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| Number | Title | Issue Date |
| 8420550 | Method for cleaning backside etch during manufacture of integrated circuits A method for manufacturing semiconductor substrates. The method includes providing a semiconductor wafer, which has an upper surface, a backside surface, and an edge region around a periphery of the semiconductor wafer. In a preferred embodiment, the upper surface i... | 04/16/2013 |
| 8318607 | Immersion lithography wafer edge bead removal for wafer and scanner defect prevention A method of performing a single step/single solvent edge bead removal (EBR) process on a photolithography layer stack including a photoresist layer and a top coat layer using propylene glycol monomethyl ether acetate (PGMEA) or a mixture of PGMEA and gamma-butyrolac... | 11/27/2012 |
| 8148271 | Substrate processing apparatus, coolant gas supply nozzle and semiconductor device manufacturing method A substrate processing apparatus comprises a processing chamber for storing a boat supporting multiple substrates and for processing the multiple substrates, a heater unit installed around the processing chamber for heating the substrates, and a coolant gas supply n... | 04/03/2012 |
| 7972969 | Method and apparatus for thinning a substrate A method is provided for controlling substrate thickness. At least one etchant is dispensed from at least one dispenser to a plurality of different locations on a surface of a spinning substrate to perform etching. A thickness of the spinning substrate is monitored ... | 07/05/2011 |
| 7833912 | Semiconductor device and method of manufacturing the same According to an aspect of the present invention, there is provided a semiconductor device including a semiconductor substrate which includes a number of chip areas, a processed film which is formed on the semiconductor substrate, and a ring-shaped pattern which is f... | 11/16/2010 |
| 7431861 | Etchant, replenishment solution and method for producing copper wiring using the same An etchant for copper and copper alloys, includes an aqueous solution containing: 14 to 155 g/liter of cupric ion source in terms of a concentration of copper ions; 7 to 180 g/liter of hydrochloric acid; and 0.1 to 50 g/liter of azole, the azole including nitrogen a... | 10/07/2008 |
| 7405139 | Prevention of backside cracks in semiconductor chips or wafers using backside film or backside wet etch A method of preventing the formation of cracks on the backside of a silicon (Si) semiconductor chip or wafer during the processing thereof. Also provided is a method for inhibiting the propagation of cracks, which have already formed in the backside of a silicon chi... | 07/29/2008 |
| 7396483 | Uniform chemical etching method The invention concerns a method of wet chemical etching of a wafer comprising at least one surface layer of silicon-germanium (SiGe) for etching by dispensing an etching solution deposited on a rotating wafer, the method being characterized in that it comprises a fi... | 07/08/2008 |
| 7387455 | Substrate processing device, substrate processing method, and developing device Rinsing nozzles 310a to 310e are moved on a wafer W while they are discharging rinsing solution 326. At that point, discharging openings 317a to 317e are contacted to developing solution 350 coate... | 06/17/2008 |
| 7368395 | Method for fabricating a nano-imprinting mold An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vert... | 05/06/2008 |
| 7365437 | Method of wet etching vias and articles formed thereby A method for forming smooth walled, prismatically-profiled through-wafer vias and articles formed through the method. An etch stop material is provided on a wafer, which may be a silicon wafer. A mask material is provided on the etch stop material and patterne... | 04/29/2008 |
| 7359026 | Liquid crystal display projector A liquid crystal projector comprises first, second and third liquid crystal panels having corresponding light sources, namely a red light source, a green light source, and a blue light source, wherein the red light source. The light sources are preferably Semi-condu... | 04/15/2008 |
| 7354869 | Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method A method for a substrate processing apparatus having a substrate holding mechanism and a chemical solution dispensing/sucking mechanism including a chemical solution dispensing port for supplying a first chemical solution and a chemical solution suction port, includ... | 04/08/2008 |
| 7351642 | Deglaze route to compensate for film non-uniformities after STI oxide processing A process and method for compensating for a radial non-uniformity on a wafer that includes the steps of: centering a rotational thickness non-uniformity of a film on the wafer about the axis of the spin susceptor following a CMP process; positioning a nozzle in the ... | 04/01/2008 |
| 7344955 | Cut-and-paste imprint lithographic mold and method therefor A method (and apparatus) of replicating a pattern on a structure, includes using imprint lithography to replicate a pattern formed on a first structure onto a portion of a second structure. ... | 03/18/2008 |
| 7341065 | Single wafer cleaning method to reduce particle defects on a wafer surface Methods of preventing air-liquid interfaces on the surface of a wafer in order to prevent the formation of particle defects on a wafer are presented. The air-liquid interfaces may be prevented by covering the entire surface of the wafer with liquid at all times duri... | 03/11/2008 |
| 7338909 | Micro-etching method to replicate alignment marks for semiconductor wafer photolithography A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process ... | 03/04/2008 |
| 7332432 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a do... | 02/19/2008 |
| 7312160 | Removing solution, cleaning method for semiconductor substrate, and process for production of semiconductor device The removing solution containing a cerium (IV) nitrate salt, periodic acid or a hypochlorite can be applied to metals containing copper, silver or palladium and also to metals containing other metals having a relatively large oxidation-reduction potential. ... | 12/25/2007 |
| 7288465 | Semiconductor wafer front side protection There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral reg... | 10/30/2007 |
| 7287537 | Megasonic probe energy director A megasonic cleaning apparatus configured to provide effective cleaning of a substrate without causing damage to the substrate is provided. The apparatus includes a megasonic probe, a transducer configured to energize the probe, and a heat transfer element disposed ... | 10/30/2007 |
| 7276449 | Gas assisted method for applying resist stripper and gas-resist stripper combinations A method for moving resist stripper across the surface of a semiconductor substrate includes applying a wet chemical resist stripper, such as an organic or oxidizing wet chemical resist stripper, to at least a portion of a photomask positioned over the semiconductor... | 10/02/2007 |
| 7271467 | Multiple oxide thicknesses for merged memory and logic applications Structures are provided for multiple oxide thicknesses on a single silicon wafer. In particular, structures are provided for multiple gate oxide thicknesses on a single chip. The chip can include circuitry including but not limited to the memory and logic technologi... | 09/18/2007 |
| 7267130 | Substrate processing apparatus The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, interm... | 09/11/2007 |
| 7264680 | Process and apparatus for treating a workpiece using ozone A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the processing chamber. The ozone oxidi... | 09/04/2007 |
| 7261828 | Bumping process A method of forming a plurality of bumps over a wafer mainly comprises providing the wafer having a plurality of bonding pads formed thereon, forming an under bump metallurgy (UBM) layer over the bonding pads wherein the UBM layer includes an adhesive layer, for exa... | 08/28/2007 |
| 7247209 | Dual outlet nozzle for the combined edge bead removal and backside wash of spin coated wafers An apparatus and method for the improved combined edge bead removal and backside wash of spin coated semiconductor wafers is disclosed. This is preferably accomplished by providing a nozzle having a plurality of outlets adapted for the ejection of a cleaning fluid o... | 07/24/2007 |
| 7237561 | Apparatus for cleaning semiconductor wafer including heating using a light source and method for cleaning wafer using the same An apparatus for cleaning a semiconductor wafer and method for cleaning a wafer using the same wherein, the apparatus includes a chamber on which a wafer is mounted, a revolving chuck mounted in the chamber for supporting and fixing the wafer, a nozzle for spraying ... | 07/03/2007 |
| 7226514 | Spin-rinse-dryer An inventive vertical spin-dryer is provided. The inventive spin-dryer may have a shield system positioned to receive fluid displaced from a substrate vertically positioned within the spin-dryer. The shield system may have one or more shields positioned to at least ... | 06/05/2007 |
| 7217606 | Method of forming vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, soi and thin film structures A method for forming NMOS and PMOS transistors that includes cutting a substrate along a higher order orientation and fabricating deep sub-micron NMOS and PMOS transistors on the vertical surfaces thereof. The complementary NMOS and PMOS transistors form a CMOS tran... | 05/15/2007 |
| 7208049 | Process solutions containing surfactants used as post-chemical mechanical planarization treatment Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce defects when employed as a rinse sol... | 04/24/2007 |
| 7186577 | Method for monitoring a density profile of impurities A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thi... | 03/06/2007 |
| 7179396 | Positive tone bi-layer imprint lithography method The present invention provides a method to pattern a substrate which features creating a multi-layered structure by forming, on the substrate, a patterned layer having protrusions and recessions. Formed upon the patterned layer is a conformal layer, with the multi-l... | 02/20/2007 |
| 7179753 | Process for planarizing substrates of semiconductor technology In a process for planarization of semiconductor substrates in which a layer which has been applied to a semiconductor substrate which has a trench and/or contact holes is removed such that the layer remains solely in the area of the trenches or contact holes, instea... | 02/20/2007 |
| 7171973 | Substrate processing apparatus The substrate processing apparatus has an enclosure structure enclosing a substrate support member to define a processing space. The enclosure structure has an opening closed by a shutter. A processing fluid supply unit, which supplies processing fluid, such as chem... | 02/06/2007 |
| 7172981 | Semiconductor integrated circuit device manufacturing method including static charge elimination A sealed type container accommodating a semiconductor substrate is positioned to a load port of a semiconductor manufacturing apparatus. The semiconductor substrate is taken out of the container. An ionizer is used for static-charge-eliminating the semiconductor sub... | 02/06/2007 |
| 7165560 | Etching method, etching apparatus, and method for manufacturing semiconductor device In order to reliably remove, by wet etching, a compound containing a metal and silicon, e.g., a silicate (101a) containing hafnium metal, the silicate (101a) is oxidized and then the oxidized silicate (101a) is wet-etched. | 01/23/2007 |
| 7163018 | Single wafer cleaning method to reduce particle defects on a wafer surface Methods of preventing air-liquid interfaces on the surface of a wafer in order to prevent the formation of particle defects on a wafer are presented. The air-liquid interfaces may be prevented by covering the entire surface of the wafer with liquid at all times duri... | 01/16/2007 |
| 7160808 | Chuck for supporting wafers with a fluid A method of relieving surface stress on a thin wafer by removing a small portion of the wafer substrate, the substrate being removed by applying a warm solution of KOH to the backside of the wafer while the wafer spins. The wafer may be supported on a rotatable plat... | 01/09/2007 |
| 7152289 | Method for forming bulk resonators silicon <110> substrate A method for forming a device on a substrate of silicon includes forming a first conductive layer onto the substrate, and forming a piezoelectric layer on the first portion of a first conductive layer. A second electrode is formed on the piezoelectric layer, a... | 12/26/2006 |
