Quotables
"It is my heart-warmed and world-embracing Christmas hope and aspiration that all of us, the high, the low, the rich, the poor, the admired, the despised, the loved, the hated, the civilized, the savage (every man and brother of us all throughout the whole earth), may eventually be gathered together in a heaven of everlasting rest and peace and bliss, except the inventor of the telephone. "
Mark Twain ; Christmas greetings, 1890
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| Number | Title | Issue Date |
| 7901952 | Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters The invention concerns a method of processing a wafer in a plasma reactor chamber by controlling plural chamber parameters in accordance with desired values of plural plasma parameters. The method includes concurrently translating a set of M desired values for M pla... | 03/08/2011 |
| 7795045 | Trench depth monitor for semiconductor manufacturing A method of manufacturing a semiconductor wafer having at least one device trench extending to a first depth position includes providing a semiconductor substrate having first and second main surfaces and a semiconductor material layer having first and second main s... | 09/14/2010 |
| 7713758 | Method and apparatus for optimizing a gate channel The invention can provide a method of processing a substrate using Gate-Optimization processing sequences and evaluation libraries that can include gate-etch procedures, COR-etch procedures, and evaluation procedures. ... | 05/11/2010 |
| 7700378 | Method and system for line-dimension control of an etch process A method and system for controlling a dimension of an etched feature. The method includes: measuring a mask feature formed on a top surface of a layer on a substrate to obtain a mask feature dimension value; and calculating a mask trim plasma etch time based on the ... | 04/20/2010 |
| 7695987 | Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring A method and apparatus for automatic determination of semiconductor plasma chamber matching a source of fault are provided. Correlated plasma attributes are measured for process used for calibration both in a chamber under study and in a reference chamber. Principal... | 04/13/2010 |
| 7695986 | Method and apparatus for modifying process selectivities based on process state information The present invention provides a method and apparatus for modifying process selectivities based on process state information. The method includes accessing process state information associated with at least one material removal process, determining at least one sele... | 04/13/2010 |
| 7662646 | Plasma processing method and plasma processing apparatus for performing accurate end point detection In a plasma processing method, a correlation between substrate type data and optical data is obtained by using a multivariate analysis; substrate type data is obtained from optical data based on the correlation when initiating a plasma processing; and a substrate ty... | 02/16/2010 |
| 7632690 | Real-time gate etch critical dimension control by oxygen monitoring A process and apparatus for controlling an etchant gas concentration in an etch chamber. The etchant gas concentration and an inert gas concentration are determined and the latter concentration is used to normalize the etchant gas concentration. The normalized value... | 12/15/2009 |
| 7588946 | Controlling system for gate formation of semiconductor devices A method of controlling gate formation of semiconductor devices includes determining the correlation between the step heights of isolation structures and the over-etching time by measuring step heights of isolation structures, determining an over-etching time based ... | 09/15/2009 |
| 7566574 | Method of performing a double-sided process A method of performing a double-sided process is provided. First, a wafer having a structural pattern disposed on the front surface is provided. Following that, a plurality of front scribe lines are defined on the structural pattern, and a filling layer is filled in... | 07/28/2009 |
| 7544521 | Negative bias critical dimension trim A method of trimming the critical dimension of an isolated line to a greater extent than a dense line is provided. A mask is formed of an organic material over the etch layer wherein the mask has at least a first region with a first pattern density and a second regi... | 06/09/2009 |
| 7494827 | Plasma etching method and plasma etching apparatus The plasma etching method first forms a coating film on the inner surface of the chamber. Next, an etching process is performed on a wafer under a condition in which the coating film is formed, and thereafter a reaction product adhered onto the coating film in the e... | 02/24/2009 |
| 7479395 | Method of monitoring a production process using a linear combination of measured variables with selected weights The invention relates to a method for monitoring a manufacturing process, which by using a linear combination of measured variables with judiciously chosen weighting, produces a suitable (optimal) signal for determining each parameter. The extraction of the paramete... | 01/20/2009 |
| 7440859 | Method for determining plasma characteristics Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of a plasma at two different frequencies, and determining at least one characteristic of the plasma u... | 10/21/2008 |
| 7439068 | Plasma monitoring method, plasma processing method, method of manufacturing semiconductor device, and plasma processing system Disclosed is a plasma monitoring method for detecting the amount of atomic radicals generated by dissociation of a molecular raw material gas during a plasma processing conducted by introducing the molecular raw material gas and a rare gas into a process atmosphere,... | 10/21/2008 |
| 7427519 | Method of detecting end point of plasma etching process A method of detecting an end point of a plasma etching process for etching a first layer on a second layer is described, the first layer producing a first etching product and the second layer a second etching product. Time-dependent intensity [Ij=1 to m(t... | 09/23/2008 |
| 7399711 | Method for controlling a recess etch process A method of controlling a recess etch process for a multilayered substrate having a trench therein and a column of material deposited in the trench includes determining a first dimension from a surface of the substrate to a reference point in the substrate by obtain... | 07/15/2008 |
| 7393700 | Low temperature methods of etching semiconductor substrates Methods of etching a semiconductor substrate may include providing a first gas that is chemically reactive with respect to the semiconductor substrate, and while providing the first gas, providing a second gas different than the first gas. More particularly, a molec... | 07/01/2008 |
| 7377992 | Method and apparatus for detecting end point A mask layer and a to-be-processed layer are irradiated with light to measure interference light formed of reflected lights from the mask layer and reflected lights from the to-be-processed layer. Thereafter, an interference component brought by the mask layer is re... | 05/27/2008 |
| 7376479 | Process monitoring device for sample processing apparatus and control method of sample processing apparatus A plasma processing method for processing a sample by using plasma on a lot unit basis, including: detecting plural kinds of information as monitor data relating to a processing state of the sample, using a plurality of sensors; selecting a detection time range of t... | 05/20/2008 |
| 7354778 | Method for determining the end point for a cleaning etching process A method is provided for determining the end point during cleaning etching of processing chambers by means of plasma etching, which is used for carrying out coating or etching processes during the manufacture of semiconductor components. The invention provides a met... | 04/08/2008 |
| 7347915 | Plasma in-situ treatment of chemically amplified resist A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening pl... | 03/25/2008 |
| 7338853 | High power radio frequency integrated circuit capable of impeding parasitic current loss A high power RF IC capable of impeding parasitic current loss and method of manufacturing the same. First a step of semiconductor front-side processing for the high power RF components that includes inductive components is performed. Afterwards, the backside of semi... | 03/04/2008 |
| 7332374 | Prealignment and gapping for RF substrates A method is provided for manufacturing electronic module assemblies comprising a plurality of substrates and a housing. The method comprises providing an alignment plate having a plurality of protrusions disposed through an upper surface thereof, wherein the protrus... | 02/19/2008 |
| 7329549 | Monitoring method of processing state and processing unit The present invention is a monitoring method of monitoring a change of a processing state of an object to be processed when a predetermined process is conducted to the object to be processed by using a processing unit. The method includes: a step of respectively set... | 02/12/2008 |
| 7314537 | Method and apparatus for detecting a plasma The present invention presents an improved apparatus and method for monitoring a material processing system, where the material processing system includes a processing tool, test signal source, and a filter/detector. The test signal source providing a first test sig... | 01/01/2008 |
| 7312865 | Method for in situ monitoring of chamber peeling A method for in situ monitoring of particles generated by a reaction by-product film peeling from an interior wall of a reaction chamber of a semiconductor fabrication apparatus to determine reaction chamber condition. The method includes the steps of: exciting the ... | 12/25/2007 |
| 7306955 | Method of performing a double-sided process A method of performing a double-sided process is provided. First, a wafer having a structural pattern disposed on the front surface is provided. Following that, a plurality of front scribe lines are defined on the structural pattern, and a filling layer is filled in... | 12/11/2007 |
| 7297560 | Method and apparatus for detecting endpoint The present invention presents a method for detecting an endpoint of an etch process for etching a substrate in plasma processing system (1) comprising: etching the substrate; measuring at least one endpoint signal; generating at least one filtered endpoint s... | 11/20/2007 |
| 7297287 | Method and apparatus for endpoint detection using partial least squares An apparatus and method for detection of a feature etch completion within an etching reactor. The method includes determining a correlation matrix by recording first measured data regarding a first etch process over successive time intervals to form a first recorded... | 11/20/2007 |
| 7294590 | System and method for removing charges with enhanced efficiency Method and apparatus for removing and neutralizing charges. The method includes loading a structure into a chamber. The structure includes a first surface and a plurality of charges away from the first surface. Additionally, the method includes supplying a first ion... | 11/13/2007 |
| 7286948 | Method for determining plasma characteristics Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different fr... | 10/23/2007 |
| 7265042 | Method for fabricating semiconductor device with gate spacer The present invention relates to a method for fabricating a semiconductor device with gate spacers. The method includes the steps of: forming a plurality of gate structures on a substrate; forming an insulation layer on the gate structures and the substrate; and etc... | 09/04/2007 |
| 7263408 | Method and system for converting tool process ability based upon work in progress characteristics The present invention is generally directed to methods and systems for converting tool processing ability based upon work in progress considerations. In one illustrative embodiment, the method includes identifying a plurality of wafers to be processed in one of a pl... | 08/28/2007 |
| 7259027 | Low energy dose monitoring of implanter using implanted wafers A method for processing semiconductor wafers, e.g., silicon. The method includes providing a monitor wafer, which is made of a crystalline material. The method includes introducing a plurality of particles within a depth of the material, whereupon the plurality of p... | 08/21/2007 |
| 7258838 | Solid state molecular probe device A solid state nanopore device including two or more materials and a method for fabricating the same. The device includes a solid state insulating membrane having an exposed surface, a conductive material disposed on at least a portion of the exposed surface of the s... | 08/21/2007 |
| 7244369 | Method for producing active or passive components on a polymer basis for integrated optical devices “A process for fabricating active and passive, polymer-based components for use in integrated optics. As a result of this process, active and passive optoelectronic components of a high quality having a high level of integration and high packing density are fabric... | 07/17/2007 |
| 7223914 | Pulsed electron jump generator A device and method for stimulating pulsed chemical reactions in a small volume of gaseous reactants. An emitter stimulates the reactions of a fuel oxidizer mixture and a collector converts the vibrational energy of the resulting products into useful energy. The dev... | 05/29/2007 |
| 7214289 | Method and apparatus for wall film monitoring A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled t... | 05/08/2007 |
| 7211196 | Method and system of discriminating substrate type A method and system for determining a substrate type during a seasoning process is presented. An optical signal is acquired from a process in a plasma processing system, and the optical signal is compared to a pre-determined threshold value. Depending upon the compa... | 05/01/2007 |
