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| Number | Title | Issue Date |
| 5883017 | Compartmentalized substrate processing chamber A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first... | 03/16/1999 |
| 5858861 | Reducing nitride residue by changing the nitride film surface property A new method of changing the surface property of a nitride film from hydrophobic to hydrophillic and thereby reducing nitride residue after photolithography is described. A pad oxide layer is provided on the surface of a semiconductor substrate. A nitride... | 01/12/1999 |
| 5795356 | Microelectronic component fabrication facility, and process for making and using the facility A process for manufacturing microelectronic components that can be fabricated in a facility 1 including integrated circuits on silicon wafers, flat panel displays on glass substrates or any other microelectronic components fabricated in a similar fashion,... | 08/18/1998 |
| 5700696 | Method for preparation of conjugated arylene or heteroarylene vinylene polymer and device including same A technique is described for the preparation of conjugated arylene and heteroarylene vinylene polymers wherein conversion of the polymer precursor is effected at a temperature ranging from 150°-300° C. in the presence of forming gas. Studies have s... | 12/23/1997 |
| 5656557 | Process for producing various gases for semiconductor production factories Disclosed is a production process and apparatus of high-purity air and various air material gases for semiconductor production factories that, together with enabling the production of high-purity air, also enables the production high-purity nitrogen simul... | 08/12/1997 |
| 5637532 | Interconnect decoupling scheme Capacitive coupling between neighboring conductive lines of the semiconductor device is reduced by applying an alternating magnetic field in a direction perpendicular to the plane of the conductive lines.... | 06/10/1997 |
| 5610103 | Ultrasonic wave assisted contact hole filling A method of eliminating or substantially eliminating voids formed in the bottom of high aspect ratio holes following the physical vapor deposition of a material over the surface of a substrate. The method includes placing the substrate in an ultrasonic pr... | 03/11/1997 |
| 5516732 | Wafer processing machine vacuum front end method and apparatus A carrousel type wafer processing machine in which wafers are held in vertical orientations in holders on a rotatable plate and sequenced through a plurality of processing stations for processing, such as by the application of a sputtered film thereto, is... | 05/14/1996 |
| 5484748 | Method for storage of silicon wafer The single crystal silicon wafers which have undergone a treatment with a chemical liquid such as an acid or an alkali are stored without entailing contamination of their surfaces by causing the wafers to be immediately immersed, either directly or after ... | 01/16/1996 |
| 5462900 | Method of manufacturing semiconductor elements without burrs A method of manufacturing semiconductor elements with metal electrode films formed thereon in which the elements are spread on a metal screen having a mesh size small enough to prohibit the semiconductor elements from passing through it. The metal screen ... | 10/31/1995 |
| 5448488 | Computer-controlled individual chip management system for processing wafers Chips formed on respective wafers are numbered. A map in which chip positions are correlated with chip numbers is created. A process is specified for each individual chip. A host computer creates processing information from inputted lot information for ea... | 09/05/1995 |
| 5424254 | Process for recovering bare semiconductor chips from plastic packaged modules by thermal shock The method of the present invention is particularly directed to plastic packaged modules of the type wherein the contact zones of the chip are connected by wire-bonding to lead conductors and wherein the chip is molded in etch resistant resins. The openin... | 06/13/1995 |
| 5401692 | Method for minimizing particle generation on a wafer surface during high pressure oxidation of silicon A wafer 2 is supported polished (active) face down in a recess formed in the upper surface of a second wafer 4 which serves as a wafer support. The two wafers 2, 4 are disposed in an atmosphere of steam at 900° C. at a pressure of 500 psi which results i... | 03/28/1995 |
| 5380682 | Wafer processing cluster tool batch preheating and degassing method A wafer processing cluster tool, having one or more load-locks, is provided with one or more batch preheating modules that receive wafers only from the cluster tool transport module at the internal vacuum pressure of the machine. The loading, unloading, h... | 01/10/1995 |
| 5380567 | Hermetic coatings by heating hydrogen silsesquinoxane resin in an inert atmosphere The present invention relates to a method of forming a coating on a substrate in the absence of oxygen. The method comprises coating the substrate with a solution comprising a solvent and hydrogen silsesquioxane resin. The solvent is evaporated and a prec... | 01/10/1995 |
| 5348893 | Method for treatment of semiconductor wafer A method for the impartation of a mechanical distortion to a semiconductor wafer by the collision of particles against the surface of the semiconductor wafer is disclosed which represses the pollution of the semiconductor wafer with impurities from the pa... | 09/20/1994 |
| 5314848 | Method for manufacturing a semiconductor device using a heat treatment according to a temperature profile that prevents grain or particle precipitation during reflow Described is a method for manufacturing semiconductor devices which includes a heat treating process for heating and cooling semiconductor substrates mounted on a boat at a predetermined pitch according to a predetermined temperature profile, in order to ... | 05/24/1994 |
| 5314847 | Semiconductor substrate surface processing method using combustion flame In order to provide the processing required to prevent a semiconductor substrate from becoming contaminated or damaged, without heating it in a kiln, a combustion flame of a gas that is a mixture of hydrogen and oxygen is applied to the surface of the sem... | 05/24/1994 |
| 5294570 | Reduction of foreign particulate matter on semiconductor wafers A substantial reduction in the foreign particulate matter contamination on surfaces, such as the surfaces of semiconductor wafers, is achieved by treating the surfaces with a solution comprising a strong acid and a very small amount of a fluorine-containi... | 03/15/1994 |
| 5275976 | Process chamber purge module for semiconductor processing equipment A process chamber purge module (56) is provided, including a stack module (60) and a process chamber liner (62). The stack module comprises a plurality of quartz plates (100, 110, and 116) having flow apertures to permit radial and axial flow of a purge g... | 01/04/1994 |
| 5266527 | Conformal wafer chuck for plasma processing having a non-planar surface A method of processing a semiconductor wafer using a wafer chuck having a first end with a non-planar surface, the non-planar surface shaped such that a wafer supported at a plurality of points about its periphery will have a uniform pressure between its ... | 11/30/1993 |
| 5219613 | Process for producing storage-stable surfaces of polished silicon wafers Silicon wafers are first subjected to an oxidative treatment and subsequey to exposure to organosilicon compounds which contain at least one radical in the molecule which is hydrolyzably bound to the silicon and at least one radical in the molecule havin... | 06/15/1993 |
| 5110764 | Method of making a beveled semiconductor silicon wafer A semiconductor silicon wafer usable for integrated circuits has beveled portions unsymmetrically formed along circumferential edges of front and back surfaces thereof. An angle between an inclining surface of the beveled portion and a main surface on the... | 05/05/1992 |
| 5106787 | Method for high vacuum controlled ramping curing furnace for SOG planarization An apparatus is described for vacuum degassing and curing a spin-on-glass layer on an article. The machine has a chamber into which an article, such as at least one or more semiconductor wafers are moved by appropriate means. Means are provided for causin... | 04/21/1992 |
| 5089441 | Low-temperature in-situ dry cleaning process for semiconductor wafers A low-temperature (650° C. to 800° C.) in-situ dry cleaning process (FIG. 2) for removing native oxide (and other contaminants) from a semiconductor surface can be used with either multi-wafer or single-wafer semiconductor device manufacturing reactors.... | 02/18/1992 |
| 4983548 | Method of fabricating a semiconductor device including removal of electric charges A method of fabricating a semiconductor device comprises steps of accommodating a substrate on which the semiconductor device is to be fabricated in a container of an electrically insulating material, forming a film of a volatile organic solvent such that... | 01/08/1991 |
| 4983546 | Method for curing spin-on-glass film by utilizing ultraviolet irradiation A method for curing spin-on-glass formed on a wafer film which insulates the metal layers and flattens any step difference in the process for manufacturing a multi-layered metal layer of a highly integrated semiconductor device which comprises establishin... | 01/08/1991 |
| 4937206 | Method and apparatus for preventing cross contamination of species during the processing of semiconductor wafers A method for preventing cross-contamination of semiconductor wafers during processing comprising covering a surface portion of a support assembly with a process compatible material, engaging a semiconductor wafer with the support assembly, processing the ... | 06/26/1990 |
| 4883775 | Process for cleaning and protecting semiconductor substrates A process for the production of semiconductor devices which comprises washing a cleaned semiconductor substrate with or without one or more component parts formed thereon, with pure water, freezing the pure water containing the washed substrate, preservin... | 11/28/1989 |
| 4783225 | Wafer and method of working the same A wafer having chamfered bent portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer such as an orientation flatness. The chipping of the wafer can be prevented, and in coating the wafer with a photoresist, fo... | 11/08/1988 |
| 4756796 | Method of producing wafer There is disclosed a method of providing an elongated stock; producing a wafer comprising the steps of processing one end face of an elongated stock to form a first flat surface; cutting through one end portion of the stock transversely by a cutter to pro... | 07/12/1988 |
| 4603466 | Wafer chuck The wafer chuck disclosed herein is adapted to hold a semiconductor wafer during high energy treatment in a vacuum environment. The wafer is clamped by its rim to a circular domed plate so as to distort the wafer into close proximity with the domed face o... | 08/05/1986 |
| 4544446 | VLSI chemical reactor A VLSI chemical reactor includes a fluid flow guide spaced from the corresponding substrate in the form of a wafer for significantly reducing contamination in the processing of semiconductor wafers. Processing chemicals are introduced in a continuous proc... | 10/01/1985 |
| 4474831 | Method for reflow of phosphosilicate glass In a method for reflow of a phosphosilicate glass (PSG) layer applied to a semiconductor wafer, the wafer is placed in a processing chamber in parallel alignment with a planar blackbody source. The chamber is evacuated, and the source rapidly and uniforml... | 10/02/1984 |
| 4455325 | Method of inducing flow or densification of phosphosilicate glass for integrated circuits Phosphorus-doped silicon oxide glass is flowed on an integrated circuit by raising the pressure in which that integrated circuit is placed above atmospheric for a selected period of time and heating said phosphosilicate glass to a selected temperature suf... | 06/19/1984 |
| 4165402 | Chip-removing machining method and apparatus for semiconducting crystals, specifically suited for the production of force and pressure measuring cells A method and apparatus for shaping semiconducting crystals for utilization in force and pressure measuring devices by chip removing machining of at least one surface portion of the crystal member. The shaping is effected by mounting the crystal member to ... | 08/21/1979 |
| 4059467 | Method for removal of elastomeric silicone coatings from integrated circuits A technique is disclosed for the mechanical removal of elastomeric encapsulants from integrated circuits. The encapsulant to be removed is outlined by cutting, and the outlined area is cooled sufficiently either during or subsequent to cutting such that t... | 11/22/1977 |
| 4005523 | Semiconductor devices A process for the production of p-n junctions which comprises preparing a suitable silicon type-n crystal of 100Ω/cm to several kΩ/cm with the orientation (111), (112) and (110), heating the crystal to a temperature of between 700° C and 800° C, and a... | 02/01/1977 |
