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| Number | Title | Issue Date |
| 7326437 | Method and system for coating polymer solution on a substrate in a solvent saturated chamber A method and apparatus of coating a polymer solution on a substrate such as a semiconductor wafer. The apparatus includes a coating chamber having a rotatable chuck to support a substrate to be coated with a polymer solution. A dispenser to dispense the polymer solu... | 02/05/2008 |
| 7326635 | Method and apparatus for stripping photo-resist A method for stripping a photo-resist includes the steps of: (a) wet stripping a photo-resist off from a substrate; and (b) rinsing the substrate under high-speed conveyance using an aqua knife. A speed of the conveyance of the substrate is 0.2 m/s or higher. Becaus... | 02/05/2008 |
| 7326650 | Method of etching dual damascene structure In an etching method for achieving a dual damascene structure by using at least one layer of a low-k film and at least one layer of a hard mask, a dummy film, which is ultimately not left in the dual damascene structure, is formed in at least one layer over the hard... | 02/05/2008 |
| 7324262 | Optical shutter and light scanning apparatus employing the same An optical shutter includes a cell having a transparent panel and a hydrophobic transparent insulation panel which are arranged to face each other, a transparent electrode formed on an outer surface of the hydrophobic transparent insulation panel, and an opaque drop... | 01/29/2008 |
| 7323699 | Apparatus and method for modifying an object A method and apparatus includes positioning a reactant on a surface in specific location and then directing an energy source from a device at the reactant such that it modifies the surface to either remove material or add material. ... | 01/29/2008 |
| 7323401 | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern... | 01/29/2008 |
| 7323422 | Dielectric layers and methods of forming the same High dielectric constant (high-k) materials are formed directly over oxidation-susceptible conductors such as silicon. A discontinuous layer is formed, with gaps between grains of the high-k material. Exposed conductor underneath the grain boundaries is oxidized or ... | 01/29/2008 |
| 7320937 | Method of reliably electroless-plating integrated circuit die The present invention is a reliable method of electroless-plating integrated circuit die that achieves high yield. Die are attached to a holder using a polyimide adhesive to eliminate voltage differences on bond pads which would otherwise interfere with the plating.... | 01/22/2008 |
| 7320905 | Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same This invention improves TFT characteristics by making an interface between an active layer, especially a region forming a channel formation region and an insulating film excellent, and provides a semiconductor device provided with a semiconductor circuit made of a s... | 01/22/2008 |
| 7320896 | Infrared radiation detector Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structur... | 01/22/2008 |
| 7320734 | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceil... | 01/22/2008 |
| 7319944 | Method for a predicting a pattern shape by using an actual measured dissolution rate of a photosensitive resist A computer implemented method for development profile simulation in accordance with an embodiment of the present invention includes calculating optical intensities in a photosensitive resist, calculating a spatial average value of the optical intensities, reading a ... | 01/15/2008 |
| 7316982 | Controlling carbon nanotubes using optical traps An embodiment of the present invention is a technique to control carbon nanotubes (CNTs). A laser beam is focused to a carbon nanotube (CNT) in a fluid. The CNT is responsive to a trapping frequency. The CNT is manipulated by controlling the focused laser beam. ... | 01/08/2008 |
| 7316966 | Method for transferring substrates in a load lock chamber Provided herein is a substrate processing system, which comprises a cassette load station; a load lock chamber; a centrally located transfer chamber; and one or more process chambers located about the periphery of the transfer chamber. The load lock chamber comprise... | 01/08/2008 |
| 7314835 | Plasma enhanced atomic layer deposition system and method A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process. A first process material is introduced within the process ... | 01/01/2008 |
| 7315346 | Lithographic apparatus and device manufacturing method A lithographic projection apparatus is disclosed. The apparatus includes a support structure constructed to support a patterning structure. The patterning structure is adapted to pattern a beam of radiation according to a desired pattern. The apparatus also includes... | 01/01/2008 |
| 7312163 | Atomic layer deposition methods, and methods of forming materials over semiconductor substrates The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a material over at least a portion of a substrate, and in which at least... | 12/25/2007 |
| 7312162 | Low temperature plasma deposition process for carbon layer deposition A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone... | 12/25/2007 |
| 7312146 | Semiconductor device interconnect fabricating techniques The present invention provides methods for fabricating integrated circuit structures for use in semiconductor wafer fabrication techniques. A Cu diffusion barrier/Cu seed sandwich layer is deposited on a substrate. A first sacrificial layer, deposited on the sandwic... | 12/25/2007 |
| 7312148 | Copper barrier reflow process employing high speed optical annealing A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier met... | 12/25/2007 |
| 7309875 | Nanocrystal protective layer for crossbar molecular electronic devices A molecular device is provided. The molecular device comprises a junction formed by a pair of crossed electrodes where a first electrode is crossed by a second electrode at a non-zero angle and at least one connector species including at least one switchable moiety ... | 12/18/2007 |
| 7309658 | Molecular self-assembly in substrate processing Systems and methods for molecular self-assembly are provided. The molecular self-assembly receives a substrate that includes one or more regions of dielectric material. A molecularly self-assembled layer is formed on an exposed surface of the dielectric material. Th... | 12/18/2007 |
| 7309269 | Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device In this embodiment, an interval distance between a desposition source holder 17 and an object on which deposition is performed (substrate 13) is reduced to 30 cm or less, preferably 20 cm or less, more preferably 5 to 15 cm, and a deposition source hol... | 12/18/2007 |
| 7303996 | High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics A method for treating a gate structure comprising a high-K gate dielectric stack to improve electric performance characteristics including providing a gate dielectric layer stack including a binary oxide over a silicon substrate; forming a polysilicon layer over the... | 12/04/2007 |
| 7303991 | Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition ... | 12/04/2007 |
| 7304354 | Buried guard ring and radiation hardened isolation structures and fabrication methods Semiconductor devices can be fabricated using conventional designs and process but including specialized structures to reduce or eliminate detrimental effects caused by various forms of radiation. Such semiconductor devices can include the one or more parasitic isol... | 12/04/2007 |
| 7303939 | Electro- and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 12/04/2007 |
| 7303982 | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpi... | 12/04/2007 |
| 7304001 | Fabrication methods of semiconductor integrated circuit device and photomask Under the condition that a semiconductor maker and a photomask maker are separated but these are mutually connected with a communication line, the semiconductor maker gives a photomask fabrication schedule information to the photomask maker via the communication lin... | 12/04/2007 |
| 7304002 | Method of oxidizing member to be treated A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidatio... | 12/04/2007 |
| 7304003 | Oxidizing method and oxidizing unit for object to be processed An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermin... | 12/04/2007 |
| 7304340 | Semiconductor storage elements, semiconductor device manufacturing methods therefor, portable electronic equipment and IC card A semiconductor storage element has a memory function body on opposite sides of a gate electrode formed on a semiconductor substrate. Each end of source/drain regions is located in the semiconductor substrate just under the memory function body and offset with respe... | 12/04/2007 |
| 7304264 | Micro thermal chamber having proximity control temperature management for devices under test A temperature unit to control a temperature of a device under test using a fluid includes a block disposed opposite the device under test and which defines a gap therebetween and through which the fluid passes across the device under test at a gap flow rate, and an ... | 12/04/2007 |
| 7305161 | Encapsulated photonic crystal structures Photonic crystal structures having a plurality of air columns and coating such structures to provide structures with improved performance are described herein. The coating includes a material that coats an uppermost portion of a photonic crystal structure, wherein t... | 12/04/2007 |
| 7301190 | Structures and methods to enhance copper metallization Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a meta... | 11/27/2007 |
| 7300885 | Film formation apparatus and method for semiconductor process A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by CVD, while supplying a first process gas for film formation and a second process gas for reacting with the first process gas to a process field accommodating... | 11/27/2007 |
| 7297557 | Method for chemically bonding Langmuir-Blodgett films to substrates A method of attaching a molecular layer to a substrate includes attaching a temporary protecting group(s) to a molecule having a molecular switching moiety with first and second connecting groups attached to opposed ends thereof. The temporary protecting group(s) is... | 11/20/2007 |
| 7294583 | Methods for the use of alkoxysilanol precursors for vapor deposition of SiOfilms A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more eff... | 11/13/2007 |
| 7294563 | Semiconductor on insulator vertical transistor fabrication and doping process A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conform... | 11/13/2007 |
| 7294209 | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask A battery-operated device provided on a thin-film battery and a method for making. Some embodiments provide a system that includes a vacuum chamber, a plurality of pairs of source and take-up reels within the vacuum chamber, including a first source reel that suppli... | 11/13/2007 |
