Did You Know...
...that in the early 1940s GE engineer James Wright was charged with a task of utmost importance to the war effort: develop a cheap substitute for rubber that could be used to produce tires, gas masks and a whole host of military gear. Wright tackled the task diligently -- and wound up inventing Silly Putty.
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| Number | Title | Issue Date |
| 5455193 | Method of forming a silicon-on-insulator (SOI) material having a high degree of thickness uniformity A silicon-on-insulator (SOI) material is formed from a bonded silicon wafer structure which includes, in order, a silicon handler substrate, an insulating oxide layer, a silicon device layer, a highly-doped silicon etch stop layer, and a top silicon subst... | 10/03/1995 |
| 5372675 | Method for producing fine structure for electronic device In a method for producing a fine semiconductor structure, a first layer is formed on a second layer, an etching-resistant mask is formed on the first layer, the second layer is etched in an etchant to form a desired shape thereof, a composition of the fir... | 12/13/1994 |
| 5344524 | SOI substrate fabrication A back-etch silicon-on-insulator SOI process that has a silicon handle wafer with an oxide layer bonded at room temperature to a silicon device wafer with an etch stop and silicon device layer. The surfaces that are bonded at room temperature are first co... | 09/06/1994 |
| 5334259 | Amorphous silicon solar cell and method of manufacture A method of amorphous silicon solar cell manufacture comprises forming thin films of transparent electrode, amorphous silicon, and backside electrode, in that order, on a transparent substrate. An alkali resistant metal is used For the backside electrode.... | 08/02/1994 |
| 5330932 | Method for fabricating GaInP/GaAs structures In one form of the invention, a method is disclosed for removing portions of successive layers of GaAs 34 and GaInP 32 comprising the steps of: performing an anisotropic reactive ion etch on the GaAs layer; and performing an isotropic wet etch on the GaIn... | 07/19/1994 |
| 5316618 | Etching method for obtaining at least one cavity in a substrate Flat-bottomed cavities are formed in a substrate (2) by a method comprising two etching steps: a first anisotropic etching through a mask (4) leaving exposed bands (6,8) of the substrate (2) and a second anisotropic etching through a mask leaving exposed ... | 05/31/1994 |
| 5277748 | Semiconductor device substrate and process for preparing the same A process for preparing a semiconductor device substrate comprises a step of making at least one surface of a first substrate composed of Si material porous, a step of oxidizing inside walls of pores in the resulting porous Si surface layer, a step of for... | 01/11/1994 |
| 5264076 | Integrated circuit process using a "hard mask" A layer of spin-on-glass is used as a hard mask for patterning an underlying layer of polysilicon. The patterned polysilicon may be used in the gate structures of field effect transistors.... | 11/23/1993 |
| 5261999 | Process for making strain-compensated bonded silicon-on-insulator material free of dislocations A silicon-on-insulator material is formed by a method which includes the steps of forming a p-type silicon epitaxial layer, doped with boron and a higher concentration of germanium, on the surface of a semiconductor silicon substrate, forming an additiona... | 11/16/1993 |
| 5223081 | Method for roughening a silicon or polysilicon surface for a semiconductor substrate This invention relates to a method for roughening a silicon or polysilicon substrate of a semiconductor. The method includes the steps of: depositing a metal layer onto the substrate, heating the metal layer and substrate through to form a metal silicide ... | 06/29/1993 |
| 5185277 | Method for the making of a transistor gate Disclosed is a method for making a mushroom gate for a microwave transistor. Three masking layers are deposited on the semiconductor body of a transistor. At least two of these masking layers are different and have selective solvents. After the opening of... | 02/09/1993 |
| 5173447 | Method for producing strained quantum well semiconductor laser elements A semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an Inx Ga1-x As strained quantum well layer and a GaAs barrier layer, and clad layers arr... | 12/22/1992 |
| 5147808 | High energy ion implanted silicon on insulator structure A silicon on insulator structure and method of making the structure. A high purity, substantially defect free silicon wafer is the basis for forming a final thin silicon layer on an insulator layer, the silicon having substantially the same chemical and s... | 09/15/1992 |
| 5137845 | Method of forming metal contact pads and terminals on semiconductor chips A method of forming metal contact terminals (35) of a determined size having an insulating substrate (17) with a metal land (18) formed thereon and a passivating layer (19) provided with an opening exposing a part of the metal land by forming intermediate... | 08/11/1992 |
| 5081002 | Method of localized photohemical etching of multilayered semiconductor body The sensitivity of localized photochemical etching to the optical and electrical properties of multilayered semiconductor materials is utilized for selectively etching a laterally extending undercut in a buried layer. The semiconductor body is immersed in... | 01/14/1992 |
| 4954218 | Method for etching a pattern A photoresist layer having a prescribed pattern is formed on a substrate to be etched. The substrate is immersed into a predetermined solution to form a layer on the substrate except on those portions where the photoresist layer is formed. The photoresist... | 09/04/1990 |
| 4944838 | Method of making tapered semiconductor waveguides Adiabatic mode control and structural reproducibility are achieved by a tapered semiconductor waveguide structure wherein semiconductor guiding layers are interleaved with stop-etch layers and each guiding layer extends further along the propagation axis ... | 07/31/1990 |
| 4588471 | Process for etching composite chrome layers Chrome/copper/chrome conductor arrays deposited on glass plates are etched with an aqueous acidic composition which contains an acid and a thiourea compound.... | 05/13/1986 |
| 4495026 | Method for manufacturing metallized semiconductor components A method for the manufacture of metallized semiconductor components, particularly power semiconductor components such as thyristors in which the semiconductor substrate is covered with at least three metal layers including a base layer attached to the sub... | 01/22/1985 |
| 4372803 | Method for etch thinning silicon devices An improved method for etch-thinning silicon devices using three sequential tches. The device is pre-thinned in a hot KOH-H2 O etch. The thinning etch is a hydrofluoric, nitric, acetic acids (1:3:10) and a precise amount of hydrogen peroxide mix... | 02/08/1983 |
| 4354898 | Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures Highly reproducible, optically flat mirror facets are created by contacting a predetermined area of the InGaAsP/InP heterostructure system with a chemical etchant for a time period sufficient to expose a substantially vertical crystallographic surface thr... | 10/19/1982 |
| 4255229 | Method of reworking PROMS PROM wafers having fuses on raised oxide are reworked by stripping the fuses and connectors, non-selectively etching the oxide layer to form a substantially planar, oxide surface resulting from the differential etching rate of the heavily phosphorus doped... | 03/10/1981 |
