Class 438/9 - Plasma etching

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process wherein the chemical etching step utilizes an ionized
No. of patents: 360
Last issue date: 03/08/2011

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Number	Title	Issue Date
6200822	Method for detecting the transition between different materials in semiconductor structures A method for detecting the transition between different materials in semiconductor structures during alternating etching and covering steps for anisotropic depthwise etching of defined patterns performed using a plasma. Provision is made for ascertaining,...	03/13/2001
6200908	Process for reducing waviness in semiconductor wafers A process for reducing the waviness of a semiconductor wafer utilizing plasma assisted chemical etching is disclosed. The process includes measuring the surface profile at discrete points on one surface of the wafer independent from the apposing surface, ...	03/13/2001
6192826	Method and apparatus for monitoring plasma processing operations The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of cal...	02/27/2001
6187685	Method and apparatus for etching a substrate There is disclosed a method and apparatus for etching a substrate. The method comprises the steps of etching a substrate or alternately etching and depositing a passivation layer. A bias frequency, which may be pulsed, may be applied to the substrate and ...	02/13/2001
6171973	Process for etching the gate in MOS technology using a SiON-based hard mask A process for etching a gate conductor material in the fabrication of MOS transistors is presented. A hard mask layer composed of silicon oxynitride is formed upon a gate conductor layer. The hard mask layer is preferably patterned using a resin layer. Th...	01/09/2001
6165312	Method and apparatus for monitoring plasma processing operations The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of cal...	12/26/2000
6159864	Method of preventing damages of gate oxides of a semiconductor wafer in a plasma-related process The present invention provides a method for preventing gate oxides on a semiconductor wafer from being damaged by electromagnetic waves or particles generated in a plasma-related process. The semiconductor wafer comprises a substrate, a plurality of gate ...	12/12/2000
6157447	Method and apparatus for monitoring plasma processing operations The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of cal...	12/05/2000
6153115	Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra Plasma process analysis techniques are provided. The intensity of each of a number, P, of a plurality of radiation wavelengths that are emitted from a plasma process are monitored as the process proceeds. Indications of P-dimensional correlations between ...	11/28/2000
6127271	Process for dry etching and vacuum treatment reactor A process for dry etching a surface within a vacuum treatment reactor includes evacuating the reactor, generating a glow discharge within said reactor, feeding a reactive etching gas into said reactor and reacting said etching gas within said reactor, rem...	10/03/2000
6112595	Apparatus and method for characterizing semiconductor wafers during processing An apparatus and method are disclosed for characterizing semiconductor wafers or other test objects that can support acoustic waves. Source and receiving transducers are configured in various arrangements to respectively excite and detect acoustic waves (...	09/05/2000
6096232	Dry etching system and dry etching method using plasma A dry etching system capable of suppressing the effect of reaction products generated in a reaction chamber during an etching process to the edge profile of an etch object such as a semiconductor wafer. This system includes a reaction chamber in which an ...	08/01/2000
6077387	Plasma emission detection for process control via fluorescent relay Method and system for monitoring a plasma etch process performed in a plasma processing chamber, the method and system being capable of accurately monitoring and controlling the plasma etch process without being affected by the change in a plasma light em...	06/20/2000
6068783	In-situ and non-intrusive method for monitoring plasma etch chamber condition utilizing spectroscopic technique A spectroscopic method is disclosed to provide a non-intrusive and in-situ monitoring of plasma etching conditions during the fabrication of semiconductor devices using RF power. It includes the steps of: (a) selecting a single plasma gas as a probe, in a...	05/30/2000
6060329	Method for plasma treatment and apparatus for plasma treatment A method for plasma treatment is disclosed which effects detection of the amount of particles in an plasma generation area measuring the electron density in the particles based on the numerical value of the electric density in the plasma generation area....	05/09/2000
6060328	Methods and arrangements for determining an endpoint for an in-situ local interconnect etching process An arrangement is provided for collecting, measuring and analyzing at least two specific wavelengths of optical emissions produced while etching a semiconductor wafer in a plasma chamber to determine an optimal endpoint for the etching process. The arrang...	05/09/2000
6057247	Method for fabricating semiconductor device and method for controlling environment inside reaction chamber of dry etching apparatus A method for fabricating a semiconductor device according to the present invention includes the steps of: forming an oxide film on a substrate having a silicon region at least on the surface thereof; defining a resist pattern on the oxide film; placing th...	05/02/2000
6054333	Real time etch measurements and control using isotopes A method is provided for determining etching characteristics during gas phase etching of thin film materials such as semiconductors during manufacture of devices. Etch end point, rate of etching, uniformity of etching and uniformity of growth of thin film...	04/25/2000
6028008	Calibration standard for profilometers and manufacturing procedure The invention relates to calibration standards which are used chiefly for the calibration of profilometers and in atomic force- and scanning probe microscopes. The calibration standard has one step of defined height H or a multi-step system formed of seve...	02/22/2000
6024831	Method and apparatus for monitoring plasma chamber condition by observing plasma stability A method and apparatus for monitoring condition of the plasma of a plasma process during processing is disclosed. A spectrum detector (12) detects the intensity of a predetermined wavelength of radiation produced by the plasma process. The output of the s...	02/15/2000
5989928	Method and device for detecting end point of plasma treatment, method and device for manufacturing semiconductor device, and semiconductor device In order to detect the end point of a plasma process stably and at a high precision always without being affected by the fine delineation of a pattern to be processed and an external disturbance, it is constructed such that emission wavelength components ...	11/23/1999
5989929	Apparatus and method for manufacturing semiconductor device A reactor is composed of a lower frame of a chamber, a quartz dome, an upper electrode, an 0 ring, and the like. A lower electrode and a substrate as a workpiece to be processed thereon are disposed in the reactor. The temperature of the quartz dome is ma...	11/23/1999
5980766	Process optimization in gas phase dry etching A method of designing a reactor 10. The present reactor design method includes steps of providing a first plasma etching apparatus 10 having a substrate 21 therein. The substrate includes a top surface and a film overlying the top surface, and the film ha...	11/09/1999
5980767	Method and devices for detecting the end point of plasma process Disclosed herein is a method of detecting an end point of plasma process performed on an object, and a plasma process apparatus. The method includes the steps of detecting an emission spectrum over a wavelength region specific to C2 in the plas...	11/09/1999
5966586	Endpoint detection methods in plasma etch processes and apparatus therefor Methods for determining an endpoint for a plasma etching process. The plasma etching process is employed to etch a substrate in a plasma processing chamber. The method includes detecting, using a mass analyzer, a density of a predefined compound in the pl...	10/12/1999
5960254	Methods for the preparation of a semiconductor structure having multiple levels of self-aligned interconnection metallization An improved semiconductor structure is disclosed, including at least one stud-up and an interconnection line connected thereto, wherein the stud-up and interconnection line are formed from a single layer of metal. The structure is prepared by a method in ...	09/28/1999
5956564	Method of making a side alignment mark An apparatus in accordance with this invention includes an alignment mark that is formed in a substrate. The alignment mark extends across a dice line so that, upon dicing the substrate, the mark is exposed in the substrate's side edge. The mark is formed...	09/21/1999
5953578	Global planarization method using plasma etching A semiconductor wafer is planarized by first mapping the flatness profile and then etching the wafer according to the flatness profile. Mapping is accomplished by scanning the wafer with a light beam. The flatness information is obtained by a phase detect...	09/14/1999
5930585	Collar etch method to improve polysilicon strap integrity in DRAM chips In the manufacture of 16 Mbits DRAM chips, a polysilicon strap is used to provide an electrical contact between the drain region of the active NFET device and one electrode of the storage capacitor for each memory cell. The storage capacitor is formed in ...	07/27/1999
5925575	Dry etching endpoint procedure to protect against photolithographic misalignments A process for forming a planarized, insulator, or silicon oxide filled shallow trench has been developed. The process features a hybrid planarization procedure, comprised of an initial dry etching cycle, used to remove all but about 100 to 500 Angstroms o...	07/20/1999
5897378	Method of monitoring deposit in chamber, method of plasma processing, method of dry-cleaning chamber, and semiconductor manufacturing apparatus In the process of dry etching or the like, the bond between specific atoms contained in a deposit attached on the interior wall of a chamber and composed of an etching by-product is monitored by using an infrared ray. An incoming infrared ray generated fr...	04/27/1999
5885472	Method for detecting etching endpoint, and etching apparatus and etching system using the method thereof A method for detecting an etching endpoint and a plasma etching apparatus and a plasma etching system using such a device are disclosed, in which time series data of a signal corresponding to the amount of light of the plasma light generated during the pl...	03/23/1999
5877032	Process for device fabrication in which the plasma etch is controlled by monitoring optical emission The present invention is directed to a process for device fabrication in which a pattern is transferred from a photoresist mask into an underlying layer of silicon dioxide. A plasma containing a fluorocarbon gas is used to etch the pattern into the underl...	03/02/1999
5874318	Dishing and erosion monitor structure for damascene metal processing According to the preferred embodiment, an erosion and dishing monitor and monitor method are provided that facilitates the accurate optimization of a planarization process as in semiconductor process. The dishing monitor comprises at least two monitor str...	02/23/1999
5871658	Optical emisson spectroscopy (OES) method for monitoring and controlling plasma etch process when forming patterned layers A method for monitoring and controlling a plasma etch method for forming a patterned layer. There is first provided a substrate having a blanket layer formed thereover, the blanket layer having a patterned photoresist layer formed thereupon. There is then...	02/16/1999
5858878	Semiconductor wafer etching method and post-etching process The present invention discloses a method including the main etching step for etching a semiconductor wafer having a resist film serving as an etching mask by plasma of an etching gas, and an post-processing step for processing the object after the main et...	01/12/1999
5851925	Staining technique for semiconductor device for sem exposure A method for staining a wafer containing a semiconductor device is disclosed which properly delineates the various layers of the semiconductor device and provides good contrast for proper testing and diagnosis of problems using a scanning electron microsc...	12/22/1998
5851842	Measurement system and measurement method The measurement system comprises a holder for holding a dielectric film formed on at least a semiconductive substrate and sandwiched between the substrate and a conductive film, voltage application terminals for applying voltage between the substrate and ...	12/22/1998
5841651	Closed loop adaptive control of spectrum-producing step using neural networks Characteristics of the plasma in a plasma-based manufacturing process step are monitored directly and in real time by observing the spectrum which it produces. An artificial neural network analyzes the plasma spectrum and generates control signals to cont...	11/24/1998
5824606	Methods and apparatuses for controlling phase difference in plasma processing systems A method in a plasma processing system for modifying a phase difference between a first radio frequency (RF) signal and a second RF signal. The first RF signal is supplied by a first RF power source to a first electrode and the second RF signal is supplie...	10/20/1998

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Class 438/9 - Plasma etching