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| Number | Title | Issue Date |
| 8173480 | Image sensor and method for manufacturing the same An image sensor and a method of manufacturing an image sensor. A method of manufacturing an image sensor may include forming an interconnection and/or an interlayer dielectric over a semiconductor substrate including circuitry connected to an interconnection. A meth... | 05/08/2012 |
| 8017429 | Method for manufacturing photoelectric conversion device The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optica... | 09/13/2011 |
| 7977145 | Method of fabricating silicon/dielectric multi-layer semiconductor structures using layer transfer technology and also a three-dimensional multi-layer semiconductor device and stacked layer type image sensor using the same method, and a method of manufacturing a three-dimensional multi-layer semiconductor device and the stack type image sensor Fabrication of a three-dimensional semiconductor structure is provided by the present disclosure. A buffer oxide film, a nitride film, and an ONO dielectric layer are formed on a handle wafer. A semiconductor layer and an oxide film are formed on a donor wafer, whic... | 07/12/2011 |
| 7781253 | Image sensor and method of manufacturing the same An image sensor including a first epitaxial layer formed over a semiconductor substrate; first photodiodes formed spaced apart in the first epitaxial layer; a first isolation region electrically isolating the first photodiodes from each other; a second epitaxial lay... | 08/24/2010 |
| 7776642 | Quantum-well photoelectric device assembled from nanomembranes A quantum-well photoelectric device, such as a quantum cascade laser, is constructed of monocrystalline nanoscale membranes physically removed from a substrate and mechanically assembled into a stack. ... | 08/17/2010 |
| 7732246 | Method for fabricating vertical CMOS image sensor A method of fabricating a vertical CMOS image sensor is disclosed, to improve the integration with the decrease in size of pixel by minimizing the lateral diffusion, in which phosphorous and arsenic ions are implanted while controlling the dose and energy, the metho... | 06/08/2010 |
| 7682863 | CMOS image sensor and method for fabricating the same A Complementary Metal Oxide Semiconductor (CMOS) image sensor includes a red photodiode formed in an first epitaxial layer, an isolation layer formed with a contact region left in a partial area of the red photodiode, a green photodiode formed in a surface of the is... | 03/23/2010 |
| 7517716 | Method of forming optical sensor that includes three pairs of electrodes formed at different depths in a semiconductor substrate A method for forming an optical sensor. First, a structure which comprises a semiconductor substrate is provided. Then, a first electrode and a fourth electrode are formed at a first depth in the semiconductor substrate. Then, a second electrode and a fifth electrod... | 04/14/2009 |
| 7410887 | Controlled process and resulting device A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surfa... | 08/12/2008 |
| 7348255 | Semiconductor device and method for fabricating a semiconductor device A semiconductor structure has an active region on a substrate, and recessed portions are formed at lower edges of lateral portions of the semiconductor structure. Patterned first insulation layers for device isolation are buried into the recessed portions. Second in... | 03/25/2008 |
| 7288429 | Image sensor with vertically integrated thin-film photodiode An image sensor with a vertically integrated thin-film photodiode includes a bottom doped layer of a PIN photodiode imbedded in a dielectric layer, wherein a bottom surface of the bottom doped layer completely contacts its corresponding underlying pixel electrode. T... | 10/30/2007 |
| 7238545 | Method for fabricating tandem thin film photoelectric converter A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the ... | 07/03/2007 |
| 7189917 | Stacked photovoltaic device To provide a stacked photovoltaic device including: at least one pair of a first photovoltaic device and a second photovoltaic device stacked in order from a light incident side; and a selective reflection layer formed between the at least one pair of the first phot... | 03/13/2007 |
| 7157303 | Thin film transistor array substrate and fabricating method thereof A thin film transistor array substrate structure includes a plurality of data lines; a plurality of gate lines intersecting the data lines to define pixel areas, the gate line being adjacent to at least two pixel areas; a plurality of common lines disposed between t... | 01/02/2007 |
| 7138289 | Technique for fabricating multilayer color sensing photodetectors A multilayer color-sensing photodetector is fabricated in a semiconductor wafer having a single crystal structure to form a first, second and third layer of single crystal semiconductor material. A dielectric layer is formed that completely surrounds each single cry... | 11/21/2006 |
| 7132637 | Pixel sensor array having a layer of sensor material grown on a pre-fabricated wafer and method of manufacture thereof A sensor array having a plurality of pixels each including a sensor element coupled to a sensor input (24) of an electronic processing circuit is fabricated by first forming an integrated circuit having at least one array of electronic processing circuits ( | 11/07/2006 |
| 7122736 | Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) Å/second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a t... | 10/17/2006 |
| 7105373 | Vertical photodiode with heavily-doped regions of alternating conductivity types A single junction interdigitated photodiode utilizes a stack of alternating highly doped first regions of a first conductivity type and highly doped second regions of a second conductivity type, which are formed below and contact the first regions, to collect photon... | 09/12/2006 |
| 7060592 | Image sensor and fabricating method thereof An image sensor comprising an image sensing device layer, a silicon-on-insulator (SOI) layer, an optical device array and a substrate is provided. The SOI layer has a first surface and a second surface. The image sensing device layer is formed on the first surface o... | 06/13/2006 |
| 7030413 | Photovoltaic device with intrinsic amorphous film at junction, having varied optical band gap through thickness thereof In a photovoltaic device comprising a thin intrinsic amorphous semiconductor film inserted in a junction portion of a crystalline semiconductor substrate and an amorphous semiconductor film which have conductive types reverse to each other, an optical band gap of th... | 04/18/2006 |
| 7030313 | Thin film solar cell and method of manufacturing the same A thin film solar cell comprises a p-layer, an i-layer and an n-layer formed in this order as a pin junction on a substrate in which the p-layer and the i-layer are thin silicon films each containing a crystalline component, and the p-layer contains p-type impuritie... | 04/18/2006 |
| 6995411 | Image sensor with vertically integrated thin-film photodiode An image sensor has a vertically integrated thin-film photodiode. In one implementation, the image sensor has a substrate, an interconnection structure adjacent to the substrate, wherein the interconnection structure includes a top metal layer comprising a plurality... | 02/07/2006 |
| 6960718 | Method for manufacturing a photovoltaic element In a photovoltaic element according to the present invention, a first transparent conductive film, a second transparent conductive film, a p-type semiconductor film, an intrinsic semiconductor layer, a n-type semiconductor layer and a backside electrode are stacked ... | 11/01/2005 |
| 6924167 | Method of forming a bandgap tuned vertical color imager cell A combination of materials is used to form the photodiodes of a vertical color imager cell. The materials used to form the photodiodes have different band gaps that allow the photon absorption rates of the photodiodes to be adjusted. By adjusting the photon absorpti... | 08/02/2005 |
| 6864414 | Apparatus and method for integral bypass diode in solar cells A solar cell having a multijunction solar cell structure with a bypass diode is disclosed. The bypass diode provides a reverse bias protection for the multijunction solar cell structure. In one embodiment, the multifunction solar cell structure includes a substrate,... | 03/08/2005 |
| 6852566 | Self-aligned rear electrode for diode array element A PIN active pixel sensor array including self aligned encapsulated electrodes and a method for forming the same the method including forming an electrically conductive layer over a substrate; forming a first doped semiconductor layer over the conductive layer; phot... | 02/08/2005 |
| 6809250 | Repaired solar panel and method of preparing same In a method of repairing a solar panel having a defective solar cell or cells, a replacement cell (or cells) is glued onto a defective solar cell or cells of the solar panel, and is electrically integrated in the solar panel. ... | 10/26/2004 |
| 6803513 | Series connected photovoltaic module and method for its manufacture A photovoltaic module includes at least a first and a second photovoltaic cell each having a substrate electrode, a top electrode and a photovoltaic semiconductor body disposed therebetween in electrical communication with the substrate electrode and the top electro... | 10/12/2004 |
| 6790706 | Apparatus and method for leadless packaging of semiconductor devices The present invention is directed to a leadless and interconnected semiconductor package. The package includes a first chip having bond pads with a second chip having bond pads positioned on the first chip to form a vertically stacked package. Interconnections betwe... | 09/14/2004 |
| 6777715 | Integrated circuits using optical waveguide interconnects formed through a semiconductor wafer and methods for forming same An integrated circuit with a number of optical waveguides that are formed in high aspect ratio holes. The high aspect ratio holes extend through a semiconductor wafer. The optical waveguides include a highly reflective material that is deposited so as to line an inn... | 08/17/2004 |
| 6750394 | Thin-film solar cell and its manufacturing method A thin-film solar cell comprises a set of a transparent conductive layer and a photoelectric conversion layer laminated in this order on a substrate, wherein the photoelectric conversion layer is made of a p-i-n junction, the i-layer is made of a crystalline layer a... | 06/15/2004 |
| 6743974 | Silicon solar cell with germanium backside solar cell A multijunction solar cell comprising a silicon solar cell with a germanium solar cell formed on the backside of the silicon solar cell. The silicon solar cell and germanium solar cell are directly coupled via a p-p junction to inactivate interface dislocations. Pre... | 06/01/2004 |
| 6734452 | Infrared radiation-detecting device An AlxGa1−xAs/GaAs/AlxGa1−xAs quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as... | 05/11/2004 |
| 6723577 | Method of forming an optical fiber interconnect through a semiconductor wafer An integrated circuit with a number of optical fibers that are formed in high aspect ratio holes. The high aspect ratio holes extend through a semiconductor wafer. The optical fibers include a cladding layer and a core formed in the high aspect ratio hole. These opt... | 04/20/2004 |
| 6709885 | Method of fabricating image sensors using a thin film photodiode above active CMOS circuitry A method of fabricating an image sensor having pin photodiodes residing vertically atop underlying CMOS control circuitry. In the preferred technique, pin photodiodes fabricated in amorphous silicon are utilized. ... | 03/23/2004 |
| 6677516 | Photovoltaic cell and process for producing the same A dye-sensitized photovoltaic cell comprising an electroconductive support, a porous photovoltaic layer constituted with a porous semiconductor layer containing a photosensitizing dye, a hole transporting layer, and a support on a counter electrode side, ... | 01/13/2004 |
| 6653550 | Integrated thin-film photoelectric conversion module An integrated thin-film photoelectric conversion module includes a multi-layered film including a first electrode layer, a semiconductor layer and a second electrode layer stacked on a main surface of a substrate. The multi-layered film includes a cell re... | 11/25/2003 |
| 6653165 | Methods of forming semiconductor element, and semiconductor elements For efficiently forming a semiconductor element with excellent adhesion and environment resistance, a semiconductor element forming method is configured to have a step of forming a plurality of pin junctions of a silicon-based material on a substrate by a... | 11/25/2003 |
| 6613974 | Tandem Si-Ge solar cell with improved conversion efficiency P-type and n-type regions are defined in the first surface of a substrate upon which is formed an epitaxial layer of preferably Si--Ge material, preferably capped by Si material. During epitaxy formation, dopant in the defined regions diffuses down to for... | 09/02/2003 |
| 6600202 | Compact sensing apparatus having reduced cross section and methods of mounting same A compact sensing apparatus having reduced cross section and methods are provided for sensing the magnitude and direction of an electrical or magnetic field. The compact sensing apparatus and method preferably provide one of two transducer orientations in... | 07/29/2003 |
