Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 6890867 | Transistor fabrication methods comprising selective wet-oxidation A transistor gate is formed which comprises semiconductive material and conductive metal. Source/drain regions are formed proximate the transistor gate. In one implementation, the transistor gate and source/drain regions are exposed to a gas mixture comprising H | 05/10/2005 |
| 6887774 | Conductor layer nitridation Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon... | 05/03/2005 |
| 6887725 | Micro electron gun of quantum size effect type and flat display using such electron guns as well as methods of their manufacture A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in q... | 05/03/2005 |
| 6885466 | Method for measuring thickness of oxide film In a process of manufacturing a semiconductor device, after a gate oxide film is formed, the thickness of the gate oxide film is measured by measuring an exposure period defined from a time at which the oxide film is formed to a time at which the thickness of the ox... | 04/26/2005 |
| 6881682 | Method and structure for reducing leakage current in capacitors A method of forming a capacitor with reduced leakage current on a substrate in a semiconductor device is set forth. A first layer of a conductive material is formed over the substrate, and a second layer of a dielectric is formed over the first layer. The second lay... | 04/19/2005 |
| 6878415 | Methods for chemical formation of thin film layers using short-time thermal processes A method is provided for forming a thin film layer of a substrate. The method includes the steps of forming a thin surface layer containing a dopant material on the substrate, and short-time thermal processing of the doped surface layer with processing parameters se... | 04/12/2005 |
| 6872618 | Methods of forming ferroelectric capacitors with metal oxide for inhibiting fatigue A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxi... | 03/29/2005 |
| 6869891 | Semiconductor device having groove and method of fabricating the same A method for forming a plurality of grooves of a semiconductor device having of a plurality of MOS transistors is provided. A plurality of photoresist patterns are formed on a semiconductor substrate. Ions are implanted on a portion of the semiconductor substrate us... | 03/22/2005 |
| 6869892 | Method of oxidizing work pieces and oxidation system A method of oxidizing work pieces according to the present invention comprises the steps of: containing a plurality of work pieces W in a processing vessel 22 which has a predetermined length and is capable forming a vacuum therein, oxidizing surfaces of the ... | 03/22/2005 |
| 6869846 | Forming electronic structures having dual dielectric thicknesses and the structure so formed A structure including a first device and a second device, wherein the second device has a dielectric thickness greater than the dielectric thickness of the first device, and the method of so forming the structure. ... | 03/22/2005 |
| 6867150 | Ozone treatment method and ozone treatment apparatus The invention concerns an ozone treatment method and an ozone treatment apparatus for performing a treatment such as the formation and reformation of an oxide film, the removal of a resist film by blowing an ozone gas onto a surface of a substrate such as a semicond... | 03/15/2005 |
| 6867114 | Methods to form a memory cell with metal-rich metal chalcogenide The invention relates to the fabrication of a resistance variable material cell or programmable metallization cell. The processes described herein can form a metal-rich metal chalcogenide, such as, for example, silver-rich silver selenide. Advantageously, the proces... | 03/15/2005 |
| 6864191 | Hydrogen barrier layer and method for fabricating semiconductor device having the same The present invention provides a hydrogen barrier layer able to prevent diffusions of hydrogen into a capacitor and a method for fabricating a semiconductor device having the same. The inventive method includes the steps of: depositing a zirconium-titanium oxide lay... | 03/08/2005 |
| 6864125 | Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3 This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3 in the oxidizing ambiance gr... | 03/08/2005 |
| 6855642 | Method for fabricating semiconductor integrated circuit device A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vic... | 02/15/2005 |
| 6855606 | Semiconductor nano-rod devices In a method of manufacturing a semiconductor device, a semiconductor layer is patterned to form a source region, a channel region, and a drain region in the semiconductor layer. The channel region extends between the source region and the drain region. Corners of th... | 02/15/2005 |
| 6855994 | Multiple-thickness gate oxide formed by oxygen implantation A semiconductor device including a gate oxide of multiple thicknesses for multiple transistors where the gate oxide thicknesses are altered through the growth process of implanted oxygen ions into selected regions of a substrate. The implanted oxygen ions accelerate... | 02/15/2005 |
| 6852645 | High temperature interface layer growth for high-k gate dielectric The present invention pertains to methods for forming high quality thin interface oxide layers suitable for use with high-k gate dielectrics in the manufacture of semiconductor devices. An ambient that contains oxygen and a reducing agent is utilized to grow the lay... | 02/08/2005 |
| 6849545 | System and method to form a composite film stack utilizing sequential deposition techniques A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer. Then, the adhesion layer is serially exposed to third and fourth reactive g... | 02/01/2005 |
| 6849512 | Thin gate dielectric for a CMOS transistor and method of fabrication thereof A method of making a thin gate dielectric includes implanting a barrier substance into a region of a silicon substrate. A capacitance-increasing material is implanted into the silicon substrate. An outside layer of the silicon substrate is oxidized to form a first s... | 02/01/2005 |
| 6846743 | Method for vapor deposition of a metal compound film A method for forming a metal compound film includes alternate irradiation of an organometal compound and oxygen or nitrogen radicals to deposit monoatomic layers of the metal compound. The organometal compound includes zirconium, hafnium, lanthanide compounds. The r... | 01/25/2005 |
| 6841432 | Semiconductor device and process for fabricating the same A semiconductor device comprising at least two thin film transistors on a substrate having an insulating surface thereon, provided that the thin film transistors are isolated by oxidizing the outer periphery of the active layer of each of the thin film transistors t... | 01/11/2005 |
| 6838394 | Flash memory device and a fabrication process thereof, method of forming a dielectric film A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidat... | 01/04/2005 |
| 6838397 | Silicon nitride film, and semiconductor device and method of manufacturing the same An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulation film is formed on the glass substrate under a temperature of strain ... | 01/04/2005 |
| 6835672 | Selective oxidation for semiconductor device fabrication An embodiment of the instant invention is a method of oxidizing a first feature (feature 108 and/or feature 104 of FIG. 1 and feature 314 of FIG. 3) while leaving a second feature substantially unoxidized (features 110 and | 12/28/2004 |
| 6835625 | Method for fabricating semiconductor device The method for fabricating a semiconductor device comprises the step of: forming a gate electrode on a semiconductor substrate with a gate insulation film formed therebetween; the step of implanting a dopant in the semiconductor substrate with the gate electrode as ... | 12/28/2004 |
| 6833329 | Methods of forming oxide regions over semiconductor substrates The invention encompasses a method of forming an oxide region over a semiconductor substrate. A nitrogen-containing layer is formed across at least some of the substrate. After the nitrogen-containing layer is formed, an oxide region is grown from at least some of t... | 12/21/2004 |
| 6831020 | Method for fabricating semiconductor device After a first gate insulating film is formed on each of first to third active regions, the first gate insulating film on the second active region is removed therefrom and a second gate insulating film thinner than the first gate insulating film is formed on the seco... | 12/14/2004 |
| 6827790 | Apparatus for stabilizing high pressure oxidation of a semiconductor device a method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O ... | 12/07/2004 |
| 6825133 | Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer A method of forming a charge balanced, silicon dioxide layer gate insulator layer on a semiconductor substrate, with reduced leakage obtained via nitrogen treatments, has been developed. Prior to thermal growth of a silicon dioxide gate insulator layer, negatively c... | 11/30/2004 |
| 6825114 | Selective stress-inducing implant and resulting pattern distortion in amorphous carbon patterning A method of forming a fuse for use in an integrated circuit using an amorphous carbon mask includes providing a mask material layer comprising amorphous carbon over a conductive layer. The mask material layer is doped with nitrogen, and an anti-reflective coating (A... | 11/30/2004 |
| 6818567 | Method for selectively oxidizing a silicon wafer The whole areas of both surfaces (10a and 10b) of a silicon wafer (10) are covered by silicon nitride films (13, 14) respectively through the intermediary of pad oxide films (11 and 12), and the pad oxide film ... | 11/16/2004 |
| 6818525 | Semiconductor device and method of providing regions of low substrate capacitance A semiconductor structure (1), comprising a isolation region (5) formed on a semiconductor material (10). A pillar (15) is formed in the semiconductor material under the isolation region, where the pillar is capped with a first dielectric... | 11/16/2004 |
| 6815315 | Method for electrochemical oxidation Disclosed is a method for the electrochemical oxidation of a semiconductor layer. In an electrochemical oxidation treatment for the production process of an electron source 10 (field-emission type electron source) as one of electronic devices, a control secti... | 11/09/2004 |
| 6812158 | Modular growth of multiple gate oxides Growth of multiple gate oxides. By implanting different sites of a wafer with different doses of an oxide growth retardant, the entire wafer can grow oxides of different thicknesses even after being exposed to the same oxidation environment. The process is modular i... | 11/02/2004 |
| 6808984 | Method for forming a contact opening A method for forming a contact opening is provided. After forming transistors on a substrate, a stacked resist layer including a resist layer without a silicon element and a resist layer with a silicon element covers the transistors and the substrate. The stacked re... | 10/26/2004 |
| 6806199 | Method for manufacturing silicon mirror wafer, silicon mirror wafer, and heat treatment furnace There are provided a manufacturing process for a mirror finished silicon wafer capable of manufacturing a mirror finished silicon wafer, having an excellent quality in which grown-in crystal defects are annihilated by heat-treating the silicon mirror finished wafer ... | 10/19/2004 |
| 6800538 | Semiconductor device fabrication method and semiconductor fabrication control method The method for fabricating a semiconductor device including a step of forming a gate insulation film on a semiconductor substrate 10, the method further comprises, before the step of forming the gate insulation film, the step of forming an insulation film ... | 10/05/2004 |
| 6794314 | Method of forming ultrathin oxide layer A method is disclosed for forming an ultrathin oxide layer of uniform thickness. The method is particularly advantageous for producing uniformly thin interfacial oxides beneath materials of high dielectric permitivity, or uniformly thin passivation oxides. Hydrofluo... | 09/21/2004 |
| 6794313 | Oxidation process to improve polysilicon sidewall roughness A new step is provided for the creation of polysilicon gate electrode structures. A layer of polysilicon is deposited over the surface of a layer of semiconductor material, the layer of polysilicon is etched using a layer of hardmask material for this purpose. The e... | 09/21/2004 |
