Did You Know...
...that two musicians were responsible for the invention of color print film? Fascinated by photography, Leopold Godowsky and Leopold Mannes worked together to produce an easy-to-use, practical color film. They worked full time as music teachers and gave concerts while experimenting during their off hours in Mannes' kitchen. Their success earned them full-time, well-paying jobs at Kodak and their efforts resulted in Kodachrome film, which was introduced in 1935.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 6916746 | Method for plasma etching using periodic modulation of gas chemistry A method for etching a layer over a substrate is provided. A gas-modulated cyclic process is performed for more than three cycles. Each cycle comprises performing a protective layer forming phase using first gas chemistry with a deposition gas chemistry, which is pe... | 07/12/2005 |
| 6916396 | Etching system and etching method An etching system for subjecting a single film to be etched to etching involves a plurality of etching steps in which respective different recipes are applied. The etching system employs recipe generating means which fixes the recipe to be applied to the final etchi... | 07/12/2005 |
| 6917204 | Addition of power at selected harmonics of plasma processor drive frequency A method for controlling the non-uniformities of plasma-processed semiconductor wafers by supplying the plasma with two electrical signals: a primary electrical signal that is used to excite the plasma, and a supplemental electrical signal. The supplemental signal m... | 07/12/2005 |
| 6908774 | Method and apparatus for adjusting the thickness of a thin layer of semiconductor material A method for adjusting the thickness of a thin semiconductor material layer. The method includes measuring the layer to establish a thickness profile, determining thickness adjustment specifications from the measured thickness profile, and adjusting the thickness of... | 06/21/2005 |
| 6908846 | Method and apparatus for detecting endpoint during plasma etching of thin films A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the first layer and at least partially through the end-point generating lay... | 06/21/2005 |
| 6905624 | Interferometric endpoint detection in a substrate etching process A method of etching a substrate includes placing a substrate in a process zone. The substrate has a material with a thickness, and the material has exposed regions between features of a patterned mask. An etchant gas is introduced into the process zone. The etchant ... | 06/14/2005 |
| 6903826 | Method and apparatus for determining endpoint of semiconductor element fabricating process Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask l... | 06/07/2005 |
| 6903800 | Film-processing method and film-processing apparatus A film-processing method according to the present invention includes: a processing step of irradiating electron beams onto a film on a surface of an object to be processed to conduct a process to the film; an electric-current measuring step of capturing the electron... | 06/07/2005 |
| 6894786 | Process monitor A substrate is etched in a vacuum enclosure in a process which generates plasma light emission. The process is monitored by passing emitted light via a window, a thin film narrow band filter and a “Fabry-Perot” etalon to a detector. The output signal from the de... | 05/17/2005 |
| 6890771 | Plasma processing method using spectroscopic processing unit A plasma processing method using a spectroscopic processing unit. The method includes separating spectrally plasma radiation emitted from a vacuum process chamber into component spectra, converting the component spectra into a time series of analogue electric signal... | 05/10/2005 |
| 6881352 | Disturbance-free, recipe-controlled plasma processing method A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitor... | 04/19/2005 |
| 6879867 | Process monitoring device for sample processing apparatus and control method of sample processing apparatus A monitor data acquisition section acquires a plurality of monitor data relating to a processing state of one sample in a processing apparatus, via sensors. A data selection section selects monitor data belonging to an arbitrary processing division included in a plu... | 04/12/2005 |
| 6879744 | Optical monitoring of thin film deposition An optical monitoring system for monitoring thin film deposition on a substrate includes a support bridge that is attached on an inside of a deposition chamber. The system further includes a fiber optic collimator having an optical fiber for incoming light, and anot... | 04/12/2005 |
| 6875701 | Nanotopography removing method To remove nanotopography (unevenness of wavelength: 0.2 mm through 20 mm, wave height: 1 through several hundreds nm) which has already been produced on a surface of a semiconductor wafer which has been regarded as impossible to remove conventionally, a half value w... | 04/05/2005 |
| 6861362 | Self-aligned contact process implementing bias compensation etch endpoint detection and methods for implementing the same A method for enhancing the fabrication process of a self-aligned contact (SAC) structure is provided. The method includes forming a transistor structure on a surface of a substrate. The method also includes forming a dielectric layer directly over the surface of the... | 03/01/2005 |
| 6849494 | Dielectric cure for reducing oxygen vacancies A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a dielectric. The bias causes oxygen vacancies in the dielectric to migrat... | 02/01/2005 |
| 6843927 | Method and apparatus for endpoint detection in electron beam assisted etching Techniques for detecting endpoints during semiconductor dry-etching processes are described. The dry-etching process of the present invention involves using a combination of a reactive material and a charged particle beam, such as an electron beam. In another embodi... | 01/18/2005 |
| 6844244 | Dual sided lithographic substrate imaging A device manufacturing method capable of imaging structures on both sides of a substrate, is presented herein. One embodiment of the present invention comprises a device manufacturing method that etches reversed alignment markers on a first side of a substrate to a ... | 01/18/2005 |
| 6842658 | Method of manufacturing a semiconductor device and manufacturing system Automatic generation of processing conditions will be provided, based on a database and process modeling by a computer equipped in semiconductor device fabrication equipment, by using input of wafer processing history including the thickness and quality. The compute... | 01/11/2005 |
| 6841400 | Method of manufacturing semiconductor device having trench isolation The invention relates to improvements in a method of manufacturing a semiconductor device in which deterioration in a transistor characteristic is avoided by preventing a channel stop implantation layer from being formed in an active region. After patterning a nitri... | 01/11/2005 |
| 6838294 | Focused ion beam visual endpointing A method for use in removing a portion of a semiconductor chip. The method comprises etching a backside of the semiconductor chip, the frontside including a first well with a first type of doping and a second well with a second type of doping; monitoring a backside ... | 01/04/2005 |
| 6837965 | Method and apparatus for etch processing with end point detection thereof A method and apparatus performing process end point detection in a semiconductor substrate processing system by monitoring for an increase in a flow of backside gas above a predetermined limit. ... | 01/04/2005 |
| 6825051 | Plasma etch resistant coating and process A protective coating is provided herein and methods of using the protective coating for susceptors used in semiconductor deposition chambers are described. In the preferred embodiments, CVD chamber equipment, such as a susceptor, is protected from plasma etch cleani... | 11/30/2004 |
| 6818562 | Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system A method and apparatus for operating a matching network within a plasma enhanced semiconductor wafer processing system that uses pulsed power to facilitate plasma processing. ... | 11/16/2004 |
| 6812044 | Advanced control for plasma process A method for monitoring plasma parameters during a plasma process such as a plasma etching process, comparing the measured plasma parameters to predetermined parameter specifications, and either terminating the plasma process or modifying the plasma process in progr... | 11/02/2004 |
| 6813534 | Endpoint detection in substrate fabrication processes In an endpoint detection method for a process performed in a substrate processing chamber with an energized gas, a process variable of the process is detected. The process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radia... | 11/02/2004 |
| 6805952 | Low contamination plasma chamber components and methods for making the same Components for use in plasma processing chambers having plasma exposed surfaces with surface roughness characteristics that promote polymer adhesion. The roughened surfaces are formed by plasma spraying a coating material such as a ceramic or high temperature polyme... | 10/19/2004 |
| 6803309 | Method for depositing an adhesion/barrier layer to improve adhesion and contact resistance A method for forming an adhesion/barrier liner with reduced fluorine contamination to improve adhesion and a specific contact resistance of metal interconnects including providing a semiconductor wafer having a process surface incl... | 10/12/2004 |
| 6804572 | Enhanced process and profile simulator algorithms A method enhances a process and profile simulator algorithm to predict the surface profile that a given plasma process will create. The method first tracks an energetic particle and then records the ion fluxes produced by the energetic particle. A local etch rate an... | 10/12/2004 |
| 6794302 | Dynamic feed forward temperature control to achieve CD etching uniformity A method for compensating CD variations across a semiconductor process wafer surface in a plasma etching process including a semiconductor wafer having a process surface comprising patterned features; carrying out a first plasma etching process wherein the semicondu... | 09/21/2004 |
| 6793765 | Situ monitoring of microloading using scatterometry with variable pitch gratings One aspect of the present invention relates to a system for determining and controlling a microloading effect in order to achieve desired feature depth on a wafer. The system includes a semiconductor structure having one or more layers formed over a substrate, a fab... | 09/21/2004 |
| 6794200 | Method for determining a preceding wafer, method for determining a measuring wafer, and method for adjusting the number of wafers In the method for determining a preceding wafer, at least one semiconductor wafer is determined as a preceding wafer among a plurality of semiconductor wafers constituting one lot. The preceding wafer is then subjected to a given process among a plurality of process... | 09/21/2004 |
| 6790686 | Method and apparatus for integrating dispatch and process control actions A method includes scheduling a plurality of workpieces for processing by a plurality of tools. Each workpiece has an associated priority. The processing in at least one of the tools is controlled in accordance with a process control model. A process control request ... | 09/14/2004 |
| 6778272 | Method of processing a semiconductor device A method of processing a semiconductor device is provided with several steps, including the step of generating plasma in a processing chamber to form or process a thin firm on a semiconductor device. The step of scanning, through a window, intensity modulated laser ... | 08/17/2004 |
| 6759253 | Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units The intensity of the light emitted from the light-emitting diode on wafer is measured and then the potential difference between the terminals of the light-emitting element, and the plasma current flowing thereinto are derived from measured light intensity. Since the... | 07/06/2004 |
| 6754552 | Control apparatus for plasma utilizing equipment A plurality of measuring devices to obtain numerical information necessary for control in process control of plasma utilizing equipment are connected to a first communication link, a plurality controllers to conduct numerical operations according to the numerical in... | 06/22/2004 |
| 6750977 | Apparatus for monitoring thickness of deposited layer in reactor and dry processing method A dry processing apparatus includes a processing chamber provided with a measurement window having a reflection portion which totally reflects light on the side of an inner surface thereof and a transmission portion. When a layer is not deposited, measurement light ... | 06/15/2004 |
| 6747239 | Plasma processing apparatus and method A plasma processing apparatus having a process chamber to process specimens; a status detecting unit for detecting the internal processing status of the process chamber and outputting a plurality of signals; and a signal converting unit for extracting an arbitrary n... | 06/08/2004 |
| 6723571 | Semiconductor device manufacturing method A semiconductor device manufacturing method including a plasma etching process performed on a surface of the semiconductor device is provided. The semiconductor device has a specific metal therein that is unexposed at the surface at the beginning stage of the etchin... | 04/20/2004 |
| 6716362 | Method for thin film laser reflectance correlation for substrate etch endpoint A method of etching a substrate, includes measuring a reflectance signal from a reflective material deposited on the substrate as the substrate is being etched, correlating the substrate etch rate to the reflectance signal from the reflective material, and using the... | 04/06/2004 |
