	Dry etching apparatus Plasma light beams emitted from a plurality of monitoring areas on a wafer are introduced via windows and optical fibers, respectively, and detected by a detector. The detector determines etching end times of the respective monitoring areas. A calculating...	08/03/1993
5188980	Inert gas purge for the multilayer poly gate etching improvement A process for dry etching a multilayer tungsten silicide or other metal silicide polysilicon gate structure of an integrated circuit is achieved. A mixture of chlorine and helium gases is flowed into a vacuum chamber and a radio frequency is applied for e...	02/23/1993
5145554	Method of anisotropic dry etching of thin film semiconductors A microwave ECR plasma etching method and apparatus, including a plasma generating chamber coupled to a separate treatment chamber for supporting a Group II-VI sample to be dry etched, are tailored for the dry etching of Group II-VI compound semiconductor...	09/08/1992
5082517	Plasma density controller for semiconductor device processing equipment A semiconductor fabrication plasma property controller (100) for controlling physical properties of a fabrication process plasma medium (144) under the influence of electromagnetic gas discharge energy from a power source (38) comprises a control volume (...	01/21/1992
5045149	Method and apparatus for end point detection A method and an apparatus for detecting the endpoint in a plasma etching process is disclosed. The invention uses a positive filter and a negative filter simultaneously to generate a first and a second signal respectively. The first and second signals are...	09/03/1991
5035768	Novel etch back process for tungsten contact/via filling An etchback process for etching a refractory metal layer formed on a semiconductor substrate with a greatly reduced micro-loading effect. The etch proceeds in three steps. The first step is a uniform etch which utilizes a gas chemistry of SF6, ...	07/30/1991
5030316	Trench etching process A trench etching process comprises the steps of: preparing a substrate, forming a mask pattern for the trench etching having a material different from that of the substrate, on the substrate, and detecting changes in results of emission spectroanalyses ge...	07/09/1991
4994410	Method for device metallization by forming a contact plug and interconnect using a silicide/nitride process A semiconductor device, device metallization, and method are described. The device metallization, which is especially designed for submicron contact openings, includes titanium silicide to provide a low resistance contact to a device region, titanium nitr...	02/19/1991
4994409	Method for manufacturing a trench capacitor using a photoresist etch back process A method for manufacturing a trench capacitor in a silicon wafer using a photoresist etch back process comprising sequentially depositing an oxide layer, a nitride layer and an oxide layer as a mask layer on the Si wafer and coating the mask layer with a ...	02/19/1991
4980018	Plasma etching process for refractory metal vias An etchback process for etching a refractory metal layer formed on a semiconductor substrate with a greatly reduced micro-loading effect. The etch proceeds in three steps. The first step is a uniform etch which utilizes a gas chemistry of SF6, ...	12/25/1990
4948462	Tungsten etch process with high selectivity to photoresist A process is disclosed for the etching of a tungsten layer on a semiconductor wafer through a photoresist mask to form a pattern of tungsten lines on the wafer. The process is characterized by a high selectivity to photoresist material and resistance to l...	08/14/1990
4927785	Method of manufacturing semiconductor devices A method of manufacturing semiconductor devices is set forth using reactive ion plasma etching in which an optical grating is formed to etch underlying regions, such as dielectric material, semiconductor material, or alternate layers of different semicond...	05/22/1990
4874459	Low damage-producing, anisotropic, chemically enhanced etching method and apparatus Anisotropic chemically enhanced etching apparatus producing extremely low surface damage during the etching process. There is an evacuated main chamber in which an etching process takes place. A temperature-controlled, tiltable stage receives and holds th...	10/17/1989
4859277	Method for measuring plasma properties in semiconductor processing An apparatus and method for measuring the concentration profile of an active species across the surface of a semiconductor slice in a plasma reactor is disclosed that permits uniformity of etch and deposition across the surface of the semiconductor slice....	08/22/1989
4855015	Dry etch process for selectively etching non-homogeneous material bilayers A plasma etching process employs a halogen liberating gas to selectively etch a top semiconductor layer of a bilayer with respect to a bottom semiconductor layer. A fluorine rich gas reacts with a top germanium layer for removal thereof, while forming a p...	08/08/1989
4713141	Anisotropic plasma etching of tungsten An anisotropic plasma etching of a tungsten metal film of a semiconductor device is disclosed. The device is placed in a plasma etcher using SF6 and Cl2 gas mixture to anisotropically etch the tungsten metal film layer....	12/15/1987
4705595	Method for microwave plasma processing Disclosed is a method for microwave plasma processing characterized by providing a plasma processing period of time having no radio-frequency voltage applied to the sample stage. Particularly, if the present invention is used for the shaping by etching of...	11/10/1987
4657620	Automated single slice powered load lock plasma reactor A plasma reactor for the manufacturing of semiconductor devices has powered loadlocks and a main process chamber where slices can be processed one slice at a time with pre-etch plasma treatments before the main etching processing and afterwards receive a ...	04/14/1987
4615761	Method of and apparatus for detecting an end point of plasma treatment The present invention relates to a method of and apparatus for detecting the end point of plasma treatment. The method includes steps: selecting a plasma spectrum having a characteristic wavelength from the plasma spectrum occurring at the time of the pla...	10/07/1986
4579623	Method and apparatus for surface treatment by plasma A gas is introduced into a vacuum chamber after the vacuum chamber is evacuated, and a plasma is generated within at least part of the vacuum chamber. The specimen surface is exposed to the plasma so that the surface is treated. A plurality of different g...	04/01/1986
4496425	Technique for determining the end point of an etching process A method for detecting the end point of the plasma etching of a pattern (36) in an aluminum layer (33) on a silicon wafer (16). The pattern (36) and portions of a Fresnel zone plate (30) are simultaneously etched in the aluminum layer (33). The intensity ...	01/29/1985
4493745	Optical emission spectroscopy end point detection in plasma etching A method for etching a batch of semiconductor wafers to end point using optical emission spectroscopy is described. The method is applicable to any form of dry plasma etching which produces an emission species capable of being monitored. In a preferred em...	01/15/1985
4457820	Two step plasma etching A method of etching a variable thickness material on a substrate through an opening or openings is disclosed. The method includes a first etch step in which the material is isotropically etched until the substrate material is first exposed defining a firs...	07/03/1984
4447290	CMOS Process with unique plasma etching step A CMOS process which provides a self-aligned guardband in a high density circuit is disclosed. A polysilicon masking member is used to define a well and also to provide alignment for the guardband. A single plasma etching step etches silicon nitride in on...	05/08/1984
4435898	Method for making a base etched transistor integrated circuit A process is described which permits the fabrication of very narrow base width bipolar transistors. The ability to selectively vary the transistor characteristics provides a degree of freedom for design of integrated circuits. The bipolar transistor is pr...	03/13/1984
4430151	Method of monitoring status of a silicon layer by detecting, emission spectra variable during etching In a monitoring method of monitoring status of a silicon layer etched in a hollow space by plasma, a chlorine including gas is introduced into a hollow space to cause CCl-radical to occur in the hollow space. A first spectrum region is selected to detect ...	02/07/1984
4415402	End-point detection in plasma etching or phosphosilicate glass A method for determining the completion of removal by plasma etching of phosphorus doped silicon dioxide from an underlying substrate....	11/15/1983
4377436	Plasma-assisted etch process with endpoint detection Endpoint detection during plasma-assisted etching is signalled by cessation or onset of spatially confined luminescence resulting from an etch reaction product. Sensitivity of the system is aided by an optically focused detector which selectively detects ...	03/22/1983
4263088	Method for process control of a plasma reaction An apparatus and method for controlling a plasma etching reaction. The plasma reaction is controlled by monitoring the output voltage of an optical detector which is responsive to emissions emanating from the reaction. As the output of the detector change...	04/21/1981
4263089	Plasma development process controller End point detection in developing photoresist is accomplished by monitoring the output of a photodetector and sensing a plateau in the output....	04/21/1981

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Class 438/9 - Plasma etching