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| Number | Title | Issue Date |
| 7935641 | Thin film etching method Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using th... | 05/03/2011 |
| RE42004 | Method for fabricating a semiconductor storage device having an increased dielectric film area A semiconductor device of the present invention is a semiconductor memory having a charge storage film. Recesses or holes which effectively increase the capacitance of a floating gate or a memory cell capacitor are formed in the charge storage film. These recesses o... | 12/21/2010 |
| 7838436 | Bottom electrode for MRAM device and method to fabricate it Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain et... | 11/23/2010 |
| 7754618 | Method of forming an apparatus having a dielectric containing cerium oxide and aluminum oxide A dielectric layer including cerium oxide and aluminum oxide acting as a single dielectric layer, and a method of fabricating such a dielectric layer, produces a reliable structure with a high dielectric constant (high-k) for use in a variety of electronic devices. ... | 07/13/2010 |
| 7442650 | Methods of manufacturing semiconductor structures using RIE process A method for etching on a semiconductors at the back end of line using reactive ion etching. The method comprises reduced pressure atmosphere and a mixture of gases at a specific flow rate ratio during plasma generation and etching. Plasma generation is induced by a... | 10/28/2008 |
| 7427569 | Metal etching process and rework method thereof A metal etching process is described. A substrate having a dielectric layer thereon is provided. An aluminum-copper alloy layer is formed on the dielectric layer. A hard mask layer is formed on the aluminum-copper alloy layer. A patterned photoresist layer is formed... | 09/23/2008 |
| 7416993 | Patterned nanowire articles on a substrate and methods of making the same Nanowire articles and methods of making the same are disclosed. A conductive article includes a plurality of inter-contacting nanowire segments that define a plurality of conductive pathways along the article. The nanowire segments may be semiconducting nanowires, m... | 08/26/2008 |
| 7402530 | Method for manufacturing semiconductor device and semiconductor device A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film... | 07/22/2008 |
| 7393788 | Method and system for selectively etching a dielectric material relative to silicon A method and system for selectively and uniformly etching a dielectric layer with respect to silicon and polysilicon in a dry plasma etching system are described. The etch chemistry comprises the use of fluorohydrocarbons, such as CH2F2 and CHF... | 07/01/2008 |
| 7384873 | Manufacturing process of semiconductor device A method of manufacturing a semiconductor device, includes: forming a resin layer with a resin containing an aromatic compound on a surface, where an electrode is formed, of a semiconductor substrate, by avoiding at least part of the electrode; removing an oxide fil... | 06/10/2008 |
| 7375037 | Fabrication method for semiconductor integrated circuit device To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. The... | 05/20/2008 |
| 7361606 | Method of forming a metal line and method of manufacturing display substrate having the same A method of forming a metal line is provided. A first metal layer and a second metal layer protecting the first metal layer are formed on a base substrate. The first metal layer includes aluminum or aluminum alloy. A photoresist pattern having a linear shape is form... | 04/22/2008 |
| 7341950 | Method for controlling a thickness of a first layer and method for adjusting the thickness of different first layers A method for controlling a thickness of a first layer of an electrical contact of a semiconductor device, whereby the semiconductor device comprises a semiconductor layer, a first layer and a second layer, whereby at least a part of the semi-conductor layer is cover... | 03/11/2008 |
| 7341955 | Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided. The method includes: forming an insulation layer over a substrate; forming a hard mask layer over the insulation layer; forming a photoresist pattern over the hard mask layer; forming a polymer over the ph... | 03/11/2008 |
| 7338906 | Method for fabricating semiconductor device The present invention relates to a method for fabricating a semiconductor device with a fine pattern even without decreasing a line width of a photoresist pattern. The method includes the steps of: forming a target etching layer on a substrate; forming a plurality o... | 03/04/2008 |
| 7276450 | Etching processes using CFfor silicon dioxide and CFfor titanium nitride Methods of etching a dielectric layer and a cap layer over a conductor to expose the conductor are disclosed. In one embodiment, the methods include the use of a silicon dioxide (SiO2) etching chemistry including octafluorocyclobutane (C4F... | 10/02/2007 |
| 7270761 | Fluorine free integrated process for etching aluminum including chamber dry clean A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma rea... | 09/18/2007 |
| 7265040 | Cleaning solution and method for selectively removing layer in a silicidation process A cleaning solution selectively removes a titanium nitride layer and a non-reacting metal layer. The cleaning solution includes an acid solution and an oxidation agent with iodine. The cleaning solution also effectively removes a photoresist layer and organic materi... | 09/04/2007 |
| 7259100 | Nanoparticles and method for making the same A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanopar... | 08/21/2007 |
| 7259101 | Nanoparticles and method for making the same A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanopar... | 08/21/2007 |
| 7232766 | System and method for surface reduction, passivation, corrosion prevention and activation of copper surface A system and method of passivating an exposed conductive material includes placing a substrate in a process chamber and injecting a hydrogen species into the process chamber. A hydrogen species plasma is formed in the process chamber. A surface layer species is redu... | 06/19/2007 |
| 7229563 | Plasma etching of Ni-containing materials An apparatus and method are described for etching Ni-containing films using gas phase plasma etching. Etching of Ti—Ni alloys is carried out by exposure to plasma comprising hydrogen halide (HX) and carbonyl etching gases. The Ti in the Ti—Ni alloy is etched via... | 06/12/2007 |
| 7204935 | Method of etching a metallic film on a substrate A method of etching a metallic film on a substrate. This method operates to inject an oxidizing agent through the use of a carrier gas to etch a source metal in the presence of a reducing agent such that the rate of etching can be controlled by controlling the flow ... | 04/17/2007 |
| 7176084 | Self-aligned conductive spacer process for sidewall control gate of high-speed random access memory A self-aligned conductive spacer process for fabricating sidewall control gates on both sides of a floating gate for high-speed RAM applications, which can well define dimensions and profiles of the sidewall control gates. A conductive layer is formed on the dielect... | 02/13/2007 |
| 7166517 | Semiconductor device and method of manufacture thereof The present invention provides a method of manufacturing a semiconductor device which includes an amorphous semiconductor film forming treatment of supplying a starting material gas containing germanium to a semiconductor substrate, thereby forming an amorphous semi... | 01/23/2007 |
| 7160779 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer that contacts a metal oxide layer. The metal oxide layer is generated by forming a metal layer, then oxidizing the metal layer. ... | 01/09/2007 |
| 7128844 | Metal/ceramic circuit board and method for producing same A metal layer 12 of aluminum or an aluminum alloy is formed on at least one side of a ceramic substrate 10, and a resist 14 having a predetermined shape is formed on the metal layer 12. Then, an etchant of a mixed solution prepared by mix... | 10/31/2006 |
| 7105458 | Method of etching semiconductor devices using a hydrogen peroxide-water mixture The present invention is a method of producing semiconductor devices and an etching liquid with which the titanium nitride film can be removed without thinning of the CoSi layer. A hydrogen peroxide-water mixture is used for removal of the titanium nitride film in t... | 09/12/2006 |
| 7087494 | Method for manufacturing semiconductor device and semiconductor device A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film... | 08/08/2006 |
| 7077973 | Methods for substrate orientation Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle in a first orientation on a re... | 07/18/2006 |
| 7078339 | Method of forming metal line layer in semiconductor device The present invention is provided to form a metal line layer in a semiconductor device, wherein at least one conductive layer of a plurality of conductive layers is etched, a side wall oxide film is formed on side walls of some conductive layers of the etched conduc... | 07/18/2006 |
| 7056758 | Electromechanical memory array using nanotube ribbons and method for making same Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports... | 06/06/2006 |
| 7048973 | Metal film vapor phase deposition method and vapor phase deposition apparatus A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active CuxCly, wherein x is 1 to 3, y is 1 to 3, gas, ... | 05/23/2006 |
| 7041566 | Method for forming inductor in semiconductor device The present invention relates to a method for forming an inductor in a semiconductor device. The method comprises the steps of forming a first metal layer on a semiconductor substrate in which a predetermined structure is formed, and then patterning the first metal ... | 05/09/2006 |
| 7037845 | Selective etch process for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, and modifying a first portion of the high-k gate dielectric layer to ensure that it may be removed selectively to a second portion o... | 05/02/2006 |
| 7029936 | Semiconductor laser, device having reduced contact resistance and manufacturing method thereof A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substra... | 04/18/2006 |
| 7018944 | Apparatus and method for nanoscale pattern generation A method and apparatus that produces highly ordered, nanosized particle arrays on various substrates. These regular arrays may be used as masks to deposit and grow other nanoscale materials. ... | 03/28/2006 |
| 7005375 | Method to avoid copper contamination of a via or dual damascene structure A process for preventing interconnect metal diffusion into the surrounding dielectric material. Prior to the formation of a metal interconnect in an opening of a dielectric region, the underlying metal surface is cleaned, during which metal can be deposited on the s... | 02/28/2006 |
| 6987067 | Semiconductor copper line cutting method A method of repairing a semiconductor chip containing copper is taught, whereby copper is selectively removed from the chip. The method involves processing the chip inside a chamber in which the chip is exposed to various gases and an energy source, such as a focuse... | 01/17/2006 |
| 6974778 | Semiconductor device manufactured with auxillary mask and method for producing the same The invention provides a semiconductor device having less defectives in shape of a patterned wiring layer even in a case of having a wiring layer for which patterning is required to be carried out over a longer period of etching time, and a method for producing the ... | 12/13/2005 |
