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| Number | Title | Issue Date |
| 8163592 | Method of manufacturing thin film transistor, thin film transistor, and display unit A method of manufacturing a thin film transistor capable of simplifying the steps is provided. The method of manufacturing a thin film transistor includes the steps of: forming a gate electrode and a gate insulating film sequentially on a substrate; forming an oxide... | 04/24/2012 |
| 8026122 | Metal species surface treatment of thin film photovoltaic cell and manufacturing method A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate including a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and a... | 09/27/2011 |
| 8008110 | Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method A method for forming a thin film photovoltaic device is provided. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A chalcopyrite material is formed overlying the first... | 08/30/2011 |
| 8008112 | Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and ... | 08/30/2011 |
| 8008111 | Bulk copper species treatment of thin film photovoltaic cell and manufacturing method A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and ... | 08/30/2011 |
| 8003431 | Method for antireflection treatment of a zinc oxide film and method for manufacturing solar cell using the same Provided are a method for antireflection treatment of a zinc oxide film and a method for manufacturing a solar cell using the same. In the anti-reflection treatment, a substrate is prepared, then a polycrystalline zinc oxide film is formed on the substrate. A surfac... | 08/23/2011 |
| 8003430 | Sulfide species treatment of thin film photovoltaic cell and manufacturing method A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region, forming a first electrode layer overlying the surface region, forming a copper layer overlying the first electrode layer and form... | 08/23/2011 |
| 7960204 | Method and structure for adhesion of absorber material for thin film photovoltaic cell A method for forming a thin film photovoltaic device includes providing a transparent substrate comprising a surface region and forming a first electrode layer overlying the surface region. The method further includes forming a thin layer of copper gallium material ... | 06/14/2011 |
| 7951639 | Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride ... | 05/31/2011 |
| 7883929 | Methods of manufacturing non-volatile memory devices by implanting metal ions into grain boundaries of variable resistance layers Integrated circuit nonvolatile memory devices are manufactured by forming a variable resistance layer on an integrated circuit substrate. The variable resistance layer includes grains that define grain boundaries between the grains. Conductive filaments are formed a... | 02/08/2011 |
| 7642121 | LED bonding structures and methods of fabricating LED bonding structures A method is disclosed for fabricating an LED The method includes providing an LED chip having an epitaxial region comprising at least a p-type layer and an n-type layer, an ohmic contact formed on at least one of the p-type layer or the n-type layer, and a bond pad ... | 01/05/2010 |
| 7494840 | Optical device with IrOx nanostructure electrode neural interface An optical device with an iridium oxide (IrOx) electrode neural interface, and a corresponding fabrication method are provided. The method provides a substrate and forms a first conductive electrode overlying the substrate. A photovoltaic device having a first elect... | 02/24/2009 |
| 7432526 | Surface-passivated zinc-oxide based sensor A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an... | 10/07/2008 |
| 7390715 | Method of fabricating active layer thin film by metal chalcogenide precursor solution A method of fabricating an active layer thin film by a metal-chalcogenide precursor solution is provided, including the steps of: synthesizing a metal-chalcogenide precursor containing benzyl or benzyl derivative; dissolving the precursor in a solvent to produce a p... | 06/24/2008 |
| 7378310 | Method for manufacturing a memory device having a nanocrystal charge storage region A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. A layer of metal oxide having a first heat of formation is formed on the first... | 05/27/2008 |
| 7378286 | Semiconductive metal oxide thin film ferroelectric memory transistor The present invention discloses a novel transistor structure employing semiconductive metal oxide as the transistor conductive channel. By replacing the silicon conductive channel with a semiconductive metal oxide channel, the transistors can achieve simpler fabrica... | 05/27/2008 |
| 7344912 | Method for patterning electrically conducting poly(phenyl acetylene) and poly(diphenyl acetylene) Disclosed are methods of fabricating a memory cell structure. More specifically, a copper substrate, including but not limited to copper contacts and/or bit lines, can be formed within a metal-containing layer, for example. Optionally, one or more via openings can t... | 03/18/2008 |
| 7323356 | LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the st... | 01/29/2008 |
| 7253017 | Molding technique for fabrication of optoelectronic devices Charge splitting networks for optoelectronic devices may be fabricated using a nanostructured porous film, e.g., of SiO2, as a template. The porous film may be fabricated using surfactant temptation techniques. Any of a variety of semiconducting materials... | 08/07/2007 |
| 7202494 | FINFET including a superlattice A semiconductor device may include at least one fin field-effect transistor (FINFET) comprising a fin, source and drain regions adjacent opposite ends of the fin, and a gate overlying the fin. The fin may include at least one superlattice including a plurality of st... | 04/10/2007 |
| 7189656 | Method for manufacturing ag-oxide-based electric contact material and product of the same Although an Ag—CdO-based material has excellent electric properties such as deposition resistance, arc resistance and low contact resistance, which are required for an electric contact, the discharge standard provision in Japan, EC Directive on Waste from Electric... | 03/13/2007 |
| 7176107 | Hybrid substrate and method for fabricating the same A hybrid substrate, i.e., a substrate fabricated from different materials, and method for fabricating the same are presented. The hybrid substrate is configured for fabricating more than two different devices thereon, has a high thermal conductivity, and is configur... | 02/13/2007 |
| 7157641 | Organic photovoltaic cells with an electric field integrally-formed at the heterojunction interface A bi-layer photovoltaic cell, and method (100) of making same, with an electric field applied at the p-n heterojunction interface. The cell includes a first semiconductor layer including a binder, nanocrystals of an n-type semiconductor, and spatially bound c... | 01/02/2007 |
| 7153763 | Method for making a semiconductor device including band-engineered superlattice using intermediate annealing A method for making a semiconductor device may include forming a superlattice including a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at le... | 12/26/2006 |
| 7094441 | Low temperature interconnection of nanoparticles A polymeric linking agent enables the manufacture of photovoltaic cells on flexible substrates, including, for example, polymeric substrates. Photovoltaic cells may be fabricated by a relatively simple continuous manufacturing process, for example, a roll-to-roll pr... | 08/22/2006 |
| 7087831 | Photoelectric conversion device and method of production thereof A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers ... | 08/08/2006 |
| 7087833 | Nanostructure and nanocomposite based compositions and photovoltaic devices Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostruc... | 08/08/2006 |
| 7084002 | Method for manufacturing a nano-structured electrode of metal oxide The present invention relates to a method for manufacturing a nano-structured metal oxide electrode, and in particular, to a method for manufacturing a metal oxide electrode having a few tens or hundreds of nanometers in diameter that is well adapted to an electrode... | 08/01/2006 |
| 6967119 | Semiconductor laser device and method of fabricating the same There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provi... | 11/22/2005 |
| 6960718 | Method for manufacturing a photovoltaic element In a photovoltaic element according to the present invention, a first transparent conductive film, a second transparent conductive film, a p-type semiconductor film, an intrinsic semiconductor layer, a n-type semiconductor layer and a backside electrode are stacked ... | 11/01/2005 |
| 6951771 | Method of forming laminate and method of manufacturing photovoltaic device A method of forming a laminate and a method of manufacturing a photovoltaic device using the laminate are provided. The laminate forming method includes a first step of forming an intermediate layer on a base member, and a second step of forming a metal layer on the... | 10/04/2005 |
| 6933553 | Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor Provided is a field effect transistor. The field effect transistor includes an insulating vanadium dioxide (VO2) thin film used as a channel material, a source electrode and a drain electrode disposed on the insulating VO2 thin film to be space... | 08/23/2005 |
| 6929970 | Process for preparing nano-porous metal oxide semiconductor layers A process for preparing a layer of a nano-porous metal oxide semiconductor comprising the steps of: (i) providing metal oxide semiconductor nano-particles prepared by a wet precipitation process, (ii) heating said nano-particles at a temperature in the range of 250 ... | 08/16/2005 |
| 6924159 | Semiconductor substrate made of group III nitride, and process for manufacture thereof To provide a semiconductor substrate of a group III nitride with low defect density and little warp, this invention provides a process comprising such steps of: forming a GaN layer 2 on a sapphire substrate 1 of the C... | 08/02/2005 |
| 6916981 | Semiconductor layer, solar cell using it, and production methods and applications thereof The objects of the present invention are to provide semiconductor layers for obtaining solar cells having a relatively high energy conversion efficiency, solar cells using the same, and their production methods and uses; all of which are solved by providing semicond... | 07/12/2005 |
| 6908782 | High carrier concentration p-type transparent conducting oxide films A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxid... | 06/21/2005 |
| 6900382 | Gel electrolytes for dye sensitized solar cells Replacing liquid electrolytes with solid or quasi-solid electrolytes facilitates the production of photovoltaic cells using continuous manufacturing processes, such as roll-to-roll or web processes, thus creating inexpensive, lightweight photovoltaic cells using fle... | 05/31/2005 |
| 6800504 | Integrated circuit device and fabrication using metal-doped chalcogenide materials Methods of forming metal-doped chalcogenide layers and devices containing such doped chalcogenide layers include using a plasma to induce diffusion of metal into a chalcogenide layer concurrently with metal deposition. The plasma contains at least one noble gas of l... | 10/05/2004 |
| 6720202 | Photovoltaic cells Improved photovoltaic cells utilizing for a semiconductor layer, titanium dioxide powders, consisting of porous particles, ranging in size from 0.1 to 10 microns (10−6 meters), and possess relatively high bulk density combined with high surface area. | 04/13/2004 |
| 6709958 | Integrated circuit device and fabrication using metal-doped chalcogenide materials Methods of forming metal-doped chalcogenide layers and devices containing such doped chalcogenide layers include using a plasma to induce diffusion of metal into a chalcogenide layer concurrently with metal deposition. The plasma contains at least one noble gas of l... | 03/23/2004 |
