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| Number | Title | Issue Date |
| 8119534 | Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth A substrate has at least one recess and/or protrusion formed in and/or on a surface thereof so as to scatter or diffract light generated in an active layer. The recess and/or protrusion is formed in such a shape that can reduce crystalline defects in semiconductor l... | 02/21/2012 |
| 8119533 | Pattern formation in semiconductor fabrication Provided is a semiconductor device. The device includes a substrate having a photo acid generator (PAG) layer on the substrate. The PAG layer is exposed to radiation. A photoresist layer is formed on the exposed PAG layer. The exposed PAG layer generates an acid. Th... | 02/21/2012 |
| 7998876 | Method of producing semiconductor element A method of producing a semiconductor element includes the steps of forming a wiring portion layer on a substrate; forming an interlayer insulation layer over the substrate and the wiring portion layer, in which a third insulation film, a second insulation film, and... | 08/16/2011 |
| 7994066 | Si surface cleaning for semiconductor circuits A method is disclosed for the cleaning of a Si surface at low temperatures. Oxide on the Si surface is brought into contact with Ge, which then sublimates off the surface. The Ge contamination remaining after the oxide removal is cleared away by an exposure to an al... | 08/09/2011 |
| 7985693 | Method of producing phase change memory device An area where a lower electrode is in contact with a variable resistance material needs to be reduced to lower the power consumption of a variable resistance memory device. The present invention is to provide a method of producing a variable resistance memory elemen... | 07/26/2011 |
| 7855151 | Formation of a slot in a silicon substrate A slot is formed that reaches through a first side of a silicon substrate to a second side of the silicon substrate. A trench is laser patterned. The trench has a mouth at the first side of the silicon substrate. The trench does not reach the second side of the sili... | 12/21/2010 |
| 7851370 | Patterning method A patterning method is provided. In the patterning method, a film is formed on a substrate and a pre-layer information is measured. Next, an etching process is performed to etch the film. The etching process includes a main etching step, an etching endpoint detectio... | 12/14/2010 |
| 7838435 | Method for forming semiconductor fine-pitch pattern A method for forming a fine-pitch pattern on a semiconductor substrate is provided. The method includes patterning the semiconductor substrate to form a plurality of fine lines, forming a thermal oxide layer on the fine lines, polishing the thermal oxide layer to ex... | 11/23/2010 |
| 7829472 | Method of forming at least an opening using a tri-layer structure A method of forming openings is disclosed. A substrate is first provided, and the tri-layer structure is formed on the substrate. The tri-layer structure includes a bottom photoresist layer, a silicon-containing layer and a top photoresist layer form bottom to top. ... | 11/09/2010 |
| 7799697 | Patterning method in semiconductor manufacturing process including an array of rectangular blocks and filling features A patterning method in a semiconductor manufacturing process includes the following steps. A base is provided. A target layer and a lining layer are sequentially formed on the surface of the base. The lining layer is patterned to form a plurality of rectangular bloc... | 09/21/2010 |
| 7799696 | Method of manufacturing an integrated circuit A method of manufacturing an integrated circuit including a memory device that includes the following processes: forming a mask layer structure above a composite structure including a resistivity changing layer and an electrode layer disposed above the resistivity c... | 09/21/2010 |
| 7786020 | Method for fabricating nonvolatile memory device A method for fabricating a nonvolatile memory device includes repeatedly stacking a stacked structure over a substrate to form a multi-stacked structure, wherein the stacked structure includes a conductive layer and an insulation layer, forming a photoresist pattern... | 08/31/2010 |
| 7732344 | High selectivity etching process for metal gate N/P patterning A method for fabricating a integrated circuit with improved performance is disclosed. The method comprises providing a substrate; forming a hard mask layer over the substrate; forming protected portions and unprotected portions of the hard mask layer; performing a f... | 06/08/2010 |
| 7687407 | Method for reducing line edge roughness for conductive features The present invention provides an interconnect structure, a method of manufacture therefore, and a method for manufacturing an integrated circuit including the same. The method for forming the interconnect structure, among other steps, includes subjecting a first po... | 03/30/2010 |
| 7648918 | Method of pattern formation in semiconductor fabrication Provided is a method of fabricating a semiconductor device. The method includes providing a substrate, forming a photo acid generator (PAG) layer on the substrate, exposing the PAG layer to radiation, and forming a photoresist layer on the exposed PAG layer. The exp... | 01/19/2010 |
| 7557045 | Manufacture of semiconductor device with good contact holes A wiring layer having an antireflection film of TiN or the like is formed on an insulating film covering a principal surface of a semiconductor substrate, and thereafter an interlayer insulating film including first to third insulating films is formed covering the w... | 07/07/2009 |
| 7550394 | Semiconductor device and fabrication process thereof A method of fabricating a semiconductor device includes a dry etching process of a silicon surface. The dry etching process is conducted by an etching gas containing at least one gas species selected from the group consisting of: HBr, HCl, Cl2, Br2 | 06/23/2009 |
| 7528074 | Method of manufacturing a semiconductor device and method of etching an insulating film During etching of a contact hole, not only the energy of ion irradiation but also the gas composition are altered to change the etching from a high-rate etching to a low-rate etching, thereby reducing the damage. In the low-rate etching where the gas composition is ... | 05/05/2009 |
| 7521372 | Method of fabrication of phase-change memory A phase-change memory and fabrication method thereof. The phase-change memory comprises a transistor, and a phase-change material layer. In particular, the phase-change material layer is directly in contact with one electrical terminal of the transistor. Particularl... | 04/21/2009 |
| 7517806 | Integrated circuit having pairs of parallel complementary FinFETs A method and structure for an integrated circuit structure that utilizes complementary fin-type field effect transistors (FinFETs) is disclosed. The invention has a first-type of FinFET which includes a first fin, and a second-type of FinFET which includes a second ... | 04/14/2009 |
| 7514368 | Flash memory device Embodiments relate to a flash memory device and a method of manufacturing a flash memory device, which may increase a coupling coefficient between a control gate and a floating gate by increasing a surface area of floating gate. In embodiments, a flash memory device... | 04/07/2009 |
| 7514367 | Method for manufacturing a narrow structure on an integrated circuit A method of manufacturing for providing a narrow line, such as a phase change bridge, on a substrate having a top surface, includes first forming a layer of first material on the substrate. Then, a layer of a pattern material is applied on the layer of first materia... | 04/07/2009 |
| 7479459 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus A semiconductor device manufacturing method and a semiconductor device manufacturing apparatus which enable to detect an etching end-point with high accuracy are provided. In etching of a lower layer formed on a semiconductor wafer using a mask which comprises a plu... | 01/20/2009 |
| 7442651 | Plasma etching method An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or “high-k” insulator is provided. T... | 10/28/2008 |
| 7431855 | Apparatus and method for removing photoresist from a substrate An apparatus and method for removing photoresist from a substrate, which includes treating the photoresist with a first reactant to cause swelling, cracking or delamination of the photoresist, treating the photoresist with a second reactant to chemically alter the p... | 10/07/2008 |
| 7425511 | Methods for manufacturing shallow trench isolation layers of semiconductor devices A method for forming a shallow trench isolation layer that includes: forming a pad oxide on a substrate; forming a hard mask silicon nitride on the pad oxide; forming a moat pattern on the pad oxide and hard mask; etching partially the pad oxide and hard mask with t... | 09/16/2008 |
| 7422969 | Multi-step process for patterning a metal gate electrode The present invention provides a method for patterning a metal gate electrode and a method for manufacturing an integrated circuit including the same. The method for patterning the metal gate electrode, among other steps, includes forming a metal gate electrode laye... | 09/09/2008 |
| 7419914 | Semiconductor device fabrication method A method for fabricating a semiconductor device with a borderless via/wiring structure includes the steps of performing borderless via etching using a resist mask to form a contact hole in an interlevel dielectric layer over a semiconductor substrate so as to expose... | 09/02/2008 |
| 7416992 | Method of patterning a low-k dielectric using a hard mask By using a non-metallic hard mask for patterning low-k dielectric materials of advanced semiconductor devices, an enhanced degree of etch fidelity is obtained. The present invention may readily be applied to via first-trench last, trench first-via last schemes. ... | 08/26/2008 |
| 7413995 | Etched interposer for integrated circuit devices In one embodiment, a package-to-package stack is assembled comprising a first integrated circuit package, and a second integrated circuit package which are mechanically and electrically connected using an interposer. In one embodiment, the interposer 106 incl... | 08/19/2008 |
| 7410901 | Submicron device fabrication A method for fabricating substrate material to include trenches and unreleased beams with submicron dimensions includes etching a first oxide layer on the substrate to define a first set of voids in the first oxide layer to expose the substrate. A second oxide layer... | 08/12/2008 |
| 7410906 | Functional device and method for producing the same, and image pickup device and method for producing the same A method of producing a functional device comprising an electrode layer provided as an upper layer of a layer containing an organic material, the layer being as a functional layer, wherein a step of patterning the electrode layer comprises a high speed etching step ... | 08/12/2008 |
| 7405162 | Etching method and computer-readable storage medium An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask... | 07/29/2008 |
| 7396711 | Method of fabricating a multi-cornered film Embodiments of the present invention describe a method of forming a multi-cornered film. According to the embodiments of the present invention, a photoresist mask is formed on a hard mask film formed on a film. The hard mask film is then patterned in alignment with ... | 07/08/2008 |
| 7393769 | Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the same According to some embodiments of the invention, transistors of a semiconductor device have a punchthrough protection layer, and methods of forming the same are provided. A channel-portion hole extends downward from a main surface of a semiconductor substrate. A punc... | 07/01/2008 |
| 7393788 | Method and system for selectively etching a dielectric material relative to silicon A method and system for selectively and uniformly etching a dielectric layer with respect to silicon and polysilicon in a dry plasma etching system are described. The etch chemistry comprises the use of fluorohydrocarbons, such as CH2F2 and CHF... | 07/01/2008 |
| 7390745 | Pattern enhancement by crystallographic etching A method for producing predetermined shapes in a crystalline Si-containing material that have substantially uniform straight sides or edges and well-defined inside and outside corners is provided together with the structure that is formed utilizing the method of the... | 06/24/2008 |
| 7384799 | Method to avoid amorphous-si damage during wet stripping processes in the manufacture of MEMS devices A method for forming a MEMS device using an amorphous silicon layer as a release layer includes etching superjacent films and using the amorphous silicon layer as an etch stop layer. The amorphous silicon layer is resistant to attack during the post-etch solvent str... | 06/10/2008 |
| 7381622 | Method for forming embedded strained drain/source regions based on a combined spacer and cavity etch process By patterning a spacer layer stack and etching a cavity in an in situ etch process, the process complexity, as well as the uniformity, during the formation of embedded strained semiconductor layers may be significantly enhanced. In an initial phase, the spacer layer... | 06/03/2008 |
| 7375037 | Fabrication method for semiconductor integrated circuit device To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. The... | 05/20/2008 |
