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| Number | Title | Issue Date |
| 6451620 | Method for etching organic film, method for fabricating semiconductor device and pattern formation method An organic film is etched by using plasma generated from an etching gas including a first gas containing, as a principal constituent, a compound including carbon, hydrogen and nitrogen and a second gas including a nitrogen component.... | 09/17/2002 |
| 6449522 | Managing a semiconductor fabrication facility using wafer lot and cassette attributes Systems and methods for managing automated material handling systems, such as semiconductor fabrication facilities, using material item (e.g., wafer lot) attributes and cassette attributes are provided. A semiconductor fabrication facility typically inclu... | 09/10/2002 |
| 6448094 | Method of detecting etching depth A method of detecting an etching depth of a target object includes the steps of irradiating an etching layer of the target object that is being etched in an etching section with light having a plurality of components differing from each other in a wavelen... | 09/10/2002 |
| 6432730 | Plasma processing method and apparatus A plasma processing method includes evacuating a vacuum chamber while supplying a gas into the vacuum chamber, thereby controlling an interior of the vacuum chamber to a pressure, and supplying a high frequency power of a frequency of 50 MHz-3 GHz to an a... | 08/13/2002 |
| 6420194 | Method for extracting process determinant conditions from a plurality of process signals A system and method for identifying events in a manufacturing process from a sequence of m-dimensional input data signals, mࣙ2 obtained from monitoring of the manufacturing process utilizing a data processor for transforming each m-dimensional input dat... | 07/16/2002 |
| 6419846 | Determining endpoint in etching processes using principal components analysis of optical emission spectra A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes analyzing at least a portion of the coll... | 07/16/2002 |
| 6417013 | Morphed processing of semiconductor devices A method for controlling a variable parameter during a processing of a semiconductor device includes selecting a beginning and an ending value; selecting a function governing how the parameter is to be transitioned; initializing the parameter to the begin... | 07/09/2002 |
| 6414499 | Method for monitoring the shape of the processed surfaces of semiconductor devices and equipment for manufacturing the semiconductor devices An equipment for manufacturing semiconductor devices, comprises a processing tool which processes a to-be-processed surface of a semiconductor workpiece to a target shape, a monitor which three-dimensionally monitors a shape of a processed surface of the ... | 07/02/2002 |
| 6410348 | Interface texturing for light-emitting device An interface texturing for light-emitting device is formed by utilizing holographic lithography. Two coherent light beams are overlaid to cause constructive and destructive interference and thereby periodical alternative bright and dark lines are formed. ... | 06/25/2002 |
| 6406924 | Endpoint detection in the fabrication of electronic devices A chamber 28 comprises a radiation source 58 capable of emitting radiation having a wavelength that is substantially absorbed in a predetermined pathlength in a thickness of a layer 22 on a substrate, and a radiation detector 62 adapted to detect the radi... | 06/18/2002 |
| 6379981 | Methods incorporating detectable atoms into etching processes In one aspect, the invention includes a method of etching, comprising: a) forming a material over a substrate, the material comprising a lower portion near the substrate and an upper portion above the lower portion; b) providing a quantity of detectable a... | 04/30/2002 |
| 6379980 | Method and apparatus for monitoring material removal tool performance using endpoint time removal rate determination A method for monitoring the performance of a material removal tool includes providing a wafer having at least one process layer formed thereon; measuring the thickness of the process layer; removing at least a portion of the process layer in the material ... | 04/30/2002 |
| 6372523 | Etching method and etching device An etching method and a device therefor are provided to detect the etching end point with high accuracy and reproducibility. In an etching method and device, in dry etching, a variation of a self-bias voltage as a time elapses is measured, and a time wher... | 04/16/2002 |
| 6372655 | Two etchant etch method A two etchant etch method for etching a layer that is part of a masked structure is described. The method is useful, for example, in microelectrical mechanical system (MEMS) applications, and in the fabrication of integrated circuits and other electronic ... | 04/16/2002 |
| 6365423 | Method of inspecting a depth of an opening of a dielectric material layer For determining the quality of an opening formed in a dielectric material layer, a voltage contrast inspection tool is used to produce a voltage contrast image of a test pattern formed in the dielectric material layer. The voltage contrast values of openi... | 04/02/2002 |
| 6358760 | Method for amorphous silicon local interconnect etch A silicon layer is etched using a plasma etcher equipped with an endpoint control device. CF4 and N2 are provided to the plasma etcher at lower flow rates than those typically used during fixed time etching processes. The endpoint co... | 03/19/2002 |
| 6352870 | Method of endpointing plasma strip process by measuring wafer temperature In one illustrative embodiment, the method disclosed herein comprises forming a process layer above a semiconducting substrate, forming a layer of photoresist above the process layer, removing the layer of photoresist by performing an etching process, and... | 03/05/2002 |
| 6351683 | System and method for monitoring and controlling gas plasma processes A system and method for monitoring the conditions in a gas plasma processing system while varying or modulating the RF power supplied to the system, so that resulting signals of the electrical circuits of the system provide information regarding operation... | 02/26/2002 |
| 6350390 | Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control A feed forward method for forming within a microelectronic fabrication a patterned target layer with controlled critical dimension (CD) first provides a substrate having formed thereover a blanket target layer, in turn having formed thereover a blanket an... | 02/26/2002 |
| 6348389 | Method of forming and etching a resist protect oxide layer including end-point etch The present invention provides a method for forming and etching a resist protect oxide layer, of which provides improved etch selectivity to a shallow trench isolation and an increased pre-metal dip processing window. The process begins by forming a shall... | 02/19/2002 |
| 6344364 | Etching methods In one aspect, the invention includes a method of etching, comprising: a) forming a material over a substrate, the material comprising a lower portion near the substrate and an upper portion above the lower portion; b) providing a quantity of detectable a... | 02/05/2002 |
| 6344151 | Gas purge protection of sensors and windows in a gas phase processing reactor A gas purged viewport for endpoint detection in a gas phase processing chamber is provided which prevents contamination of an optical monitoring window by use of a purge gas flow. The purge gas purges the viewport and prevents deposition of byproducts and... | 02/05/2002 |
| 6340603 | Plasma emission detection during lateral processing of photoresist mask Photoresist mask width dimensions are determined by emission spectroscopy while simultaneously etching or depositing material on the sidewalls of the photoresist mask in a plasma environment. Embodiments include stopping the etching or deposition process ... | 01/22/2002 |
| 6339018 | Silicide block bounded device A method and structure for preventing device leakage. The method and structure includes forming a blocking layer of preferably nitride over a junction between a source/drain region and a shallow trench isolation. A silicide is then formed over a landed ar... | 01/15/2002 |
| 6323046 | Method and apparatus for endpointing a chemical-mechanical planarization process A method and apparatus for endpointing a planarization process of a microelectronic substrate. In one embodiment, the apparatus may include a species analyzer that receives a slurry resulting from the planarization process and analyzes the slurry to deter... | 11/27/2001 |
| 6297064 | End point detecting method for semiconductor plasma processing When plasma-etching a silicon dioxide film with a CF-based gas, the emission intensities (Ia, Ib) of CF-based radicals and carbon monoxide are observed through spectroscopes (61, 62). First, first and second approximate expressions (Fa(x), Fb(x)) which ap... | 10/02/2001 |
| 6277763 | Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen A method and apparatus for etching of a substrate comprising both a polysilicon layer and an overlying tungsten layer. The method comprises etching the tungsten layer in a chamber using a plasma formed from a gas mixture comprising a fluorinated gas (such... | 08/21/2001 |
| 6267121 | Process to season and determine condition of a high density plasma etcher An improved seasoning process for a plasma etching chamber is described. This has been achieved by increasing the RF power to both the wafer and the walls of the chamber during seasoning. Additionally, the gas that is used is at a pressure of about 10 mTo... | 07/31/2001 |
| 6265231 | Process control via valve position and rate of position change monitoring A computer implemented method for endpointing an etch process comprising the acts of monitoring an attribute of a pressure control valve and determining an endpoint of the process based upon the monitored attribute. The monitored attribute includes the po... | 07/24/2001 |
| 6265316 | Etching method A method of forming a trench in a semiconductor substrate by gas plasma etching having the steps of detecting and analyzing emission spectrums of gas plasma etching products and controlling the gas plasma etching based on the ratio of the emission spectru... | 07/24/2001 |
| 6261470 | Method and apparatus for monitoring plasma processing operations The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of cal... | 07/17/2001 |
| 6258497 | Precise endpoint detection for etching processes A homogeneous marker is formed, possibly by the adsorption of trace amounts of an ambient material such as carbon monoxide gas, at a surface of a deposited material when the plasma in momentarily interrupted during plasma enhanced chemical vapor depositio... | 07/10/2001 |
| 6254717 | Method and apparatus for monitoring plasma processing operations The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of cal... | 07/03/2001 |
| 6238937 | Determining endpoint in etching processes using principal components analysis of optical emission spectra with thresholding A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes analyzing at least a portion of the coll... | 05/29/2001 |
| 6231774 | Plasma processing method Plasma P that is caused to fluctuate by a magnet 128 is generated inside a reaction chamber 102 of an etching apparatus 100. The signal of the fluctuating plasma light detected at a photosensor unit 136 via a detection window 134 is sampled over a constan... | 05/15/2001 |
| 6232134 | Method and apparatus for monitoring wafer characteristics and/or semiconductor processing consistency using wafer charge distribution measurements A method and apparatus for characterizing processing operations is presented. Following exposure of a wafer to plasma, the surface charge distribution pattern on the wafer is measured. The surface charge distribution pattern on the wafer is then compared ... | 05/15/2001 |
| 6221679 | Method and apparatus for monitoring plasma processing operations The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of cal... | 04/24/2001 |
| 6210981 | Method for etching a flip chip using secondary particle emissions to detect the etch end-point A method for etching a flip chip using secondary particle emissions to detect the etch end-point. The method comprises supplying a voltage level to the device and directing an ion beam at a selected area of the back side of the device in the presence of a... | 04/03/2001 |
| 6210593 | Etching method and etching apparatus In etching a target film to be etched antecedently, an etching rate is measured at each of the peripheral and central portions of the target film. If the etching rate is higher at the peripheral portion of the target film to be etched antecedently than at... | 04/03/2001 |
| 6211009 | Manufacturing a capacitor electrode in a semiconductor device A method for use in forming a capacitor having a hollow-cylinder electrode structure in a semiconductor device via controlled reactive etching of substantially only one semiconducting layer of a semiconductor device. In one embodiment, the device is a dyn... | 04/03/2001 |
