Class 438/754 - Electrically conductive material (e.g., metal, conductive oxide, etc.)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein the material undergoing wet chemical etching
No. of patents: 481
Last issue date: 05/14/2013

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Number	Title	Issue Date
6133158	Process for removing alkali metals from solvents used in the manufacture of semiconductor wafers The present invention provides a method for removing contaminant metals from a solvent used in the manufacture of a semiconductor wafer. The method may comprise the steps of bringing a solvent having contaminant metals therein into contact with a sacrific...	10/17/2000
6130170	Process improvements for titanium-tungsten etching in the presence of electroplated C4's A process and etchant solution for chemical wet etching of thin film metals in the presence of a protected metal. The etching solution has a pH range of about 2.7 to 4.0. The etching solution may include hydrogen peroxide, potassium sulfate, and potassium...	10/10/2000
6127282	Method for removing copper residue from surfaces of a semiconductor wafer A method for effectively removing copper residue from surfaces of a semiconductor wafer includes the step of immersing the semiconductor wafer having the copper residue into an acidic solution and then into a basic cleaning solution. The acidic solution i...	10/03/2000
6123088	Method and cleaner composition for stripping copper containing residue layers A cleaner composition for removing from within a microelectronic fabrication a copper containing residue layer in the presence of a copper containing conductor layer, and a method for stripping from within a microelectronic fabrication the copper containi...	09/26/2000
6117784	Process for integrated circuit wiring Metal wiring is provided in an integrated circuit by sputter coating onto a semiconductor substrate a copper seed layer; depositing and patterning a photoresist; electroplating or electrolessly plating a metal within the openings of the photoresist; strip...	09/12/2000
6117790	Method for fabricating a capacitor for a semiconductor memory configuration A method for fabricating a capacitor for a semiconductor memory configuration. In this case, a selectively etchable material is applied to a conductive support, which is connected to a semiconductor body via a contact hole in an insulator layer, and patte...	09/12/2000
6117775	Polishing method A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items, such as slurries and polishing pads, is reduced. A ...	09/12/2000
6114246	Method of using a polish stop film to control dishing during copper chemical mechanical polishing A method of using polish stop film to control dishing during copper chemical mechanical polishing. In one embodiment, the method comprises several steps. One step involves depositing a polish stop layer above a metal layer disposed on a semiconductor wafe...	09/05/2000
6107201	Aluminum spiking inspection method A method for inspection which involves the complete and sequential removal of an aluminum containing metallization layer, and other metal and insulator layers, from the surface of a silicon substrate. The layers are removed through sequential chemical etc...	08/22/2000
6096652	Method of chemical mechanical planarization using copper coordinating ligands A method of CMP of the semiconductor device where the method comprises the sequential steps of providing a semiconductor device, forming a copper layer on the semiconductor device and planarizing the copper layer with a medium. The medium comprises an abr...	08/01/2000
6093649	Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto Water based polishing slurries, comprising oxide polishing particles. The polishing slurries comprise an innovative (multi-modal) particle distribution for improved polishing performance....	07/25/2000
6090721	Aqueous solutions of ammonium fluoride in propylene glycol and their use in the removal of etch residues from silicon substrates Compositions of ammonium fluoride, propylene glycol, and water and methods of using these compositions to remove etch residues from silicon substrates which result from plasma or reactive ion etching of silicon substrate are provided. Not only do the comp...	07/18/2000
6087272	Method of producing thin film transistor On the surface of an insulating substrate 1 on which a transistor is formed, a first interlayer insulation film 8 is provided, and a first contact hole 9 and a metal interconnection layer 10 are formed. A second interlayer insulation film 11 is formed cov...	07/11/2000
6083847	Method for manufacturing local interconnect A method for manufacturing local interconnects includes providing a substrate with a gate oxide layer thereover, a first gate electrode and a second gate electrode above the gate oxide layer, spacers on the sidewalls of the gate electrodes, including a fi...	07/04/2000
6083840	Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys The present invention relates to an improved chemical-mechanical polishing (CMP) method for polishing a copper coated wafer containing a copper adhesion-promoting layer and a silicon-based layer. The method polishes copper layers with high removal rates, ...	07/04/2000
6083838	Method of planarizing a surface on a semiconductor wafer The present invention provides a method of planarizing a surface on a semiconductor wafer containing metal. In one embodiment, the method comprises selecting a slurry that contains conventional components of an abrasive and an oxidant. The oxidant is know...	07/04/2000
6083837	Fabrication of components by coining Metallic elements such as leads for connection to a semiconductor chip are made by embossing a metal sheet to form thin and thick regions, then etching or otherwise removing metal from the sheet in a nonselective removal process and arresting the removal ...	07/04/2000
6077789	Method for forming a passivation layer with planarization A method for forming a passivation layer with improved planarity includes patterning a top interconnect metal layer through two steps of etching, in which the metal layer is formed over a substrate that has device elements already formed thereon. The firs...	06/20/2000
6074960	Method and composition for selectively etching against cobalt silicide An etching method for use in integrated circuit fabrication includes providing a metal nitride layer on a substrate assembly, providing regions of cobalt silicide on first portions of the metal nitride layer, and providing regions of cobalt on second port...	06/13/2000
6074949	Method of preventing copper dendrite formation and growth The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines...	06/13/2000
6040002	Etching resist composition, pattern forming method making use of the same, printed-wiring board and its production An etching resist composition containing at least a polymeric compound having an acid value of not less than 35, a base, and water, and having a viscosity of 10 centipoises or below....	03/21/2000
6037271	Low haze wafer treatment process A process for removing a plurality of layers of different materials from a substrate having a silicon material base, at least one of said layers being a silicon oxide material and at least one other of said layers comprising a metal and the metal layer be...	03/14/2000
6027790	Etching process which protects metal The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising a buffe...	02/22/2000
6028011	Method of forming electric pad of semiconductor device and method of forming solder bump Electroless nickel plating and gold plating is performed on an aluminum electrode in order to construct a highly reliable electrode. The steps are: depositing zinc on the aluminum electrode with zincate treatment liquid containing sodium hydroxide and zin...	02/22/2000
6010969	Method of depositing films on semiconductor devices by using carboxylate complexes A method of forming a film on a substrate using chemical vapor deposition techniques and carboxylate complexes. The complexes and method are particularly suitable for the preparation of semiconductor structures....	01/04/2000
6007729	Carrier tape and manufacturing method of said carrier tape The purpose of this invention is to provide a type of carrier tape with inner leads arranged at small pitches. When first wirings 11, second wirings 12, and pitch-converting wirings 14 are formed by etching resin film 8, second wirings 12 and pitch-converting ...	12/28/1999
6008141	Semiconductor device and fabrication method thereof A semiconductor device suitable for increasing operation speed and microminiaturization is provided. First and second impurity diffusion regions are formed sandwiching an element isolation insulation film. After a metal film is deposited all over a substr...	12/28/1999
6007695	Selective removal of material using self-initiated galvanic activity in electrolytic bath Material of a given chemical type is selectively electrochemically removed from a structure by subjecting portions of the structure to an electrolytic bath. The characteristics of certain parts of the structure are chosen to have electrochemical reduction...	12/28/1999
5998297	Method of etching copper or copper-doped aluminum An embodiment of the instant invention is a method of etching a conductive structure comprised of copper and overlying a semiconductor substrate, the method comprising the step of: subjecting the conductive structure to a combination of plasma, an etchant...	12/07/1999
5993686	Fluoride additive containing chemical mechanical polishing slurry and method for use of same A chemical mechanical polishing slurry comprising an oxidizing agent, a fluoride containing additive and an abrasive and a method for using the fluoride containing additive chemical mechanical polishing slurry to remove tungsten and titanium from substrat...	11/30/1999
5990022	Method of evaluating a silicon wafer The evaluating method includes: dipping a mirror-polished silicon wafer in a dilute hydrofluoric acid; washing the surface of the silicon wafer; subjecting the surface-washed silicon wafer to a heat treatment in an oxygen atmosphere to form a thermal oxid...	11/23/1999
5990021	Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture This invention is a process for manufacturing a random access memory array. Each memory cell within the array which results from the process incorporates a stacked capacitor, a silicon nitride coated access transistor gate electrode, and a self-aligned hi...	11/23/1999
5968850	Wiring using chromium nitride and methods of fabrication therefor, liquid crystal display panels using the same wiring and methods of fabrication therefor A wiring according to the present invention is made of a chromium layer and a chromium nitride layer. To make the wiring, a layer of chromium is deposited on a substrate, and then a layer of chromium nitride is deposited. A layer of photoresist is covered...	10/19/1999
5963832	Removal of metal cusp for improved contact fill Disclosed is a method for providing improved step coverage of contacts with conductive materials, and particularly metals. An initial conductive layer is deposited over an insulating layer either before or after contact opening formation. The deposition p...	10/05/1999
5955384	Method of fabricating semiconductor device There is provided a method of fabricating a semiconductor device, including the steps of (a) forming impurity-diffused layers at a surface of a silicon semiconductor substrate in selected regions, (b) forming a refractory metal film over the impurity-diff...	09/21/1999
5942448	Method of making contacts on an integrated circuit A method of forming a contact on a body of semiconductor material within an opening in a passivation layer of silicon carbide in which the contact is a bond pad of aluminum on the semiconductor body, a barrier layer of TiW on the bond pad and over a porti...	08/24/1999
5935871	Process for forming a semiconductor device A process has been developed for a post-chemical mechanical polishing cleaning/passivting step to remove slurry particles (52) and form a passivating film (64) from a portion of an interconnect material within a conductive layer (42) without attacking the...	08/10/1999
5933757	Etch process selective to cobalt silicide for formation of integrated circuit structures An etch process selective to cobalt silicide is described for the selective removal of titanium and/or titanium nitride, unreacted cobalt, and cobalt reaction products other than cobalt silicide, remaining after the formation of cobalt silicide on an inte...	08/03/1999
5928968	Semiconductor pressure transducer structures and methods for making the same Disclosed is a method for making a semiconductor pressure transducer structure in CMOS integrated circuits. The method includes patterning a first metallization layer that lies over an first oxide layer to produce a first patterned metallization layer tha...	07/27/1999
5918134	Method of reducing transistor channel length with oxidation inhibiting spacers A method of fabricating a transistor. A dielectric layer is formed on an upper surface of a semiconductor substrate. A photoresist layer is then deposited on a dielectric layer and patterned with a photolithography exposure device to expose a region of th...	06/29/1999

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Class 438/754 - Electrically conductive material (e.g., metal, conductive oxide, etc.)