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| Number | Title | Issue Date |
| 7208326 | Edge protection process for semiconductor device fabrication An edge protection process for semiconductor device fabrication includes forming a protective layer on the circumferential edge region of a semiconductor substrate. The semiconductor substrate is placed in a plasma atmosphere and trench structures, such as deep tren... | 04/24/2007 |
| 7204934 | Method for planarization etch with in-situ monitoring by interferometry prior to recess etch A method for processing recess etch operations in substrates is provided including forming a hard mask over the substrate and etching a trench in the substrate using the hard mask, and forming a dielectric layer over the hard mask and in the trench, where the dielec... | 04/17/2007 |
| 7200523 | Method and system for filtering statistical process data to enhance process performance A data filter for filtering process data to a statistical control model is provided to enhance the performance of the control model. The data filter selects a set of template data from a set of statistical process data. A set of grids is formed comprising the set of... | 04/03/2007 |
| 7192505 | Wafer probe for measuring plasma and surface characteristics in plasma processing environments There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integ... | 03/20/2007 |
| 7182879 | Plasma processing method A plasma processing method, in which a process gas is introduced into an evacuated process chamber for subjecting the target object to a plasma processing. The plasma processing method is featured in that at least a part of the process gas exhausted from the process... | 02/27/2007 |
| 7181306 | Enhanced plasma etch process A method of operating a plasma etcher wherein gas is introduced into the etcher at a substantially higher rate than a previous standard rate for a desired etch selectivity, and the throttle valve's open value is set to a substantially greater open value than a previ... | 02/20/2007 |
| 7175875 | Method and apparatus for plasma processing The apparatus for processing an in-process substrate by generating a plasma have a processing chamber with an observation window, in which the in-process substrate is disposed; plasma generating means for generating a plasma in the inside of the processing chamber; ... | 02/13/2007 |
| 7176042 | Laser beam irradiation method that includes determining a thickness of semiconductor prior to crystallizing A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is fo... | 02/13/2007 |
| 7169695 | Method for forming a dual damascene structure A method for forming a dual damascene feature is provided. Vias are formed in an etch layer. A trench patterned mask is provided over the etch layer. A trench is etched, where the etching the trench comprises a cycle of forming protective sidewalls over the sidewall... | 01/30/2007 |
| 7169625 | Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring A method and apparatus for automatic determination of semiconductor plasma chamber matching a source of fault are provided. Correlated plasma attributes are measured for process used for calibration both in a chamber under study and in a reference chamber. Principal... | 01/30/2007 |
| 7166233 | Pulsed plasma processing method and apparatus In a method for performing a plasma-assisted treatment on a substrate in a reactor chamber by: introducing at least one process gas into the reactor chamber; and creating a plasma within the reactor chamber by establishing an RF electromagnetic field within the cham... | 01/23/2007 |
| 7160813 | Etch back process approach in dual source plasma reactors A method is disclosed for removing a polysilicon layer from a semiconductor wafer, in which a downstream plasma source is used first to planarize the wafer, removing contours in the polysilicon layer caused by deposition over lithographic features, such as via holes... | 01/09/2007 |
| 7158848 | Process monitoring device for sample processing apparatus and control method of sample processing apparatus A plasma processing apparatus for processing a sample within a vacuum vessel, including: a plurality of sensors for detecting plural kinds of information relating to a processing state of the sample as monitor data; data selecting means for selecting a detection tim... | 01/02/2007 |
| 7153779 | Method to eliminate striations and surface roughness caused by dry etch A plasma etch process for forming a high aspect ratio contact opening through a silicon oxide layer is disclosed. The silicon oxide layer is plasma etched using etch gases that include at least one organic fluorocarbon gas. At least one etch gas is used that include... | 12/26/2006 |
| 7153781 | Method to etch poly Si gate stacks with raised STI structure In a process for etching poly Si gate stacks with raised STI structure where the thickness of poly Si gates at the AA and STI are different, the improvement comprising: a) etching a gate silicide layer+a poly Si 2 layer; ... | 12/26/2006 |
| 7148151 | Dry etching method, fabrication method for semiconductor device, and dry etching apparatus When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically,... | 12/12/2006 |
| 7139632 | Enhanced process and profile simulator algorithms A method for enhancing a process and profile simulator algorithm predicts the surface profile that a given plasma process will create. An energetic particle is first tracked. The ion fluxes produced by the energetic particle are then recorded. A local etch rate and ... | 11/21/2006 |
| 7133137 | Integrated scanning and ocular tomography system and method Systems and methods of the present invention measure at least one reflecting surface of an object disposed along an optical path. In some embodiments a measured optical interference signal for each of at least three wavelengths of reflected light may be used to dete... | 11/07/2006 |
| 7132302 | Method of increasing cell retention capacity of silicon nitride read-only-memory cell A method of increasing the cell retention capacity of a silicon nitride read-only-memory on a wafer. The method includes carrying out a baking process after performing the last plasma treatment of the wafer but before a wafer sort test. ... | 11/07/2006 |
| 7129104 | Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption Devices and techniques for coupling radiation to intraband quantum-well semiconductor sensors that are insensitive to the wavelength of the coupled radiation. At least one reflective surface is implemented in the quantum-well region to direct incident radiation towa... | 10/31/2006 |
| 7122735 | Quantum well energizing method and apparatus A method and apparatus that converts energy provided by a chemical reaction into energy for charging a quantum well device. The disclosed apparatus comprises a catalyst layer that catalyzes a chemical reaction and captures hot electrons and hot phonons generated by ... | 10/17/2006 |
| 7118926 | Method of optimizing seasoning recipe for etch process A method for optimizing a seasoning recipe for a dry etch process. The method includes setting a critical value of reproducibility, a main etch recipe, and a preliminary seasoning recipe. A test wafer is then etched using the preliminary seasoning recipe in a dry et... | 10/10/2006 |
| 7119272 | Gas specie electron-jump chemical energy converter An apparatus and method for extracting energy is provided. In one aspect the method includes using chemical reactions to generate vibrationally excited molecules, such as high-quantum-number-vibrationally-excited gas molecules in a region. The vibration energy in th... | 10/10/2006 |
| 7115519 | Method for plasma treatment A method for plasma treatment etches an SiC layer with an increased etching rate and enhanced selectivities of SiC with respect to SiO2 and an organic layer. An etching gas is converted into plasma to etch SiC. The etching gas may include CHF3;... | 10/03/2006 |
| 7114404 | System and method for detecting flow in a mass flow controller Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment... | 10/03/2006 |
| 7115426 | Method and apparatus for addressing thickness variations of a trench floor formed in a semiconductor substrate A method for utilizing interference fringe patterns generated when milling a trench through a semiconductor substrate by a method such as FIB milling, to determine and optimize the thickness uniformity of the trench bottom. The interference fringes may be mapped and... | 10/03/2006 |
| 7105460 | Nitrogen-free dielectric anti-reflective coating and hardmask Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-... | 09/12/2006 |
| 7105454 | Use of ammonia for etching organic low-k dielectrics Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The di... | 09/12/2006 |
| 7105102 | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and sem... | 09/12/2006 |
| 7094613 | Method for controlling accuracy and repeatability of an etch process Embodiments of the invention generally relate to a method for etching in a processing platform (e.g. a cluster tool) wherein robust pre-etch and post-etch data may be obtained in-situ. The method includes the steps of obtaining pre-etched critical dimension (CD) mea... | 08/22/2006 |
| 7094355 | Local dry etching method This invention provides a local dry etching method comprising the step of removing an oxide film formed on the surface of a semiconductor water before unevenness on the semiconductor wafer is removed by scanning the surface of the semiconductor wafer at a controlled... | 08/22/2006 |
| 7094704 | Method of plasma etching of high-K dielectric materials A method of etching high dielectric constant materials using a halogen gas, a reducing gas and an etch rate control gas chemistry. ... | 08/22/2006 |
| 7084054 | Method for making an opening for electrical contact by etch back profile control A method and apparatus for etchback profile control. The method includes performing a first etch through a first dielectric layer to form a first via and a second dielectric layer, filling the first via with a BARC material to form a first BARC layer, and performing... | 08/01/2006 |
| 7084066 | Method of uniformly etching refractory metals, refractory metal alloys and refractory metal silicides This invention is directed to a process for etching a semiconductor device using an etchant composition to form a predetermined etched pattern therein. The semiconductor device typically has a plurality of layers. At least one of the layers comprises a refractory me... | 08/01/2006 |
| 7078687 | Thin film analyzing method The present invention provides is a thin film analyzing method which can be applied to various fields, and which makes it possible to detect and analyze in a simple manner, with high precision, a distribution of a specific component in a thin film formed on a suppor... | 07/18/2006 |
| 7072028 | Method and apparatus for chemical monitoring The present invention relates to monitoring chemicals in a process chamber using a spectrometer having a plasma generator, based on patterns over time of chemical consumption. The relevant patterns may include a change in consumption, reaching a consumption plateau,... | 07/04/2006 |
| 7067333 | Method and apparatus for implementing competing control models A method for controlling a process includes determining incoming state information associated with the process. A plurality of control models associated with the process is provided. A confidence metric is determined for each of the control models based on the incom... | 06/27/2006 |
| 7067432 | Methodology for in-situ and real-time chamber condition monitoring and process recovery during plasma processing A new methodology of monitoring process drift and chamber seasoning is presented based on the discovery of the strong correlation between chamber surface condition and free radical density in a plasma. Lower free radical density indicates either there is a significa... | 06/27/2006 |
| 7067417 | Methods of removing resistive remnants from contact holes using silicidation A contact hole can be formed in an insulating layer to expose a surface of an underlying silicon layer at a bottom of the contact hole having a first size. A metal silicide layer can be formed beneath the bottom of the contact hole and removed to form a void beneath... | 06/27/2006 |
| 7060626 | Multi-run selective pattern and etch wafer process A method for forming a semiconductor wafer comprising of applying a first patterned resist to at least one first predetermined region of a wafer where said at least one first predetermined region of said wafer are protected by said first patterned resist and a first... | 06/13/2006 |