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| Number | Title | Issue Date |
| 4604304 | Process of producing thick layers of silicon dioxide An improvement in the formation of thick, i.e. 1,200 nanometers and greater, layers of silicon dioxide on a substrate is provided. The silicon dioxide layer is provided by the alternate deposition and oxidation of thin layers of silicon. In comparison to ... | 08/05/1986 |
| 4585492 | Rapid thermal annealing of silicon dioxide for reduced hole trapping Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including enhanced dielectric breakdown of MOS insulating layers and reduced trapping of holes by exposing a metal oxide semiconductor wafer includi... | 04/29/1986 |
| 4584205 | Method for growing an oxide layer on a silicon surface In an improved method for growing an oxide layer on a silicon surface of a semiconductor body, the semiconductor body is first provided with a silicon surface. A first oxide layer portion is then grown over the silicon surface in a first thermal oxidation... | 04/22/1986 |
| 4574468 | Method of manufacturing a semiconductor device having narrow coplanar silicon electrodes A method of manufacturing a semiconductor device, for example an SPS memory having narrow coplanar silicon electrodes. The electrodes are formed by etching grooves or slots (10) having a width in the submicron range into a polycrystalline silicon layer (3... | 03/11/1986 |
| 4574466 | High quality gate oxides for VLSI devices In a 1.2 micron CMOS process, the gate oxide is formed by growing a 1000 Angstrom thickness of sacrificial oxide, immediately performing an oxide strip and then effecting a thin gate oxidation. The gate oxidation step is characterized by a temperature ram... | 03/11/1986 |
| 4566173 | Gate insulation layer and method of producing such a structure The method in accordance with the invention is used for the production of field-effect transistors and preferably implemented in such a manner that a thin aluminum layer (2) is deposited on the surface of a silicon substrate (1), for example, by means of ... | 01/28/1986 |
| 4551907 | Process for fabricating a semiconductor device A metal silicide interconnection technique selectively forming a metal silicide layer on a silicon layer followed by heat treating the layers so that a surface silicon dioxide layer is formed and the metal silicide layer is forced down and is buried under... | 11/12/1985 |
| 4544418 | Process for high temperature surface reactions in semiconductor material A process for controlled surface reactions in semiconductor material which includes rapidly heating the material to a high temperature, maintaining the temperature for a short time and cooling the material all while the surface is exposed to a substance w... | 10/01/1985 |
| 4460417 | Method of manufacturing insulating film and electric device utilizing the same An insulating film is prepared by oxidizing an amorphous silicon layer containing boron or boron and germanium. The amorphous silicon layer is partially oxidized inwardly from the surface of the amorphous silicon layer to form the insulating film, while t... | 07/17/1984 |
| 4420497 | Method of detecting and repairing latent defects in a semiconductor dielectric layer Defects in dielectric layers exhibiting low dielectric strength on silicon substrates (11) are deliberately damaged during manufacture to allow their repair by the formation of dielectric plugs (13B). The defects are damaged by the application of an elect... | 12/13/1983 |
| 4377605 | Method for forming an insulating layer on a polycrystalline silicon layer of a semiconductor device using a two-step thermal oxidation technique When an insulating layer is formed on a polycrystalline silicon layer by thermally oxidizing the polycrystalline silicon layer, ambient gas to be used as an oxidizing gas comprises an oxygen gas and an inert gas. It is preferable that the ratio of oxygen ... | 03/22/1983 |
| 4376796 | Processing silicon wafers employing processing gas atmospheres of similar molecular weight At atmosphere X and an atmosphere Y, which may be an oxidizing atmosphere, are used in a process wherein silicon wafers are processed in a processing chamber, which is pressurized sequentially with a purging atmosphere, with the atmosphere X, and with the... | 03/15/1983 |
| 4360393 | Vapor deposition of H3 PO4 and formation of thin phosphorus layer on silicon substrates Provision for a source of phosphorus dopant on a silicon wafer, for the subsequent formation of an electrical p-n junction, by the vapor deposition, at atmospheric pressure, of phosphoric acid to form an essentially continuous film on a silicon wafer, sai... | 11/23/1982 |
| 4341818 | Method for producing silicon dioxide/polycrystalline silicon interfaces The efficient production of sequential layers of silicon dioxide and polycrystalline silicon is possible using a specific set of reaction steps. This set of reaction steps includes the oxidation of silicon at low oxygen pressure and at temperatures of the... | 07/27/1982 |
| 4293589 | Process for high pressure oxidation of silicon A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure... | 10/06/1981 |
| 4293590 | Process for high pressure oxidation of silicon A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure... | 10/06/1981 |
| 4282270 | Method for forming an insulating film layer of silicon oxynitride on a semiconductor substrate surface An insulating film layer consisting of silicon oxynitride is formed on a silicon semiconductor substrate surface by bringing a surface of a silicon substrate into contact with an ammonia gas atmosphere containing a gas comprising containing substance gas,... | 08/04/1981 |
| 4268538 | High-pressure, high-temperature gaseous chemical method for silicon oxidation Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by ... | 05/19/1981 |
| 4226649 | Method for epitaxial growth of GaAs films and devices configuration independent of GaAs substrate utilizing molecular beam epitaxy and substrate removal techniques A method of growing high-quality, super-abrupt, thin-film epitaxial layers independent of a GaAs substrate. An elemental semiconductor of germanium is used to initiate growth of an active material, typically doped n-type. A semi-insulating layer or n+ lay... | 10/07/1980 |
| 4214919 | Technique of growing thin silicon oxide films utilizing argon in the contact gas A particular embodiment involves the oxidation of hot monolithic silicon circuit substrates to grow thin silicon dioxide films ( | 07/29/1980 |
| 4154873 | Method of increasing field inversion threshold voltage and reducing leakage current and electrical noise in semiconductor devices A method for processing a semiconductor wafer to reduce electrical noise, to reduce the surface component of junction leakage current, to increase junction reverse breakdown voltage, and to increase field inversion voltage. Subsequent to last high tempera... | 05/15/1979 |
| 4116719 | Method of making semiconductor device with PN junction in stacking-fault free zone In a method of making a semiconductor device, a semiconductor wafer having a stacking fault originally contained in the wafer or produced in the wafer through the thermal oxidation of the wafer surface is subjected to an annealing treatment in a non-oxida... | 09/26/1978 |
| 4078945 | Anti-reflective coating for silicon solar cells An anti-reflective coating is formed integrally with a silicon solar cell by treating the cell with an acidic solution comprising a mixture of HF and H2 O2.... | 03/14/1978 |
| 4048350 | Semiconductor device having reduced surface leakage and methods of manufacture Surface leakage paths on bipolar and FET transistors may be significantly reduced by the presence of a fixed charge in an insulating layer adhered to a semiconductor wafer. The fixed charge consists of ions which are introduced into the insulating layer a... | 09/13/1977 |
| 4016006 | Method of heat treatment of wafers In a method of heat-treating a number of wafers each of which consists of a substance of poor heat conduction and a semiconductor layer formed on one surface of the substance, a method of heat treatment of wafers characterized in that the heat treatment i... | 04/05/1977 |
| 4007297 | Method of treating semiconductor device to improve its electrical characteristics Certain electrical characteristics of a semiconductor device which includes a body of semiconductor material are improved by exposing the semiconductor device to a substantially water vapor free atmosphere of chlorine and heating the device in this atmosp... | 02/08/1977 |
| 3950188 | Method of patterning polysilicon A semiconductor substrate is coated with an insulating film followed by a layer of polysilicon. The polysilicon layer is coated with a non-oxidizable mask, such as silicon nitride, and then oxidized to convert the exposed regions to silicon oxide and add ... | 04/13/1976 |
| 3943015 | Method for high temperature semiconductor processing A method for high temperature processing in device fabrication wherein multi-processing steps are performed in the absence of subjecting the unit to ambient conditions.... | 03/09/1976 |
| 3932239 | Semiconductor diffusion process This disclosure is directed to a semiconductor diffusion process for diffusing impurities into a semiconductor substrate. Open tube phosphorous diffusion process conditions are described wherein diffused region depth control is achieved by the initial dep... | 01/13/1976 |
