Did You Know...
...that the x-ray was discovered purely by accident? When German physicist Wilhelm Konrad von Roentgen was experimenting with cathode rays in 1895, he put an activated Crookes tube in a book and went out to lunch. When he returned, he discovered that a key that had also been placed in the book showed up as an image on the developed film!
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| Number | Title | Issue Date |
| 7678705 | Plasma semiconductor processing system and method An apparatus to perform semiconductor processing includes a process chamber; a plasma generator for generating a plasma in the process chamber; and a helical ribbon electrode coupled to the output of the plasma generator. ... | 03/16/2010 |
| 7442650 | Methods of manufacturing semiconductor structures using RIE process A method for etching on a semiconductors at the back end of line using reactive ion etching. The method comprises reduced pressure atmosphere and a mixture of gases at a specific flow rate ratio during plasma generation and etching. Plasma generation is induced by a... | 10/28/2008 |
| 7422982 | Method and apparatus for electroprocessing a substrate with edge profile control A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, a... | 09/09/2008 |
| 7413673 | Method for adjusting voltage on a powered Faraday shield An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied to a Faraday shield such that sputtering of a plasma can be controlled... | 08/19/2008 |
| 7384873 | Manufacturing process of semiconductor device A method of manufacturing a semiconductor device, includes: forming a resin layer with a resin containing an aromatic compound on a surface, where an electrode is formed, of a semiconductor substrate, by avoiding at least part of the electrode; removing an oxide fil... | 06/10/2008 |
| 7375036 | Anisotropic etch method A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, is disclosed, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method... | 05/20/2008 |
| 7359177 | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply a... | 04/15/2008 |
| 7342361 | Plasma source A plasma source is described. The source includes a reactive impedance element formed from a plurality of electrodes. By providing such a plurality of electrodes and powering adjacent electrodes out of phase with one another, it is possible to improve the characteri... | 03/11/2008 |
| 7338887 | Plasma control method and plasma control apparatus A method that controls the distribution of plasma generated in a vacuum chamber, for example, as part of a plasma thin film deposition or plasma etching process. For thin film deposition, the method serves to minimize variations in film thickness caused by the varia... | 03/04/2008 |
| 7329365 | Etchant composition for indium oxide layer and etching method using the same An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained b... | 02/12/2008 |
| 7316761 | Apparatus for uniformly etching a dielectric layer Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solen... | 01/08/2008 |
| 7311851 | Apparatus and method for reactive atom plasma processing for material deposition Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are move... | 12/25/2007 |
| 7311852 | Method of plasma etching low-k dielectric materials A semiconductor manufacturing process wherein a low-k dielectric layer is plasma etched with selectivity to an overlying mask layer. The etchant gas can be oxygen-free and include a fluorocarbon reactant, a nitrogen reactant and an optional carrier gas, the fluoroca... | 12/25/2007 |
| 7312415 | Plasma method with high input power A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside... | 12/25/2007 |
| 7282454 | Switched uniformity control A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the... | 10/16/2007 |
| 7279429 | Method to improve ignition in plasma etching or plasma deposition steps In one embodiment, the present invention relates to a method for increasing the ignition reliability of a plasma in a plasma reactor, the method comprising: supplying a source gas to the plasma reactor, the source gas comprising: (a) at least one reactive compound; ... | 10/09/2007 |
| 7270713 | Tunable gas distribution plate assembly A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a diffuser plate. The tuning plate has a plurality of orifice holes form... | 09/18/2007 |
| 7264688 | Plasma reactor apparatus with independent capacitive and toroidal plasma sources A plasma reactor includes a toroidal plasma source having an RF power applicator, and RF generator being coupled to the RF power applicator. The reactor further includes a capacitively coupled plasma source power applicator or electrode at the ceiling or the workpie... | 09/04/2007 |
| 7247218 | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power A plasma reactor process measurement instrument includes an input phase processor receiving wafer bias voltage, current and power and computing an input impedance, an input current and an input voltage to the transmission line; a transmission line processor for comp... | 07/24/2007 |
| 7241701 | Method and furnace for the vapor phase deposition of components onto semiconductor substrates with a variable main flow direction of the process gas A method and a furnace are provided for the vapor phase deposition of components onto semiconductor substrates. The main flow direction of the process gases can be varied or reversed by the furnace in the course of the method. This prevents temperature and concentra... | 07/10/2007 |
| 7220937 | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination A gas distribution ceiling electrode for use as a capacitive source power applicator and gas distribution showerhead in a plasma reactor includes a metal base and a process-compatible protective layer on the interior surface of he electrode having a dopant impurity ... | 05/22/2007 |
| 7217337 | Plasma process chamber and system The present invention relates to a plasma process chamber, which includes: an upper housing having a gas inlet connected to a gas source, and a gas shower head placed in the upper housing; and a lower housing having a gas outlet connected to a vacuum pump, and a sub... | 05/15/2007 |
| 7204913 | In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control A semiconductor processing chamber having a silicon containing pre-coat is provided. The chamber includes a top electrode in communication with a power supply and a processing chamber defined within a base, a sidewall extending from the base, and a top disposed on t... | 04/17/2007 |
| 7196283 | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top po... | 03/27/2007 |
| 7186943 | MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for su... | 03/06/2007 |
| 7144521 | High aspect ratio etch using modulation of RF powers of various frequencies A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first ... | 12/05/2006 |
| 7141757 | Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent A plasma reactor operable over a very wide process window of pressure, source power and bias power includes a resonant circuit consisting of an overhead electrode having a first impedance, a wafer support pedestal having a second impedance and a bulk plasma having a... | 11/28/2006 |
| 7139632 | Enhanced process and profile simulator algorithms A method for enhancing a process and profile simulator algorithm predicts the surface profile that a given plasma process will create. An energetic particle is first tracked. The ion fluxes produced by the energetic particle are then recorded. A local etch rate and ... | 11/21/2006 |
| 7135412 | Method to control a management system to control semiconductor manufacturing equipment In the control method in a management system of semiconductor manufacturing equipment to enhance a product yield through a control of etching process, information of a corresponding lot for the etching process is recognized. It is checked whether the information of ... | 11/14/2006 |
| 7132618 | MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression A plasma reactor for processing a semiconductor workpiece, includes reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supp... | 11/07/2006 |
| 7128804 | Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component having an anodized or non-anodized surface. The liquid crystalline polymer... | 10/31/2006 |
| 7122479 | Etching processing method An etching processing method capable of etching a low dielectric constant layer at a reduced cost by using an etching processing apparatus comprising a vacuum vessel, a sample loading electrode disposed in the vacuum vessel, a gas introduction device for introducing... | 10/17/2006 |
| 7112536 | Plasma processing system and method A plasma processing system and method wherein a power source produces a magnetic field and an electric field, and a window disposed between the power source and an interior of a plasma chamber couples the magnetic field into the plasma chamber thereby to couple powe... | 09/26/2006 |
| 7112533 | Plasma etching system and method A system and a process for plasma etching a semiconductor device. The technique comprises periodically applying a heightened voltage bias during the plasma etching process so as to reduce accumulated charge on the surface of the semiconductor device during plasma et... | 09/26/2006 |
| 7109123 | Silicon etching method A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6 gas, or fluorocarbon gas, O2 gas and fluorosilico... | 09/19/2006 |
| 7105447 | Etching method To provide an etching method capable of forming a cavity portion having a large space portion or a complicated structure by etching a sacrifice layer through a very fine etching opening at favorable accuracy in configuration. An etching process of a object is carrie... | 09/12/2006 |
| 7094706 | Device and method for etching a substrate by using an inductively coupled plasma A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles... | 08/22/2006 |
| 7094316 | Externally excited torroidal plasma source A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally ... | 08/22/2006 |
| 7084064 | Full sequence metal and barrier layer electrochemical mechanical processing A method and apparatus for electrochemically processing metal and barrier materials is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte betwee... | 08/01/2006 |
| 7078317 | Method and system for source switching and in-situ plasma bonding A system for in-situ plasma treatment. The system has a processing chamber, e.g., plasma chamber. The system has a first susceptor coupled within the chamber and a second susceptor facing the first susceptor and being within the chamber. The system has one or more p... | 07/18/2006 |
